ON Semiconductor NTGS3443T1 Technical data

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NTGS3443T1

Power MOSFET
2 Amps, 20 Volts

P−Channel TSOP−6

Features

• Ultra Low R

• Higher Efficiency Extending Battery Life

• Miniature TSOP6 Surface Mount Package

• Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

Applications

• Power Management in Portable and Battery−Powered Products, i.e.:

Cellular and Cordless T elephones, and PCMCIA Cards

DS(on)

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2 AMPERES

20 VOLTS

R

DS(on)

= 65 m

P−Channel

1256

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Thermal Resistance

Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
Drain Current − Continuous @ T

− Pulsed Drain Current (T

Thermal Resistance

Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
Drain Current − Continuous @ T

− Pulsed Drain Current (T

Thermal Resistance

Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
Drain Current − Continuous @ T

− Pulsed Drain Current (T

Operating and Storage Temperature Range TJ, T

Maximum Lead Temperature for Soldering

Purposes for 10 Seconds

1. Minimum FR−4 or G−10PCB, operating to steady state.

2. Mounted onto a 2 in square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), operating to steady state.

3. Mounted onto a 2 in square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), t  5.0 seconds.

= 25°C unless otherwise noted)

J

Rating

= 25°C

A

= 25°C

A

 10 S)

p

= 25°C

A

= 25°C

A

 10 S)

p

= 25°C

A

= 25°C

A

 10 S)

p

Symbol Value Unit

stg

−20 Volts

12 Volts

244

0.5

−2.2

−10

128

1.0

−3.1

−14

62.5

2.0

−4.4

−20

−55 to
150

260 °C

°C/W
Watts
Amps
Amps

°C/W
Watts
Amps
Amps

°C/W
Watts
Amps
Amps

°C

R

R

R

DSS

P
I

I

DM

P
I

I

DM

P
I

I

DM

T

GS



D



D



D

JA
d

JA
d

JA
d

L

TSOP−6

CASE 318G

Style 1

3

4

443 = Device Code
W = Work Week

PIN ASSIGNMENT

Source

DrainDrain

56

4

321

GateDrain

Drain

MARKING
DIAGRAM

443

W

 Semiconductor Components Industries, LLC, 2003

December, 2003 − Rev. 2

ORDERING INFORMATION

Device Package Shipping

NTGS3443T1 TSOP−6 3000 Tape & Reel
NTGS3443T1G TSOP−6 3000 Tape & Reel
†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1 Publication Order Number:

NTGS3443T1/D

†

NTGS3443T1

)

f = 1.0 MHz)

(

(V

DD

−20 Vdc, I

D

Adc

)

I

D

Adc)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Notes 4 & 5)

A

Characteristic

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage
(V

= 0 Vdc, ID = −10 A)

GS

Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C)
(V

= 0 Vdc, VDS = −20 Vdc, TJ = 70°C)

GS

Gate−Body Leakage Current
(VGS = −12 Vdc, VDS = 0 Vdc)

Gate−Body Leakage Current
(VGS = +12 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS

Gate Threshold Voltage
(V

= VGS, ID = −250 Adc)

DS

Static Drain−Source On−State Resistance
(V

= −4.5 Vdc, ID = −4.4 Adc)

GS

= −2.7 Vdc, ID = −3.7 Adc)

(V

GS

(V

= −2.5 Vdc, ID = −3.5 Adc)

GS

Forward Transconductance
(VDS = −10 Vdc, ID = −4.4 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

(VDS = −5.0 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn−On Delay Time
Rise Time
Turn−Off Delay Time

V

= −20 Vdc, I

=

= −1.0 Adc,

= −1.0

VGS = −4.5 Vdc, Rg = 6.0 )

,

Fall Time t
Total Gate Charge Q
Gate−Source Charge

(VDS = −10 Vdc, VGS = −4.5 Vdc,

= −4.4

I

= −4.4 Adc

Gate−Drain Charge

BODY−DRAIN DIODE RATINGS

Diode Forward On−Voltage

(IS = −1.7 Adc, VGS = 0 Vdc) V

Reverse Recovery Time (IS = −1.7 Adc, dIS/dt = 100 A/s) t

4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%.

5. Handling precautions to protect against electrostatic discharge is mandatory.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

I

GSS

V

GS(th)

R

DS(on)

g

C
C
C

t

d(on)

t

d(off)

Q

Q

FS

iss
oss
rss

t

r

f

tot

gs

gd

SD

rr

−20 − −

−

−

−

−

−1.0

−5.0

− − −100

− − 100

−0.60 −0.95 −1.50

−

−

−

0.058

0.082

0.092

0.065

0.090

0.100

− 8.8 −

− 565 − pF

− 320 − pF

− 120 − pF

− 10 25 ns

− 18 45 ns

− 30 50 ns

− 31 50 ns

− 7.5 15 nC

− 1.4 − nC

− 2.9 − nC

− −0.83 −1.2 Vdc

− 30 − ns

Vdc

Adc

nAdc

nAdc

Vdc

mhos



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2

NTGS3443T1

TYPICAL ELECTRICAL CHARACTERISTICS

8

VGS = −5 V

6

4

2

DRAIN CURRENT (AMPS)

D,

−I
0

0

−V

DS,

VGS = −3.5 V

0.4
DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.4

0.35

0.3

0.25

0.2

0.15

0.1

0.05

DRAIN−TO−SOURCE RESISTANCE (OHMS)

0

DS(on),

R

1.5

2 4 4.5 5

GATE−TO−SOURCE VOLTAGE (VOLTS)

−V

GS,

Figure 3. On−Resistance vs. Gate−to−Source

VGS = −3 V

VGS = −4.5 V

VGS = −4 V

Voltage

VGS = −2.5 V

VGS = −2 V

VGS = −1.5 V

3.532.5

TJ = 25°C

1.6

ID = −4.4 A
T

= 25°C

J

8

VDS≥ = −10 V

6

4

2

DRAIN CURRENT (AMPS)

D,

−I

21.20.8

0

0.6 2.2 2.61.81.4 31

−V

0.16
TJ = 25°C

0.14

0.12

0.1

0.08

0.06

DRAIN−TO−SOURCE RESISTANCE (OHMS)

0.04

04532617

DS(on),

R

Figure 4. On−Resistance vs. Drain Current and

TJ = 25°C

TJ = 125°C

TJ = −55°C

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

VGS = −2.5 V

VGS = −2.7 V

VGS = −4.5 V

DRAIN CURRENT (AMPS)

−I

D,

Gate Voltage

8

1.5

1.4

ID = −4.4 A
V

= −4.5 V

GS

1.3

1.2

1.1

1

0.9

0.8

0.7

−50 50250−25 75 125100

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on),

R

, JUNCTION TEMPERATURE (°C)

T

J

Figure 5. On−Resistance Variation with

Temperature

100

10

1

LEAKAGE (nA)

DSS,

0.1

−I

0.01

150

016201284

http://onsemi.com

3

TJ = 125°C

TJ = 100°C

TJ = 25°C

VGS = 0 V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V

DS,

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

NTGS3443T1

TYPICAL ELECTRICAL CHARACTERISTICS

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

0

0

214201816

−V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

1.3

1.2

1.1

1

0.9

(NORMALIZED)

0.8

GATE THRESHOLD VOLTAGE

0.7

GS(th),

V

0.6

−50 50

0 100

TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Gate Threshold Voltage Variation

TJ = 25°C
V

GS

C

iss

C

oss

C

rss

106412

8

ID = −250 A

25−25 75 125

with Temperature

= 0 V

GATE−TO−SOURCE

GS,

−V

150

5

4

3

Q1 Q2

QT

V

GS

2

VOLTAGE (VOLTS)

1

0

1

045326

Q

TOTAL GATE CHARGE (nC)

g,

TJ = 25°C
I

= −4.4 A

D

78

Drain−to−Source Voltage vs. Total Charge

4

3

2

1

SOURCE CURRENT (AMPS)

S,

−I
0

0.3 0.7 0.80.60.5 0.90.4 1

V

= 0 V

GS

TJ = 150°C

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−V

SD

TJ = 25°C

Figure 10. Diode Forward Voltage vs. Current

http://onsemi.com

4

1

Duty Cycle = 0.5

NTGS3443T1

TYPICAL ELECTRICAL CHARACTERISTICS

20

16

12

8

POWER (W)

4

0

0.01 1.000.10 10.00
TIME (sec)

Figure 11. Single Pulse Power

100.00

0.2

0.1

0.1

0.05

THERMAL IMPEDANCE

0.01

NORMALIZED EFFECTIVE TRANSIENT

0.02

0.01

1E−04 1E+00

1E−03

Single Pulse

SQUARE WAVE PULSE DURATION (sec)

Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient

1E+011E−011E−02

1E+02 1E+03

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5

NTGS3443T1

PACKAGE DIMENSIONS

TSOP−6

CASE 318G−02

ISSUE K

A

L

456

S

1

23

B

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.

0.05 (0.002)

D

G

M

C

H

K

J

SOLDERING FOOTPRINT*

DIM MIN MAX MIN MAX

A 0.1142 0.12202.90 3.10
B 0.0512 0.06691.30 1.70
C 0.0354 0.04330.90 1.10
D 0.0098 0.01970.25 0.50
G 0.0335 0.04130.85 1.05
H 0.0005 0.00400.013 0.100

J 0.0040 0.01020.10 0.26

K 0.0079 0.02360.20 0.60

L 0.0493 0.06101.25 1.55

M 0 10 0 10

____

S 0.0985 0.11812.50 3.00

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

INCHESMILLIMETERS

2.4

0.094

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

0.039

mm



SCALE 10:1

inches



Figure 13. TSOP−6

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTGS3443T1/D