NSR10F20NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
• Low Forward Voltage Drop − 430 mV @ 1.0 A
• Low Reverse Current − 20 mA @ 10 V VR
• 1.0 A of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
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20 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
DSN2
(0502)
CASE 152AD
MARKINGS DIAGRAM
PIN 1
10F20 = Specific Device Code
YYY = Year Code
PIN 1
2
ANODE
1
10F20
YYY
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current (DC) I
Forward Surge Current (60 Hz @ 1 cycle) I
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating: Human Body Model
Machine Model
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
May, 2017 − Rev. 3
R
F
FSM
I
FRM
ESD > 8
20 V
1.0 A
18 A
4.0 A
> 400
1 Publication Order Number:
kV
V
ADM
AD = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device Package Shipping†
NSR10F20NXT5G DSN2
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
5000 / Tape & Reel
NSR10F20/D
NSR10F20NXT5G
THERMAL CHARACTERISTICS
Characteristic Symbol Min Ty p Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
= 25°C
A
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
= 25°C
A
Storage Temperature Range T
Junction Temperature T
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
R
q
JA
P
D
R
q
JA
P
D
stg
J
228
548
85
1.47
°C/W
mW
°C/W
W
−40 to +125 °C
+150 °C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
Reverse Leakage
(VR = 10 V)
(VR = 20 V)
Forward Voltage
(IF = 0.5 A)
(IF = 1.0 A)
10
1
TJ = 125°C
TJ = 150°C
0.1
0.01
, FORWARD CURRENT (A)
F
I
75°C
25°C
−25°C
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6
, FORWARD VOLTAGE (V)
V
F
Figure 1. Forward Voltage
Symbol Min Ty p Max Unit
I
R
V
F
0.380
0.430
0.400
0.450
100000
10000
1000
100
150°C
125°C
75°C
10
1
25°C
0.1
, REVERSE CURRENT (mA)
R
I
0.01
−25°C
0.001
0 4 8 12 16 20
V
, REVERSE VOLTAGE (V)
R
Figure 2. Typical Reverse Current
20
mA
100
V
300
TA = 25°C
250
200
150
100
C, CAPACITANCE (pF)
50
0
048121620
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance
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2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DSN2, 1.4x0.6, 0.75P
SCALE 8:1
0.05 C
D
TOP VIEW
0.05 C
0.05 C
SIDE VIEW
L
L/2
1
L3
BOTTOM VIEW
MOUNTING FOOTPRINT*
1.55
0.47
PIN 1
0.60
0.95
DIMENSIONS: MILLIMETERS
See Application Note AND8464/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
A B
E
A1
L2
0.05
A
SEATING
C
PLANE
0.05 B
AC
b
0.05 B
C
CASE 152AD
ISSUE C
AC
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN MAX
A 0.25 0.31
A1 −−− 0.05
b 0.45 0.55
D 1.40 BSC
E 0.60 BSC
L 1.20 1.30
L2 0.70 0.80
L3 0.20 0.30
GENERIC
MARKING DIAGRAM1*
PIN 1
XXXX
YYY
XXXX = Specific Device Code
YYY = Year Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present. Some products may
not follow the Generic Marking.
CATHODE BAND MONTH
CODING
DEC
SEP
JUN
MAR
FEB
JAN
OCTNOV
XXXX
XXXX
INDICATES AUG 2009
DATE 24 APR 2017
GENERIC
MARKING DIAGRAM2*
PIN 1
XXM
XX = Specific Device Code
M = Date Code
DEVICE CODE
YYY
YEAR CODE
(EXAMPLE)
Y09
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
98AON40465E
DSN2, 1.4X0.6, 0.75P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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