ON Semiconductor NSBC114EDXV6T1, NSBC114EDXV6T5 Service Manual

NSBC114EDXV6T1,
l
l
l
l
s
NSBC114EDXV6T5
Preferred Devices
Dual Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
http://onsemi.com
The BR T (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EDXV6T1 series, two BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead−Free Solder Plating
These are Pb−Free Devices
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating Symbol Value Unit
Collector-Base Voltage V Collector-Emitter Voltage V Collector Current I
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation; TA = 25°C Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation; TA = 25°C Derate above 25°C
Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature
Range
1. FR−4 @ Minimum Pad
CBO CEO
C
Symbol Max Unit
P
D
R
q
JA
Symbol Max Unit
P
D
R
q
JA
TJ, T
stg
50 Vdc 50 Vdc
100 mAdc
357 (Note 1)
2.9 (Note 1)mWmW/°C
350 (Note 1) °C/W
500 (Note 1)
4.0 (Note 1)mWmW/°C
250 (Note 1) °C/W
−55 to +150 °C
(1)(2)(3)
R
Q
1
R
2
(4) (5) (6)
NSBC114EDXV6T1
R
1
2
Q
2
R
1
MARKING DIAGRAM
SOT−563
CASE 463A
1
xx = Device Code (Refer to Page 2) M = Date Code G = Pb−Free Package
PLASTIC
xx M G
1
ORDERING INFORMATION
Device Package Shipping
NSBC1xxxDXV6T1 SOT−563* 4000/Tape & Ree NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Ree NSBC1xxxDXV6T5 SOT−563* 8000/Tape & Ree NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Ree †For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
*This package is inherently Pb−Free.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 6
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
NSBC114EDXV6/D
NSBC114EDXV6T1, NSBC114EDXV6T5
DEVICE MARKING, ORDERING, AND RESISTOR VALUES
Device Package* Marking
NSBC114EDXV6T1 SOT−563 7A 10 10 NSBC124EDXV6T1 SOT−563 7B 22 22 NSBC144EDXV6T1 SOT−563 7C 47 47 NSBC114YDXV6T1 SOT−563 7D 10 47 NSBC114TDXV6T1 (Note 2) SOT−563 7E 10 NSBC143TDXV6T1 (Notes 2) SOT−563 7F 4.7 NSBC113EDXV6T1 (Note 2) SOT−563 7G 1.0 1.0 NSBC123EDXV6T1 (Notes 2) SOT−563 7H 2.2 2.2 NSBC143EDXV6T1 (Notes 2) SOT−563 7J 4.7 4.7 NSBC143ZDXV6T1 (Notes 2) SOT−563 7K 4.7 47 NSBC124XDXV6T1 (Notes 2) SOT−563 7L 22 47 NSBC123JDXV6T1 (Note 2) SOT−563 7M 2.2 47 NSBC115EDXV6T1 (Notes 2) SOT−563 7N 100 100 NSBC144WDXV6T1 (Notes 2) SOT−563 7P 47 22
†The “G’’ suffix indicates Pb−Free package available. *This package is inherently Pb−Free.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
R1 (kW) R2 (kW)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted, common for Q1 and Q2)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I Emitter-Base Cutoff Current NSBC114EDXV6T1
(VEB = 6.0 V, IC = 0) NSBC124EDXV6T1
NSBC144EDXV6T1 NSBC114YDXV6T1
NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1
NSBC123JDXV6T1 NSBC115EDXV6T1
NSBC144WDXV6T1 Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
CBO CEO
I
EBO
V
(BR)CBO (BR)CEO
100 nAdc
500 nAdc
0.5
mAdc
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13 50 Vdc 50 Vdc
http://onsemi.com
2
NSBC114EDXV6T1, NSBC114EDXV6T5
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
A
Characteristic
ON CHARACTERISTICS (Note 4)
DC Current Gain NSBC114EDXV6T1 (V
= 10 V, IC = 5.0 mA) NSBC124EDXV6T1
CE
NSBC144EDXV6T1 NSBC114YDXV6T1
NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1
NSBC123JDXV6T1 NSBC115EDXV6T1
NSBC144WDXV6T1
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) NSBC113EDXV6T1/NSBC123EDXV6T1 (IC = 10 mA, IB = 1 mA) NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) NSBC114EDXV6T1
NSBC124EDXV6T1 NSBC114YDXV6T1
NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1
NSBC123JDXV6T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) NSBC144EDXV6T1 (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) NSBC115EDXV6T1 (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) NSBC144WDXV6T1
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) NSBC113EDXV6T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) NSBC114TDXV6T1
NSBC143TDXV6T1 NSBC143ZDXV6T1
Input Resistor NSBC114EDXV6T1
NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1
NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1
NSBC123JDXV6T1 NSBC115EDXV6T1
NSBC144WDXV6T1
Resistor Ratio NSBC114EDXV6T1/NSBC124EDXV6T1/
NSBC144EDXV6T1/NSBC115EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC113EDXV6T1/NSBC123EDXV6T1/NSBC143EDXV6T1
NSBC143ZDXV6T1 NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144WDXV6T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Symbol Min Typ Max Unit
h
FE
V
CE(sat)
V
OL
V
OH
R1 7.0
35 60 80
80 160 160
3.0
8.0 15 80 80 80 80 80
60 100 140 140 350 350
5.0 15 30
200 150 140 150 140
0.25 Vdc
Vdc
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9 Vdc
10
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54 70
32.9
22 47 10 10
4.7
1.0
2.2
4.7
4.7 22
2.2
100
47
13
28.6
61.1 13 13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k W
R1/R2
0.8
1.0
1.0
0.1
2.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
0.17
0.8
0.055
0.38
0.038
1.7
0.21
0.47
0.047
http://onsemi.com
3
Loading...
+ 6 hidden pages