ON Semiconductor NTHD4401P User Manual

NTHD4401P

l

T

l

s

Power MOSFET

−20 V, −3.0 A, Dual P−Channel, ChipFETt

Features

• Low R

• Leadless ChipFET Package 40% Smaller Footprint than TSOP−6

• ChipFET Package with Excellent Thermal Capabilities where Heat

Transfer is Required

• Pb−Free Package is Available

Applications

• Charge Control in Battery Chargers

• Optimized for Battery and Load Management Applications in

Portable Equipment

• MP3 Players, Cell Phones, Digital Cameras, PDAs

• Buck and Boost DC−DC Converters

and Fast Switching Speed in a ChipFET Package

DS(on)

G

1

(BR)DSS

−20 V

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R

TYP

DS(on)

130 mW @ −4.5 V
200 mW @ −2.5 V

S

1

G

ID MAXV

−3.0 A

S

2

2

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1)

Power Dissipation
(Note 1)

Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I
Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

stg

−20 V

"12 V

−2.1

1.1

−9.0 A

−55 to
150

−2.5 A
260 °C

A

W

°C

DSS

GS

Steady

State
t v 5 s TA = 25°C −3.0
Steady

State
t v 5 s TA = 25°C 2.1

TA = 25°C
TA = 85°C −1.5

TA = 25°C
TA = 85°C 0.6

tp = 10 ms

I

D

P

D

I

DM

S

T

L

THERMAL RESISTANCE RATINGS

Rating Symbol Value Unit

Junction−to−Ambient − Steady State (Note 1) R
Junction−to−Ambient − t v 5 s 60

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).

© Semiconductor Components Industries, LLC, 2005

November, 2005 − Rev. 4

q

JA

°C/W

110

1 Publication Order Number:

D

1

P−Channel MOSFET

PIN

CONNECTIONS

81

D

1

7

D

1

6

D

2

5

D

2

2
3
4

C4 = Specific Device Code
M = Month Code
G = Pb−Free Package

P−Channel MOSFE

ChipFET

CASE 1206A

STYLE 2

MARKING
DIAGRAM

S

1

1

2

G

1

S

2

G

2

G

3
4

C4 M

D

2

8
7
6
5

ORDERING INFORMATION

Device Package Shipping

NTHD4401PT1 ChipFET 3000/Tape & Ree
NTHD4401PT1G ChipFET

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000/Tape & Ree

NTHD4401P/D

†

NTHD4401P

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V
Drain−to−Source Breakdown Voltage Tem-

perature Coefficient

V

(Br)DSS/TJ

Zero Gate Voltage Drain Current I

(Br)DSS

DSS

VGS = 0 V, ID = −250 mA

VGS = 0 V TJ = 25°C −1.0 mA

VDS = −16 V TJ = 85°C −5.0

Gate−to−Source Leakage Current I

GSS

VDS = 0 V, VGS = "12 V "100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V
Gate Threshold Temperature Coefficient V
Drain−to−Source On Resistance R

GS(th)

GS(th)/TJ

DS(on)

VGS = VDS, ID = −250 mA

VGS = −4.5 V, ID = −2.1 A
VGS = −2.5 V, ID = −1.7 A
VGS = −1.8 V, ID = −1.0 A

Forward Transconductance g

FS

VDS = −10 V, ID = −2.1 A 5.0 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q

iss

oss

rss

G(TOT)

G(TH)

GS
GD

VGS = 0 V, f = 1.0 MHz,

VDS = −10 V

VGS = −4.5 V, VDS = −10 V,

ID = −2.1 A

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t

d(on)

r

d(off)

f

VGS = −4.5 V, VDD = −16 V,

ID = −2.1 A, RG = 2.5 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

SD

VGS = 0 V

IS = −2.5 A
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

rr
a
b

RR

VGS = 0 V, dIS/dt = 90 A/ms,

IS = −2.1 A

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

−20 −23 V

−8.0 mV/°C

−0.6 −0.75 −1.2 V

2.65 mV/°C

0.130

0.200

0.155

0.240

0.34

185 300

95 150
30 50

3.0 6.0

0.2

0.5

0.9

7.0 12
13 25
33 50
27 40

−0.85 −1.15

32
10
22
15 nC

W

pF

nC

ns

V

ns

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2

NTHD4401P

4

−2.2 V

3

2

1

DRAIN CURRENT (AMPS)

D,

−I
0

0

1

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.5

0.4

0.3

0.2

TYPICAL PERFORMANCE CURVES (T

VGS = −6 V to −3 V
VGS = −2.4 V

4

−2 V

−1.8 V

−1.6 V

−1.4 V

−1.2 V

5

TJ = 25°C

632

78

ID = −2.1 A
TJ = 25°C

= 25°C unless otherwise noted)

J

4

VDS ≥ −10 V

3

2

1

DRAIN CURRENT (AMPS)

D,

−I

TC = −55°C

25°C

0

0.5

1

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.25
TJ = 25°C

0.225

0.2

0.175

0.15

VGS = −2.5 V

100°C

21.5 2.5

3

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0

16

DS(on),

R

24

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

35

Figure 3. On−Resistance vs. Gate−to−Source

0.125

DRAIN−TO−SOURCE RESISTANCE (W)

0.1

0.5 4.5

DS(on),

R

1.5 2.5 3.5

−ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Voltage

VGS = −4.5 V

Gate Voltage

1.6
ID = −2.1 A
VGS = −4.5 V

1.4

ID = −1.0 A
VGS = −1.8 V

1.2

1.2

1

DRAIN−TO−SOURCE

0.8

DS(on),

R

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

Figure 5. On−Resistance Variation with

50 125100

75 150

TJ, JUNCTION TEMPERATURE (°C)

Temperature

1

DRAIN−TO−SOURCE

DS(on),

R

RESISTANCE (NORMALIZED)

0.8

−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)

Figure 6. On−Resistance Variation with

Temperature

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