ON Semiconductor NTMFS0D8N03C User Manual

MOSFET - Power, Single

N-Channel, SO8-FL

30 V, 0.74 mW, 337 A

NTMFS0D8N03C

Features

• Advanced Package (5x6mm) with Excellent Thermal Conduction

• Ultra Low R

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• ORing

• Motor Drive

• Power Load Switch

• DC−DC Converters

• Battery Management and Protection

to Improve System Efficiency

DS(on)

V

(BR)DSS

30 V

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R

MAX ID MAX

DS(ON)

0.74 mW @ 10 V

1.15 mW @ 4.5 V

D (5−8)

337 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Note 2)

Power Dissipation
R

Continuous Drain
Current R
(Notes 1, 2)

Power Dissipation
R

Pulsed Drain Current

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Operating Junction and Storage Temperature
Range

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in

2. The entire application environment impacts the thermal resistance values shown,

q

JC

(Note 2)

q

JC

q

JA

(Notes 1, 2)

q

JA

= 51.9 Apk)

L

they are not constants and are only valid for the particular conditions noted.

= 25°C unless otherwise stated)

J

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, tp = 10 ms

TC =100°C 238

TC = 25°C P

TA = 25°C

TA = 100°C 38

TA = 25°C P

TJ, T

2

pad, 2 oz Cu pad.

I

E

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

STG

30 V

±20 V

337

150 W

54

3.8 W

900 A

125 A

135 mJ

−55 to
+175

260 °C

A

A

°C

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING

DIAGRAMS

D

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

1

A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty

S
S
S

G

0D8N

AYWZZ

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

D

D

© Semiconductor Components Industries, LLC, 2020

April, 2021 − Rev. 2

1 Publication Order Number:

NTMFS0D8N03C/D

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 1)

NTMFS0D8N03C

R

q

JC

R

q

JA

1.0

39

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

ID = 250 mA. ref to 25°C

VGS = 0 V,

V

= 30 V

DS

TJ = 125°C 100

TJ = 25°C 1.0

VDS = 0 V, VGS = 20 V 100 nA

30 V

13

mV/°C

mA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Threshold Temperature Coefficient V

V

GS(TH)/TJ

Drain−to−Source On Resistance R

Drain−to−Source On Resistance R

Forward Transconductance g

Gate Resistance R

GS(TH)

DS(on)

DS(on)

FS

G

VGS = VDS, ID = 200 mA

ID = 280 mA. ref to 25°C

VGS = 10 V, ID = 20 A 0.62 0.74

VGS = 4.5 V, ID = 20 A 0.92 1.15

VDS = 3 V, ID = 20 A 136 S

TA = 25°C 0.92

1.3 2.2 V

−5.4 mV/°C

mW

mW

W

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Drain Charge Q

Gate−to−Source Charge Q

Total Gate Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GD

GS

G(TOT)

VGS = 0 V, VDS = 15 V, f = 1 MHz

VGS = 4.5 V, VDS = 15 V; ID = 20 A

VGS = 10 V, VDS = 15 V; ID = 20 A 110 nC

7690

4000

122

50

11

9

18

pF

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

r

f

VGS = 10 V, VDS = 15 V,

= 20 A, RG = 3.0 W

I

D

20

10

81

15

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Reverse Recovery Charge Q

V

SD

RR

RR

VGS = 0 V,

I

= 10 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

VDS = 15 V, IS = 20 A

TJ = 25°C 0.72 1.2

TJ = 125°C 0.6

78 ns

104 nC

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

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2

NTMFS0D8N03C

TYPICAL CHARACTERISTICS

450

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

D

I

50

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

, DRAIN−TO−SOURCE RESISTANCE (mW)

0.2

DS(on)

R

4

3

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

VGS = 10 V to 4 V

Voltage

TJ = 25°C
I

D

87652

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

2.6 V

2.4 V

= 20 A

450

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

D

I

50

1.4

1.2

1.0

0.8

0.6

0.4

0.2

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

R

0

3.02.52.01.51.00.50

109

VDS = 3 V

TJ = 25°C

TJ = 125°C

0.5 2.5

TJ = 25°C

1.5 3.0

2.01.00 3.5 4.0

TJ = −55°C

VGS = 4.5 V

VGS = 10 V

300250200150100500 350 400

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

450

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

1.9

1.7

1.5

1.3

1.1

0.9

0.7

0.5

1M

VGS = 10 V

= 20 A

I

D

50

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

150

Figure 5. On−Resistance Variation with

100K

, LEAKAGE (nA)

DSS

I

17512510075250−25−50

10K

1K

100

10

1

Figure 6. Drain−to−Source Leakage Current

Temperature

TJ = 175°C

TJ = 150°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

15

vs. Voltage

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302520105