ON Semiconductor NTMFS0D9N03CG User Manual

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MOSFET - Power, Single

N-Channel, SO8-FL

30 V, 0.9 mW, 298 A

NTMFS0D9N03CG

Features

• Advanced Package (5x6mm) with Excellent Thermal Conduction

• Ultra Low R

to Improve System Efficiency

DS(on)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Hot Swap Application

• Power Load Switch

• Battery Management and Protection

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Note 2)

Power Dissipation R

Continuous Drain Current R (Notes 1, 2)

Power Dissipation R

Pulsed Drain Current

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (I

Operating Junction and Storage Temperature

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in

2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

(Note 2)

(Notes 1, 2)

= 29.2 Apk)

= 25°C unless otherwise stated)

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, tp = 10 ms

TC =100°C 211

TC = 25°C P

TA = 25°C

TA = 100°C 34

TA = 25°C P

pad, 2 oz Cu pad.

TJ,

DSS

STG

30 V

±20 V

298

144 W

3.8 W

900 A

120 A

556 mJ

−55 to +175

260 °C

°C

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(BR)DSS

30 V

G (4)

MAX ID MAX

DS(ON)

0.9 mW @ 10 V

D (5−8)

S (1,2,3)

N−CHANNEL MOSFET

298 A

MARKING

DIAGRAMS

S S S

0D9NG AYWZZ

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceabililty

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

April, 2021 − Rev. 4

1 Publication Order Number:

NTMFS0D9N03CG/D

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NTMFS0D9N03CG

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case – Steady State

Junction−to−Ambient – Steady State (Note 3)

3. Surface−mounted on FR4 board using 1 in2 pad, 2 oz Cu pad.

1.0

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

ID = 250 mA. ref to 25°C

VGS = 0 V,

= 30 V

VDS = 0 V, VGS = 20 V 100 nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

Forward Transconductance g

Gate Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 200 mA

ID = 200 mA. ref to 25°C

VGS = 10 V ID = 20 A 0.71 0.9

VDS = 3 V, ID = 20 A 70 S

TA = 25°C 1.5

CHARGES AND CAPACITANCES

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, VDS = 15 V, f = 1 MHz

VGS = 10 V, VDS = 15 V; ID = 20 A

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = 10 V, VDS = 15 V,

= 20 A, RG = 3.0 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Reverse Recovery Charge Q

VGS = 0 V,

= 10 A

VGS = 0 V, dIS/dt = 100 A/ms,

= 15 V, IS = 20 A

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

30 V

TJ = 25°C 1.0

TJ = 125°C 100

1.3 2.2 V

−5 mV/°C

9450

4306

243

131.4

14.2

24.2

13.5

TJ = 25°C 0.75 1.2

TJ = 125°C 0.60

83 ns

114 nC

mV/°C

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NTMFS0D9N03CG

TYPICAL CHARACTERISTICS

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

3.0

2.5

2.0

1.5

VGS = 10 V to 6 V

5.5 V

5.0 V

4.5 V

4.0 V

3.5 V

3.0 V

2.5 V

TJ = 25°C

= 20 A

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

3.02.52.01.51.00.50

3.0

2.5

2.0

1.5

VDS = 3 V

TJ = 125°C

3.02.01.0 4.5 5.0

1.5 3.5

TJ = 25°C

2.5 4.0

TJ = 25°C

TJ = −55°C

1.0

0.5

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

87652 210

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.8 VGS = 10 V

= 20 A

1.6

1.4

1.2

1.0

0.8

0.6

0.4

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

150

, DRAIN−TO−SOURCE RESISTANCE (mW)

109

DS(on)

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

, LEAKAGE (nA)

DSS

1.E−08

1.E−09

17512510075250−25−50

1.0

0.5

VGS = 10 V

160 2601106010

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

TJ = 175°C

TJ = 150°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

302520105

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NTMFS0D9N03CG

TYPICAL CHARACTERISTICS

10,000

1000

100

C, CAPACITANCE (pF)

1000

100

t, TIME (ns)

ISS

OSS

GSQGD

VGS = 0 V

= 25°C

f = 1 MHz

RSS

, GATE−TO−SOURCE VOLTAGE (V)

3025205100

VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VGS = 10 V

= 15 V

= 20 A

d(off)

d(on)

VGS = 0 V

VDS = 15 V

= 20 A

= 25°C

1201008040200

140

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

1000

100

TC = 25°C Single Pulse VGS ≤ 10 V

, DRAIN CURRENT (A)

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Safe Operating Area Figure 12. I

vs. Gate Resistance

Curve is based on 10% de−rating from typical failure points

Limit

DS(on)

Thermal Limit Package Limit

, SOURCE CURRENT (A)I

100101

TJ = 125°C

0.3

0.20.101

, SOURCE−TO−DRAIN VOLTAGE (V)

TJ = 25°C

TJ = −55°C

0.90.80.70.60.50.4

Figure 10. Diode Forward Voltage vs. Current

100

10 ms

100 ms

1 ms

10 ms 100 ms

(A)

PEAK

J(initial)

1010.1

100

0.00001 0.01

0.0001

TIME IN AVALANCHE (s)

vs. Time in Avalanche

PEAK

= 100°C

0.001

J(initial)

= 25°C

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Page 5

0.1

(°C/W)

0.01

NTMFS0D9N03CG

TYPICAL CHARACTERISTICS

50% Duty Cycle

20% 10% 5% 2%

Single Pulse

0.001

PULSE TIME (sec)

0.010.001 10.0001 0.10.000010.000001

Figure 13. Thermal Impedance

DEVICE ORDERING INFORMATION

Device Marking Package Shipping

NTMFS0D9N03CGT1G 0D9NG DFN5

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

1500 / Tape & Reel

†

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Page 6

DFN5 5x6, 1.27P

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 2:1

2 X

0.20 C

0.10 C

0.05

PIN 5

(EXPOSED PAD)

1234

TOP VIEW

SIDE VIEW

A0.10 B

BOTTOM VIEW

DETAIL A

e/2

0.475

2 X

(SO−8FL)

CASE 488AA

ISSUE N

0.20 C

4 X

DETAIL A

RECOMMENDED

SOLDERING FOOTPRINT*

4.5600.495

1.530

SEATING

PLANE

3.200

DATE 25 JUN 201

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

A1 0.00 −−−

D1 4.70 4.90 D2 3.80 4.00

E1 5.70 5.90 E2 3.45 3.65

L1 0.125 REF

MILLIMETERS

A 0.90 1.00 b 0.33 0.41

c 0.23 0.28 D 5.15

5.00 5.30

E 6.15

6.00 6.30

e 1.27 BSC G 0.51 0.575 K 1.20 1.35 L 0.51 0.575

M 3.00 3.40

q 0 −−−

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

3.80 12

GENERIC

MARKING DIAGRAM*

XXXXXX

AYWZZ

XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some product may not follow the Generic Marking.

4.530

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

0.905

0.965

1.000

0.750

DIMENSIONS: MILLIMETERS

1.330

1.270 PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON14036D DFN5 5x6, 1.27P (SO−8FL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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ON Semiconductor NTMFS0D9N03CG User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual