ON Semiconductor NRTS3060MFS User Manual

Schottky Barrier Rectifier Trench-based, High Performance

NRTS3060MFS

This Trench Schottky rectifier is high performance device in SO−8 FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Oring or reverse protection application. The SO−8 FL package provides an excellent thermal performance, less land area of board space, and low profile.

Features

• Lower Forward Voltage Drop

• Less Leakage Current in High Temperature

• Small Junction Capacitance for High Switching Frequency

• Higher Avalanche Energy Capability

• 175°C Operating Junction Temperature

• Good Alternative Solution of SMC and DPAK Package

• Small Footprint − Land Area: 31.2 mm

• Low Profile − Maximum Height of 1.1 mm

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

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TRENCH SCHOTTKY

RECTIFIER

30 AMPERES

60 VOLTS

1,2,3

SO−8 FLAT LEAD

CASE 488AA

STYLE 2

Not Used

5,6

MARKING DIAGRAM

T3060

AYWZZ

Mechanical Characteristics:

• Case: Molded Epoxy

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 95 mg (Approximately)

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Maximum for 10 Seconds

• MSL 1

Applications

• High Switching Frequency DC/DC Converter

• 2

Rectifier

• Freewheeling Diode used with Inductive Load

• Oring / Reverse Protection

T3060 = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

ORDERING INFORMATION

Device Package Shipping

NRTS3060MFST3G SO−8 FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

5000 /

Tape & Reel

†

January, 2021 − Rev. 0

1 Publication Order Number:

NRTS3060MFS/D

NRTS3060MFS

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

Continuous Forward Current (TC = 164°C, DC) I

Peak Repetitive Forward Current (TC = 162°C, Square Wave, Duty = 0.5) I

Non−Repetitive Peak Surge Current

Sinusoidal Halfwave, 8.3 ms

Square wave, 1 ms 600

Square wave, 100 ms

Non−Repetitive Avalanche Energy (TJ = 25°C) E

Storage Temperature Range T

Operating Junction Temperature Range (Note 1) T

ESD Rating (Human Body Model) 3B

ESD Rating (Machine Model) M4

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient dP

RRM

RWM

F(DC)

FRM

FSM

stg

/dTJ < 1/R

60 V

30 A

60 A

350

1200

800 mJ

−65 to +175 °C

−55 to +175 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient (Note 2)

Thermal Resistance, Junction−to−Case Bottom (Note 2)

Thermal Characterization, Junction−to−Case Top (Note 2)

Thermal Characterization, Junction−to−Lead of Cathode (Note 2)

JCB

JCT

JLC

56 °C/W

0.65 °C/W

3.72 °C/W

1.44 °C/W

2. Assume 600 mm2, 1 oz. copper bond pad on a FR4 board.

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Typ Max Unit

Instantaneous Forward Voltage

= 15 A, TJ = 25°C)

= 15 A, TJ = 125°C)

= 30 A, TJ = 25°C)

= 30 A, TJ = 125°C)

Instantaneous Reverse Current

= Rated DC Voltage, TJ = 25°C)

= Rated DC Voltage, TJ = 125°C)

Junction Capacitance

= 1 V, TJ = 25°C, f = 1 MHz)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

0.48

0.40

0.53

0.48

17 10

−

0.60

0.57

100

3140 −

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