NSR20305NXT5G
l
s
2 A, 30 V Schottky Barrier
Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
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Features
• Low Forward Voltage Drop − 550 mV (Typ.) @ I
• Low Reverse Current − 30 mA (Typ.) @ V
R
= 30 V
= 2 A
F
• 2 A of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current (DC) I
Forward Surge Current
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating: Human Body Model
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(60 Hz @ 1 cycle)
Machine Model
R
F
I
FSM
I
FRM
ESD > 8
30 V
2 A
14
2.9 A
> 400
A
kV
V
MARKING
DIAGRAM
PIN 1
DSN2
(0502)
CASE 152AU
5H = Specific Device Code
M = Date Code
PIN CONNECTIONS
1
CATHODE
ORDERING INFORMATION
Device Package Shipping
NSR20305NXT5G DSN2
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
5HM
2
ANODE
5000 / Tape & Ree
†
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 0
1 Publication Order Number:
NSR20305/D
NSR20305NXT5G
THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
= 25°C
A
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
= 25°C
A
Storage Temperature Range T
Junction Temperature T
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06″ thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06″ thick single sided. Operating to steady state.
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
R
q
JA
P
D
R
q
JA
P
D
stg
J
255
490
95
1.32
°C/W
mW
°C/W
W
−40 to +125 °C
+150 °C
R(t) (C/W)
0.01
1
SINGLE PULSE
0.1
0.01
0.00000001 0.0001 0.001 0.01 0.1 1 10 100 1000
0.0000010.0000001
0.00001
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
R(t) (C/W)
SINGLE PULSE
0.1
0.01
0.00000001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.0000010.0000001
0.00001
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
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2
NSR20305NXT5G
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Leakage
(V
= 10 V)
R
(VR = 30 V)
Forward Voltage
(I
= 10 mA)
F
(IF = 100 mA)
= 500 mA)
(I
F
(I
= 1 A)
F
= 2 A)
(I
F
Total Capacitance (VR = 2.0 V, f = 1.0 MHz) C
Reverse Recovery Time (IF = IR = 10 mA, I
Peak Forward Recovery Voltage (IF = 100 mA, tr = 20 ns, Figure 4) V
= 25°C unless otherwise noted)
A
= 1.0 mA, Figure 3) t
R(REC)
Symbol Min Typ Max Unit
I
R
V
F
T
rr
FRM
−
−
−
−
−
−
−
3
30
255
320
400
455
550
15
100
290
360
440
500
600
− 100 − pF
− 40 − ns
− 470 − mV
mA
mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
I
+10 V
2.0 k
100 mH
t
t
r
I
0.1 mF
F
p
10%
t
F
t
rr
t
0.1 mF
90%
INPUT SIGNAL
= 1.0 mA
i
I
R
R(REC)
OUTPUT PULSE
= IR = 10 mA; MEASURED
(I
F
at i
= 1.0 mA)
R(REC)
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
50 W INPUT
SAMPLING
OSCILLOSCOPE
V
R
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
is equal to 10 mA.
R(peak)
Figure 3. Recovery Time Equivalent Test Circuit
I
F
t
r
Time
V
F
V
FRM
V
F
Time
Figure 4. Peak Forward Recover Voltage Definition
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3
NSR20305NXT5G
TYPICAL CHARACTERISTICS
5000
500
50
, FORWARD CURRENT (mA)
F
I
5
10K
1K
100
10
125°C
150°C 90°C
0.2
−55°C−40°C25°C
VF, FORWARD VOLTAGE (V)
Figure 5. Forward Voltage
0.8
0.5
1.0
0.1
100K
1K
10
0.1
0.001
, REVERSE CURRENT (mA)
R
I
0.60.50.40.30.20.10
0.00001
VR, REVERSE VOLTAGE (V)
150°C
125°C
90°C
25°C
−40°C
−55°C
30252015105
Figure 6. Leakage Current
1000
100
0.8
10
1.0
0.5
0.2
0.1
1
, AVERAGE FORWARD POWER (mW)
F
0.1
P
IF, FORWARD CURRENT (mA)
1000 1600 2K
Figure 7. Average Forward Power Dissipation
250
200
150
100
50
, TOTAL CAPACITANCE (pF)
T
C
0
VR, REVERSE VOLTAGE (V)
Figure 9. Total Capacitance
1800140012008006004002000
f = 1.0 MHz
, AVERAGE REVERSE POWER (mW)
R
P
, FORWARD SURGE MAX
FSM
I
302520151050
1
0.1
VR, REVERSE VOLTAGE (V)
Figure 8. Average Reverse Power Dissipation
40
35
30
25
20
15
CURRENT (A)
10
Based on square wave currents
5
= 25°C prior to surge
T
J
0
Tp, PULSE ON TIME (ms)
Figure 10. Forward Surge Maximum
252015105
10010 100010.10.010.001
30
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DSN2, 1.4x0.6, 1.00P (0502)
SCALE 8:1
A1
A B
E
A
SEATING
C
PLANE
2X
2X
2X
b
0.05 B
L
0.40
AC
2
PIN 1
INDICATOR
2X
0.05 C
2X
0.05 C
TOP VIEW
0.05 C
D
2X
0.05 C
SIDE VIEW
e
1
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
1.45
1
0.60
See Application Note AND8464/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DIMENSIONS: MILLIMETERS
CASE 152AU
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN MAX
A 0.25 0.31
A1 0.00 0.05
b 0.45 0.55
D 1.40 BSC
E 0.60 BSC
e 1.00 BSC
L 0.20 0.30
GENERIC
MARKING DIAGRAM1*
PIN 1
XXXX
YYY
XXXX = Specific Device Code
YYY = Year Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
CATHODE BAND MONTH
CODING
DEC
SEP
JUN
MAR
FEB
JAN
OCTNOV
XXXX
YYY
XXXX
Y09
DATE 08 JUN 2016
GENERIC
MARKING DIAGRAM2*
PIN 1
XXM
XX = Specific Device Code
M = Date Code
DEVICE CODE
YEAR CODE
(EXAMPLE)
INDICATES AUG 2009
DOCUMENT NUMBER:
DESCRIPTION:
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
98AON79730F
DSN2, 1.4X0.6, 1.00P (0502)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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