MOSFET - Power, Single
N-Channel, SO8-FL
30 V, 0.52 mW, 464 A
NTMFS0D5N03C
Features
• Advanced Package (5x6mm) with Excellent Thermal Conduction
• Ultra Low R
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• ORing
• Motor Drive
• Power Load Switch
• DC−DC Converters
• Battery Management and Protection
to Improve System Efficiency
DS(on)
V
(BR)DSS
30 V
www.onsemi.com
R
MAX ID MAX
DS(ON)
0.52 mW @ 10 V
0.78 mW @ 4.5 V
D (5−8)
464 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Notes 1, 2)
Power Dissipation
R
Pulsed Drain Current
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Operating Junction and Storage Temperature
Range
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in
2. The entire application environment impacts the thermal resistance values shown,
q
JC
(Note 2)
q
JC
q
JA
(Notes 1, 2)
q
JA
= 96 Apk)
L
they are not constants and are only valid for the particular conditions noted.
= 25°C unless otherwise stated)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, tp = 10 ms
TC =100°C 328
TC = 25°C P
TA = 25°C
TA = 100°C 46
TA = 25°C P
TJ, T
2
pad, 2 oz Cu pad.
I
E
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
STG
30 V
±20 V
464
200 W
65
3.9 W
900 A
166 A
467 mJ
−55 to
+175
260 °C
A
A
°C
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAMS
D
DFN5 (SO−8FL)
CASE 506EZ
1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
S
S
S
G
0D5N
AYWZZ
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
D
D
© Semiconductor Components Industries, LLC, 2020
April, 2021 − Rev. 3
1 Publication Order Number:
NTMFS0D5N03C/D
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 1)
NTMFS0D5N03C
R
q
JC
R
q
JA
0.8
38
°C/W
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
ID = 250 mA. ref to 25°C
VGS = 0 V,
V
= 30 V
DS
TJ = 125°C 100
TJ = 25°C 1.0
VDS = 0 V, VGS = 20 V 100 nA
30 V
11
mV/°C
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Drain−to−Source On Resistance R
Forward Transconductance g
Gate Resistance R
GS(TH)
DS(on)
DS(on)
FS
G
VGS = VDS, ID = 330 mA
ID = 330 mA. ref to 25°C
VGS = 10 V, ID = 30 A 0.43 0.52
VGS = 4.5 V, ID = 30 A 0.62 0.78
VDS = 3 V, ID = 30 A 208 S
TA = 25°C 0.4
1.3 2.2 V
−5.9 mV/°C
mW
mW
W
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Drain Charge Q
Gate−to−Source Charge Q
Total Gate Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GD
GS
G(TOT)
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V; ID = 30 A 178 nC
13000
6540
146
80
20
13
33
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
d(ON)
r
f
VGS = 10 V, VDS = 15 V,
= 30 A, RG = 3.0 W
I
D
29
13
108
20
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Reverse Recovery Charge Q
V
SD
RR
RR
VGS = 0 V,
I
= 30 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
VDS = 15 V, IS = 30 A
TJ = 25°C 0.75 1.2
TJ = 125°C 0.58
103 ns
160 nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTMFS0D5N03C
TYPICAL CHARACTERISTICS
500
450
400
350
300
250
200
150
, DRAIN CURRENT (A)
D
I
100
50
0
3.4 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
, DRAIN−TO−SOURCE RESISTANCE (mW)
0.2
DS(on)
R
4
3
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
VGS = 10 V to 3.6 V
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
TJ = 25°C
= 30 A
I
D
87652
500
450
400
350
300
250
200
150
, DRAIN CURRENT (A)
D
I
100
50
1.0
0.8
0.6
0.4
0.2
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
0
3.02.52.01.51.00.50
109
VDS = 3 V
TJ = 25°C
TJ = 125°C
0.5 2.5
TJ = 25°C
1.5 3.0
2.01.00 3.5 4.0
TJ = −55°C
VGS = 4.5 V
VGS = 10 V
300250200150100500 350 400
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
1M
VGS = 10 V
= 30 A
I
D
50
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
150
Figure 5. On−Resistance Variation with
100K
, LEAKAGE (nA)
DSS
I
17512510075250−25−50
10K
1K
100
10
1
Figure 6. Drain−to−Source Leakage Current
Temperature
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
15
vs. Voltage
www.onsemi.com
3
302520105
NTMFS0D5N03C
TYPICAL CHARACTERISTICS
100K
10K
1K
100
C, CAPACITANCE (pF)
10
10K
VGS = 10 V
V
I
D
1K
100
t, TIME (ns)
10
10
9
C
ISS
8
7
C
OSS
6
5
Q
GS
GD
4
Q
3
VGS = 0 V
= 25°C
T
J
f = 1 MHz
15
C
RSS
3025205100
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
V
9060300
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
1
VGS = 0 V
TJ = 125°C
= 15 V
DS
= 30 A
t
d(off)
t
d(on)
t
f
t
r
, SOURCE CURRENT (A)I
S
I
VDS = 15 V
= 30 A
I
D
T
= 25°C
J
120 150
180
1
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
1K
100
10
TC = 25°C
Single Pulse
VGS ≤ 10 V
, DRAIN CURRENT (A)
1
DS
I
0.1
0.1
VDS, DRAIN−TO−SOUORCE VOLTAGE (V)
Figure 11. Safe Operating Area Figure 12. I
vs. Gate Resistance
R
Limit
DS(on)
Thermal Limit
Package Limit
10
10 ms
100 ms
1 ms
10 ms
100 ms
1 s
100101
0.1
100
10
, DRAIN CURRENT (A)
PEAK
1
1001
0.00001 0.01
0.3
TJ = 25°C
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
TJ = −55°C
0.80.70.60.50.4
Figure 10. Diode Forward Voltage vs. Current
T
= 25°C
J(initial)
T
= 100°C
J(initial)
0.0001
0.001
TIME IN AVALANCHE (s)
vs. Time in Avalanche
PEAK
0.1 1 10
0.9
www.onsemi.com
4
0.1
(°C/W)
JC
q
Z
0.01
1
NTMFS0D5N03C
TYPICAL CHARACTERISTICS
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
0.001
PULSE TIME (sec)
0.010.0010.0001 0.10.000010.000001
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NTMFS0D5N03CT1G 0D5N DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1500 / Tape & Reel
†
1
www.onsemi.com
5
NTMFS0D5N03C
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE O
q
q
www.onsemi.com
6
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
www.onsemi.com
1
Loading...