ON Semiconductor NL17SZ38 User Manual

2-Input NAND Gate,
Open Drain Output

NL17SZ38

The NL17SZ38 is a single 2−Input NAND gate with open drain

output operating from a 1.65 V to 5.5 V supply.

Features

• Designed for 1.65 V to 5.5 V V

• 2.4 ns t

at VCC = 5 V (Typ)

PD

Operation

CC

• Inputs/Outputs Overvoltage Tolerant up to 5.5 V

• I

Supports Partial Power Down Protection

OFF

• Sink 32 mA at 4.5 V

• Available in SC−88, SC−74 and UDFN6 Packages

• Chip Complexity < 100 FETs

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

IEEC / IEC

A
B

Figure 1. Logic Symbol

&

Y

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SC−88A

DF SUFFIX

CASE 419A

SC−74A

DBV SUFFIX

CASE 318BQ

UDFN6

1

1.45 x 1.0

CASE 517AQ

UDFN6

1.0 x 1.0

CASE 517BX

X, XXX = Specific Device Code
M = Date Code*
G = Pb−Free Package

MARKING

DIAGRAMS

XXXMG

G

XXX MG

G

XM

X M

1

© Semiconductor Components Industries, LLC, 2019

October, 2020 − Rev. 1

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.

1 Publication Order Number:

NL17SZ38/D

NL17SZ38

B

1

OVT

A

2

GND Y

3

SC−88A / SC−74A UDFN6

5

4

Figure 2. Pinout (Top View)

PIN ASSIGNMENT (SC−88A/SC−74A)

Pin Function

1 B

2 A

3 GND

4 Y

5 V

CC

1

GND

B

2

A

3

V

CC

6

V

CC

5

NC

4

Y

PIN ASSIGNMENT (UDFN)

Pin Function

1 B

2 A

3 GND

4 Y

5 NC

6 V

CC

FUNCTION TABLE

Inputs Output

A B Y

L L Z

L H Z

H L Z

H H L

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2

NL17SZ38

MAXIMUM RATINGS

Symbol Characteristics Value Unit

V

CC

V

IN

V

OUT

I

IK

I

OK

I

OUT

ICC or I

T

STG

T

L

T

J

q

JA

P

D

MSL Moisture Sensitivity Level 1 −

F

R

V

ESD

I

Latchup

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

1. Applicable to devices with outputs that may be tri−stated.

2. Measured with minimum pad spacing on an FR4 board, using 10mm−by−1inch, 2 ounce copper trace no air flow per JESD51−7.

3. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to EIA/JESD22−C101−F. JEDEC recommends that ESD qualification to
EIA/JESD22−A115−A (Machine Model) be discontinued per JEDEC/JEP172A.

4. Tested to EIA/JESD78 Class II.

DC Supply Voltage −0.5 to +6.5 V

DC Input Voltage −0.5 to +6.5 V

DC Output Voltage Active−Mode (High or Low State)

Tri−State Mode (Note 1)

Power−Down Mode (V

CC

= 0 V)

−0.5 to VCC + 0.5

−0.5 to +6.5

−0.5 to +6.5

DC Input Diode Current VIN < GND −50 mA

DC Output Diode Current V

< GND −50 mA

OUT

DC Output Source/Sink Current ±50 mA

DC Supply Current per Supply Pin or Ground Pin ±100 mA

GND

Storage Temperature Range −65 to +150 °C

Lead Temperature, 1 mm from Case for 10 secs 260 °C

Junction Temperature Under Bias +150 °C

Thermal Resistance (Note 2) SC−88A

SC−74A

UDFN6

Power Dissipation in Still Air SC−88A

SC−74A

UDFN6

377
320
154

332
390
812

Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in −

ESD Withstand Voltage (Note 3) Human Body Model

Charged Device Model

2000
1000

Latchup Performance (Note 4) $100 mA

V

°C/W

mW

V

RECOMMENDED OPERATING CONDITIONS

Symbol Characteristics Min Max Unit

V

V

V

OUT

T

t

r

CC

Positive DC Supply Voltage 1.65 5.5 V

DC Input Voltage 0 5.5

IN

DC Output Voltage Active−Mode (High or Low State)

Tri−State Mode (Note 1)

Power−Down Mode (V

Operating Temperature Range −55 +125 °C

A

, t

Input Rise and Fall Time VCC = 1.65 V to 1.95 V

f

VCC = 2.3 V to 2.7 V

CC

= 0 V)

VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V

0
0
0

0
0
0
0

V

5.5

5.5

20
20
10

V

CC

ns

5

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

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