ON Semiconductor NTA4151P, NTE4151P User Manual

NTA4151P, NTE4151P

MOSFET – Single,

P-Channel, Small Signal,
Gate Zener, SC-75, SC-89

-20 V, -760 mA

Features

• Low R

• Small Outline Package (1.6 x 1.6 mm)

• SC−75 Standard Gullwing Package

• ESD Protected Gate

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• High Side Load Switch

• DC−DC Conversion

• Small Drive Circuits

• Battery Operated Systems such as Cell Phones, PDAs, Digital

Cameras, etc.

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current
(Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Continuous Source Current (Body Diode) I

Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)

Gate−to−Source ESD Rating −

THERMAL RESISTANCE RATINGS

Junction−to−Ambient − Steady State (Note 1)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).

for Higher Efficiency and Longer Battery Life

DS(on)

= 25°C unless otherwise stated)

J

Parameter Symbol Value Units

DSS

GS

Steady State I

SC−75
SC−89

(Human Body Model, Method 3015)

Steady State

tp =10 ms

SC−75
SC−89

D

P

D

I

DM

T

STG

S

T

L

ESD 1800 V

R

q

JA

−20 V

±6.0 V

−760 mA

301
313

±1000 mA

−55 to
150

−250 mA

260 °C

415
400

mW

°C

°C/W

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R

TYP ID MAXV

(BR)DSS

−20 V

G

DS(on)

0.26 W @ −4.5 V

0.35 W @ −2.5 V

0.49 W @ −1.8 V

P−Channel MOSFET

D

S

−760 mA

MARKING DIAGRAM

& PIN ASSIGNMENT

3

2

SC−75 / SOT−416

*Date Code orientation may vary depending up-

1

CASE 463

STYLE 5

3

2

1

SC−89

CASE 463C

xx = Device Code
M = Date Code*
G = Pb−Free Package

(Note: Microdot may be in either location)

on manufacturing location.

1

Gate

3

Drain

xx M G

G

2

Source

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2014

May, 2019 − Rev. 8

1 Publication Order Number:

NTA4151P/D

NTA4151P, NTE4151P

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise stated)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

V

V

V

GS

GS

DS

= 0 V, I

= 0 V, V

= 0 V, V

= −250 mA

D

= −16 V −1.0 −100 nA

DS

= ±4.5 V $1.0 $10

GS

−20 V

mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

V

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

V

= VGS, ID = −250 mA

DS

V

= −4.5 V, I

GS

V

= −2.5 V, I

GS

V

= −1.8 V, I

GS

V

= −10 V, I

DS

= −350 mA 0.26 0.36 W

D

= −300 mA 0.35 0.45

D

= −150 mA 0.49 1.0

D

= −250 mA 0.4 S

D

−0.45 −1.2 V

CHARGES AND CAPACITANCES

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

= 0 V, f = 1.0 MHz,

GS

V

= −5.0 V

DS

V

= −4.5 V, VDD = −10 V,

GS

I

= −0.3 A

D

156

28

18

2.1

0.125

0.325

0.5

pF

nC

V

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time td

Rise Time t

Turn−Off Delay Time td

Fall Time t

(ON)

r

(OFF)

f

V

= −4.5 V, V

GS

= −200 mA, R

I

D

= −10 V,

DD

G

= 10 W

8.0

8.2

29

20.4

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

V

GS

= 0 V, I

= −250 mA −0.72 −1.1 V

S

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION

Device Marking Package Shipping

NTA4151PT1G TN SC−75

3000 / Tape & Reel

(Pb−Free)

NTE4151PT1G TM SC−89

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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2

NTA4151P, NTE4151P

R

DRAIN

TO

SOURCE

TYPICAL ELECTRICAL CHARACTERISTICS

0.7

0.6

−1.5 V

0.5

VGS = −1.75 V to −4.5 V

0.4

0.3

0.2

DRAIN CURRENT (AMPS)

D,

0.1

−I

0

0 0.5 1.0 1.5 2.0 2.5 3.0

−V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS

Figure 1. On−Region Characteristics

0.6

VGS = −4.5 V

0.5

0.4

0.3

0.2

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 25°C

−1.25 V

−1.0 V

0.6
VDS w −10 V

0.5

0.4

0.3

0.2

DRAIN CURRENT (AMPS)

0.1

D,

−I

0

0 0.4 0.8 1.2 1.6 2.0

TJ = 125°C

TJ = 25°C

TJ = −55°C

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.6
VGS = −2.5 V

0.5

0.4

0.3

0.2

TJ = 125°C

TJ = 25°C

TJ = −55°C

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

DS(on),

R

−ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Drain Current and

Temperature

1.6
ID = − 0.35 A

= −4.5 V

V

GS

1.4

−

1.2

−

1.0

0.8

DS(on),

RESISTANCE (NORMALIZED)

0.6

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

DS(on),

R

−I

DRAIN CURRENT (AMPS)

D,

Figure 4. On−Resistance vs. Drain Current and

Temperature

250

TJ = 25°C

200

C

ISS

150

100

C, CAPACITANCE (pF)

50

0

0 4 8 12 16 20

C

RSS

C

OSS

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Capacitance Variation

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