ON Semiconductor NTGS3443B User Manual
NTGS3443B
MOSFET – Power, Single,
P-Channel, TSOP-6
-20 V, -4.2 A
Features
• Low R
in TSOP−6 Package
DS(on)
• 2.5 V Gate Rating
• Fast Switching
• This is a Pb−Free Device
Applications
• Optimized for Battery and Load Management Applications in
Portable Equipment
• Li Ion Battery Linear Mode Charging
• High Side Load Switch
• HDD Switching Circuits, Camera Phone, etc.
MAXIMUM RATINGS (T
Parameter Symbol Value Unit
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature TJ,
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size.
(Cu area = 1.127 in sq [2 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
(Cu area = 0.0775 in sq)
= 25°C unless otherwise stated)
J
D
D
L
−20 V
$12 V
−3.7
1.25
−2.7
0.7 W
−15 A
−55 to
150
260 °C
DSS
GS
T
I
P
I
P
I
DM
STG
T
D
D
Steady
State
t v 5 s TA = 25°C −4.2
Steady
State
t v 5 s 1.6
Steady
State
tp = 10 ms
TA = 25°C
TA = 85°C −2.7
TA = 25°C
TA = 25°C
TA = 85°C −2.0
TA = 25°C
A
W
A
°C
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V
(BR)DSS
−20 V
R
MAX ID MAX
DS(ON)
60 mW @ −4.5 V
90 mW @ −2.7 V
100 mW @ −2.5 V
P−Channel
1256
3
4
−3.7 A
−3.1 A
−3.0 A
MARKING
DIAGRAM
TSOP−6
CASE 318G
1
SB = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
STYLE 1
SB MG
G
1
PIN ASSIGNMENT
DrainDrain
Source
56
4
321
Drain
GateDrain
ORDERING INFORMATION
Device Package Shipping
NTGS3443BT1G TSOP−6
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3000 / Tape & Reel
†
© Semiconductor Components Industries, LLC, 2007
May, 2019 − Rev. 0
1 Publication Order Number:
NTGS3443B/D
NTGS3443B
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t v 5 s (Note 3)
Junction−to−Ambient – Steady State (Note 4)
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
R
q
JA
R
q
JA
R
q
JA
100
80
190
°C/W
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
V
(BR)DSS
V
(BR)DSS/TJ
DSS
GSS
VGS = 0 V, ID = −250 mA
ID = −250 mA, Reference 25°C
VGS = 0 V,
V
= −20 V
DS
VDS = 0 V, VGS = ±12 V $0.1
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
Negative Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = −250 mA
VGS = −4.5 V, ID = −3.7 A
VGS = −2.7 V, ID = −3.1 A
VGS = −2.5 V, ID = −3.0 A
Forward Transconductance g
FS
VDS = −10 V, ID =−3.7 A 7.0 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Gate Resistance R
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
G
VGS = 0 V, f = 1 MHz, VDS = −10 V
VGS = −4.5 V, VDS = −10 V;
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
t
d(ON)
r
d(OFF)
f
VGS = −4.5 V, VDD = −10 V,
= −1.0 A, RG = 6.0 W
I
D
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
Reverse Recovery Time t
SD
RR
VGS = 0 V,
I
= −1.7 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
I
= −3.7 A
D
I
= −1.7 A
S
−20 V
−15 mV/°C
TJ = 25°C −1.0
TJ = 70°C −5.0
−0.6 −1.4 V
3.3 mV/°C
45 60
mW
65 90
70 100
819
157
103
8.0 11
0.6
1.7
2.4
11
10 15
7.0 11
47 70
25 40
TJ = 25°C −0.8 −1.2 V
15 30 ns
mA
mA
pF
nC
W
ns
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2
NTGS3443B
20
−4.5 V
−3.5 V
16
12
8
DRAIN CURRENT (AMPS)
4
D,
−I
0
0
1
−V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On−Region Characteristics
0.20
0.16
0.12
0.08
0.04
DRAIN−TO−SOURCE RESISTANCE (W)
0.00
1.5 3
DS(on),
R
1
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
2 3.5
Figure 3. On−Resistance vs. Gate−to−Source
TYPICAL PERFORMANCE CURVES (T
TJ = 25°C
−4 V
2.5 4
Voltage
−3 V
−2.5 V
−2 V
−1.5 V
4
ID = −3.7 A
= 25°C
T
J
4.5
DRAIN CURRENT (AMPS)
D,
−I
532
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
DRAIN−TO−SOURCE RESISTANCE (W)
0.02
0.00
5
DS(on),
R
= 25°C unless otherwise noted)
J
20
VDS = −5 V
18
16
14
12
10
8
6
4
2
0
0.5
TJ = 25°C
TJ = 125°C
TJ = −55°C
1.51
2 2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
TJ = 25°C
VGS = −2.5 V
VGS = −2.7 V
VGS = −4.5 V
0201612
84
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
3
1.5
ID = −3.7 A
1.4
V
GS
= −4.5 V
1.3
1.2
1.1
1.0
DRAIN−TO−SOURCE
0.9
DS(on),
R
RESISTANCE (NORMALIZED)
0.8
0.7
−50 0−25 25
Figure 5. On−Resistance Variation with
75 150
50 125100
TJ, JUNCTION TEMPERATURE (°C)
Temperature
1200
1000
800
600
400
C, CAPACITANCE (pF)
200
0
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3
C
iss
C
oss
C
rss
482010
6
−V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
12 14 16 18
Figure 6. Capacitance Variation
VGS = 0 V
= 25°C
T
J
f = 1 MHz
20
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