ON Semiconductor NTMD5838NL User Manual

NTMD5838NL

MOSFET – Power, Dual,

N-Channel, SO-8

40 V, 8.9 A, 20 mW

Features

• Low R

• Low Capacitance

• Optimized Gate Charge

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Note 1)

Power Dissipation
R

Continuous Drain
Current R
(Note 1)

Power Dissipation
R

Pulsed Drain
Current

Operating Junction and Storage
Temperature

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE MAXIMUM RATINGS

Junction−to−Ambient Steady State
(Notes 1 & 3)

Junction−to−Ambient − t ≤10 s (Note 1)

Junction−to−Ambient Steady State (Note 2)

1. Surface−mounted on FR4 board using 1 sq−in pad

2. Surface−mounted on FR4 board using 0.155 in sq (100mm

3. Both channels receive equivalent power dissipation

DS(on)

Compliant

= 25°C unless otherwise stated)

J

Parameter

TA = 25°C

q

JA

(Note 1)

q

JA

q

JA

(Note 1)

q

JA

(Cu area = 1.127 in sq [2 oz] including traces).

1 W applied on each channel: T

Steady

State

t ≤10 s

Parameter Symbol Value Unit

TA = 70°C 5.9

TA = 25°C

TA = 70°C 1.3

TA = 25°C

TA = 70°C 7.1

TA = 25°C

TA = 70°C 1.9

tp = 10 ms

= 2 W * 58°C/W + 25°C = 141°C

J

Symbol Value Unit

DSS

GS

I

D

P

D

I

D

P

D

I

DM

TJ, T

STG

S

EAS 20 mJ

IAS 21 A

T

L

R

q

JA

R

q

JA

R

q

JA

40 V

±20 V

7.4

2.1

8.9

3.0

35 A

−55 to
+150

7.0 A

260 °C

58

40

106

2

) pad size.

A

W

A

W

°C

°C/W

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V

G

(BR)DSS

40 V

R

MAX ID MAX

DS(ON)

20 mW @ 10 V

36.5 mW @ 4.5 V

N−CHANNEL MOSFET

D

G

S

8.9 A

D

S

MARKING DIAGRAM/

PIN ASSIGNMENT

D1 D1 D2D2

8

SO−8

CASE 751

STYLE 11

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

D5838N

AYWW

G

1

S1 G1 S2 G2

(Top View)

ORDERING INFORMATION

Device Package Shipping

NTMD5838NLR2G SO−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

2500/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2012

May, 2019 − Rev. 1

1 Publication Order Number:

NTMD5838NL/D

NTMD5838NL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS

T

DSS

GSS

VGS = 0 V, ID = 250 mA

/

J

VGS = 0 V,

V

= 40 V

DS

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 7 A 16.2 20

VGS = 4.5 V, ID = 7 A 25.0 36.5

Forward Transconductance g

FS

VDS = 15 V, ID = 7 A 4.0 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

Gate Resistance R

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

GP

G

VGS = 0 V, f = 1 MHz, VDS = 20 V

VGS = 10 V, VDS = 20 V; ID = 7 A 17

VGS = 4.5 V, VDS = 20 V; ID = 7 A

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDS = 20 V,

= 7 A, RG = 2.5 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 7 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 7 A

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

40 V

32

TJ = 25 °C 1.0

TJ = 125°C 100

1.0 1.8 3.0 V

6.0 mV/°C

785

123

90

8.6 11

0.8

2.8

4.0

3.2 V

1.8

11

23

17

4.0

TJ = 25°C 0.84 1.2

TJ = 125°C 0.7

17

11

6.0

10 nC

mV/°C

mA

mW

pF

nC

W

ns

V

ns

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NTMD5838NL

TYPICAL PERFORMANCE CURVES

50

10 V

40

5.5 V

7.5 V

4.4 V

TJ = 25°C

4 V

30

20

DRAIN CURRENT (A)

D,

10

I

3.6 V

3 V

0

012345

V

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

Figure 1. On−Region Characteristics

0.06
TJ = 25°C

= 7 A

I

0.05

0.04

0.03

D

50

VDS ≥ 5 V

40

30

20

TJ = 125°C

DRAIN CURRENT (A)

D,

10

I

TJ = 25°C

TJ = −55°C

0

2345

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

0.035

TJ = 25°C

0.025

0.015

VGS = 4.5 V

VGS = 10 V

0.02

DRAIN−TO−SOURCE RESISTANCE (W)

0.01

DS(on),

2345678910

R

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.6
VGS = 4.5 V

= 7 A

I

D

1.4

1.2

1

DRAIN−TO−SOURCE

0.8

DS(on),

R

RESISTANCE (NORMALIZED)

0.6

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

DRAIN−TO−SOURCE RESISTANCE (W)

0.005
2 6 10 14 18

DS(on),

R

DRAIN CURRENT (A)

I

D,

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

100000

VGS = 0 V

10000

, LEAKAGE (nA)

1000

DSS

I

TJ = 150°C

TJ = 125°C

100

5152535

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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