The NL5S4157A is a low RON SPDT analog switch. The device is
designed for low operating voltage, high current switching of speaker
output for mobile applications. It can switch a balanced stereo output.
It can handle a balanced microphone/speaker/ringtone generator in
monophone mode.
Features
• Wide V
• OVT up to +5.5 V for Control pin
• R
ON
• Rail−to−Rail Input/Output
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
Typical Applications
• Cell Phone Speaker/Microphone Switching
• Ringtone−Chip/Amplifier Switching
• Stereo Balanced (Push−Pull) Switching
• RF PA Routing
• General Switching
Operating Range: 1.65 V to 5.5 V
CC
: Typically < 1 W at VCC = 4.5 V
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1
SC−88/SC70−6/SOT−363
CASE 419B−02
MARKING DIAGRAM
6
ATM G
G
1
AT= Specific Device Code
M= Date Code*
G= Pb−Free Package
See detailed ordering and shipping information on page 6 of
this data sheet.
1Publication Order Number:
NL5S4157A/D
Page 2
NL5S4157A
PIN ASSIGNMENTS
Figure 1. NL5S4157A (Top View)
PIN DESCRIPTION
PinNameDescription
1NONormally−Open Port
2GNDSupply Ground
3NCNormally−Closed Port
4COMCommon Port
5V
6INSwitch Select Input
FUNCTION TABLE
INSwitch
LNC to COM
HNO to COM
Figure 2. Analog Symbol
CC
Supply
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2
Page 3
NL5S4157A
MAXIMUM RATINGS
SymbolRatingValueUnit
V
CC
V
IS
V
IN
I
OK
I
IK
I
I/O
I
I/O−pk
T
s
ESDHuman Body Model (HBM)2kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
RECOMMENDED OPERATING CONDITIONS
SymbolParameterMinMaxUnit
V
CC
V
V
T
tr, t
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Positive DC Supply Voltage−0.5 to +6.0V
Switch Input / Output Voltage−0.5 to VCC+0.5V
Digital Select Input Voltage−0.5 to +6.0V
I/O Port Diode Current±100mA
Select Input Diode Current−100mA
Continuous DC Current Through Analog Switch±100mA
Peak Current Through Analog Switch, 10% Duty Cycle±300mA
Storage Temperature−65 to +150°C
Positive DC Supply Voltage1.655.5V
IS
IN
A
f
Switch Input / Output VoltageGNDV
Digital Select Input VoltageGND5.5V
Operating Temperature Range−40+125°C
Input Transition Rise or Fall Time
(Select Input IN)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
PIN 1 ORIENTATION IN TAPE AND REEL
Pin 1 Orientation in Tape and Reel
Figure 3.
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6
Page 7
Test Setups
NL5S4157A
Figure 4. t
(Time Break−Before−Make)
BBM
Figure 5. tON/t
OFF
Test Set-Up
Figure 6. tON/t
OFF
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7
Page 8
V
NL5S4157A
OUT
V
IN
Off−IsolationCrosstalk
V
OUT
V
IN
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. Crosstalk is measured from an off channel to an on channel. On loss is the bandwidth of an On switch. V
, VCT, Bandwidth and V
ISO
ONL
are independent of the input signal direction.
or VCT = Off Channel Isolation or crosstalk = 20 Log for V
V
ISO
V
= On Channel Loss = 20 Log for V
ONL
OUT
Bandwidth (BW) = the frequency 3 dB below V
/ V
at 100 kHz to 50 MHz
IN
ONL
OUT
/ V
IN
Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk
(On Channel to Off Channel)/V
ONL
Figure 8. Charge Injection: (Q)
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8
Page 9
NL5S4157A
TYPICAL CHARACTERISTICS
0
−10
−20
−30
−40
−50
−60
−70
, NO/NC TO COM (dB)
ISO
−80
V
−90
−100
0.005
0.004
0.003
THD (%)
0.002
0.001
0
−1
−2
−3
BW (dB)
−4
−5
(W)
R
ON
−6
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Figure 10. Bandwidth vs. Frequency
125°C
85°C
25°C
−40°C
1001010.10.01
FREQUENCY (MHz)FREQUENCY (MHz)
Figure 9. V
vs. Frequency
ISO
@ V
= 4.5 V
CC
1001010.10.01
(W)
R
0
FREQUENCY (Hz)VIS (V)
Figure 11. Total Harmonic DistortionFigure 12. ON Resistance vs. Switch Voltage
0.9
0.8
ON
0.7
0.6
0.5
0.4
0.3
0.2
125°C
85°C
25°C
−40°C
2.54.55.54.53.52.51.50.5
VIS (V)VIS (V)
Figure 13. ON Resistance vs. Switch Voltage
@ V
= 4.5 V
CC
(W)
R
ON
0.4
0.9
0.8
0.7
0.6
0.5
0.4
2.7 V
3.0 V
@ V
3.6 V
= 2.7 V
CC
4.5 V
5.5 V
100K10K1K10010
4.03.53.02.01.51.00.50
3.02.52.01.51.00.50
5.04.03.02.01.00
Figure 14. ON Resistance vs. Switch Voltage
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Page 10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
1
SCALE 2:1
D
A
654
E
123
2X
bbb H
D
e
B
TOP VIEW
6X
ccc
C
SIDE VIEWEND VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.30
0.65
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
2X
aaa H D
D
E1
L2
aaa C
2X 3 TIPS
b
6X
M
A2
A
A1
C
6X
0.66
SEATING
PLANE
2.50
DIMENSIONS: MILLIMETERS
Cddd
A-B D
DETAIL A
CASE 419B−02
ISSUE Y
H
L
DETAIL A
GAGE
PLANE
DATE 11 DEC 2012
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
XXX = Specific Device Code
M= Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
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Page 11
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 2:
CANCELLED
STYLE 8:
CANCELLED
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 3:
CANCELLED
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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