ON Semiconductor NSR10F20NXT5G User Manual

NSR10F20NXT5G

Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.

Features

• Low Forward Voltage Drop − 430 mV @ 1.0 A

• Low Reverse Current − 20 mA @ 10 V VR

• 1.0 A of Continuous Forward Current

• ESD Rating − Human Body Model: Class 3B

ESD Rating − Machine Model: Class C

• High Switching Speed

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• LCD and Keypad Backlighting

• Camera Photo Flash

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping & Protection

Markets

• Mobile Handsets

• MP3 Players

• Digital Camera and Camcorders

• Notebook PCs & PDAs

• GPS

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20 V SCHOTTKY

BARRIER DIODE

1

CATHODE

2

DSN2

(0502)

CASE 152AD

MARKINGS DIAGRAM

PIN 1

10F20 = Specific Device Code
YYY = Year Code

PIN 1

2

ANODE

1

10F20

YYY

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage V

Forward Current (DC) I

Forward Surge Current (60 Hz @ 1 cycle) I

Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)

ESD Rating: Human Body Model

Machine Model

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

© Semiconductor Components Industries, LLC, 2013

May, 2017 − Rev. 3

R

F

FSM

I

FRM

ESD > 8

20 V

1.0 A

18 A

4.0 A

> 400

1 Publication Order Number:

kV

V

ADM

AD = Specific Device Code
M = Date Code

ORDERING INFORMATION

Device Package Shipping†

NSR10F20NXT5G DSN2

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

5000 / Tape & Reel

NSR10F20/D

NSR10F20NXT5G

THERMAL CHARACTERISTICS

Characteristic Symbol Min Ty p Max Unit

Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T

= 25°C

A

Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T

= 25°C

A

Storage Temperature Range T

Junction Temperature T

1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.

R

q

JA

P

D

R

q

JA

P

D

stg

J

228
548

85

1.47

°C/W

mW

°C/W

W

−40 to +125 °C

+150 °C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

Reverse Leakage

(VR = 10 V)
(VR = 20 V)

Forward Voltage

(IF = 0.5 A)
(IF = 1.0 A)

10

1

TJ = 125°C

TJ = 150°C

0.1

0.01

, FORWARD CURRENT (A)

F

I

75°C

25°C

−25°C

0.001
0 0.1 0.2 0.3 0.4 0.5 0.6

, FORWARD VOLTAGE (V)

V

F

Figure 1. Forward Voltage

Symbol Min Ty p Max Unit

I

R

V

F

0.380

0.430

0.400

0.450

100000

10000

1000

100

150°C

125°C

75°C

10

1

25°C

0.1

, REVERSE CURRENT (mA)

R

I

0.01

−25°C

0.001
0 4 8 12 16 20

V

, REVERSE VOLTAGE (V)

R

Figure 2. Typical Reverse Current

20

mA

100

V

300

TA = 25°C

250

200

150

100

C, CAPACITANCE (pF)

50

0

048121620

VR, REVERSE VOLTAGE (V)

Figure 3. Typical Capacitance

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