Datasheet NTGS3443T1 Datasheet (ON Semiconductor)

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NTGS3443T1

Power MOSFET
2 Amps, 20 Volts

P−Channel TSOP−6

Features

• Ultra Low R

• Higher Efficiency Extending Battery Life

• Miniature TSOP6 Surface Mount Package

• Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

Applications

• Power Management in Portable and Battery−Powered Products, i.e.:

Cellular and Cordless T elephones, and PCMCIA Cards

DS(on)

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2 AMPERES

20 VOLTS

R

DS(on)

= 65 m

P−Channel

1256

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Thermal Resistance

Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
Drain Current − Continuous @ T

− Pulsed Drain Current (T

Thermal Resistance

Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
Drain Current − Continuous @ T

− Pulsed Drain Current (T

Thermal Resistance

Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
Drain Current − Continuous @ T

− Pulsed Drain Current (T

Operating and Storage Temperature Range TJ, T

Maximum Lead Temperature for Soldering

Purposes for 10 Seconds

1. Minimum FR−4 or G−10PCB, operating to steady state.

2. Mounted onto a 2 in square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), operating to steady state.

3. Mounted onto a 2 in square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), t  5.0 seconds.

= 25°C unless otherwise noted)

J

Rating

= 25°C

A

= 25°C

A

 10 S)

p

= 25°C

A

= 25°C

A

 10 S)

p

= 25°C

A

= 25°C

A

 10 S)

p

Symbol Value Unit

stg

−20 Volts

12 Volts

244

0.5

−2.2

−10

128

1.0

−3.1

−14

62.5

2.0

−4.4

−20

−55 to
150

260 °C

°C/W
Watts
Amps
Amps

°C/W
Watts
Amps
Amps

°C/W
Watts
Amps
Amps

°C

R

R

R

DSS

P
I

I

DM

P
I

I

DM

P
I

I

DM

T

GS



D



D



D

JA
d

JA
d

JA
d

L

TSOP−6

CASE 318G

Style 1

3

4

443 = Device Code
W = Work Week

PIN ASSIGNMENT

Source

DrainDrain

56

4

321

GateDrain

Drain

MARKING
DIAGRAM

443

W

 Semiconductor Components Industries, LLC, 2003

December, 2003 − Rev. 2

ORDERING INFORMATION

Device Package Shipping

NTGS3443T1 TSOP−6 3000 Tape & Reel
NTGS3443T1G TSOP−6 3000 Tape & Reel
†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1 Publication Order Number:

NTGS3443T1/D

†

NTGS3443T1

)

f = 1.0 MHz)

(

(V

DD

−20 Vdc, I

D

Adc

)

I

D

Adc)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Notes 4 & 5)

A

Characteristic

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage
(V

= 0 Vdc, ID = −10 A)

GS

Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C)
(V

= 0 Vdc, VDS = −20 Vdc, TJ = 70°C)

GS

Gate−Body Leakage Current
(VGS = −12 Vdc, VDS = 0 Vdc)

Gate−Body Leakage Current
(VGS = +12 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS

Gate Threshold Voltage
(V

= VGS, ID = −250 Adc)

DS

Static Drain−Source On−State Resistance
(V

= −4.5 Vdc, ID = −4.4 Adc)

GS

= −2.7 Vdc, ID = −3.7 Adc)

(V

GS

(V

= −2.5 Vdc, ID = −3.5 Adc)

GS

Forward Transconductance
(VDS = −10 Vdc, ID = −4.4 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

(VDS = −5.0 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn−On Delay Time
Rise Time
Turn−Off Delay Time

V

= −20 Vdc, I

=

= −1.0 Adc,

= −1.0

VGS = −4.5 Vdc, Rg = 6.0 )

,

Fall Time t
Total Gate Charge Q
Gate−Source Charge

(VDS = −10 Vdc, VGS = −4.5 Vdc,

= −4.4

I

= −4.4 Adc

Gate−Drain Charge

BODY−DRAIN DIODE RATINGS

Diode Forward On−Voltage

(IS = −1.7 Adc, VGS = 0 Vdc) V

Reverse Recovery Time (IS = −1.7 Adc, dIS/dt = 100 A/s) t

4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%.

5. Handling precautions to protect against electrostatic discharge is mandatory.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

I

GSS

V

GS(th)

R

DS(on)

g

C
C
C

t

d(on)

t

d(off)

Q

Q

FS

iss
oss
rss

t

r

f

tot

gs

gd

SD

rr

−20 − −

−

−

−

−

−1.0

−5.0

− − −100

− − 100

−0.60 −0.95 −1.50

−

−

−

0.058

0.082

0.092

0.065

0.090

0.100

− 8.8 −

− 565 − pF

− 320 − pF

− 120 − pF

− 10 25 ns

− 18 45 ns

− 30 50 ns

− 31 50 ns

− 7.5 15 nC

− 1.4 − nC

− 2.9 − nC

− −0.83 −1.2 Vdc

− 30 − ns

Vdc

Adc

nAdc

nAdc

Vdc

mhos



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2

NTGS3443T1

TYPICAL ELECTRICAL CHARACTERISTICS

8

VGS = −5 V

6

4

2

DRAIN CURRENT (AMPS)

D,

−I
0

0

−V

DS,

VGS = −3.5 V

0.4
DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.4

0.35

0.3

0.25

0.2

0.15

0.1

0.05

DRAIN−TO−SOURCE RESISTANCE (OHMS)

0

DS(on),

R

1.5

2 4 4.5 5

GATE−TO−SOURCE VOLTAGE (VOLTS)

−V

GS,

Figure 3. On−Resistance vs. Gate−to−Source

VGS = −3 V

VGS = −4.5 V

VGS = −4 V

Voltage

VGS = −2.5 V

VGS = −2 V

VGS = −1.5 V

3.532.5

TJ = 25°C

1.6

ID = −4.4 A
T

= 25°C

J

8

VDS≥ = −10 V

6

4

2

DRAIN CURRENT (AMPS)

D,

−I

21.20.8

0

0.6 2.2 2.61.81.4 31

−V

0.16
TJ = 25°C

0.14

0.12

0.1

0.08

0.06

DRAIN−TO−SOURCE RESISTANCE (OHMS)

0.04

04532617

DS(on),

R

Figure 4. On−Resistance vs. Drain Current and

TJ = 25°C

TJ = 125°C

TJ = −55°C

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

VGS = −2.5 V

VGS = −2.7 V

VGS = −4.5 V

DRAIN CURRENT (AMPS)

−I

D,

Gate Voltage

8

1.5

1.4

ID = −4.4 A
V

= −4.5 V

GS

1.3

1.2

1.1

1

0.9

0.8

0.7

−50 50250−25 75 125100

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on),

R

, JUNCTION TEMPERATURE (°C)

T

J

Figure 5. On−Resistance Variation with

Temperature

100

10

1

LEAKAGE (nA)

DSS,

0.1

−I

0.01

150

016201284

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3

TJ = 125°C

TJ = 100°C

TJ = 25°C

VGS = 0 V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V

DS,

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

NTGS3443T1

TYPICAL ELECTRICAL CHARACTERISTICS

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

0

0

214201816

−V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

1.3

1.2

1.1

1

0.9

(NORMALIZED)

0.8

GATE THRESHOLD VOLTAGE

0.7

GS(th),

V

0.6

−50 50

0 100

TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Gate Threshold Voltage Variation

TJ = 25°C
V

GS

C

iss

C

oss

C

rss

106412

8

ID = −250 A

25−25 75 125

with Temperature

= 0 V

GATE−TO−SOURCE

GS,

−V

150

5

4

3

Q1 Q2

QT

V

GS

2

VOLTAGE (VOLTS)

1

0

1

045326

Q

TOTAL GATE CHARGE (nC)

g,

TJ = 25°C
I

= −4.4 A

D

78

Drain−to−Source Voltage vs. Total Charge

4

3

2

1

SOURCE CURRENT (AMPS)

S,

−I
0

0.3 0.7 0.80.60.5 0.90.4 1

V

= 0 V

GS

TJ = 150°C

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−V

SD

TJ = 25°C

Figure 10. Diode Forward Voltage vs. Current

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4

1

Duty Cycle = 0.5

NTGS3443T1

TYPICAL ELECTRICAL CHARACTERISTICS

20

16

12

8

POWER (W)

4

0

0.01 1.000.10 10.00
TIME (sec)

Figure 11. Single Pulse Power

100.00

0.2

0.1

0.1

0.05

THERMAL IMPEDANCE

0.01

NORMALIZED EFFECTIVE TRANSIENT

0.02

0.01

1E−04 1E+00

1E−03

Single Pulse

SQUARE WAVE PULSE DURATION (sec)

Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient

1E+011E−011E−02

1E+02 1E+03

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5

NTGS3443T1

PACKAGE DIMENSIONS

TSOP−6

CASE 318G−02

ISSUE K

A

L

456

S

1

23

B

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.

0.05 (0.002)

D

G

M

C

H

K

J

SOLDERING FOOTPRINT*

DIM MIN MAX MIN MAX

A 0.1142 0.12202.90 3.10
B 0.0512 0.06691.30 1.70
C 0.0354 0.04330.90 1.10
D 0.0098 0.01970.25 0.50
G 0.0335 0.04130.85 1.05
H 0.0005 0.00400.013 0.100

J 0.0040 0.01020.10 0.26

K 0.0079 0.02360.20 0.60

L 0.0493 0.06101.25 1.55

M 0 10 0 10

____

S 0.0985 0.11812.50 3.00

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

INCHESMILLIMETERS

2.4

0.094

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

0.039

mm



SCALE 10:1

inches



Figure 13. TSOP−6

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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NTGS3443T1/D