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MOSFET - Power, Single
N-Channel, SO8-FL
30 V, 0.62 mW, 433 A
NTMFS0D6N03C
Features
• Advanced Package (5x6mm) with Excellent Thermal Conduction
• Ultra Low R
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• ORing
• Motor Drive
• Power Load Switch
• Battery Management and Protection
to Improve System Efficiency
DS(on)
V
(BR)DSS
30 V
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R
MAX ID MAX
DS(ON)
0.62 mW @ 10 V
0.9 mW @ 4.5 V
D (5−8)
433 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Notes 1, 2)
Power Dissipation
R
Pulsed Drain Current
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Operating Junction and Storage Temperature
Range
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in
2. The entire application environment impacts the thermal resistance values shown,
q
JC
(Note 2)
q
JC
q
JA
(Notes 1, 2)
q
JA
= 45.4 Apk)
L
they are not constants and are only valid for the particular conditions noted.
= 25°C unless otherwise stated)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, tp = 10 ms
TC =100°C 306
TC = 25°C P
TA = 25°C
TA = 100°C 42
TA = 25°C P
TJ, T
2
pad, 2 oz Cu pad.
I
E
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
STG
30 V
±20 V
433
200 W
60
3.9 W
900 A
156 A
1032 mJ
−55 to
+175
260 °C
A
A
°C
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAMS
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
S
S
S
G
0D6N
AYWZZ
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
D
D
© Semiconductor Components Industries, LLC, 2020
April, 2021 − Rev. 2
1 Publication Order Number:
NTMFS0D6N03C/D
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THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
NTMFS0D6N03C
R
q
JC
R
q
JA
R
q
JA
0.8
38
°C/W
134 °C/W
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
ID = 250 mA. ref to 25°C
VGS = 0 V,
V
= 30 V
DS
TJ = 125°C 100
TJ = 25°C 1.0
VDS = 0 V, VGS = 20 V 100 nA
30 V
12
mV/°C
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Drain−to−Source On Resistance R
Forward Transconductance g
Gate Resistance R
GS(TH)
DS(on)
DS(on)
FS
G
VGS = VDS, ID = 280 mA
ID = 280 mA. ref to 25°C
VGS = 10 V, ID = 30 A 0.52 0.62
VGS = 4.5 V, ID = 30 A 0.72 0.9
VDS = 3 V, ID = 30 A 150 S
TA = 25°C 0.4
1.3 2.2 V
−5.7 mV/°C
mW
mW
W
CHARGES AND CAPACITANCES
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Drain Charge Q
Gate−to−Source Charge Q
Total Gate Charge Q
ISS
OSS
RSS
G(TOT)
G(TH)
GD
GS
G(TOT)
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V; ID = 30 A 145 nC
10500
5740
161
65
16
12
27
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
d(ON)
r
f
VGS = 10 V, VDS = 15 V,
= 30 A, RG = 3.0 W
I
D
24
12
89
19
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Reverse Recovery Charge Q
V
SD
RR
RR
VGS = 0 V,
I
= 30 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
V
= 15 V, IS = 30 A
DS
TJ = 25°C 0.75 1.2
TJ = 125°C 0.60
97 ns
135 nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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NTMFS0D6N03C
TYPICAL CHARACTERISTICS
450
400
350
300
250
200
150
, DRAIN CURRENT (A)
100
D
I
50
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
0
4
3
Figure 3. On−Resistance vs. Gate−to−Source
1.9
VGS = 10 V
= 30 A
I
D
1.7
1.5
1.3
1.1
0.9
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.7
DS(on)
R
0.5
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
450
3.4 V
TJ = 25°C
I
D
87652
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
= 30 A
, DRAIN CURRENT (A)
D
I
3.02.52.01.51.00.50
, DRAIN−TO−SOURCE RESISTANCE (mW)
109
R
VGS = 10 V to 3.6 V
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
Voltage
1000000
100000
10000
, LEAKAGE (nA)
DSS
I
150
50
17512510075250−25−50
VDS = 3 V
400
350
300
250
200
150
100
50
0
0.5 2.5
1.0
TJ = 25°C
0.8
0.6
0.4
0.2
0
DS(on)
TJ = 25°C
TJ = 125°C
1.5 3.0
2.01.00 3.5 4.0
VGS = 4.5 V
VGS = 10 V
TJ = −55°C
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
TJ = 175°C
TJ = 150°C
TJ = 125°C
1000
100
10
1
TJ = 85°C
TJ = 25°C
15
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
300250200150100500 350 400
302520105
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