ON Semiconductor NSS40601CF8T1G User Manual

NSS40601CF8T1G

40 V, 8.0 A, Low V

CE(sat)

NPN Transistor

ON Semiconductor's e2PowerEdge family of low V

transistors are miniature surface mount devices featuring ultra low
saturation voltage (V

) and high current gain capability. These

CE(sat)

are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.

Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e

2

PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.

•This is a Pb-Free Device

MAXIMUM RATINGS (T

Rating

Collector‐Emitter Voltage V

Collector‐Base Voltage V

Emitter‐Base Voltage V

Collector Current - Continuous I

Collector Current - Peak I

Electrostatic Discharge ESD HBM Class 3B

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation, TA = 25°C
Derate above 25°C

Thermal Resistance,
Junction-to-Ambient

Total Device Dissipation, TA = 25°C
Derate above 25°C

Thermal Resistance,
Junction-to-Ambient

Thermal Resistance,
Junction-to-Lead #1

Junction and Storage
Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. FR-4 @ 100 mm

2. FR-4 @ 500 mm

= 25°C)

A

2

, 1 oz copper traces.

2

, 1 oz copper traces.

Symbol Max Unit

CEO

CBO

EBO

C

CM

PD (Note 1) 830

R

(Note 1)

q

JA

PD (Note 2) 1.4

R

(Note 2)

q

JA

R

(Note 2)

q

JL

TJ, T

stg

40 Vdc

40 Vdc

6.0 Vdc

6.0 Adc

8.0 A

MM Class C

6.7

150 °C/W

11.1WmW/°C

90 °C/W

15 °C/W

-55 to
+150

CE(sat)

mW

mW/°C

°C

http://onsemi.com

40 VOLTS, 8.0 AMPS

NPN LOW V

CE(sat)

EQUIVALENT R

4

BASE

1

MARKING DIAGRAM

VB = Specific Device Code
M = Month Code
G = Pb-Free Package

PIN CONNECTIONS

81

C

7

C

6

C

5

E

ORDERING INFORMATION

Device Package Shipping

NSS40601CF8T1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

TRANSISTOR

DS(on)

COLLECTOR
1, 2, 3, 6, 7, 8

5

EMITTER

8

VB M

ChipFET

(Pb-Free)

CASE 1206A

G

2

3

4

ChipFET]

STYLE 4

C

C

C

B

31 mW

3000/

Tape & Reel

†

© Semiconductor Components Industries, LLC, 2007

May, 2007 - Rev. 1

1 Publication Order Number:

NSS40601CF8/D

NSS40601CF8T1G

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

A

Symbol Min Typical Max Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

= 10 mAdc, IB = 0)

(I

C

Collector-Base Breakdown Voltage
(I

= 0.1 mAdc, IE = 0)

C

Emitter-Base Breakdown Voltage
(I

= 0.1 mAdc, IC = 0)

E

Collector Cutoff Current
(V

= 40 Vdc, IE = 0)

CB

Emitter Cutoff Current
(V

= 6.0 Vdc)

EB

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

40 - -

40 - -

6.0 - -

- - 0.1

- - 0.1

ON CHARACTERISTICS

DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)

= 2.0 A, VCE = 2.0 V)

(I

C

(I

= 3.0 A, VCE = 2.0 V)

C

Collector-Emitter Saturation Voltage (Note 3)
(I

= 0.1 A, IB = 0.010 A)

C

= 1.0 A, IB = 0.100 A)

(I

C

(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.020 A)
(I

= 3.0 A, IB = 0.030 A)

C

(I

= 4.0 A, IB = 0.400 A)

C

Base-Emitter Saturation Voltage (Note 3)
(I

= 1.0 A, IB = 0.01 A)

C

Base-Emitter Turn-on Voltage (Note 3)
(I

= 2.0 A, VCE = 2.0 V)

C

Cutoff Frequency
(I

= 100 mA, VCE = 5.0 V, f = 100 MHz)

C

h

V

CE(sat)

V

BE(sat)

V

BE(on)

FE

200
200
200
200
200

-

-

-

-

-

-

-

-

395

-

-

0.008

0.031

0.060

0.075

0.100

0.090

-

-

-

-

-

0.010

0.075

0.075

0.110

0.150

0.135

- 0.760 0.900

- 0.720 0.900

f

T

140 - -

Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo - - 1200 pF

Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo - - 100 pF

SWITCHING CHARACTERISTICS

Delay (V

= 30 V, IC = 750 mA, IB1 = 15 mA) t

CC

Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t

Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t

Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t

d

r

s

f

- - 110 ns

- - 130 ns

- - 1400 ns

- - 130 ns

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

Vdc

Vdc

Vdc

mAdc

mAdc

V

V

V

MHz

http://onsemi.com

2

NSS40601CF8T1G

0.25
IC/IB = 10

0.2

0.15

0.1

, COLLECTOR EMITTER

0.05

SATURATION VOLTAGE (V)

CE(sat)

V

0

0.001 0.01 0.1 1 10

I

, COLLECTOR CURRENT (A)

C

V

CE(sat)

25°C

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

700

650

600

550

500

450

400

350

, DC CURRENT GAIN

300

FE

h

250

200

150

0.001 0.01 0.1 1 10

25°C (5 V)

25°C (2 V)

IC, COLLECTOR CURRENT (A)

150°C (5 V)

150°C (2 V)

-55 °C (5 V)

-55 °C (2 V)

= 150°C

-55 °C

0.45
IC/IB = 100

0.4

0.35

0.3

0.25

0.2

0.15

, COLLECTOR EMITTER

0.1

SATURATION VOLTAGE (V)

CE(sat)

V

0.05

0

0.001 0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

V

CE(sat)

25°C

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC/IB = 10

1.20

1.00

-55 °C

0.80

, BASE EMITTER

BE(sat)

V

25°C

0.60

0.40

SATURATION VOLTAGE (V)

150°C

0.20

0.001 0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

= 150°C

-55 °C

Figure 3. DC Current Gain vs.

Collector Current

1.0
VCE = 2.0 V

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

, BASE EMITTER TURN-ON VOLTAGE (V)

0.001 0.01 0.1 1 10

BE(on)

V

IC, COLLECTOR CURRENT (A)

-55 °C

25°C

150°C

Figure 5. Base Emitter Turn-On Voltage vs.

Collector Current

1.0

0.8

0.6

0.4

0.2

, COLLECTOR-EMITTER VOLTAGE (V)

CE

V

0.0

http://onsemi.com

3

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

100 mA

10 mA

0.01 0.1 1 10 100

IB, BASE CURRENT (mA)

IC = 500 mA

300 mA

Figure 6. Saturation Region

NSS40601CF8T1G

1050

C

(pF)

ibo

950

850

750

650

, INPUT CAPACITANCE (pF)

550

ibo

C

450

0123456

VEB, EMITTER BASE VOLTAGE (V)

Figure 7. Input Capacitance

10

1.0

100 mS

1.0 S

200

175

150

125

100

75

, OUTPUT CAPACITANCE (pF)

50

obo

C

25

0 5 10 15 20 25 30 35

VCB, COLLECTOR BASE VOLTAGE (V)

Figure 8. Output Capacitance

1.0 mS

10 mS

C

(pF)

obo

(A)

C

I

Thermal Limit

0.1

Single Pulse Test

at T

= 25°C

amb

0.01

0.01 1.0 10 100

0.1

VCE (Vdc)

Figure 9. Safe Operating Area

ChipFET is a trademark of Vishay Siliconix.

http://onsemi.com

4

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

H

E

e1

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. DRAIN

4. GATE

5. SOURCE

6. DRAIN

7. DRAIN

8. DRAIN

8

1

SCALE 1:1

D

8765

1234

e

STYLE 2:

PIN 1. SOURCE 1

2. GATE 1

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. DRAIN 2

7. DRAIN 1

8. DRAIN 1

E

b

A

STYLE 3:

PIN 1. ANODE

2. ANODE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. CATHODE

8. CATHODE

q

c

0.05 (0.002)

ChipFETt

CASE1206A−03

ISSUE K

L

RESET

STYLE 4:

PIN 1. COLLECTOR

2. COLLECTOR

3. COLLECTOR

4. BASE

5. EMITTER

6. COLLECTOR

7. COLLECTOR

8. COLLECTOR

8765

1234

STYLE 5:

PIN 1. ANODE

2. ANODE

3. DRAIN

4. DRAIN

5. SOURCE

6. GATE

7. CATHODE

8. CATHODE

DATE 19 MAY 2009

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.

4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.

5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.

6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.

DIMAMIN NOM MAX MIN

b 0.25 0.30 0.35 0.010

c 0.10 0.15 0.20 0.004
D 2.95 3.05 3.10 0.116
E 1.55 1.65 1.70 0.061

e 0.65 BSC

e1 0.55 BSC

L 0.28 0.35 0.42 0.011

H

E

q

MILLIMETERS

1.00 1.05 1.10 0.039

1.80 1.90 2.00 0.071 0.075 0.079

5° NOM

STYLE 6:

PIN 1. ANODE

2. DRAIN

3. DRAIN

4. GATE

5. SOURCE

6. DRAIN

7. DRAIN

8. CATHODE / DRAIN

INCHES

NOM MAX

0.041 0.043

0.012 0.014

0.006 0.008

0.120 0.122

0.065 0.067

0.025 BSC

0.022 BSC

0.014 0.017

5° NOM

SOLDERING FOOTPRINT

1

2.362

0.093

0.457

8X

0.018

DOCUMENT NUMBER:

DESCRIPTION:

2.032

0.08

0.65

0.025

PITCH

8X

*This information is generic. Please refer to

0.66

0.026

ǒ

inches

mm

Ǔ

Basic Style

OPTIONAL SOLDERING FOOTPRINTS ON PAGE 2

98AON03078D

ChipFET

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

GENERIC

MARKING DIAGRAM*

xxx MG

G

xxx = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)

device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.

PAGE 1 OF 2

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019

www.onsemi.com

ChipFETt

CASE 1206A−03

ISSUE K

ADDITIONAL SOLDERING FOOTPRINTS*

DATE 19 MAY 2009

2.362

0.093

2X

0.457

0.018

2.032

1

0.08

2X

0.66

0.026

1.727

0.068

ǒ

inches

mm

1

0.457

4X

0.018

0.65

0.025

PITCH

0.66

0.026

Ǔ

Styles 1 and 4

2.032

0.08

1

2X

0.66

0.026

1

2.032

0.08

Style 2

2.032

0.08

2X4X

1.118

0.044

2X

0.66

0.026

2X

1.092

0.043

ǒ

mm

inches

2.362

0.093

Ǔ

1.092

0.043

2.362

0.093

0.65

0.025

PITCH

2X

0.457

0.018

1.118

0.044

ǒ

inches

mm

Ǔ

Style 3

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

98AON03078D

ChipFET

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

2.362

0.093

1.092

0.043

1.118

0.044

Style 5

2X

0.457

0.018

0.65

0.025

PITCH

mm

ǒ

Ǔ

inches

PAGE 2 OF 2

© Semiconductor Components Industries, LLC, 2019

www.onsemi.com

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1