NSR02100HT1G
s
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Fast Switching Speed
• Low Leakage Current
• Low Forward Voltage − 0.45 V @ I
• Surface Mount Device
• Low Capacitance Diode
• NSVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
= 1 mAdc
F
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100 VOLT SCHOTTKY
BARRIER DIODE
SOD−323
CASE 477
STYLE 1
MAXIMUM RATINGS
Characteristic Symbol Value Unit
Total Device Dissipation FR−5 Board,
(Note 1)
T
= 25°C
A
Derate above 25°C
Forward Current (DC) I
Non−Repetitive Peak Forward Current,
t
< 10 msec
p
Thermal Resistance
Junction−to−Ambient
Junction and Storage Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Minimum Pad
P
I
FSM
R
TJ, T
D
200
1.57mWmW/°C
JA
stg
200 mA
2 A
635 °C/W
−55
to150
°C
F
q
1
CATHODE
2
ANODE
MARKING DIAGRAM
JCM G
G
1
JC = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
2
ORDERING INFORMATION
Device Package Shipping
NSR02100HT1G SOD−323
(Pb−Free)
NSVR02100HT1G SOD−323
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†
© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 1
1 Publication Order Number:
NSR02100HT1/D
NSR02100HT1G
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Breakdown Voltage
(IR = 10 μA)
Reverse Leakage
(V
= 50 V)
R
Reverse Leakage
(V
= 100 V)
R
Forward Voltage
(I
= 1 mAdc)
F
Forward Voltage
(IF = 10 mAdc)
Forward Voltage
(I
= 100 mAdc)
F
Forward Voltage
(I
= 200 mAdc)
F
Total Capacitance
(V
= 1.0 V, f = 1.0 MHz)
R
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
V
R
I
R
I
R
V
F
V
F
V
F
V
F
C
T
− 100 −
− − 0.05
− − 0.15
− − 0.45
− − 0.57
− − 0.80
− − 0.95
− 4 10
V
μAdc
mAdc
Vdc
Vdc
Vdc
Vdc
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
, FORWARD CURRENT (A)C
F
NSR02100HT1G
TYPICAL CHARACTERISTICS
1
0.1
−55°C
150°C
0.01
125°C
0.001
0.0001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
1000
75°C
25°C
100
10
1
0.1
0.01
0.001
, REVERSE CURRENT (μA) I
0.0001
R
I
0.00001
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
, TOATAL CAPACITANCE (pF)
T
1.0
0.5
TA = 150°C
TA = 125°C
0 10 20 30 40 50 60 10070 9080
, REVERSE VOLTAGE (V)
V
R
TA = 85°C
TA = 25°C
TA = −55°C
Figure 2. Leakage Current
0 10 20 30 40 50 60 10070 9080
, REVERSE VOLTAGE (V)
V
R
Figure 3. Total Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
2
1
1
STYLE 1 STYLE 2
SCALE 4:1
1
b
C
NOTE 3
NOTE 5
SOLDERING FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
2
H
E
D
E
2
L
A1
0.63
0.025
1.60
0.063
2.85
0.112
SOD−323
CASE 477−02
ISSUE H
0.83
0.033
A3
DATE 13 MAR 2007
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
MILLIMETERS
DIM MIN NOM MAX
A 0.80 0.90 1.00
A1 0.00 0.05 0.10
A3 0.15 REF
b 0.25 0.32 0.4
C 0.089 0.12 0.177
D 1.60 1.70 1.80
A
E 1.15 1.25 1.35
0.08
L
H
2.30 2.50 2.70
E
INCHES
MIN NOM MAX
0.031 0.035 0.040
0.000 0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
GENERIC
MARKING DIAGRAM*
XX M
STYLE 1 STYLE 2
XX = Specific Device Code
M = Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
XX M
STYLE 2:
NO POLARITY
DOCUMENT NUMBER:
DESCRIPTION:
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
98ASB17533C
SOD−323
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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