ON Semiconductor NTMFS0D6N03C User Manual

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Page 1

MOSFET - Power, Single

N-Channel, SO8-FL

30 V, 0.62 mW, 433 A

NTMFS0D6N03C

Features

• Advanced Package (5x6mm) with Excellent Thermal Conduction

• Ultra Low R

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• ORing

• Motor Drive

• Power Load Switch

• Battery Management and Protection

to Improve System Efficiency

DS(on)

(BR)DSS

30 V

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MAX ID MAX

DS(ON)

0.62 mW @ 10 V

0.9 mW @ 4.5 V

D (5−8)

433 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Note 2)

Power Dissipation R

Continuous Drain Current R (Notes 1, 2)

Power Dissipation R

Pulsed Drain Current

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (I

Operating Junction and Storage Temperature Range

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in

2. The entire application environment impacts the thermal resistance values shown,

(Note 2)

(Notes 1, 2)

= 45.4 Apk)

they are not constants and are only valid for the particular conditions noted.

= 25°C unless otherwise stated)

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, tp = 10 ms

TC =100°C 306

TC = 25°C P

TA = 25°C

TA = 100°C 42

TA = 25°C P

TJ, T

pad, 2 oz Cu pad.

DSS

STG

30 V

±20 V

433

200 W

3.9 W

900 A

156 A

1032 mJ

−55 to +175

260 °C

°C

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING

DIAGRAMS

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceabililty

S S S

0D6N

AYWZZ

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

April, 2021 − Rev. 2

1 Publication Order Number:

NTMFS0D6N03C/D

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 2)

NTMFS0D6N03C

0.8

°C/W

134 °C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

ID = 250 mA. ref to 25°C

VGS = 0 V,

= 30 V

TJ = 125°C 100

TJ = 25°C 1.0

VDS = 0 V, VGS = 20 V 100 nA

30 V

mV/°C

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Threshold Temperature Coefficient V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

Gate Resistance R

GS(TH)

DS(on)

VGS = VDS, ID = 280 mA

ID = 280 mA. ref to 25°C

VGS = 10 V, ID = 30 A 0.52 0.62

VGS = 4.5 V, ID = 30 A 0.72 0.9

VDS = 3 V, ID = 30 A 150 S

TA = 25°C 0.4

1.3 2.2 V

−5.7 mV/°C

CHARGES AND CAPACITANCES

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Drain Charge Q

Gate−to−Source Charge Q

Total Gate Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

G(TOT)

VGS = 0 V, VDS = 15 V, f = 1 MHz

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 10 V, VDS = 15 V; ID = 30 A 145 nC

10500

5740

161

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

VGS = 10 V, VDS = 15 V,

= 30 A, RG = 3.0 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Reverse Recovery Charge Q

VGS = 0 V,

= 30 A

VGS = 0 V, dIS/dt = 100 A/ms,

= 15 V, IS = 30 A

TJ = 25°C 0.75 1.2

TJ = 125°C 0.60

97 ns

135 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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NTMFS0D6N03C

TYPICAL CHARACTERISTICS

450

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

Figure 3. On−Resistance vs. Gate−to−Source

1.9 VGS = 10 V

= 30 A

1.7

1.5

1.3

1.1

0.9

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

0.7

DS(on)

0.5

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

450

3.4 V

TJ = 25°C I

87652

3.2 V

3.0 V

2.8 V

2.6 V

2.4 V

= 30 A

, DRAIN CURRENT (A)

3.02.52.01.51.00.50

, DRAIN−TO−SOURCE RESISTANCE (mW)

109

VGS = 10 V to 3.6 V

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

Voltage

1000000

100000

10000

, LEAKAGE (nA)

DSS

150

17512510075250−25−50

VDS = 3 V

400

350

300

250

200

150

100

0.5 2.5

1.0

TJ = 25°C

0.8

0.6

0.4

0.2

DS(on)

TJ = 25°C

TJ = 125°C

1.5 3.0

2.01.00 3.5 4.0

VGS = 4.5 V

VGS = 10 V

TJ = −55°C

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

TJ = 175°C

TJ = 150°C

TJ = 125°C

1000

100

TJ = 85°C

TJ = 25°C

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

300250200150100500 350 400

302520105

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Page 4

NTMFS0D6N03C

TYPICAL CHARACTERISTICS

00,000

10,000

1000

100

C, CAPACITANCE (pF)

1000

100

t, TIME (ns)

ISS

OSS

GSQGD

VGS = 0 V

= 25°C

f = 1 MHz

RSS

, GATE−TO−SOURCE VOLTAGE (V)

3025205100

VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VGS = 10 V

= 15 V

= 30 A

d(on)

d(off)

100

VGS = 0 V

VDS = 15 V

= 30 A

= 25°C

9060300

120 150

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

1000

100

TC = 25°C Single Pulse VGS ≤ 10 V

, DRAIN CURRENT (A)

0.1

VDS, DRAIN−TO−SOUORCE VOLTAGE (V)

Figure 11. Safe Operating Area Figure 12. I

vs. Gate Resistance

Limit

DS(on)

Thermal Limit Package Limit

10 ms

100 ms

1 ms 10 ms

100 ms 1 s

, SOURCE CURRENT (A)I

0.1

100101

0.3

100

, DRAIN CURRENT (A)

PEAK

10010.1

0.00001 0.01

TJ = 125°C

, SOURCE−TO−DRAIN VOLTAGE (V)

TJ = 25°C

TJ = −55°C

Figure 10. Diode Forward Voltage vs. Current

= 25°C

J(initial)

= 100°C

0.0001

0.001

TIME IN AVALANCHE (s)

J(initial)

0.1 1 1

vs. Time in Avalanche

PEAK

0.90.80.70.60.50.4

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Page 5

0.1

(°C/W)

0.01

NTMFS0D6N03C

TYPICAL CHARACTERISTICS

50% Duty Cycle

20%

10%

Single Pulse

0.001

PULSE TIME (sec)

0.010.001 10.0001 0.10.000010.000001

Figure 13. Thermal Characteristics

DEVICE ORDERING INFORMATION

Device Marking Package Shipping

NTMFS0D6N03CT1G 0D6N DFN5

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

1500 / Tape & Reel

†

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Page 6

DFN5 5x6, 1.27P

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 2:1

2 X

0.20 C

0.10 C

0.05

PIN 5

(EXPOSED PAD)

1234

TOP VIEW

SIDE VIEW

A0.10 B

BOTTOM VIEW

DETAIL A

e/2

0.475

2 X

SOLDERING FOOTPRINT*

(SO−8FL)

CASE 488AA

ISSUE N

0.20 C

DETAIL A

RECOMMENDED

4.5600.495

1.530

4 X

SEATING

3.200

PLANE

DATE 25 JUN 201

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

A1 0.00 −−−

D1 4.70 4.90 D2 3.80 4.00

E1 5.70 5.90 E2 3.45 3.65

MILLIMETERS

A 0.90 1.00 b 0.33 0.41

c 0.23 0.28

D 5.15

5.00 5.30

E 6.15

6.00 6.30

e 1.27 BSC G 0.51 0.575 K 1.20 1.35 L 0.51 0.575

L1 0.125 REF

M 3.00 3.40

q 0 −−−

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

3.80 12

GENERIC

MARKING DIAGRAM*

XXXXXX

AYWZZ

XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some product may not follow the Generic Marking.

4.530

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

0.905

0.965

1.000

0.750

DIMENSIONS: MILLIMETERS

1.330

1.270 PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON14036D DFN5 5x6, 1.27P (SO−8FL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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