Trench-based Schottky
Diode, 500 mA, 30 V
NSR05301MX4
These Schottky diodes are optimized for low forward voltage drop
and low leakage current that offers the most optimal power dissipation
in applications. They are housed in space saving micro−packaging
ideal for space constrained applications.
Features
• Smallest Package Available (01005); 0.445mm x 0.24mm
• 500 mA of Continuous Forward Current
• Low Forward Voltage Drop − 430 mV (Typical) @ I
• Low Reverse Current − 25 mA (Typical) @ V
R
• Low Reverse Recovery Time − 9 ns Typical
• Low Capacitance − 19 pF Typical
Typical Applications
• Mobile and Wearable Devices
• LED Boost Converters
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
MAXIMUM RATINGS
Rating Symbol Value Unit
Forward Current (DC) I
Reverse Voltage V
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating: Human Body Model
Machine Model
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
F
R
I
FRM
ESD >8.0
F
= 30 V
500 mA
30 V
1.0 A
>400
= 200 mA
kV
V
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1
CATHODE
X4DFN2
CASE 718AA
D = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
NSR05301MX4T5G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Package
X4DFN2
(Pb−Free)
2
ANODE
MARKING
DIAGRAM
DM
Shipping†
10000 /
Tape & Reel
© Semiconductor Components Industries, LLC, 2017
October, 2020 − Rev. 1
1 Publication Order Number:
NSR05301/D
NSR05301MX4
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
= 25°C
A
R
q
JA
P
D
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
= 25°C
A
Junction Temperature Range T
Storage Temperature Range T
Lead Solder Temperature − Maximum (10 seconds) T
1. Mounted onto a 4 in2 FR−4 board 10 mm2 1 oz. Cu 0.06’ thick single−sided. Operating to steady state.
2. Mounted onto a 4 in
2
FR−4 board 2 cm2 1 oz. Cu 0.06’ thick single−sided. Operating to steady state.
R
q
P
STG
JA
D
J
L
614.9
203
239.4
522
−55 to +125 °C
−55 to +150 °C
260 °C
°C/W
mW
°C/W
mW
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
0.01
(°C/W)
1
0.1
0.01
R(t), TRANSIENT THERMAL RESPONSE
Single Pulse
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
0.01
(°C/W)
1
100 10000.00000010.00000001
t, PULSE TIME (s)
Figure 1. Thermal Response (Note 1)
0.1
0.01
R(t), TRANSIENT THERMAL RESPONSE
Single Pulse
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
100 10000.00000010.00000001
t, PULSE TIME (s)
Figure 2. Thermal Response (Note 2)
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NSR05301MX4
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Leakage
(V
= 10 V)
R
(VR = 30 V)
Forward Voltage
(I
= 100 mA)
F
(IF = 200 mA)
= 500 mA)
(I
F
Total Capacitance
(V
= 5.0 V, f = 1 MHz)
R
Reverse Recovery Time
(I
= IR = 10 mA, I
F
R(REC)
= 1.0 mA)
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
I
R
V
F
C
T
t
rr
15
25
355
430
640
50
100
480
540
800
19 pF
9.0 11 ns
mA
mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
500
125°C
100
85°C
25°C
10
, FORWARD CURRENT (mA)
F
I
1
0.1 0.2 0.6
0.0 0.7
0.3 0.4 0.5
0°C
−55°C
VF, FORWARD VOLTAGE (V)
Figure 3. Forward Voltage
1E−02
125°C
1E−03
85°C
1E−04
1E−05
25°C
0°C
1E−06
1E−07
, REVERSE CURRENT (A)
R
I
1E−08
−55°C
1E−09
0 2 16 24
4 6 8 101214 182022 262830
V
, REVERSE VOLTAGE (V)
R
Figure 4. Leakage Current
50
45
TA = 25°C
f = 1 MHz
40
35
30
25
20
15
10
, TOTAL CAPACITANCE (pF)
T
C
5
0
0 5 20 30
10 15 25
, REVERSE VOLTAGE (V)
V
R
Figure 5. Total Capacitance
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 10:1
X4DFN2, 0.445x0.24, 0.27P
CASE 718AA
ISSUE A
DATE 21 MAR 2017
PIN 1
REFERENCE
0.03 C
0.03 C
D
TOP VIEW
A1
SIDE VIEW
e
e/2
PIN 1
L2X
BOTTOM VIEW
A
B
E
A
SEATING
C
PLANE
b
2X
2
A0.10 BC
NOTE 3
0.05
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
MILLIMETERS
DIM MIN NOM
A 0.15 0.18
A1 −−− −−−
b 0.170 0.185
D 0.415 0.445
E 0.210 0.240
e 0.270 BSC
L 0.105 0.120
MAX
0.21
0.03
0.200
0.475
0.270
0.135
GENERIC
MARKING DIAGRAMS*
X
X = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Some products may not follow the Generic
X
Marking.
RECOMMENDED
MOUNTING FOOTPRINT*
0.27
PITCH
1
2X
0.21
2X
0.13
DIMENSIONS: MILLIMETERS
See Application Note AND8398/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON29067G
X4DFN2, 0.445X0.24, 0.27P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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