ON Semiconductor NTK3043N User Manual

NTK3043N

MOSFET – Power,

N-Channel with ESD
Protection, SOT-723

20 V, 285 mA

Features

• Enables High Density PCB Manufacturing

• 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89

• Low Voltage Drive Makes this Device Ideal for Portable Equipment

• Low Threshold Levels, V

• Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin

Environments such as Portable Electronics

• Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels Using the Same Basic Topology

• These are Pb−Free and Halogen−Free Devices

Applications

• Interfacing, Switching

• High Speed Switching

• Cellular Phones, PDAs

GS(TH)

< 1.3 V

V

(BR)DSS

20 V

www.onsemi.com

R

TYP ID Max

DS(on)

1.5 W @ 4.5 V

2.4 W @ 2.5 V

5.1 W @ 1.8 V

6.8 W @ 1.65 V

Top View

3

285 mA

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current (Note 1)

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 2)

Power Dissipation
(Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size.

= 25°C unless otherwise stated)

J

Symbol Value Unit

DSS

GS

Steady

State

t v 5 s TA = 25°C 285

Steady

State

t v 5 s 545

Steady

State

TA = 25°C

TA = 85°C 185

TA = 25°C P

TA = 25°C

TA = 85°C 155

TA = 25°C P

tp = 10 ms

I

D

D

I

D

D

I

DM

STG

S

T

L

20 V

±10 V

255

440

210

310

400 mA

−55 to
150

286 mA

260 °C

mA

mW

mA

mW

°C

12

1 − Gate
2 − Source
3 − Drain

MARKING
DIAGRAM

KA

SOT−723

CASE 631AA

STYLE 5

KA = Device Code
M = Date Code

1

M

ORDERING INFORMATION

Device Package Shipping

NTK3043NT1G SOT−723* 4000 / Tape & Reel

NTK3043NT5G SOT−723* 8000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

*These packages are inherently Pb−Free.

†

© Semiconductor Components Industries, LLC, 2013

July, 2019 − Rev. 5

1 Publication Order Number:

NTK3043N/D

NTK3043N

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – t = 5 s (Note 3)

Junction−to−Ambient – Steady State Minimum Pad (Note 4)

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

4. Surface−mounted on FR4 board using the minimum recommended pad size.

R

q

JA

R

q

JA

R

q

JA

280

228

400

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Test Condition Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

VGS = 0 V, ID = 100 mA

ID = 100 mA, Reference to 25°C

V

Temperature Coefficient

Zero Gate Voltage Drain Current VGS = 0 V,

V

= 16 V

DS

TJ = 25°C

TJ = 125°C 10

Gate−to−Source Leakage Current VDS = 0 V, VGS = ±5 V I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient V

Drain−to−Source On Resistance

VGS = VDS, ID = 250 mA

VGS = 4.5V, ID = 10 mA

VGS = 4.5V, ID = 255 mA 1.6 3.8

VGS = 2.5 V, ID = 1 mA 2.4 4.5

VGS = 1.8 V, ID = 1 mA 5.1 10

VGS = 1.65 V, ID = 1 mA 6.8 15

Forward Transconductance VDS = 5 V, ID = 100 mA g

Gate Resistance TA = 25°C R

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

VGS = 0 V, f = 1 MHz, VDS = 10 V

Reverse Transfer Capacitance C

SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

VGS = 4.5 V, VDD = 5 V, ID = 10 mA,

= 6 W

R

G

Fall Time t

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VGS = 0 V, IS= 286 mA

TJ = 25°C

TJ = 125°C 0.69

Reverse Recovery Time

Charge Time t

Discharge Time t

VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/ms,

I

= 286 mA

S

Reverse Recovery Charge Q

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

V

(BR)DSS

(BR)DSS/TJ

I

DSS

GSS

V

GS(TH)

GS(TH)/TJ

R

DS(ON)

FS

G

C

ISS

OSS

RSS

t

d(ON)

r

d(OFF)

f

V

SD

t

RR

a

b

RR

20 V

27

mV/°C

1

1

0.4 1.3 V

−2.4 mV/°C

1.5 3.4

0.275 S

2.2

11

8.3

2.7

13

15

94

55

0.83 1.2

9.1

7.1

2.0

3.7 nC

mA

mA

W

kW

pF

ns

V

ns

www.onsemi.com

2