ON Semiconductor NTGS3443B User Manual

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Page 1

NTGS3443B

MOSFET – Power, Single,

P-Channel, TSOP-6

-20 V, -4.2 A

Features

• Low R

in TSOP−6 Package

DS(on)

• 2.5 V Gate Rating

• Fast Switching

• This is a Pb−Free Device

Applications

• Optimized for Battery and Load Management Applications in

Portable Equipment

• Li Ion Battery Linear Mode Charging

• High Side Load Switch

• HDD Switching Circuits, Camera Phone, etc.

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size. (Cu area = 1.127 in sq [2 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 0.0775 in sq)

= 25°C unless otherwise stated)

−20 V

$12 V

−3.7

1.25

−2.7

0.7 W

−15 A

−55 to

150

260 °C

DSS

STG

Steady

State

t v 5 s TA = 25°C −4.2

Steady

State

t v 5 s 1.6

Steady

State

tp = 10 ms

TA = 25°C

TA = 85°C −2.7

TA = 25°C

TA = 85°C −2.0

TA = 25°C

°C

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(BR)DSS

−20 V

MAX ID MAX

DS(ON)

60 mW @ −4.5 V

90 mW @ −2.7 V

100 mW @ −2.5 V

P−Channel

1256

−3.7 A

−3.1 A

−3.0 A

MARKING DIAGRAM

TSOP−6

CASE 318G

SB = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)

STYLE 1

SB MG

PIN ASSIGNMENT

DrainDrain

Source

321

Drain

GateDrain

ORDERING INFORMATION

Device Package Shipping

NTGS3443BT1G TSOP−6

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

3000 / Tape & Reel

†

May, 2019 − Rev. 0

1 Publication Order Number:

NTGS3443B/D

Page 2

NTGS3443B

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – t v 5 s (Note 3)

Junction−to−Ambient – Steady State (Note 4)

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).

100

190

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = −250 mA

ID = −250 mA, Reference 25°C

VGS = 0 V,

= −20 V

VDS = 0 V, VGS = ±12 V $0.1

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = −250 mA

VGS = −4.5 V, ID = −3.7 A

VGS = −2.7 V, ID = −3.1 A

VGS = −2.5 V, ID = −3.0 A

Forward Transconductance g

VDS = −10 V, ID =−3.7 A 7.0 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Gate Resistance R

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz, VDS = −10 V

VGS = −4.5 V, VDS = −10 V;

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = −4.5 V, VDD = −10 V,

= −1.0 A, RG = 6.0 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

VGS = 0 V, I

= −1.7 A

VGS = 0 V, dIS/dt = 100 A/ms,

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

= −3.7 A

= −1.7 A

−20 V

−15 mV/°C

TJ = 25°C −1.0

TJ = 70°C −5.0

−0.6 −1.4 V

3.3 mV/°C

45 60

65 90

70 100

819

157

103

8.0 11

0.6

1.7

2.4

10 15

7.0 11

47 70

25 40

TJ = 25°C −0.8 −1.2 V

15 30 ns

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NTGS3443B

−4.5 V

−3.5 V

DRAIN CURRENT (AMPS)

−I

−V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.20

0.16

0.12

0.08

0.04

DRAIN−TO−SOURCE RESISTANCE (W)

0.00

1.5 3

DS(on),

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

2 3.5

Figure 3. On−Resistance vs. Gate−to−Source

TYPICAL PERFORMANCE CURVES (T

TJ = 25°C

−4 V

2.5 4

Voltage

−3 V

−2.5 V

−2 V

−1.5 V

ID = −3.7 A

= 25°C

4.5

DRAIN CURRENT (AMPS)

−I

532

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

DRAIN−TO−SOURCE RESISTANCE (W)

0.02

0.00

DS(on),

= 25°C unless otherwise noted)

VDS = −5 V

0.5

TJ = 25°C

TJ = 125°C

TJ = −55°C

1.51

2 2.5

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

VGS = −2.5 V

VGS = −2.7 V

VGS = −4.5 V

0201612

−ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1.5

ID = −3.7 A

1.4 V

= −4.5 V

1.3

1.2

1.1

1.0

DRAIN−TO−SOURCE

0.9

DS(on),

RESISTANCE (NORMALIZED)

0.8

0.7

−50 0−25 25

Figure 5. On−Resistance Variation with

75 150

50 125100

TJ, JUNCTION TEMPERATURE (°C)

Temperature

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

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iss

oss

rss

482010

−V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

12 14 16 18

Figure 6. Capacitance Variation

VGS = 0 V

= 25°C

f = 1 MHz

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NTGS3443B

, GATE-TO-SOURCE VOLTAGE (VOLTS)

-V

(V)

GS(th)

−V

TYPICAL PERFORMANCE CURVES (T

-V

, TOTAL GATE CHARGE (nC)

Figure 7. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

1.4

1.2

1.0

0.8

0.6

0.4

-V

VDS = −10 V

= −3.7 A

= 25°C

ID = −250 mA

= 25°C unless otherwise noted)

-V

VGS = 0 V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

TJ = 150°C

, SOURCE CURRENT (AMPS)

−I

1.0

0.0

0.2 0.6 1.0

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−V

TJ = 25°C

0.80.4

1.2

1.4

Figure 8. Diode Forward Voltage vs. Current

POWER (WATTS)

0.2

0.0

−50 0−25 25

, JUNCTION TEMPERATURE (°C)

Figure 9. Threshold Voltage

50 125100

75 150

0.001

Figure 10. Single Pulse Maximum Power

100

100 ms

1 ms

10 ms

VGS = −12 V SINGLE PULSE T

= 25°C

0.1

0.01

LIMIT

DS(on)

Thermal Limit Package Limit

, DRAIN CURRENT (A)

−I

0.1 1 10 100

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.1

1 100

100.01

SINGLE PULSE TIME (s)

Dissipation

1000

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Page 5

Duty Cycle = 0.5

0.2

NTGS3443B

0.1

(pk)

0.05

Test Type = 1 sq in 2 oz

0.02

0.01

RESPONSE NORMALIZED (°C/W)

0.01

R(t), EFFECTIVE TRANSIENT THERMAL

0.0001 0.001 0.01 0.1 1 10 100 100

Single Pulse

DUTY CYCLE, D = t1/t

= 1 sq in 2 oz

PULSE TIME (s)

Figure 12. FET Thermal Response

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Page 6

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 2:1

456

NOTE 5

0.05

DETAIL Z

CASE 318G−02

DETAIL Z

TSOP−6

ISSUE V

GAUGE PLANE

SEATING

PLANE

DATE 12 JUN 2012

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H.

5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.

DIMAMIN NOM MAX

A1 0.01 0.06 0.10

b 0.25 0.38 0.50 c 0.10 0.18 0.26 D 2.90 3.00 3.10 E 2.50 2.75 3.00

e 0.85 0.95 1.05 L 0.20 0.40 0.60

MILLIMETERS

0.90 1.00 1.10

1.30 1.50 1.70

0.25 BSC

0° 10°

−

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

STYLE 7:

PIN 1. COLLECTOR

2. COLLECTOR

3. BASE

4. N/C

5. COLLECTOR

6. EMITTER

STYLE 13:

PIN 1. GATE 1

2. SOURCE 2

3. GATE 2

4. DRAIN 2

5. SOURCE 1

6. DRAIN 1

STYLE 2:

PIN 1. EMITTER 2

2. BASE 1

3. COLLECTOR 1

4. EMITTER 1

5. BASE 2

6. COLLECTOR 2

STYLE 8:

PIN 1. Vbus

2. D(in)

3. D(in)+

4. D(out)+

5. D(out)

6. GND

STYLE 14:

PIN 1. ANODE

2. SOURCE

3. GATE

4. CATHODE/DRAIN

5. CATHODE/DRAIN

6. CATHODE/DRAIN

STYLE 3:

PIN 1. ENABLE

2. N/C

3. R BOOST

4. Vz

5. V in

6. V out

STYLE 9:

PIN 1. LOW VOLTAGE GATE

2. DRAIN

3. SOURCE

4. DRAIN

5. DRAIN

6. HIGH VOLTAGE GATE

STYLE 15:

PIN 1. ANODE

2. SOURCE

3. GATE

4. DRAIN

5. N/C

6. CATHODE

RECOMMENDED

SOLDERING FOOTPRINT*

0.60

3.20

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

98ASB14888C

TSOP−6

0.95

0.95 PITCH

STYLE 4:

PIN 1. N/C

2. V in

3. NOT USED

4. GROUND

5. ENABLE

6. LOAD

STYLE 10:

PIN 1. D(OUT)+

2. GND

3. D(OUT)−

4. D(IN)−

5. VBUS

6. D(IN)+

STYLE 16:

PIN 1. ANODE/CATHODE

2. BASE

3. EMITTER

4. COLLECTOR

5. ANODE

6. CATHODE

STYLE 5:

PIN 1. EMITTER 2

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

STYLE 11:

PIN 1. SOURCE 1

2. DRAIN 2

3. DRAIN 2

4. SOURCE 2

5. GATE 1

6. DRAIN 1/GATE 2

STYLE 17:

PIN 1. EMITTER

2. BASE

3. ANODE/CATHODE

4. ANODE

5. CATHODE

6. COLLECTOR

STYLE 6:

PIN 1. COLLECTOR

2. COLLECTOR

3. BASE

4. EMITTER

5. COLLECTOR

6. COLLECTOR

STYLE 12:

PIN 1. I/O

2. GROUND

3. I/O

4. I/O

5. VCC

6. I/O

GENERIC

MARKING DIAGRAM*

XXXAYWG

XXX = Specific Device Code A =Assembly Location Y = Year

XXX = Specific Device Code M = Date Code

G = Pb−Free Package W = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet

for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

XXX MG

STANDARDIC

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ON Semiconductor NTGS3443B User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual