ON Semiconductor NTJD1155L User Manual
NTJD1155L
MOSFET – Power,
P-Channel, High Side Load
Switch with Level-Shift,
SC-88
8 V, +1.3 A
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The NTJD1155L integrates a P and N−Channel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high
load currents are needed. The P−Channel device is specifically
designed as a load switch using ON Semiconductor state−of−the−art
trench technology. The N−Channel, with an external resistor (R1),
functions as a level−shift to drive the P−Channel. The N−Channel
MOSFET has internal ESD protection and can be driven by logic
signals as low as 1.5 V. The NTJD1155L operates on supply lines from
1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both
V
and V
IN
ON/OFF.
Features
• Extremely Low R
P−Channel Load Switch MOSFET
DS(on)
• Level Shift MOSFET is ESD Protected
• Low Profile, Small Footprint Package
• V
Range 1.8 to 8.0 V
IN
• ON/OFF Range 1.5 to 8.0 V
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Input Voltage (V
ON/OFF Voltage (VGS, N−Ch) V
Continuous Load Current
(Note 1)
Power Dissipation
(Note 1)
Pulsed Load Current
Operating Junction and Storage Temperature TJ,
Source Current (Body Diode) I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DSS
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Foot – Steady State (Note 1)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= 25°C unless otherwise noted)
J
Rating
, P−Ch) V
Steady
State
Steady
State
T
= 25°C
A
T
= 85°C ±0.9
A
T
= 25°C
A
T
= 85°C 0.20
A
t
= 10 ms
p
Symbol Value Unit
ON/OFF
T
R
R
IN
I
L
P
I
LM
STG
S
T
q
q
D
L
JA
JF
8.0 V
8.0 V
±1.3
0.40
±3.9 A
−55 to
150
−0.4 A
260 °C
320
220
A
W
°C
°C/W
(BR)DSS
8.0 V
TYP
DS(on)
130 mW @ −4.5 V
170 mW @ −2.5 V
260 mW @ −1.8 V
ID MAXV
±1.3 A
R
SIMPLIFIED SCHEMATIC
4
6
5
2,3
Q2
Q1
1
MARKING
SC−88
(SOT−363)
1
CASE 419B
STYLE 30
TB = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
DIAGRAM
TB M G
G
1
PIN ASSIGNMENT
S1
G1
S2
5
6
1
D2
4
2
3
D2
D1/G2
ORDERING INFORMATION
Device Package Shipping
NTJD1155LT1G,
NTJD1155LT2G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SC−88
(Pb−Free)
3000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2012
May, 2019 − Rev. 6
1 Publication Order Number:
NTJD1155L/D
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
NTJD1155L
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NTJD1155L
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
J
Characteristic Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Q2 Drain−to−Source Breakdown Voltage
Forward Leakage Current I
Q1 Gate−to−Source Leakage Current I
Q1 Diode Forward On−Voltage V
ON CHARACTERISTICS
ON/OFF Voltage
V
Q1 Gate Threshold Voltage V
Input Voltage V
Q2 Drain−to−Source On Resistance R
Load Current I
V
IN
FL
GSS
SD
ON/OFF
GS1(th)
IN
DS(on)
L
V
V
V
DS2
V
V
V
V
ON/OFF
V
V
= 0 V, I
GS2
= 0 V,
GS1
= −8.0 V
= 0 V, V
DS1
I
= −0.4 A, V
S
= V
GS1
= V
GS1
= 1.5 V
≤ 0.2 V, V
DROP
V
ON/OFF
≤ 0.3 V, V
DROP
V
ON/OFF
= 250 mA
D2
−8.0 V
TJ = 25°C 1.0 mA
TJ = 125°C 10
= ±8.0 V ±100 nA
GS1
= 0 V −0.8 −1.1 V
GS1
1.5 8.0 V
DS1
DS1
, I
= 250 mA
D
, I
= 250 mA
D
IN
= 1.5 V
IN
= 1.5 V
V
= 4.5 V
IN
I
= 1.2 A
L
V
= 2.5 V
IN
I
= 1.0 A
L
V
= 1.8 V
IN
I
= 0.7 A
L
= 5.0 V,
= 2.5 V,
0.4 1.0 V
1.8 8.0 V
130 175 mW
170 220
260 320
1.0
1.0
A
V
IN
R1
4
Q2
6
ON/OFF
5
Q1
C
I
R2
Figure 1. Load Switch Application
Components Description Values
R1 Pullup Resistor
R2 Optional Slew−Rate Control
CO, C
I
C1 Optional In−Rush Current Control Typical ≤ 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn−on.
Output Capacitance
1
R2
2,3
V
OUT
C1
6
C
O
LOAD
GND
Typical 10 kW to 1.0 MW*
Typical 0 to 100 kW*
Usually < 1.0 mF
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