ON Semiconductor NTJD4401N, NVJD4401N User Manual

NTJD4401N, NVJD4401N

MOSFET – Dual, N-Channel,

Small Signal, ESD Protection, SC-88

20 V

Features

• Small Footprint (2 x 2 mm)

• Low Gate Charge N−Channel Device

• ESD Protected Gate

• Same Package as SC−70 (6 Leads)

• AEC−Q101 Qualified and PPAP Capable − NVJD4401N

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Load Power Switching

• Li−Ion Battery Supplied Devices

• Cell Phones, Media Players, Digital Cameras, PDAs

• DC−DC Conversion

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current (Based on R

Power Dissipation (Based on R

Continuous Drain Current (Based on R

Power Dissipation (Based on R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Continuous Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

)

q

JA

)

q

JA

)

q

JL

)

q

JL

THERMAL RESISTANCE RATINGS (Note 1)

Parameter Symbol Typ Max Units

Junction−to−Ambient – Steady State

Junction−to−Lead (Drain) – Steady State

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.

= 25°C unless otherwise stated)

J

DSS

GS

Steady

State

Steady

State

Steady

State

Steady

State

TA = 25°C

TA = 85°C 0.46

TA = 25°C

TA = 85°C 0.14

TA = 25°C

TA = 85°C 0.65

TA = 25°C

TA = 85°C 0.29

t ≤10 ms

I

D

P

I

D

P

I

DM

S

T

R

q

JA

R

q

JL

D

STG

L

400 458

194 252

20 V

±12 V

0.63

0.27

0.91

0.55

±1.2 A

−55 to 150

0.63 A

260 °C

A

W

A

W

°C

°C/W

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V

(BR)DSS

20 V

R

Typ ID Max

DS(on)

0.29 W @ 4.5 V

0.36 W @ 2.5 V

0.63 A

SC−88 (SOT−363)

S

1

G

D

2

1

3

2

Top View

D

6

5

4

1

G

2

S

2

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

1

SC−88/SOT−363

CASE 419B

STYLE 28

TD = Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

6

TD M G

G

1

S1 G1 D2

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.

May, 2019 − Rev. 7

1 Publication Order Number:

NTJD4401N/D

NTJD4401N, NVJD4401N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise stated)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

V

GS

DS

= 0 V, I

= 0 V, V

= 250 mA

D

= 16 V 1.0

DS

= ±12 V 10

GS

20 27 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient

V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

V

= VDS, ID = 250 mA

GS

V

= 4.5 V, I

GS

V

= 2.5 V, I

GS

V

= 4.0 V, I

DS

= 0.63 A 0.29 0.375 W

D

= 0.40 A 0.36 0.445

D

= 0.63 A 2.0 S

D

0.6 0.92 1.5 V

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

GS

V

DS

= 4.5 V, V

I

= 0.63 A

D

= 20 V

DS

= 10 V,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time tr 0.227

Turn−Off Delay Time td

td

(ON)

(OFF)

V

GS

I

D

= 4.5 V, V

= 0.5 A, R

DD

= 20 W

G

= 10 V,

0.083 ms

0.786

Fall Time tf 0.506

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

V

SD

RR

V

= 0 V,

GS

I

=0.23 A

S

V

= 0 V, dIS/dt = 100 A/ms,

GS

I

= 0.63 A

S

T

= 25°C 0.76 1.1

J

T

= 125°C 0.63

J

0.410

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

22 mV/ °C

mA

−2.1 mV/ °C

33 46

pF

13 22

2.8 5.0

1.3 3.0

nC

0.1

0.2

0.4

V

ms

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2

NTJD4401N, NVJD4401N

1.4

1.2

VGS = 4.5 V to 2.2 V

VGS = 2 V

1

0.8

0.6

0.4

DRAIN CURRENT (AMPS)

D,

I

0.2

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.7 VGS = 4.5 V

0.6

0.5

0.4

TYPICAL PERFORMANCE CURVES (T

1.2

0.8

0.6

0.4

DRAIN CURRENT (AMPS)

D,

0.2

I

0.7

0.6

0.5

0.4

4

TJ = 125°C

62

TJ = 25°C

1.8 V

1.6 V

1.4 V

1.2 V

108

= 25°C unless otherwise noted)

J

VDS ≥ 10 V

1

TJ = 125°C

25°C

0

0.4

0.8

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

VGS = 2.5 V

TJ = 125°C

TJ = 25°C

TJ = −55°C

1.6

21.2 2.4

0.3

0.2

TJ = 25°C

TJ = −55°C

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0

0 1.4

DS(on),

R

0.4 1

0.2 0.6

ID, DRAIN CURRENT (AMPS)

1.20.8

Figure 3. On−Resistance vs. Drain Current and

Temperature

2

ID = 0.63 A

= 4.5 V

V

1.8

GS

and 2.5 V

1.6

1.4

1.2

DRAIN−TO−SOURCE

1

DS(on),

R

0.8

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

TJ, JUNCTION TEMPERATURE (°C)

50 125100

75 150

0.3 TJ = −55°C

0.2

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0

0.2 0.6

0 1.4

DS(on),

R

0.4 1

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Temperature

80

TJ = 25°C

VGS = 0 V

60

40

20

C, CAPACITANCE (pF)

0

52015

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

C

iss

C

oss

C

rss

100

1.20.8

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Capacitance Variation

3

ON Semiconductor NTJD4401N, NVJD4401N User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual