ON Semiconductor NL17SH08 User Manual

NL17SH08
Single 2-Input AND Gate
The NL17SH08 is an advanced high speed CMOS 2input AND
gate fabricated with silicon gate CMOS technology.
buffer output which provides high noise immunity and stable output.
The NL17SH08 input structure provides protection when voltages up to 7.0 V are applied, regardless of the supply voltage. This allows the NL17SH08 to be used to interface 5.0 V circuits to
3.0 V circuits.
Features
High Speed: t
Low Power Dissipation: I
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
These are PbFree Devices
= 3.5 ns (Typ) at VCC = 5.0 V
PD
= 1.0 mA (Max) at TA = 25°C
CC
1
IN A
GND
2
V
5
CC
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MARKING DIAGRAM
SOT953
CASE 527AE
E = Specific Device Code M = Month Code
EM
1
PIN ASSIGNMENT
1
2
3IN B
4
5V
IN A
GND
OUT Y
CC
IN B
3
Figure 1. Pinout (Top View)
IN A
IN B
&
Figure 2. Logic Symbol
4
OUT Y
OUT Y
FUNCTION TABLE
Inputs Output
AB
L
L
H
H
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
L
H
L
H
Y
L
L
L
H
© Semiconductor Components Industries, LLC, 2011
August, 2011 Rev. 1
1 Publication Order Number:
NL17SH08/D
NL17SH08
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
OUT
I
I
OK
I
OUT
I
CC
T
STG
T
T
P
MSL Moisture Sensitivity Level 1
F
I
LATCHUP
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
V
V
OUT
T
t
r
DC Supply Voltage −0.5 to +7.0 V
CC
DC Input Voltage −0.5 to +7.0 V
IN
DC Output Voltage −0.5 to V
DC Input Diode Current −20 mA
IK
CC
DC Output Diode Current ±20 mA
DC Output Sink Current ±25 mA
DC Supply Current per Supply Pin 50 mA
Storage Temperature Range −65 to +150 °C
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
L
Junction Temperature Under Bias +150 °C
J
Power Dissipation in Still Air 50 mW
D
Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 @ 0.125 in
R
Latchup Performance Above VCC and Below GND at 125°C (Note 1) ±100 mA
DC Supply Voltage 2.0 5.5 V
CC
DC Input Voltage 0.0 5.5 V
IN
DC Output Voltage 0.0 V
Operating Temperature Range −55 +125 °C
A
, t
Input Rise and Fall Time VCC = 3.3 V ± 0.3 V
f
V
= 5.0 V ± 0.5 V
CC
0 0
+0.5 V
CC
100
ns/V
20
V
Device Junction Temperature versus Time to 0.1% Bond Failures
Junction
Temperature °C
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
Time, Hours Time, Years
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2
FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR
= 130 C°
J
T
J
J
T
T
= 110 C°
= 120 C°
1
NORMALIZED FAILURE RATE
1 10 100
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
C°
C°
= 80
= 90
= 100 C°
J
T
J
J
T
T
1000
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