ON Semiconductor NSR05T40XV2 Datasheet
NSR05T40XV2
s
500 mA, 40 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
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Features
• Low Forward Voltage Drop − 530 mV (Typ.) @ I
• Low Reverse Current − 3.0 mA (Typ.) @ V
= 40 V
R
= 500 mA
F
• 500 mA of Continuous Forward Current
• ESD Rating: − Human Body Model: Class 3B
− Charged Device Model: Class IV
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current (DC) I
Forward Surge Current
(60 Hz @ 1 cycle)
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating: Human Body Model
Charged Device Model
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
R
F
I
FSM
I
FRM
ESD > 8
40 V
500 mA
3.0 A
1.5 A
kV
> 1
2
1
SOD−523
CASE 502
YK = Specific Device Code
M Date Code
1
CATHODE
ORDERING INFORMATION
Device Package Shipping†
NSR05T40XV2T5G SOD−523
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
MARKING
DIAGRAM
YK
M
12
2
ANODE
8000 / Tape &
Reel
© Semiconductor Components Industries, LLC, 2017
February, 2017 − Rev. 1
1 Publication Order Number:
NSR05T40XV2/D
NSR05T40XV2
1000
0
R(t) (
C/W)
THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
= 25°C
A
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
= 25°C
A
Junction and Storage Temperature Range TJ, T
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
1000
D = 0.5
0.2
100
0.1
0.05
0.02
10
R
q
JA
P
D
R
q
JA
P
D
stg
−55 to +150 °C
489
250
358
350
°C/W
mW
°C/W
mW
R(t) (°C/W)
°
1
0.1
100
10
1
0.1
0.01
SINGLE PULSE
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.010.001 100.0001 0.10.00001 10.000001
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
0.010.001 100.0001 0.10.00001 10.000001
PULSE TIME (sec)
100 1000
100 100
Figure 2. Thermal Response (Note 2)
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2
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