ON Semiconductor NTK3043N User Manual

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NTK3043N

MOSFET – Power,

N-Channel with ESD Protection, SOT-723

20 V, 285 mA

Features

• Enables High Density PCB Manufacturing

• 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89

• Low Voltage Drive Makes this Device Ideal for Portable Equipment

• Low Threshold Levels, V

• Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin

Environments such as Portable Electronics

• Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels Using the Same Basic Topology

• These are Pb−Free and Halogen−Free Devices

Applications

• Interfacing, Switching

• High Speed Switching

• Cellular Phones, PDAs

GS(TH)

< 1.3 V

(BR)DSS

20 V

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TYP ID Max

DS(on)

1.5 W @ 4.5 V

2.4 W @ 2.5 V

5.1 W @ 1.8 V

6.8 W @ 1.65 V

Top View

285 mA

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes (1/8” from case for 10 seconds)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size.

= 25°C unless otherwise stated)

Symbol Value Unit

DSS

Steady

State

t v 5 s TA = 25°C 285

Steady

State

t v 5 s 545

Steady

State

TA = 25°C

TA = 85°C 185

TA = 25°C P

TA = 25°C

TA = 85°C 155

TA = 25°C P

tp = 10 ms

STG

20 V

±10 V

255

440

210

310

400 mA

−55 to 150

286 mA

260 °C

°C

1 − Gate 2 − Source 3 − Drain

MARKING DIAGRAM

SOT−723

CASE 631AA

STYLE 5

KA = Device Code M = Date Code

ORDERING INFORMATION

Device Package Shipping

NTK3043NT1G SOT−723* 4000 / Tape & Reel

NTK3043NT5G SOT−723* 8000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

*These packages are inherently Pb−Free.

†

July, 2019 − Rev. 5

1 Publication Order Number:

NTK3043N/D

NTK3043N

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – t = 5 s (Note 3)

Junction−to−Ambient – Steady State Minimum Pad (Note 4)

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

4. Surface−mounted on FR4 board using the minimum recommended pad size.

280

228

400

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Test Condition Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

VGS = 0 V, ID = 100 mA

ID = 100 mA, Reference to 25°C

Temperature Coefficient

Zero Gate Voltage Drain Current VGS = 0 V,

= 16 V

TJ = 25°C

TJ = 125°C 10

Gate−to−Source Leakage Current VDS = 0 V, VGS = ±5 V I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient V

Drain−to−Source On Resistance

VGS = VDS, ID = 250 mA

VGS = 4.5V, ID = 10 mA

VGS = 4.5V, ID = 255 mA 1.6 3.8

VGS = 2.5 V, ID = 1 mA 2.4 4.5

VGS = 1.8 V, ID = 1 mA 5.1 10

VGS = 1.65 V, ID = 1 mA 6.8 15

Forward Transconductance VDS = 5 V, ID = 100 mA g

Gate Resistance TA = 25°C R

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

VGS = 0 V, f = 1 MHz, VDS = 10 V

Reverse Transfer Capacitance C

SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

VGS = 4.5 V, VDD = 5 V, ID = 10 mA,

= 6 W

Fall Time t

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VGS = 0 V, IS= 286 mA

TJ = 25°C

TJ = 125°C 0.69

Reverse Recovery Time

Charge Time t

Discharge Time t

VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/ms,

= 286 mA

Reverse Recovery Charge Q

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

(BR)DSS

(BR)DSS/TJ

DSS

GSS

GS(TH)

GS(TH)/TJ

DS(ON)

ISS

OSS

RSS

d(ON)

d(OFF)

20 V

mV/°C

0.4 1.3 V

−2.4 mV/°C

1.5 3.4

0.275 S

2.2

8.3

2.7

0.83 1.2

9.1

7.1

2.0

3.7 nC

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NTK3043N

TYPICAL PERFORMANCE CURVES

0.3

VGS = 3 V to 10 V

0.2

0.1

DRAIN CURRENT (AMPS)

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.3

2.5 V

VDS ≥ 5 V

TJ = 25°C

2.2 V

0.2

2.0 V

0.1

1.8 V

1.6 V

1.4 V

DRAIN CURRENT (AMPS)

TJ = 25°C

TJ = 125°C

1.5

TJ = −55°C

2.5

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID = 0.255 A

= 25°C

TJ = 25°C

VGS = 2.5 V

DRAIN−TO−SOURCE RESISTANCE (W)

VGS = 4.5 V

DS(on),

27593

, GATE−TO−SOURCE VOLTAGE (VOLTS)

8 0.2

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

9.0

8.0

7.0

6.0 VGS = 1.8 V, ID = 10 mA

VGS = 1.65 V, ID = 1 mA

0 0.30.1

DS(on),

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1000

100

VGS = 0 V

TJ = 150°C

5.0

4.0

DRAIN−TO−SOURCE

RESISTANCE

3.0

2.0

DS(on),

1.0

−50 0−25 25

Figure 5. On−Resistance Variation with

VGS = 2.5 V, ID = 10 mA

VGS = 4.5 V, ID = 10 mA

50 150

TJ, JUNCTION TEMPERATURE (°C)

Temperature

, LEAKAGE (nA)

DSS

125100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

TJ = 125°C

vs. Voltage

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NTK3043N

TYPICAL PERFORMANCE CURVES

TJ = 25°C

iss

rss

C, CAPACITANCE (pF)

VGS = 0 VVDS = 0 V

10 5 0 5 10 15 20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

VDD = 5 V

= 10 mA

= 4.5 V

100

d(off)

iss

oss

rss

t, TIME (ns)

d(on)

1 10 100

, GATE RESISTANCE (OHMS)

Figure 8. Resistive Switching Time

Variation vs. Gate Resistance

0.4 VGS = 0 V

TJ = 25°C

0.3

0.2

0.1

, SOURCE CURRENT (AMPS)

TJ = 150°C

TJ = 125°C

0.4 0.70.5

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Diode Forward Voltage vs. Current

TJ = −55°C

0.90.8

1.00.6

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 4:1

−X−

TOP VIEW

−Y−

X0.08 Y

SOT−723

CASE 631AA−01

ISSUE D

SIDE VIEW

DATE 10 AUG 2009

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

DIM MIN NOM MAX

A 0.45 0.50 0.55 b 0.15 0.21 0.27

b1 0.25 0.31 0.37

C 0.07 0.12 0.17 D 1.15 1.20 1.25 E 0.75 0.80 0.85 e

H 1.15 1.20 1.25

L2 0.15 0.20 0.25

0.40 BSC

0.29 REF

BOTTOM VIEW

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 2:

PIN 1. ANODE

2. N/C

3. CATHODE

STYLE 3:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 4:

RECOMMENDED

SOLDERING FOOTPRINT*

0.40

0.27

PACKAGE

OUTLINE

1.50

0.52

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

0.36

DIMENSIONS: MILLIMETERS

PIN 1. CATHODE

2. CATHODE

3. ANODE

STYLE 5:

PIN 1. GATE

2. SOURCE

3. DRAIN

GENERIC

MARKING DIAGRAM*

XX M

XX = Specific Device Code M = Date Code

*This information is generic. Please refer

to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON12989D

SOT−723

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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ON Semiconductor NTK3043N User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual