ON Semiconductor NTMFS0D9N03CG User Manual

MOSFET - Power, Single

N-Channel, SO8-FL

30 V, 0.9 mW, 298 A

NTMFS0D9N03CG

Features

• Advanced Package (5x6mm) with Excellent Thermal Conduction

• Ultra Low R

to Improve System Efficiency

DS(on)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Hot Swap Application

• Power Load Switch

• Battery Management and Protection

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Note 2)

Power Dissipation
R

Continuous Drain
Current R
(Notes 1, 2)

Power Dissipation
R

Pulsed Drain
Current

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Operating Junction and Storage
Temperature

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in

2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

(Note 2)

q

JC

(Notes 1, 2)

q

JA

q

JC

q

JA

= 29.2 Apk)

L

= 25°C unless otherwise stated)

J

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, tp = 10 ms

TC =100°C 211

TC = 25°C P

TA = 25°C

TA = 100°C 34

TA = 25°C P

2

pad, 2 oz Cu pad.

T

I

E

TJ,

DSS

GS

I

D

D

I

D

D

DM

S

AS

STG

T

L

30 V

±20 V

298

144 W

48

3.8 W

900 A

120 A

556 mJ

−55 to
+175

260 °C

A

A

°C

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V

(BR)DSS

30 V

G (4)

R

MAX ID MAX

DS(ON)

0.9 mW @ 10 V

D (5−8)

S (1,2,3)

N−CHANNEL MOSFET

298 A

MARKING

DIAGRAMS

D

G

S
S
S

0D9NG
AYWZZ

D

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

1

A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

D

D

© Semiconductor Components Industries, LLC, 2019

April, 2021 − Rev. 4

1 Publication Order Number:

NTMFS0D9N03CG/D

NTMFS0D9N03CG

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case – Steady State

Junction−to−Ambient – Steady State (Note 3)

3. Surface−mounted on FR4 board using 1 in2 pad, 2 oz Cu pad.

R

q

JC

R

q

JA

1.0

39

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS

T

DSS

GSS

VGS = 0 V, ID = 250 mA

/

J

ID = 250 mA. ref to 25°C

VGS = 0 V,

V

= 30 V

DS

VDS = 0 V, VGS = 20 V 100 nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

Forward Transconductance g

Gate Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

FS

G

VGS = VDS, ID = 200 mA

ID = 200 mA. ref to 25°C

VGS = 10 V ID = 20 A 0.71 0.9

VDS = 3 V, ID = 20 A 70 S

TA = 25°C 1.5

CHARGES AND CAPACITANCES

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

VGS = 0 V, VDS = 15 V, f = 1 MHz

VGS = 10 V, VDS = 15 V; ID = 20 A

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 10 V, VDS = 15 V,

= 20 A, RG = 3.0 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Reverse Recovery Charge Q

V

SD

RR

RR

VGS = 0 V,

I

= 10 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

V

= 15 V, IS = 20 A

DS

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

30 V

13

TJ = 25°C 1.0

TJ = 125°C 100

1.3 2.2 V

−5 mV/°C

9450

4306

243

131.4

14.2

24.2

13.5

20

16

93

24

TJ = 25°C 0.75 1.2

TJ = 125°C 0.60

83 ns

114 nC

mV/°C

mA

mW

W

pF

nC

ns

V

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NTMFS0D9N03CG

TYPICAL CHARACTERISTICS

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

D

I

50

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

3.0

2.5

2.0

1.5

VGS = 10 V to 6 V

5.5 V

5.0 V

4.5 V

4.0 V

3.5 V

3.0 V

2.5 V

TJ = 25°C

= 20 A

I

D

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

D

I

50

3.02.52.01.51.00.50

0

3.0

2.5

2.0

1.5

VDS = 3 V

TJ = 125°C

3.02.01.0 4.5 5.0

1.5 3.5

TJ = 25°C

2.5 4.0

TJ = 25°C

TJ = −55°C

1.0

0.5

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

R

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

0

3

4

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

87652 210

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.8
VGS = 10 V

= 20 A

I

D

1.6

1.4

1.2

1.0

0.8

0.6

0.4

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

50

Figure 5. On−Resistance Variation with

Temperature

150

, DRAIN−TO−SOURCE RESISTANCE (mW)

109

DS(on)

R

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

, LEAKAGE (nA)

DSS

I

1.E−08

1.E−09

17512510075250−25−50

1.0

0.5

0

VGS = 10 V

160 2601106010

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

TJ = 175°C

TJ = 150°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

0

15

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

302520105

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