ON Semiconductor NSBC114EDXV6T1, NSBC114EDXV6T5 Service Manual

NSBC114EDXV6T1,

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NSBC114EDXV6T5

Preferred Devices

Dual Bias Resistor
Transistors

NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network

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The BR T (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low power surface mount applications where board space is at
a premium.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Lead−Free Solder Plating

• These are Pb−Free Devices

MAXIMUM RATINGS

(TA = 25°C unless otherwise noted, common for Q1 and Q2)

Rating Symbol Value Unit

Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation; TA = 25°C
Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation; TA = 25°C
Derate above 25°C

Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature

Range

1. FR−4 @ Minimum Pad

CBO
CEO

C

Symbol Max Unit

P

D

R

q

JA

Symbol Max Unit

P

D

R

q

JA

TJ, T

stg

50 Vdc
50 Vdc

100 mAdc

357 (Note 1)

2.9 (Note 1)mWmW/°C

350 (Note 1) °C/W

500 (Note 1)

4.0 (Note 1)mWmW/°C

250 (Note 1) °C/W

−55 to +150 °C

(1)(2)(3)

R

Q

1

R

2

(4) (5) (6)

NSBC114EDXV6T1

R

1

2

Q

2

R

1

MARKING
DIAGRAM

SOT−563

CASE 463A

1

xx = Device Code (Refer to Page 2)
M = Date Code
G = Pb−Free Package

PLASTIC

xx M G

1

ORDERING INFORMATION

Device Package Shipping

NSBC1xxxDXV6T1 SOT−563* 4000/Tape & Ree
NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Ree
NSBC1xxxDXV6T5 SOT−563* 8000/Tape & Ree
NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Ree
†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

*This package is inherently Pb−Free.

†

DEVICE MARKING INFORMATION

See specific marking information in the device marking table
on page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2006

May, 2006 − Rev. 6

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

NSBC114EDXV6/D

NSBC114EDXV6T1, NSBC114EDXV6T5

DEVICE MARKING, ORDERING, AND RESISTOR VALUES

Device† Package* Marking

NSBC114EDXV6T1 SOT−563 7A 10 10
NSBC124EDXV6T1 SOT−563 7B 22 22
NSBC144EDXV6T1 SOT−563 7C 47 47
NSBC114YDXV6T1 SOT−563 7D 10 47
NSBC114TDXV6T1 (Note 2) SOT−563 7E 10 ∞
NSBC143TDXV6T1 (Notes 2) SOT−563 7F 4.7 ∞
NSBC113EDXV6T1 (Note 2) SOT−563 7G 1.0 1.0
NSBC123EDXV6T1 (Notes 2) SOT−563 7H 2.2 2.2
NSBC143EDXV6T1 (Notes 2) SOT−563 7J 4.7 4.7
NSBC143ZDXV6T1 (Notes 2) SOT−563 7K 4.7 47
NSBC124XDXV6T1 (Notes 2) SOT−563 7L 22 47
NSBC123JDXV6T1 (Note 2) SOT−563 7M 2.2 47
NSBC115EDXV6T1 (Notes 2) SOT−563 7N 100 100
NSBC144WDXV6T1 (Notes 2) SOT−563 7P 47 22

†The “G’’ suffix indicates Pb−Free package available.
*This package is inherently Pb−Free.

2. New resistor combinations. Updated curves to follow in subsequent data sheets.

R1 (kW) R2 (kW)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted, common for Q1 and Q2)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I
Emitter-Base Cutoff Current NSBC114EDXV6T1

(VEB = 6.0 V, IC = 0) NSBC124EDXV6T1

NSBC144EDXV6T1
NSBC114YDXV6T1

NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1

NSBC123JDXV6T1
NSBC115EDXV6T1

NSBC144WDXV6T1
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

CBO
CEO

I

EBO

V

(BR)CBO
(BR)CEO

− − 100 nAdc

− − 500 nAdc

−

−

0.5

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

mAdc

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

0.05

0.13
50 − − Vdc
50 − − Vdc

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NSBC114EDXV6T1, NSBC114EDXV6T5

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted, common for Q1 and Q2) (Continued)

A

Characteristic

ON CHARACTERISTICS (Note 4)

DC Current Gain NSBC114EDXV6T1
(V

= 10 V, IC = 5.0 mA) NSBC124EDXV6T1

CE

NSBC144EDXV6T1
NSBC114YDXV6T1

NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1

NSBC123JDXV6T1
NSBC115EDXV6T1

NSBC144WDXV6T1

Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) NSBC113EDXV6T1/NSBC123EDXV6T1
(IC = 10 mA, IB = 1 mA) NSBC114TDXV6T1/NSBC143TDXV6T1

NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1

Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) NSBC114EDXV6T1

NSBC124EDXV6T1
NSBC114YDXV6T1

NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1

NSBC123JDXV6T1

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) NSBC144EDXV6T1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) NSBC115EDXV6T1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) NSBC144WDXV6T1

Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) NSBC113EDXV6T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) NSBC114TDXV6T1

NSBC143TDXV6T1
NSBC143ZDXV6T1

Input Resistor NSBC114EDXV6T1

NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1

NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1

NSBC123JDXV6T1
NSBC115EDXV6T1

NSBC144WDXV6T1

Resistor Ratio NSBC114EDXV6T1/NSBC124EDXV6T1/

NSBC144EDXV6T1/NSBC115EDXV6T1

NSBC114YDXV6T1

NSBC114TDXV6T1/NSBC143TDXV6T1

NSBC113EDXV6T1/NSBC123EDXV6T1/NSBC143EDXV6T1

NSBC143ZDXV6T1
NSBC124XDXV6T1

NSBC123JDXV6T1

NSBC144WDXV6T1

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

Symbol Min Typ Max Unit

h

FE

V

CE(sat)

V

OL

V

OH

R1 7.0

35
60
80

80
160
160

3.0

8.0
15
80
80
80
80
80

60
100
140
140
350
350

5.0
15
30

200
150
140
150
140

−

−

−

−

−

−

−

−

−

−

−

−

−

−

− − 0.25 Vdc

Vdc

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

4.9 − − Vdc

10

15.4

32.9

7.0

7.0

3.3

0.7

1.5

3.3

3.3

15.4

1.54
70

32.9

22
47
10
10

4.7

1.0

2.2

4.7

4.7
22

2.2

100

47

13

28.6

61.1
13
13

6.1

1.3

2.9

6.1

6.1

28.6

2.86

130

61.1

k W

R1/R2

0.8

1.0

1.0

0.1

2.1

1.2

0.25

−

−

1.2

0.185

0.56

0.056

2.6

0.17

−

0.8

0.055

0.38

0.038

1.7

0.21

0.47

0.047

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