Page 1
MOSFET - Power, Single
N-Channel, SO8-FL
25 V, 0.68 mW, 365 A
NTMFS0D8N02P1E
Features
• Small Footprint (5x6mm) for Compact Design
• Low R
• Low Q
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
V
(BR)DSS
25 V
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R
MAX ID MAX
DS(ON)
0.68 mW @ 10 V
0.80 mW @ 4.5 V
D (5−8)
365 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
Continuous Drain
Current R
(Notes 2, 3)
Power Dissipation
R
Pulsed Drain Current
Single Pulse Drain−to−Source Avalanche
Energy (I
Operating Junction and Storage Temperature
Range
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in
2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.
3. The entire application environment impacts the thermal resistance values
4. 100% UIS tested at L = 1 mH, I
q
JC
(Note 1)
q
JC
q
JA
(Notes 1, 3)
q
JA
q
JA
(Notes 2, 3)
q
JA
= 115.4 Apk, L = 0.1 mH) (Note 4)
L
shown, they are not constants and are only valid for the particular conditions
noted. Actual continuous current will be limited by thermal & electro−mechanical
application board design. R
= 25°C unless otherwise stated)
J
Symbol Value Unit
DSS
GS
TC = 25°C
Steady
State
Steady
State
Steady
State
TA = 25°C, tp = 10 ms
TC =85°C 263
TC = 25°C P
TA = 25°C
TA = 85°C 40
TA = 25°C P
TA = 25°C
TA = 85°C 21
TA = 25°C P
is determined by the user’s board design.
q
JC
= 30.7 A.
AS
I
D
D
I
D
D
I
D
D
I
DM
E
AS
TJ, T
STG
T
L
2
pad size, 2 oz Cu pad.
25 V
+16/
−12
365
139 W
55
3.2 W
30
0.93 W
762 A
666 mJ
−55 to
+150
260 °C
V
A
A
A
°C
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAMS
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
1
2EFN = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
S
S
S
G
2EFN
AYWZZ
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
D
D
© Semiconductor Components Industries, LLC, 2019
April, 2021 − Rev. 1
1 Publication Order Number:
NTMFS0D8N02P1E/D
Page 2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
NTMFS0D8N02P1E
R
q
JC
R
q
JA
R
q
JA
0.9
39
°C/W
135 °C/W
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
V
(BR)DSS
V
(BR)DSS
DSS
GSS
T
J
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
Forward Transconductance g
Gate Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
FS
G
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
G(TOT)
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
t
d(ON)
r
d(OFF)
f
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
t
d(ON)
r
d(OFF)
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
VGS = 0 V, ID = 1 mA 25 V
/
ID = 1 mA. ref to 25°C 16
VGS = 0 V,
V
= 20 V
DS
TJ = 25°C 1
TJ = 125°C 250
VDS = 0 V, VGS = +16 V/−12 V ±100 nA
VGS = VDS, ID = 2 mA 1.2 2.0 V
ID = 2 mA. ref to 25°C −4.4 mV/°C
VGS = 10 V, ID = 46 A 0.44 0.68
VGS = 4.5 V, ID = 43 A 0.54 0.80
VDS = 5 V, ID = 46 A 307 S
TA = 25°C 0.48
8600
VGS = 0 V, VDS = 13 V, f = 1 MHz
2285
129
52
10
VGS = 4.5 V, VDS = 13 V; ID = 46 A
21
9
VGS = 10 V, VDS = 13 V; ID = 46 A 116 nC
45
VGS = 4.5 V, VDS = 13 V,
= 46 A, RG = 6.0 W
I
D
24
68
20
23
VGS = 10 V, VDS = 13 V,
= 46 A, RG = 6.0 W
I
D
6.8
123
19
VGS = 0 V,
I
= 46 A
S
TJ = 25°C 0.77 1.2
TJ = 125°C 0.62
mV/°C
mA
mW
W
pF
nC
ns
ns
V
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2
Page 3
NTMFS0D8N02P1E
ELECTRICAL CHARACTERISTICS (T
Parameter UnitMaxTypMinTest ConditionSymbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Reverse Recovery Charge Q
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
= 25°C unless otherwise specified)
J
t
RR
RR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 46 A
64 ns
87 nC
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3
Page 4
NTMFS0D8N02P1E
TYPICAL CHARACTERISTICS
300
250
200
150
100
, DRAIN CURRENT (A)
D
I
50
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
5
4
3
2
1
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
0
4
3
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
VGS = 10 V to 3.2 V
6
Voltage
2.8 V
2.6 V
TJ = 25°C
= 46 A
I
D
975
300
250
200
150
100
, DRAIN CURRENT (A)
D
I
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
, DRAIN−TO−SOURCE RESISTANCE (mW)
0.2
DS(on)
R
0
3210
108
TJ = 25°C
TJ = 125°C
1
TJ = 25°C
100 220 2602
60 140
TJ = −55°C
320
VGS = 4.5 V
VGS = 10 V
180
4
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
5
30020
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
100K
VGS = 10 V
= 46 A
I
D
, LEAKAGE (nA)
DSS
I
50
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
150
17512510075250−25−50
Figure 5. On−Resistance Variation with
Temperature
TJ = 150°C
10K
TJ = 125°C
1K
TJ = 85°C
100
10
TJ = 25°C
1
0.1
71925
11
17151395
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
2321
Page 5
NTMFS0D8N02P1E
TYPICAL CHARACTERISTICS
100K
10K
1K
100
10
C, CAPACITANCE (pF)
1
1000
100
t
d(off)
t
d(on)
t, TIME (ns)
10
1
Figure 9. Resistive Switching Time Variation
10
9
C
C
ISS
OSS
8
7
6
5
C
RSS
4
Q
GS
GD
Q
3
VGS = 0 V
= 25°C
T
J
f = 1 MHz
10
201550
25 20
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
V
40
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
VGS = 0 V
10
t
r
t
f
VGS = 4.5 V
= 13 V
V
DS
I
= 46 A
D
100101
RG, GATE RESISTANCE (W)
TJ = 125°C
1
, SOURCE CURRENT (A)
S
I
0.1
TJ = 25°C
0.3
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
VDS = 13 V
= 46 A
I
D
T
= 25°C
J
80
TJ = −55°C
100600
120
0.90.80.70.60.50.4
1.0
1000
100
10
TC = 25°C
Single Pulse
VGS ≤ 10 V
, DRAIN CURRENT (A)
1
D
I
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area Figure 12. Maximum Drain Current vs. Time in
Limit
R
DS(on)
Thermal Limit
Package Limit
100
25°C
500 ms
1 ms
10 ms
100 ms
1 s
10
125°C
, DRAIN CURRENT (A)
PEAK
I
100°C
1
101
1000.1
0.00001
0.001 0.01 10
0.1 10.0001
Avalanche
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5
Page 6
0.1
(°C/W)
JC
q
Z
0.01
1
NTMFS0D8N02P1E
TYPICAL CHARACTERISTICS
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
0.001
PULSE TIME (sec)
0.010.0010.0001 0.10.00001
1
Figure 13. Thermal Impedance
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NTMFS0D8N02P1ET1G 2EFN DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1500 / Tape & Reel
†
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6
Page 7
DFN5 5x6, 1.27P
8
s
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 2:1
2 X
0.20 C
0.10 C
0.10 C
C
0.05
c
PIN 5
(EXPOSED PAD)
D
2
D1
1234
TOP VIEW
SIDE VIEW
8X
b
A0.10 B
L
14
E2
G
D2
BOTTOM VIEW
A
B
E1
E
2
A
DETAIL A
e/2
e
K
M
L1
0.475
2 X
SOLDERING FOOTPRINT*
2X
2X
(SO−8FL)
CASE 488AA
ISSUE N
0.20 C
c
DETAIL A
RECOMMENDED
4.5600.495
2X
1.530
4 X
q
3.200
A1
C
SEATING
PLANE
DATE 25 JUN 201
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15
5.00 5.30
D1 4.70 4.90
D2 3.80 4.00
E 6.15
6.00 6.30
E1 5.70 5.90
E2 3.45 3.65
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
L1 0.125 REF
M 3.00 3.40
q 0 −−−
_
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
3.80
12
_
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some product
may not follow the Generic Marking.
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
2X
0.905
0.965
1.000
4X
4X
0.750
1
DIMENSIONS: MILLIMETERS
1.330
1.270
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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