ON Semiconductor NSR20305NXT5G Users manual
NSR20305NXT5G
l
s
2 A, 30 V Schottky Barrier
Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
www.onsemi.com
Features
• Low Forward Voltage Drop − 550 mV (Typ.) @ I
• Low Reverse Current − 30 mA (Typ.) @ V
R
= 30 V
= 2 A
F
• 2 A of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current (DC) I
Forward Surge Current
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating: Human Body Model
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(60 Hz @ 1 cycle)
Machine Model
R
F
I
FSM
I
FRM
ESD > 8
30 V
2 A
14
2.9 A
> 400
A
kV
V
MARKING
DIAGRAM
PIN 1
DSN2
(0502)
CASE 152AU
5H = Specific Device Code
M = Date Code
PIN CONNECTIONS
1
CATHODE
ORDERING INFORMATION
Device Package Shipping
NSR20305NXT5G DSN2
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
5HM
2
ANODE
5000 / Tape & Ree
†
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 0
1 Publication Order Number:
NSR20305/D
NSR20305NXT5G
THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
= 25°C
A
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
= 25°C
A
Storage Temperature Range T
Junction Temperature T
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06″ thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06″ thick single sided. Operating to steady state.
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
R
q
JA
P
D
R
q
JA
P
D
stg
J
255
490
95
1.32
°C/W
mW
°C/W
W
−40 to +125 °C
+150 °C
R(t) (C/W)
0.01
1
SINGLE PULSE
0.1
0.01
0.00000001 0.0001 0.001 0.01 0.1 1 10 100 1000
0.0000010.0000001
0.00001
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
R(t) (C/W)
SINGLE PULSE
0.1
0.01
0.00000001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.0000010.0000001
0.00001
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
www.onsemi.com
2
Loading...