ON Semiconductor NSS35200MR6T1G User Manual

NSS35200MR6T1G

35 V, 5 A, Low V

CE(sat)

PNP Transistor

ON Semiconductor’s e2PowerEdge family of low V

transistors are miniature surface mount devices featuring ultra low
saturation voltage (V

) and high current gain capability. These

CE(sat)

are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.

Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e

2

PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant*

CE(sat)

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35 VOLTS

5.0 AMPS

PNP LOW V

CE(sat)

EQUIVALENT R

6

CASE 318G

3

BASE

TRANSISTOR

DS(on)

4

5

3

2

1

TSOP−6

STYLE 6

COLLECTOR

1, 2, 5, 6

100 mW

MAXIMUM RATINGS (T

Rating Symbol Max Unit

Collector-Emitter Voltage V

Collector-Base Voltage V

Emitter-Base Voltage V

Collector Current − Continuous I

Collector Current − Peak I

Electrostatic Discharge ESD HBM Class 3

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

= 25°C)

A

CEO

CBO

EBO

C

CM

−35 Vdc

−55 Vdc

−5.0 Vdc

−2.0 Adc

−5.0 A

MM Class C

4

EMITTER

MARKING DIAGRAM

M G

VS8

G

VS8 = Device Code
M = Date Code*
G = Pb−Free Package

(*Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

Device

NSS35200MR6T1G TSOP−6

SNSS35200MR6T1G TSOP−6

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Package Shipping

3,000 /

(Pb−Free)

(Pb−Free)

Tape & Reel

3,000 /

Tape & Reel

†

© Semiconductor Components Industries, LLC, 2013

September, 2013 − Rev. 5

1 Publication Order Number:

NSS35200MR6/D

NSS35200MR6T1G

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

T

= 25°C

A

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Total Device Dissipation

T

= 25°C

A

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Thermal Resistance,

Junction−to−Lead #1

Total Device Dissipation

(Single Pulse < 10 sec.)

Junction and Storage Temperature Range TJ, T

1. FR− 4 @ Minimum Pad.

2. FR− 4 @ 1.0 X 1.0 inch Pad.

3. Refer to Figure 8.

PD (Note 1)

R

q

JA

PD (Note 2)

R

q

JA

P

(Notes 2 & 3) 1.75

(Note 1)

(Note 2)

R

q

JL

Dsingle

stg

625

5.0

mW

mW/°C

°C/W

200

1.0

8.0

W

mW/°C

°C/W

120

°C/W

80

W

−55 to +150 °C

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2

NSS35200MR6T1G

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

A

Symbol Min Typical Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

= −10 mAdc, IB = 0)

C

Collector−Base Breakdown Voltage

(I

= −0.1 mAdc, IE = 0)

C

Emitter−Base Breakdown Voltage

(I

= −0.1 mAdc, IC = 0)

E

Collector Cutoff Current

(VCB = −35 Vdc, IE = 0)

Collector−Emitter Cutoff Current

(V

= −35 Vdc)

CES

Emitter Cutoff Current

(V

= −4.0 Vdc)

EB

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CES

I

EBO

−35 −45 −

−55 −65 −

−5.0 −7.0 −

− −0.03 −0.1

− −0.03 −0.1

− −0.01 −0.1

ON CHARACTERISTICS

DC Current Gain (Note 4)

(I

= −1.0 A, VCE = −1.5 V)

C

(IC = −1.5 A, VCE = −1.5 V)
(IC = −2.0 A, VCE = −3.0 V)

Collector−Emitter Saturation Voltage (Note 4)

(I

= −0.8 A, IB = −0.008 A)

C

(IC = −1.2 A, IB = −0.012 A)
(IC = −2.0 A, IB = −0.02 A)

Base −Emitter Saturation Voltage (Note 4)

(I

= −1.2 A, IB = −0.012 A)

C

Base −Emitter Turn−on Voltage (Note 4)

(I

= −2.0 A, VCE = −3.0 V)

C

Cutoff Frequency

(I

= −100 mA, VCE = −5.0 V, f = 100 MHz)

C

Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 600 650 pF

Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 85 100 pF

Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W)

Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W)

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

h

V

CE(sat)

V

BE(sat)

V

BE(on)

FE

100
100
100

−

−

−

200
200
200

−0.125

−0.175

−0.260

−

400

−

−0.15

−0.20

−0.31

− −0.68 −0.85

− −0.81 −0.875

f

T

t

on

t

off

100 − −

− 35 − nS

− 225 − nS

Vdc

Vdc

Vdc

mAdc

mAdc

mAdc

V

V

V

MHz

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