ON Semiconductor NTMFS005N10MCL User Manual

MOSFET – Power, Single

N-Channel

100 V, 5.1 mW, 105 A

NTMFS005N10MCL

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free

and are RoHS Compliant

Typical Applications

• Synchronous Rectification

• AC−DC and DC−DC Power Supplies

• AC−DC Adapters (USB PD) SR

• Load Switch

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

V

(BR)DSS

100 V

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R

MAX ID MAX

DS(ON)

5.1 mW @ 10 V

7.1 mW @ 4.5 V

D (5,6)

105 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R

Power Dissipation
R

q

JC

Continuous Drain
Current R
(Notes 1, 2)

Power Dissipation
R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature
Range

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (L = 1 mH, I

Lead Temperature Soldering Reflow for Solder­ing Purposes (1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

(Note 1)

q

JC

(Note 1)

q

JA

(Notes 1, 2)

= 25°C unless otherwise noted)

J

TC = 25°C

Steady

State

TA = 25°C

Steady

State

= 100 ms

p

L(pk)

TA = 25°C, t

= 18.8 A)

Symbol Value Unit

stg

100 V

±20 V

105 A

125 W

16 A

3 W

470 A

−55 to
+175

104 A

177 mJ

260 °C

°C

DSS

I

P

I

P

I

DM

TJ, T

E

T

GS

D

D

D

D

S

AS

L

THERMAL RESISTANCE RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using 1 in

R

q

JC

R

q

JA

2

pad size, 1 oz. Cu pad.

1.2

50

°C/W

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING
DIAGRAM

1

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

S
S
S

G

D

XXXXXX

AYWZZ

D

ORDERING INFORMATION

Device Package Shipping†

NTMFS005N10MCLT1G DFN5

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

1500 /

Tape & Reel

D

D

© Semiconductor Components Industries, LLC, 2020

November, 2020 − Rev. 0

1 Publication Order Number:

NTMFS005N10MCL/D

NTMFS005N10MCL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

ID = 250 mA, ref to 25°C

VGS = 0 V,

V

= 100 V

DS

TJ = 25°C 1 mA

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

100 V

52 mV/°C

ON CHARACTERISTICS

Gate Threshold Voltage

Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 192 mA

ID = 250 mA, ref to 25°C

VGS = 10 V, ID = 34 A 4.2 5.1 mW

1 3 V

−5.6 mV/°C

VGS = 4.5 V, ID = 27 A 5.6 7.1

Forward Transconductance g

Gate−Resistance R

FS

G

VDS = 10 V, ID = 50 A 155 S

TA = 25°C 0.85

W

CHARGES & CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Total Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

Output Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TOT)

GS

GD

GP

OSS

VGS = 0 V, f = 1 MHz, VDS = 50 V

4100

1350

22

VGS = 4.5 V, VDS = 50 V, ID = 34 A 26 nC

VGS = 10 V, VDS = 50 V, ID = 34 A

55

11

5

3 V

VGS = 0 V, VDD = 50 V 87 nC

pF

nC

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

VGS = 10 V, VDS = 50 V,

= 34 A, RG = 6 W

I

r

D

17

6.7

57

f

12.3

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Reverse Recovery Charge Q

Charge Time t

Discharge Time t

V

SD

RR

RR

a

b

VGS = 0 V,

I

= 34 A

S

TJ = 25°C 0.85 1.3

TJ = 125°C 0.73

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 17 A

S

V

56 ns

54 nC

25 ns

31 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Switching characteristics are independent of operating junction temperatures

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