ON Semiconductor NTMFS020N06C User Manual

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Page 1

MOSFET- Power, Single

N-Channel, SO8FL

60 V, 19.6 mW, 28 A

NTMFS020N06C

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Power Tools, Battery Operated Vacuums

• UAV/Drones, Material Handling

• BMS/Storage, Home Automation

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

(BR)DSS

60 V

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MAX ID MAX

DS(ON)

19.6 mW @ 10 V

D (5−8)

28 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Notes 1, 3)

Power Dissipation R

Continuous Drain Current R (Notes 1, 2, 3)

Power Dissipation R

Pulsed Drain Current

Operating Junction and Storage Temperature Range

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (I

Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

(Note 1)

(Notes 1, 2)

= 5.6 Apk)

= 25°C unless otherwise stated)

Symbol Value Unit

Steady

State

Steady

State

Steady

State

Steady

State

TA = 25°C, tp = 10 ms

TC = 25°C

TC = 100°C 19

TC = 25°C

TC = 100°C 15

TA = 25°C

TA = 100°C 6

TA = 25°C

TA = 100°C 1.7

TJ, T

DSS

−55 to

STG

+175

, 2 oz. Cu pad.

60 V

±20 V

3.4

181 A

25 A

15 mJ

260 °C

°C

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING DIAGRAM

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceabililty

S S S

20N06C

AYWZZ

ORDERING INFORMATION

Device Package Shipping

NTMFS020N06CT1G SO−8 FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1500 /

Tape & Reel

†

THERMAL RESISTANCE RATINGS

Parameter Symbol Value Unit

Junction−to−Case – Steady State (Note 2)

Junction−to−Ambient – Steady State (Note 2)

January, 2020 − Rev. 0

°C/W

4.8

43.2

1 Publication Order Number:

NTMFS020N06C/D

Page 2

NTMFS020N06C

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

ID = 250 mA, ref to 25°C

VGS = 0 V,

= 60 V

TJ = 25°C 10

TJ = 125°C 250

VDS = 0 V, VGS = 20 V 100 nA

60 V

mV/°C

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

Gate Resistance R

GS(TH)

DS(on)

VGS = VDS, ID = 20 mA

ID = 20 mA, ref to 25°C

VGS = 10 V, ID = 4 A 16.3 19.6

VDS = 5 V, ID = 4 A 12 S

TA = 25°C 1.0

2.0 4.0 V

−7.8 mV/°C

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz, VDS = 30 V

VGS = 10 V, VDS = 30 V, ID = 4 A

355

260

4.9

5.8

1.4

2.3

0.53

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

VGS = 10 V, VDS = 30 V,

= 4 A, RG = 6 W

6.5

1.4

9.7

4.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V,

= 4 A

VGS = 0 V, dIS/dt = 100 A/ms,

= 30 V, IS = 4 A

TJ = 25°C 0.81 1.2

TJ = 125°C 0.67

12 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperatures.

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Page 3

NTMFS020N06C

TYPICAL CHARACTERISTICS

, DRAIN CURRENT (A)

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

, DRAIN−TO−SOURCE RESISTANCE (mW)

6.5

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

VGS = 10 V to 7 V

6.0 V

5.0 V

4.5 V

3.6 V

3.02.52.01.51.00.50

TJ = 25°C

= 4 A

8.07.5 8

9.58.57.0

109.0

, DRAIN CURRENT (A)

TJ = 25°C

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

Figure 4. On−Resistance vs. Drain Current and

Voltage

TJ = −55°C

TJ = 125°C

1.5 3.5

1.00.55.04.54.03.5

2.5 4.0

Gate Voltage

TJ = 25°C

3.02.00 4.5 5.0

VGS = 10 V

20 24 28

32124

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

2.5

2.0

1.5

1.0

0.5

VGS = 10 V

= 4 A

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

100K

10K

100

, LEAKAGE (nA)

DSS

150

17512510075250−25−50

0.1

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TJ = 175°C

TJ = 150°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

554535155

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NTMFS020N06C

TYPICAL CHARACTERISTICS

10K

100

C, CAPACITANCE (pF)

100

d(off)

d(on)

t, TIME (ns)

0.1

Figure 9. Resistive Switching Time Variation

ISS

OSS

VGS = 0 V

= 25°C

f = 1 MHz

RSS

60504010 200

, GATE−TO−SOURCE VOLTAGE (V)

VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VGS = 0 V

VGS = 10 V

= 30 V

= 4 A

100101

RG, GATE RESISTANCE (W)

, SOURCE CURRENT (A)

TJ = 125°C

0.1

0.3

, SOURCE−TO−DRAIN VOLTAGE (V)

TJ = 25°C

Figure 10. Diode Forward Voltage vs. Current

vs. Gate Resistance

100

VDS = 30 V

= 4 A

= 25°C

5410

TJ = −55°C

1.0

0.90.80.70.60.50.4

100

TA = 25°C Single Pulse VGS ≤ 10 V

, DRAIN CURRENT (A)

0.1

VDS, DRAIN−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)

Figure 11. Safe Operating Area Figure 12. Maximum Drain Current vs. Time in

Limit

DS(on)

Thermal Limit Package Limit

10 ms

100 ms

(A)

PEAK

1 ms

100 ms & 1 sec

101

10 ms

100

0.000001

= 100°C

J(initial)

0.00001 0.0001 0.001 0.01

J(initial)

= 25°C

Avalanche

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Page 5

(°C/W)

0.1

NTMFS020N06C

TYPICAL CHARACTERISTICS

50% Duty Cycle

20%

10%

Single Pulse

0.01

0.010.001 10.0001 0.10.000010.000001

PULSE TIME (sec)

Figure 13. Thermal Response

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Page 6

DFN5 5x6, 1.27P

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 2:1

2 X

0.20 C

0.10 C

0.05

PIN 5

(EXPOSED PAD)

1234

TOP VIEW

SIDE VIEW

A0.10 B

BOTTOM VIEW

DETAIL A

e/2

0.475

2 X

(SO−8FL)

CASE 488AA

ISSUE N

0.20 C

4 X

DETAIL A

RECOMMENDED

SOLDERING FOOTPRINT*

4.5600.495

1.530

SEATING

PLANE

3.200

DATE 25 JUN 201

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

A1 0.00 −−−

D1 4.70 4.90 D2 3.80 4.00

E1 5.70 5.90 E2 3.45 3.65

L1 0.125 REF

MILLIMETERS

A 0.90 1.00 b 0.33 0.41

c 0.23 0.28

D 5.15

5.00 5.30

E 6.15

6.00 6.30

e 1.27 BSC G 0.51 0.575 K 1.20 1.35 L 0.51 0.575

M 3.00 3.40

q 0 −−−

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

3.80 12

GENERIC

MARKING DIAGRAM*

XXXXXX

AYWZZ

XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some product may not follow the Generic Marking.

4.530

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

0.905

0.965

1.000

0.750

DIMENSIONS: MILLIMETERS

1.330

1.270 PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON14036D DFN5 5x6, 1.27P (SO−8FL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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ON Semiconductor NTMFS020N06C User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual