Page 1
MOSFET – Power, Single
N-Channel
100 V, 5.1 mW, 105 A
NTMFS005N10MCL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
and are RoHS Compliant
Typical Applications
• Synchronous Rectification
• AC−DC and DC−DC Power Supplies
• AC−DC Adapters (USB PD) SR
• Load Switch
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
V
(BR)DSS
100 V
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R
MAX ID MAX
DS(ON)
5.1 mW @ 10 V
7.1 mW @ 4.5 V
D (5,6)
105 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (L = 1 mH, I
Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Note 1)
q
JC
(Note 1)
q
JA
(Notes 1, 2)
= 25°C unless otherwise noted)
J
TC = 25°C
Steady
State
TA = 25°C
Steady
State
= 100 ms
p
L(pk)
TA = 25°C, t
= 18.8 A)
Symbol Value Unit
stg
100 V
±20 V
105 A
125 W
16 A
3 W
470 A
−55 to
+175
104 A
177 mJ
260 °C
°C
DSS
I
P
I
P
I
DM
TJ, T
E
T
GS
D
D
D
D
S
AS
L
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using 1 in
R
q
JC
R
q
JA
2
pad size, 1 oz. Cu pad.
1.2
50
°C/W
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
XXXXXX
AYWZZ
D
ORDERING INFORMATION
Device Package Shipping†
NTMFS005N10MCLT1G DFN5
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1500 /
Tape & Reel
D
D
© Semiconductor Components Industries, LLC, 2020
November, 2020 − Rev. 0
1 Publication Order Number:
NTMFS005N10MCL/D
Page 2
NTMFS005N10MCL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
ID = 250 mA, ref to 25°C
VGS = 0 V,
V
= 100 V
DS
TJ = 25°C 1 mA
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
100 V
52 mV/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = 192 mA
ID = 250 mA, ref to 25°C
VGS = 10 V, ID = 34 A 4.2 5.1 mW
1 3 V
−5.6 mV/°C
VGS = 4.5 V, ID = 27 A 5.6 7.1
Forward Transconductance g
Gate−Resistance R
FS
G
VDS = 10 V, ID = 50 A 155 S
TA = 25°C 0.85
W
CHARGES & CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Total Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
Output Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TOT)
GS
GD
GP
OSS
VGS = 0 V, f = 1 MHz, VDS = 50 V
4100
1350
22
VGS = 4.5 V, VDS = 50 V, ID = 34 A 26 nC
VGS = 10 V, VDS = 50 V, ID = 34 A
55
11
5
3 V
VGS = 0 V, VDD = 50 V 87 nC
pF
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
VGS = 10 V, VDS = 50 V,
= 34 A, RG = 6 W
I
r
D
17
6.7
57
f
12.3
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Reverse Recovery Charge Q
Charge Time t
Discharge Time t
V
SD
RR
RR
a
b
VGS = 0 V,
I
= 34 A
S
TJ = 25°C 0.85 1.3
TJ = 125°C 0.73
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 17 A
S
V
56 ns
54 nC
25 ns
31 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
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2
Page 3
NTMFS005N10MCL
TYPICAL CHARACTERISTICS
100
80
60
40
, DRAIN CURRENT (A)
D
I
20
0
012345
V
, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
DS
VGS = 10 to 3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
18
16
14
12
10
8
6
4
2
, DRAIN−TO−SOURCE RESISTANCE (mW)
0
12 3 4 5 6 7 8 910
DS(on)
R
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
= 34 A
I
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
100
VDS = 10 V
80
60
TJ = 25°C
40
, DRAIN CURRENT (A)
D
I
20
TJ = 150°C
0
0123 4
7
TJ = 25°C
6
5
4
3
, DRAIN−TO−SOURCE RESISTANCE (mW)
2
10 15 20 25 30 35 40 45 50
DS(on)
R
I
, DRAIN CURRENT (A)
D
TJ = −55°C
VGS = 4.5 V
VGS = 10 V
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
VGS = 10 V
= 34 A
I
D
2.0
1.5
, NORMALIZED DRAIN−TO−
1.0
SOURCE RESISTANCE
DS(on)
R
0.5
−50 −25 0 25 50 75 100 125 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
100
10
1
0.1
, LEAKAGE (nA)
DSS
I
0.01
150
0.001
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3
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
10 20 40 60 80 100
30 50 70 90
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Page 4
NTMFS005N10MCL
TYPICAL CHARACTERISTICS
10K
1K
C
iss
C
oss
10
9
8
7
6
100
10
C, CAPACITANCE (pF)
VGS = 0 V
= 25°C
T
J
f = 1 MHz
1
0 10 20 100
30 40 50 60 70 80 90
C
rss
5
Q
GS
GD
4
Q
3
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
V
0
0102030405060
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge
1000
100
t
d(off)
t
d(on)
t, TIME (ns)
10
t
f
t
r
1
VGS = 10 V
= 50 V
V
DS
I
= 34 A
D
, SOURCE CURRENT (A)
S
I
550
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
VGS = 0 V
10
TJ = 125°C TJ = 25°C TJ = −55°C
1
0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
VDS = 50 V
= 34 A
I
D
T
= 25°C
J
1000
100
10
TC = 25°C
≤ 10 V
V
GS
Single Pulse
, DRAIN CURRENT (A)
1
D
I
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (sec)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100 ms
& 1 s
10 ms
100 ms
0.5 ms
1 ms
10 ms
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4
100
TJ (initial) = 25°C
, (A)
PEAK
I
10
TJ (initial) = 125°C
1
0.000001
0.00001 0.0001 0.001 0.01 0.1
Figure 12. Maximum Drain Current vs. Time in
Avalanche
Page 5
0.1
(°C/W)
JC
q
Z
0.01
10
1
NTMFS005N10MCL
TYPICAL CHARACTERISTICS
50% Duty Cycle
20%
10%
5%
2%
1%
0.001
Single Pulse
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE TIME (sec)
Figure 13. Thermal Response
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5
Page 6
NTMFS005N10MCL
PACKAGE DIMENSIONS
0.05
0.10 C
0.10 C
c
D
2
D1
1234
TOP VIEW
SIDE VIEW
8X
b
A0.10 BC
L
14
2 X
e/2
e
0.20
A
B
E1
E
2
A
DETAIL A
K
DFN5 5x6, 1.27P
(SO−8FL)
C
CASE 488AA
ISSUE N
2 X
0.20 C
4 X
q
c
A1
C
SEATING
DETAIL A
PLANE
RECOMMENDED
SOLDERING FOOTPRINT*
2X
2X
0.475
2X
1.530
4.5600.495
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM MIN NOM
A1 0.00 −−−
D1 4.70 4.90
D2 3.80 4.00
E1 5.70 5.90
E2 3.45 3.65
L1 0.125 REF
STYLE 1:
PIN 1. SOURCE
MILLIMETERS
A 0.90 1.00
b 0.33 0.41
c 0.23 0.28
D 5.15
5.00 5.30
E 6.15
6.00 6.30
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
M 3.00 3.40
q 0 −−−
_
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
3.80
12
_
3.200
4.530
PIN 5
(EXPOSED PAD)
E2
L1
M
2X
1.330
0.905
1
G
D2
BOTTOM VIEW
0.965
1.000
4X
4X
0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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