ON Semiconductor NTMFS020N06C User Manual
MOSFET- Power, Single
N-Channel, SO8FL
60 V, 19.6 mW, 28 A
NTMFS020N06C
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
V
(BR)DSS
60 V
www.onsemi.com
R
MAX ID MAX
DS(ON)
19.6 mW @ 10 V
D (5−8)
28 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
(Note 1)
q
JC
(Notes 1, 2)
q
JA
q
JC
q
JA
= 5.6 Apk)
L
= 25°C unless otherwise stated)
J
Symbol Value Unit
Steady
State
Steady
State
Steady
State
Steady
State
TA = 25°C, tp = 10 ms
TC = 25°C
TC = 100°C 19
TC = 25°C
TC = 100°C 15
TA = 25°C
TA = 100°C 6
TA = 25°C
TA = 100°C 1.7
TJ, T
DSS
GS
I
D
P
D
I
D
P
D
I
DM
−55 to
STG
+175
S
E
AS
T
L
2
, 2 oz. Cu pad.
60 V
±20 V
28
31
3.4
181 A
25 A
15 mJ
260 °C
W
9
W
°C
A
A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
S
S
S
G
20N06C
AYWZZ
D
ORDERING INFORMATION
Device Package Shipping
NTMFS020N06CT1G SO−8 FL
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1500 /
Tape & Reel
D
D
†
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction−to−Case – Steady State (Note 2)
Junction−to−Ambient – Steady State (Note 2)
© Semiconductor Components Industries, LLC, 2020
January, 2020 − Rev. 0
°C/W
R
q
JC
R
q
JA
4.8
43.2
1 Publication Order Number:
NTMFS020N06C/D
NTMFS020N06C
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
V
(BR)DSS/TJ
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
DSS
GSS
VGS = 0 V, ID = 250 mA
ID = 250 mA, ref to 25°C
VGS = 0 V,
V
= 60 V
DS
TJ = 25°C 10
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
60 V
29
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
Gate Resistance R
GS(TH)
DS(on)
FS
G
VGS = VDS, ID = 20 mA
ID = 20 mA, ref to 25°C
VGS = 10 V, ID = 4 A 16.3 19.6
VDS = 5 V, ID = 4 A 12 S
TA = 25°C 1.0
2.0 4.0 V
−7.8 mV/°C
mW
W
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
VGS = 0 V, f = 1 MHz, VDS = 30 V
VGS = 10 V, VDS = 30 V, ID = 4 A
355
260
4.9
5.8
1.4
2.3
0.53
pF
nC
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
d(ON)
r
f
VGS = 10 V, VDS = 30 V,
= 4 A, RG = 6 W
I
D
6.5
1.4
9.7
4.0
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 4 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
V
= 30 V, IS = 4 A
DS
TJ = 25°C 0.81 1.2
TJ = 125°C 0.67
24
12
12
12 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTMFS020N06C
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
22
21
20
19
18
17
16
, DRAIN−TO−SOURCE RESISTANCE (mW)
15
6.5
DS(on)
R
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
VGS = 10 V to 7 V
6.0 V
5.0 V
4.5 V
3.6 V
3.02.52.01.51.00.50
TJ = 25°C
= 4 A
I
D
8.07.5 8
9.58.57.0
109.0
35
30
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
20
TJ = 25°C
19
18
17
16
15
, DRAIN−TO−SOURCE RESISTANCE (mW)
14
DS(on)
R
Figure 4. On−Resistance vs. Drain Current and
Voltage
TJ = −55°C
TJ = 125°C
1.5 3.5
1.00.55.04.54.03.5
2.5 4.0
16
Gate Voltage
TJ = 25°C
3.02.00 4.5 5.0
VGS = 10 V
20 24 28
32124
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
2.5
2.0
1.5
1.0
0.5
VGS = 10 V
= 4 A
I
D
0
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
50
Figure 5. On−Resistance Variation with
Temperature
100K
10K
1K
100
, LEAKAGE (nA)
10
DSS
I
1
150
17512510075250−25−50
0.1
www.onsemi.com
3
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
25
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
554535155
Loading...