ON Semiconductor NSS40601CF8T1G User Manual
NSS40601CF8T1G
40 V, 8.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor's e2PowerEdge family of low V
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•This is a Pb-Free Device
MAXIMUM RATINGS (T
Rating
Collector‐Emitter Voltage V
Collector‐Base Voltage V
Emitter‐Base Voltage V
Collector Current - Continuous I
Collector Current - Peak I
Electrostatic Discharge ESD HBM Class 3B
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Lead #1
Junction and Storage
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ 100 mm
2. FR-4 @ 500 mm
= 25°C)
A
2
, 1 oz copper traces.
2
, 1 oz copper traces.
Symbol Max Unit
CEO
CBO
EBO
C
CM
PD (Note 1) 830
R
(Note 1)
q
JA
PD (Note 2) 1.4
R
(Note 2)
q
JA
R
(Note 2)
q
JL
TJ, T
stg
40 Vdc
40 Vdc
6.0 Vdc
6.0 Adc
8.0 A
MM Class C
6.7
150 °C/W
11.1WmW/°C
90 °C/W
15 °C/W
-55 to
+150
CE(sat)
mW
mW/°C
°C
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40 VOLTS, 8.0 AMPS
NPN LOW V
CE(sat)
EQUIVALENT R
4
BASE
1
MARKING DIAGRAM
VB = Specific Device Code
M = Month Code
G = Pb-Free Package
PIN CONNECTIONS
81
C
7
C
6
C
5
E
ORDERING INFORMATION
Device Package Shipping
NSS40601CF8T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
TRANSISTOR
DS(on)
COLLECTOR
1, 2, 3, 6, 7, 8
5
EMITTER
8
VB M
ChipFET
(Pb-Free)
CASE 1206A
G
2
3
4
ChipFET]
STYLE 4
C
C
C
B
31 mW
3000/
Tape & Reel
†
© Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 1
1 Publication Order Number:
NSS40601CF8/D
NSS40601CF8T1G
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
= 10 mAdc, IB = 0)
(I
C
Collector-Base Breakdown Voltage
(I
= 0.1 mAdc, IE = 0)
C
Emitter-Base Breakdown Voltage
(I
= 0.1 mAdc, IC = 0)
E
Collector Cutoff Current
(V
= 40 Vdc, IE = 0)
CB
Emitter Cutoff Current
(V
= 6.0 Vdc)
EB
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
40 - -
40 - -
6.0 - -
- - 0.1
- - 0.1
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
= 2.0 A, VCE = 2.0 V)
(I
C
(I
= 3.0 A, VCE = 2.0 V)
C
Collector-Emitter Saturation Voltage (Note 3)
(I
= 0.1 A, IB = 0.010 A)
C
= 1.0 A, IB = 0.100 A)
(I
C
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.020 A)
(I
= 3.0 A, IB = 0.030 A)
C
(I
= 4.0 A, IB = 0.400 A)
C
Base-Emitter Saturation Voltage (Note 3)
(I
= 1.0 A, IB = 0.01 A)
C
Base-Emitter Turn-on Voltage (Note 3)
(I
= 2.0 A, VCE = 2.0 V)
C
Cutoff Frequency
(I
= 100 mA, VCE = 5.0 V, f = 100 MHz)
C
h
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
200
200
200
200
200
-
-
-
-
-
-
-
-
395
-
-
0.008
0.031
0.060
0.075
0.100
0.090
-
-
-
-
-
0.010
0.075
0.075
0.110
0.150
0.135
- 0.760 0.900
- 0.720 0.900
f
T
140 - -
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo - - 1200 pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo - - 100 pF
SWITCHING CHARACTERISTICS
Delay (V
= 30 V, IC = 750 mA, IB1 = 15 mA) t
CC
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
d
r
s
f
- - 110 ns
- - 130 ns
- - 1400 ns
- - 130 ns
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Vdc
Vdc
Vdc
mAdc
mAdc
V
V
V
MHz
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2
NSS40601CF8T1G
0.25
IC/IB = 10
0.2
0.15
0.1
, COLLECTOR EMITTER
0.05
SATURATION VOLTAGE (V)
CE(sat)
V
0
0.001 0.01 0.1 1 10
I
, COLLECTOR CURRENT (A)
C
V
CE(sat)
25°C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
700
650
600
550
500
450
400
350
, DC CURRENT GAIN
300
FE
h
250
200
150
0.001 0.01 0.1 1 10
25°C (5 V)
25°C (2 V)
IC, COLLECTOR CURRENT (A)
150°C (5 V)
150°C (2 V)
-55 °C (5 V)
-55 °C (2 V)
= 150°C
-55 °C
0.45
IC/IB = 100
0.4
0.35
0.3
0.25
0.2
0.15
, COLLECTOR EMITTER
0.1
SATURATION VOLTAGE (V)
CE(sat)
V
0.05
0
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
V
CE(sat)
25°C
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 10
1.20
1.00
-55 °C
0.80
, BASE EMITTER
BE(sat)
V
25°C
0.60
0.40
SATURATION VOLTAGE (V)
150°C
0.20
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
= 150°C
-55 °C
Figure 3. DC Current Gain vs.
Collector Current
1.0
VCE = 2.0 V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
, BASE EMITTER TURN-ON VOLTAGE (V)
0.001 0.01 0.1 1 10
BE(on)
V
IC, COLLECTOR CURRENT (A)
-55 °C
25°C
150°C
Figure 5. Base Emitter Turn-On Voltage vs.
Collector Current
1.0
0.8
0.6
0.4
0.2
, COLLECTOR-EMITTER VOLTAGE (V)
CE
V
0.0
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3
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
100 mA
10 mA
0.01 0.1 1 10 100
IB, BASE CURRENT (mA)
IC = 500 mA
300 mA
Figure 6. Saturation Region
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