ON Semiconductor NSR02100HT1G User Manual

NSR02100HT1G

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Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.

Features

• Fast Switching Speed

• Low Leakage Current

• Low Forward Voltage − 0.45 V @ I

• Surface Mount Device

• Low Capacitance Diode

• NSVR Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

= 1 mAdc

F

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100 VOLT SCHOTTKY

BARRIER DIODE

SOD−323

CASE 477

STYLE 1

MAXIMUM RATINGS

Characteristic Symbol Value Unit

Total Device Dissipation FR−5 Board,
(Note 1)

T

= 25°C

A

Derate above 25°C
Forward Current (DC) I
Non−Repetitive Peak Forward Current,

t

< 10 msec

p

Thermal Resistance

Junction−to−Ambient
Junction and Storage Temperature Range

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. FR−4 Minimum Pad

P

I

FSM

R

TJ, T

D

200

1.57mWmW/°C

JA

stg

200 mA

2 A

635 °C/W

−55

to150

°C

F

q

1

CATHODE

2

ANODE

MARKING DIAGRAM

JCM G

G

1

JC = Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

2

ORDERING INFORMATION

Device Package Shipping

NSR02100HT1G SOD−323

(Pb−Free)

NSVR02100HT1G SOD−323

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

3,000 /

Tape & Reel

3,000 /

Tape & Reel

†

© Semiconductor Components Industries, LLC, 2016

December, 2016 − Rev. 1

1 Publication Order Number:

NSR02100HT1/D

NSR02100HT1G

ELECTRICAL CHARACTERISTICS (T

Characteristic

Reverse Breakdown Voltage

(IR = 10 μA)
Reverse Leakage

(V

= 50 V)

R

Reverse Leakage

(V

= 100 V)

R

Forward Voltage

(I

= 1 mAdc)

F

Forward Voltage

(IF = 10 mAdc)
Forward Voltage

(I

= 100 mAdc)

F

Forward Voltage

(I

= 200 mAdc)

F

Total Capacitance

(V

= 1.0 V, f = 1.0 MHz)

R

= 25°C unless otherwise noted)

A

Symbol Min Typ Max Unit

V

R

I

R

I

R

V

F

V

F

V

F

V

F

C

T

− 100 −

− − 0.05

− − 0.15

− − 0.45

− − 0.57

− − 0.80

− − 0.95

− 4 10

V

μAdc

mAdc

Vdc

Vdc

Vdc

Vdc

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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2