Page 1
MOSFET - Power, Single
N-Channel, SO8-FL
30 V, 0.74 mW, 337 A
NTMFS0D8N03C
Features
• Advanced Package (5x6mm) with Excellent Thermal Conduction
• Ultra Low R
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• ORing
• Motor Drive
• Power Load Switch
• DC−DC Converters
• Battery Management and Protection
to Improve System Efficiency
DS(on)
V
(BR)DSS
30 V
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R
MAX ID MAX
DS(ON)
0.74 mW @ 10 V
1.15 mW @ 4.5 V
D (5−8)
337 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Notes 1, 2)
Power Dissipation
R
Pulsed Drain Current
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Operating Junction and Storage Temperature
Range
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in
2. The entire application environment impacts the thermal resistance values shown,
q
JC
(Note 2)
q
JC
q
JA
(Notes 1, 2)
q
JA
= 51.9 Apk)
L
they are not constants and are only valid for the particular conditions noted.
= 25°C unless otherwise stated)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, tp = 10 ms
TC =100°C 238
TC = 25°C P
TA = 25°C
TA = 100°C 38
TA = 25°C P
TJ, T
2
pad, 2 oz Cu pad.
I
E
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
STG
30 V
±20 V
337
150 W
54
3.8 W
900 A
125 A
135 mJ
−55 to
+175
260 °C
A
A
°C
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAMS
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
S
S
S
G
0D8N
AYWZZ
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
D
D
© Semiconductor Components Industries, LLC, 2020
April, 2021 − Rev. 2
1 Publication Order Number:
NTMFS0D8N03C/D
Page 2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 1)
NTMFS0D8N03C
R
q
JC
R
q
JA
1.0
39
°C/W
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
ID = 250 mA. ref to 25°C
VGS = 0 V,
V
= 30 V
DS
TJ = 125°C 100
TJ = 25°C 1.0
VDS = 0 V, VGS = 20 V 100 nA
30 V
13
mV/°C
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Drain−to−Source On Resistance R
Forward Transconductance g
Gate Resistance R
GS(TH)
DS(on)
DS(on)
FS
G
VGS = VDS, ID = 200 mA
ID = 280 mA. ref to 25°C
VGS = 10 V, ID = 20 A 0.62 0.74
VGS = 4.5 V, ID = 20 A 0.92 1.15
VDS = 3 V, ID = 20 A 136 S
TA = 25°C 0.92
1.3 2.2 V
−5.4 mV/°C
mW
mW
W
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Drain Charge Q
Gate−to−Source Charge Q
Total Gate Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GD
GS
G(TOT)
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 20 A
VGS = 10 V, VDS = 15 V; ID = 20 A 110 nC
7690
4000
122
50
11
9
18
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
d(ON)
r
f
VGS = 10 V, VDS = 15 V,
= 20 A, RG = 3.0 W
I
D
20
10
81
15
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Reverse Recovery Charge Q
V
SD
RR
RR
VGS = 0 V,
I
= 10 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
VDS = 15 V, IS = 20 A
TJ = 25°C 0.72 1.2
TJ = 125°C 0.6
78 ns
104 nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
Page 3
NTMFS0D8N03C
TYPICAL CHARACTERISTICS
450
400
350
300
250
200
150
, DRAIN CURRENT (A)
100
D
I
50
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
, DRAIN−TO−SOURCE RESISTANCE (mW)
0.2
DS(on)
R
4
3
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
VGS = 10 V to 4 V
Voltage
TJ = 25°C
I
D
87652
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
= 20 A
450
400
350
300
250
200
150
, DRAIN CURRENT (A)
100
D
I
50
1.4
1.2
1.0
0.8
0.6
0.4
0.2
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
0
3.02.52.01.51.00.50
109
VDS = 3 V
TJ = 25°C
TJ = 125°C
0.5 2.5
TJ = 25°C
1.5 3.0
2.01.00 3.5 4.0
TJ = −55°C
VGS = 4.5 V
VGS = 10 V
300250200150100500 350 400
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
450
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
1M
VGS = 10 V
= 20 A
I
D
50
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
150
Figure 5. On−Resistance Variation with
100K
, LEAKAGE (nA)
DSS
I
17512510075250−25−50
10K
1K
100
10
1
Figure 6. Drain−to−Source Leakage Current
Temperature
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
15
vs. Voltage
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3
302520105
Page 4
NTMFS0D8N03C
TYPICAL CHARACTERISTICS
100K
10K
1K
100
C, CAPACITANCE (pF)
10
1K
VGS = 10 V
V
I
D
100
t
d(on)
t, TIME (ns)
10
10
9
C
ISS
8
7
C
OSS
6
5
Q
GD
Q
GS
VGS = 0 V
= 25°C
T
J
f = 1 MHz
15
4
C
RSS
3
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
V
3025205100
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
1
VGS = 0 V
TJ = 125°C
= 15 V
DS
= 20 A
t
d(off)
t
t
f
r
, SOURCE CURRENT (A)I
S
I
VDS = 15 V
= 20 A
I
D
T
= 25°C
J
9060300
120
1
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
1K
100
10
TC = 25°C
Single Pulse
VGS ≤ 10 V
, DRAIN CURRENT (A)
1
DS
I
0.1
0.1
VDS, DRAIN−TO−SOUORCE VOLTAGE (V)
Figure 11. Safe Operating Area Figure 12. I
vs. Gate Resistance
R
Limit
DS(on)
Thermal Limit
Package Limit
10
10 ms
100 ms
1 ms
10 ms
100 ms
1 s
100101
0.1
100
10
, DRAIN CURRENT (A)
PEAK
1
1001
0.00001 0.01
0.3
TJ = 25°C
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
TJ = −55°C
0.9
Figure 10. Diode Forward Voltage vs. Current
T
= 25°C
J(initial)
T
= 100°C
J(initial)
0.0001
0.001
0.1 1 10
TIME IN AVALANCHE (s)
vs. Time in Avalanche
PEAK
1.00.80.70.60.50.4
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4
Page 5
0.1
(°C/W)
JC
q
Z
0.01
10
1
NTMFS0D8N03C
TYPICAL CHARACTERISTICS
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
0.001
0.010.001 100.0001 0.10.000010.000001
PULSE TIME (sec)
1
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NTMFS0D8N03CT1G 0D8N DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1500 / Tape & Reel
†
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5
Page 6
DFN5 5x6, 1.27P
8
s
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 2:1
2 X
0.20 C
0.10 C
0.10 C
C
0.05
c
PIN 5
(EXPOSED PAD)
D
2
D1
1234
TOP VIEW
SIDE VIEW
8X
b
A0.10 B
L
14
E2
G
D2
BOTTOM VIEW
A
B
E1
E
2
A
DETAIL A
e/2
e
K
M
L1
0.475
2 X
SOLDERING FOOTPRINT*
2X
2X
(SO−8FL)
CASE 488AA
ISSUE N
0.20 C
c
DETAIL A
RECOMMENDED
4.5600.495
2X
1.530
4 X
q
A1
C
SEATING
PLANE
3.200
DATE 25 JUN 201
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15
5.00 5.30
D1 4.70 4.90
D2 3.80 4.00
E 6.15
6.00 6.30
E1 5.70 5.90
E2 3.45 3.65
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
L1 0.125 REF
M 3.00 3.40
q 0 −−−
_
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
3.80
12
_
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some product
may not follow the Generic Marking.
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
2X
0.905
0.965
1.000
4X
4X
0.750
1
DIMENSIONS: MILLIMETERS
1.330
1.270
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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