ON Semiconductor NTJD1155L User Manual

NTJD1155L

MOSFET – Power,

P-Channel, High Side Load
Switch with Level-Shift,
SC-88

8 V, +1.3 A

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The NTJD1155L integrates a P and N−Channel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high
load currents are needed. The P−Channel device is specifically
designed as a load switch using ON Semiconductor state−of−the−art
trench technology. The N−Channel, with an external resistor (R1),
functions as a level−shift to drive the P−Channel. The N−Channel
MOSFET has internal ESD protection and can be driven by logic
signals as low as 1.5 V. The NTJD1155L operates on supply lines from

1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both
V

and V

IN

ON/OFF.

Features

• Extremely Low R

P−Channel Load Switch MOSFET

DS(on)

• Level Shift MOSFET is ESD Protected

• Low Profile, Small Footprint Package

• V

Range 1.8 to 8.0 V

IN

• ON/OFF Range 1.5 to 8.0 V

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Input Voltage (V

ON/OFF Voltage (VGS, N−Ch) V

Continuous Load Current
(Note 1)

Power Dissipation
(Note 1)

Pulsed Load Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

DSS

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Foot – Steady State (Note 1)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

= 25°C unless otherwise noted)

J

Rating

, P−Ch) V

Steady

State

Steady

State

T

= 25°C

A

T

= 85°C ±0.9

A

T

= 25°C

A

T

= 85°C 0.20

A

t

= 10 ms

p

Symbol Value Unit

ON/OFF

T

R

R

IN

I

L

P

I

LM

STG

S

T

q

q

D

L

JA

JF

8.0 V

8.0 V

±1.3

0.40

±3.9 A

−55 to
150

−0.4 A

260 °C

320

220

A

W

°C

°C/W

(BR)DSS

8.0 V

TYP

DS(on)

130 mW @ −4.5 V

170 mW @ −2.5 V

260 mW @ −1.8 V

ID MAXV

±1.3 A

R

SIMPLIFIED SCHEMATIC

4

6

5

2,3

Q2

Q1

1

MARKING

SC−88

(SOT−363)

1

CASE 419B

STYLE 30

TB = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)

DIAGRAM

TB M G

G

1

PIN ASSIGNMENT

S1

G1

S2

5

6

1

D2

4

2

3
D2

D1/G2

ORDERING INFORMATION

Device Package Shipping

NTJD1155LT1G,
NTJD1155LT2G

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

SC−88

(Pb−Free)

3000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2012

May, 2019 − Rev. 6

1 Publication Order Number:

NTJD1155L/D

1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).

NTJD1155L

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2

NTJD1155L

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Q2 Drain−to−Source Breakdown Voltage

Forward Leakage Current I

Q1 Gate−to−Source Leakage Current I

Q1 Diode Forward On−Voltage V

ON CHARACTERISTICS

ON/OFF Voltage

V

Q1 Gate Threshold Voltage V

Input Voltage V

Q2 Drain−to−Source On Resistance R

Load Current I

V

IN

FL

GSS

SD

ON/OFF

GS1(th)

IN

DS(on)

L

V

V

V

DS2

V

V

V

V

ON/OFF

V

V

= 0 V, I

GS2

= 0 V,

GS1

= −8.0 V

= 0 V, V

DS1

I

= −0.4 A, V

S

= V

GS1

= V

GS1

= 1.5 V

≤ 0.2 V, V

DROP

V

ON/OFF

≤ 0.3 V, V

DROP

V

ON/OFF

= 250 mA

D2

−8.0 V

TJ = 25°C 1.0 mA

TJ = 125°C 10

= ±8.0 V ±100 nA

GS1

= 0 V −0.8 −1.1 V

GS1

1.5 8.0 V

DS1

DS1

, I

= 250 mA

D

, I

= 250 mA

D

IN

= 1.5 V

IN

= 1.5 V

V

= 4.5 V

IN

I

= 1.2 A

L

V

= 2.5 V

IN

I

= 1.0 A

L

V

= 1.8 V

IN

I

= 0.7 A

L

= 5.0 V,

= 2.5 V,

0.4 1.0 V

1.8 8.0 V

130 175 mW

170 220

260 320

1.0

1.0

A

V

IN

R1

4

Q2

6

ON/OFF

5

Q1

C

I

R2

Figure 1. Load Switch Application

Components Description Values

R1 Pullup Resistor

R2 Optional Slew−Rate Control

CO, C

I

C1 Optional In−Rush Current Control Typical ≤ 1000 pF

*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn−on.

Output Capacitance

1

R2

2,3

V

OUT

C1

6

C

O

LOAD

GND

Typical 10 kW to 1.0 MW*

Typical 0 to 100 kW*

Usually < 1.0 mF

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