ON Semiconductor NSS40301MDR2G User Manual

NSS40301MDR2G

Dual Matched 40 V, 6.0 A,
Low V

CE(sat)

These transistors are part of the ON Semiconductor e2PowerEdge

family of Low V

transistors. They are assembled to create a pair

CE(sat)

of devices highly matched in all parameters, including ultra low
saturation voltage V

CE(sat)

voltage.

Typical applications are current mirrors, differential amplifiers,
DC−DC converters and power management in portable and battery
powered products such as cellular and cordless phones, PDAs,
computers, printers, digital cameras and MP3 players. Other
applications are low voltage motor controls in mass storage products
such as disc drives and tape drives. In the automotive industry they can
be used in air bag deployment and in the instrument cluster. The high
current gain allows e

2

PowerEdge devices to be driven directly from
PMU’s control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.

Features

• Current Gain Matching to 10%

• Base Emitter Voltage Matched to 2 mV

• This is a Pb−Free Device

NPN Transistor

, high current gain and Base/Emitter turn on

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40 VOLTS

6.0 AMPS

NPN LOW V

CE(sat)

EQUIVALENT R

COLLECTOR

7,8

2

BASE

1

EMITTER

TRANSISTOR

DS(on)

BASE

44 mW

COLLECTOR

5,6

4

3

EMITTER

MAXIMUM RATINGS (T

Rating

Collector-Emitter Voltage V

Collector-Base Voltage V

Emitter-Base Voltage V

Collector Current − Continuous I

Collector Current − Peak I

Electrostatic Discharge ESD HBM Class 3B

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

= 25°C)

A

Symbol Max Unit

CEO

CBO

EBO

C

CM

40 Vdc

40 Vdc

6.0 Vdc

3.0 A

6.0 A

MM Class C

8

1

SOIC−8
CASE 751
STYLE 16

DEVICE MARKING

8

N40301
AYWWG

G

1

N40301 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

NSS40301MDR2G SOIC−8

(Pb−Free)

†

2500 /

Tape & Reel

© Semiconductor Components Industries, LLC, 2008

May, 2008 − Rev. 1

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

1 Publication Order Number:

NSS40301MD/D

NSS40301MDR2G

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

SINGLE HEATED

Total Device Dissipation (Note 1)

= 25°C

T

A

Derate above 25°C

Thermal Resistance, Junction−to−Ambient (Note 1)

Total Device Dissipation (Note 2)
T

= 25°C

A

Derate above 25°C

Thermal Resistance, Junction−to−Ambient (Note 2)

DUAL HEATED (Note 3)

Total Device Dissipation (Note 1)

= 25°C

T

A

Derate above 25°C

Thermal Resistance, Junction−to−Ambient (Note 1)

Total Device Dissipation (Note 2)

T

= 25°C

A

Derate above 25°C

Thermal Resistance, Junction−to−Ambient (Note 2)

Junction and Storage Temperature Range TJ, T

1. FR− 4 @ 10 mm2, 1 oz. copper traces, still air.

2. FR− 4 @ 100 mm

2

, 1 oz. copper traces, still air.

3. Dual heated values assume total power is the sum of two equally powered devices.

P

D

R

q

JA

P

D

R

q

JA

P

D

R

q

JA

P

D

R

q

JA

stg

576

4.6

mW

mW/°C

217 °C/W

676

5.4

mW

mW/°C

185 °C/W

653

5.2

mW

mW/°C

191 °C/W

783

6.3

mW

mW/°C

160 °C/W

−55 to +150 °C

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2

NSS40301MDR2G

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

A

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

= 10 mAdc, IB = 0)

C

Collector−Base Breakdown Voltage

(I

= 0.1 mAdc, IE = 0)

C

Emitter−Base Breakdown Voltage

(I

= 0.1 mAdc, IC = 0)

E

Collector Cutoff Current

(V

= 40 Vdc, IE = 0)

CB

Emitter Cutoff Current

(V

= 6.0 Vdc)

EB

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

40 − −

40 − −

6.0 − −

− − 0.1

− − 0.1

ON CHARACTERISTICS

DC Current Gain (Note 4)

(I

= 10 mA, VCE = 2.0 V)

C

= 500 mA, VCE = 2.0 V)

(I

C

(I

= 1.0 A, VCE = 2.0 V)

C

(I

= 2.0 A, VCE = 2.0 V)

C

(I

= 2.0 A, VCE = 2.0 V) (Note 5)

C

Collector−Emitter Saturation Voltage (Note 4)

(I

= 0.1 A, IB = 0.010 A)

C

= 1.0 A, IB = 0.100 A)

(I

C

(I

= 1.0 A, IB = 0.010 A)

C

(I

= 2.0 A, IB = 0.200 A)

C

Base −Emitter Saturation Voltage (Note 4)

(I

= 1.0 A, IB = 0.01 A)

C

Base −Emitter Turn−on Voltage (Note 4)

(I

= 0.1 A, VCE = 2.0 V)

C

= 0.1 A, VCE = 2.0 V) (Note 6)

(I

C

Cutoff Frequency

(I

= 100 mA, VCE = 5.0 V, f = 100 MHz)

C

h

h

FE(1)/hFE(2)

V

CE(sat)

V

BE(sat)

V

BE(on)

V

BE(1) −

f

FE

200
200
180
180

0.9

−

−

−

−

400
350
340
320

0.99

0.008

0.044

0.080

0.082

−

−

−

−

−

0.011

0.060

0.115

0.115

− 0.780 0.900

V

BE(2)

T

−

−

0.650

0.3

0.750

2.0

100 − −

Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − 320 450 pF

Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − 40 50 pF

SWITCHING CHARACTERISTICS

Delay (V

= 30 V, IC = 750 mA, IB1 = 15 mA) t

CC

Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t

Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t

Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t

d

r

s

f

− − 100 ns

− − 100 ns

− − 780 ns

− − 110 ns

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

5. h

FE(1)/hFE(2)

6. V

BE(1)

is the ratio of one transistor compared to the other transistor within the same package. The smaller hFE is used as numerator.

− V

is the absolute difference of one transistor compared to the other transistor within the same package.

BE(2)

Vdc

Vdc

Vdc

mAdc

mAdc

V

V

V

mV

MHz

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