NSTB1002DXV5T1G,
l
l
l
l
NSTB1002DXV5T5G
Preferred Devices
Dual Common
Base−Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BR T (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSTB1002DXV5T1G
series, two complementary devices are housed in the SOT−553
package which is ideal for low power surface mount applications
where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch Tape and Reel
• These are Pb−Free Devices
MAXIMUM RATINGS (T
and Q2, − minus sign for Q1 (PNP) omitted)
Rating Symbo
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation TA = 25°C
Thermal Resistance −
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation TA = 25°C
Thermal Resistance −
Junction-to-Ambient
Junction and Storage Temperature TJ, T
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
= 25°C unless otherwise noted, common for Q
A
Value
Q1 Q2
CBO
CEO
Symbol Max Unit
P
Derate above 25°C
R
Symbo
P
Derate above 25°C
R
−40 50 Vdc
−40 50 Vdc
−200 100 mAdc
C
357 (Note 1)
D
2.9 (Note 1)mWmW/°C
350 (Note 1) °C/W
q
JA
Max Unit
500 (Note 1)
D
4.0 (Note 1)
250 (Note 1) °C/W
q
JA
− 55 to +150 °C
stg
1
Unit
mW
mW/°C
http://onsemi.com
312
R1
Q1
45
CASE 463B
R2
Q2
R1
5
1
SOT−553
MARKING DIAGRAM
5
U9 MG
G
1
U9 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
NSTB1002DXV5T1G SOT−553
(Pb−Free)
NSTB1002DXV5T5G SOT−553
(Pb−Free)
Preferred devices are recommended choices for future use
and best overall value.
4 mm pitch
4000/Tape & Ree
2 mm pitch
8000/Tape & Ree
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1 Publication Order Number:
NSTB1002DXV5/D
NSTB1002DXV5T1G, NSTB1002DXV5T5G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2) V
Collector−Base Breakdown Voltage V
Emitter−Base Breakdown Voltage V
Base Cutoff Current I
Collector Cutoff Current I
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
Collector−Emitter Saturation Voltage
V
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
Base−Emitter Saturation Voltage
V
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product f
Output Capacitance C
Input Capacitance C
Input Impedance
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Small−Signal Current Gain
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time (V
Rise Time (I
Storage Time (V
Fall Time (I
= −3.0 Vdc, V
CC
= −10 mAdc, I
C
= −3.0 Vdc, I
CC
= I
B1
= 0.5 Vdc) t
BE
= −1.0 mAdc) t
B1
= −10 mAdc) t
C
= −1.0 mAdc) t
B2
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current
(VCB = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0, IC = 5.0 mA)
I
CBO
I
CEO
I
EBO
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
(BR)CEO
(BR)CBO
(BR)EBO
BL
CEX
h
FE
CE(sat)
BE(sat)
T
obo
ibo
h
ie
h
re
h
fe
h
oe
−40 − Vdc
−40 − Vdc
−5.0 − Vdc
− −50 nAdc
− −50 nAdc
60
80
100
60
30
−
−
−0.65
−
−
−
300
−
−
−0.25
−0.4
−0.85
−0.95
250 − MHz
− 4.5 pF
− 10.0 pF
2.0 12
0.1 10 X 10
100 400 −
3.0 60
nF − 4.0 dB
d
r
s
f
− 35
− 35
− 225
− 75
− − 100 nAdc
− − 500 nAdc
− − 0.1 mAdc
−
Vdc
Vdc
kW
−4
mmhos
ns
ns
http://onsemi.com
2
NSTB1002DXV5T1G, NSTB1002DXV5T5G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector−Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
Output Voltage (on)
(VCC = 5.0 V, V
= 2.5 V, RL = 1.0 kW)
B
Output Voltage (off)
(VCC = 5.0 V, V
= 0.5 V, RL = 1.0 kW)
B
V
(BR)CBO
V
(BR)CEO
h
V
CE(SAT)
V
V
FE
OL
OH
50 − − Vdc
50 − − Vdc
80 140 −
− − 0.25 Vdc
− − 0.2 Vdc
4.9 − − Vdc
Input Resistor R1 33 47 61
Resistor Ratio R1/R2 0.8 1.0 1.2
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
250
kW
200
150
100
R
= 833°C/W
q
50
, POWER DISSIPATION (MILLIWATTS)
D
P
0
−50 0 50 100 150
JA
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://onsemi.com
3
NSTB1002DXV5T1G, NSTB1002DXV5T5G
TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR
2.0
1.0
0.7
0.5
0.3
0.2
FE
h , DC CURRENT GAIN (NORMALIZED)
0.1
0.1
0.2 0.3
TJ = +125°C
+25°C
−55 °C
0.5 2.0 3.0 10 50
1.00.7
IC, COLLECTOR CURRENT (mA)
30205.0 7.0
Figure 2. DC Current Gain
70
VCE = 1.0 V
100
200
http://onsemi.com
4
NSTB1002DXV5T1G, NSTB1002DXV5T5G
)
TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR
10
IC/IB = 10
1
0.1
, MAXIMUM COLLECTOR VOLTAGE (VOLTS
0.01
CE(sat)
0
V
20 40
IC, COLLECTOR CURRENT (mA)
Figure 3. V
1
0.8
0.6
CE(sat)
TA=−25°C
versus I
C
25°C
75°C
50
f = 1 MHz
IE = 0 mA
TA = 25°C
1000
TA=75°C
100
, DC CURRENT GAIN
FE
h
10
1 100
IC, COLLECTOR CURRENT (mA)
10
Figure 4. DC Current Gain
100
75°C
10
1
25°C
TA=−25°C
VCE = 10 V
25°C
−25°C
0.4
, CAPACITANCE (pF)
ob
C
0.2
0
010203040
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 5. Output Capacitance
100
VO = 0.2 V
10
1
, INPUT VOLTAGE (VOLTS)
in
V
0.1
010 203040 50
0.1
0.01
, COLLECTOR CURRENT (mA)
C
I
50
0.001
0246810
Figure 6. Output Current versus Input Voltage
TA=−25°C
IC, COLLECTOR CURRENT (mA)
VO = 5 V
Vin, INPUT VOLTAGE (VOLTS)
25°C
75°C
Figure 7. Input Voltage versus Output Current
http://onsemi.com
5
D
−X−
45
12 3
e
NSTB1002DXV5T1G, NSTB1002DXV5T5G
PACKAGE DIMENSIONS
SOT−553
XV5 SUFFIX
CASE 463B−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
DIMAMIN NOM MAX MIN
0.50 0.55 0.60 0.020
b 0.17 0.22 0.27 0.007
0.08 0.13 0.18
c
D 1.50 1.60 1.70 0.059
E 1.10 1.20 1.30 0.043
e 0.50 BSC
L 0.10 0.20 0.30 0.004
H
1.50 1.60 1.70 0.059 0.063 0.067
E
E
−Y−
b 5 PL
0.08 (0.003) X
M
A
L
H
E
c
Y
SOLDERING FOOTPRINT*
0.3
0.0118
MILLIMETERS
INCHES
NOM MAX
0.022 0.024
0.009 0.011
0.003 0.005 0.007
0.063 0.067
0.047 0.051
0.020 BSC
0.008 0.012
0.45
0.0177
1.0
1.35
0.0394
0.0531
0.5
0.5
0.0197
0.0197
mm
ǒ
SCALE 20:1
inches
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
6
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NSTB1002DXV5/D
Loading...