ON Semiconductor NL17SG32 User Manual

NL17SG32

Single 2-Input OR Gate

The NL17SG32 MiniGatet is an advanced high−speed CMOS

2−input OR gate in ultra−small footprint.

The NL17SG32 input structures provides protection when voltages

up to 4.6 V are applied.

Features

• Wide Operating V

• High Speed: t

• Low Power Dissipation: I

• 4.6 V Overvoltage Tolerant (OVT) Input Pins

• Ultra−Small Packages

• These are Pb−Free and Halide−Free Devices

1

IN A

2

GND

Range: 0.9 V to 3.6 V

CC

= 2.4 ns (Typ) at VCC = 3.0 V, CL = 15 pF

PD

= 0.5 mA (Max) at TA = 25°C

CC

5

V

CC

IN B

IN A

1

2

5

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MARKING

DIAGRAMS

SOT−953

P5 SUFFIX

1

V

CC

1

CASE 527AE

UDFN6

1.0 x 1.0

CASE 517BX

UDFN6

1.45 x 1.0

CASE 517AQ

SC−88A

DF SUFFIX

CASE 419A

1

3 M

P

6 M

M

AU M G

M

G

IN B

IN A

IN B

GND

4

OUT Y

1

2

3

SOT−953 SC−88A

UDFN6

GND

3

6

V

5

NC

OUT Y

4

Figure 1. Pinouts (Top View)

IN A

IN B

≥ 1

Figure 2. Logic Symbol

CC

OUT Y

4

OUT Y

M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or position may vary

depending upon manufacturing location.

PIN ASSIGNMENT

SOT−953 SC−88A UDFN6

1

2

3 IN B

4

5V

6

IN A

GND

OUT Y

CC

IN B

IN A

GND

OUT Y

V

CC

IN A

IN B

GND

OUT Y

NC

V

CC

FUNCTION TABLE

A Input Y Output

L

H

B Input

L

H

L

H

L

H

March, 2019 − Rev. 8

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 5 of this data sheet.

1 Publication Order Number:

NL17SG32/D

NL17SG32

MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V

OUT

I

IK

I

OK

I

OUT

I

CC

I

GND

T

STG

T

MSL Moisture Sensitivity Level 1

F

V

ESD

I

LATCHUP

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.

2. Tested to EIA/JESD22−A114−A.

3. Tested to EIA/JESD22−A115−A.

4. Tested to EIA/JESD78.

DC Supply Voltage −0.5 to +5.5 V

DC Input Voltage −0.5 to +4.6 V

IN

DC Output Voltage Output at High or Low State

Power−Down Mode (V

CC

= 0 V)

−0.5 to V

−0.5 to +4.6

CC

DC Input Diode Current VIN < GND −20 mA

DC Output Diode Current V

< GND −20 mA

OUT

DC Output Source/Sink Current ±20 mA

DC Supply Current per Supply Pin ±20 mA

DC Ground Current per Ground Pin ±20 mA

Storage Temperature Range −65 to +150 °C

Lead Temperature, 1 mm from Case for 10 Seconds 260 °C

L

Junction Temperature Under Bias +150 °C

J

Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in

R

ESD Withstand Voltage Human Body Model (Note 2)

Machine Model (Note 3)

>2000

>200

Latchup Performance Above VCC and Below GND at 125°C (Note 4) ±100 mA

+0.5

V

RECOMMENDED OPERATING CONDITIONS

Symbol Characteristics Min Max Unit

V

CC

V

OUT

T

Dt / DV

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

Positive DC Supply Voltage 0.9 3.6 V

Digital Input Voltage 0.0 3.6 V

IN

Output Voltage Output at High or Low State

Power−Down Mode (V

Operating Temperature Range −55 +125 °C

A

CC

= 0 V)

0.0

Input Transition Rise or Fail Rate VCC = 3.3 V ± 0.3 V 0 10 ns/V

V

3.6

CC

V

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2

NL17SG32

DC ELECTRICAL CHARACTERISTICS

Symbol Parameter Conditions VCC (V)

V

OH

V

OL

I

IN

IH

IL

High-Level Input

Voltage

Low-Level Input

Voltage

High-Level

Output Voltage

Low-Level

Output Voltage

Input Leakage

Current

0.9 V

1.1 to 1.3 0.7xV

1.4 to 1.6 0.65xV

1.65 to 1.95 0.65xV

2.3 to 2.7 1.7 1.7

3.0 to 3.6 2.0 2.0

0.9 GND GND

1.1 to 1.3 0.3xV

1.4 to 1.6 0.35xV

1.65 to 1.95 0.35xV

2.3 to 2.7 0.7 0.7

3.0 to 3.6 0.8 0.8

VIN =

V

IH

V

IOH = −20 mA

or

IOH = -0.3 mA 1.1 to 1.3 0.75xV

IL

0.9 0.75 0.75

IOH = -1.7 mA 1.4 to 1.6 0.75xV

IOH = -3.0 mA 1.65 to 1.95 Vcc-0.45 Vcc-0.45

IOH = -4.0 mA 2.3 to 2.7 2.0 2.0

IOH = -8.0 mA 3.0 to 3.6 2.48 2.48

VIN =

V

IH

V

IOL = 20 mA

or

IOL = 1.1 mA 1.1 to 1.3 0.25xV

IL

0.9 to 3.6 0.1 0.1

IOL = 1.7 mA 1.4 to 1.6 0.25xV

IOL = 3.0 mA 1.65 to 1.95 0.45 0.45

IOL = 4.0 mA 2.3 to 2.7 0.4 0.4

IOL = 8.0 mA 3.0 to 3.6 0.4 0.4

0 ≤ VIN ≤ 3.6 V 0 to 3.6 $0.1 $1.0

TA = 255C

TA =

-555C to +1255C

Min Max Min Max

CC

V

CC

0.7xV

0.65xV

0.75xV

CC

0.3xV

0.35xV

CC

0.25xV

Unit

V

CC

V

CC

mA

I

CC

Quiescent

Supply Current

VIN = VCC or GND 3.6 0.5 10.0

mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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NL17SG32

AC ELECTRICAL CHARACTERISTICS (Input t

Symbol Parameter Test Condition VCC (V)

r

= t

= 3.0 ns)

f

TA = 255 C

TA =

-555C to +1255C

Min Typ Max Min Max Unit

t

,

PLH

t

PHL

Propagation Delay,

A or B to Y

CL = 10 pF,

= 1 MW

R

L

0.9 - 12.2 14.4 - 18.0

1.1 to 1.3 - 8.8 12.4 - 16.2

ns

1.4 to 1.6 - 5.0 8.5 - 10.0

1.65 to 1.95 - 3.6 6.2 - 6.7

2.3 to 2.7 - 2.7 3.9 - 4.4

3.0 to 3.6 - 2.1 3.1 - 3.7

CL = 15 pF,

= 1 MW

R

L

0.9 - 13.0 16.0 - 18.0

1.1 to 1.3 - 7.8 12.0 - 16.0

ns

1.4 to 1.6 - 5.9 9.3 - 11.2

1.65 to 1.95 - 4.5 6.9 - 7.1

2.3 to 2.7 - 3.0 4.4 - 5.0

3.0 to 3.6 - 2.4 3.4 - 3.9

CL = 30 pF,

= 1 MW

R

L

0.9 - 14.0 17.2 - 20.0

1.1 to 1.3 - 11.0 14.1 - 17.8

ns

1.4 to 1.6 - 8.0 12.1 - 15.9

1.65 to 1.95 - 6.0 9.2 - 9.6

2.3 to 2.7 - 3.9 5.7 - 6.1

3.0 to 3.6 - 3.0 4.4 - 4.8

C

IN

C

PD

Input Capacitance 0 to 3.6 3 - - - pF

Power Dissipation

Capacitance (Note 5)

f = 10 MHz 0.9 to 3.6 - 4 - - - pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

5. C

PD

Average operating current can be obtained by the equation: I power consumption; P

= CPD  V

D

2

 fin + ICC  VCC.

CC

= CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic

)

CC(OPR

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