ON Semiconductor NJL4281D, NJL4281DG, NJL4302D, NJL4302DG Service Manual

NJL4281D (NPN)
NJL4302D (PNP)

Complementary
ThermalTrakt Transistors

The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier
applications. They can also be used in other applications as transistor
die protection devices.

Features

• Thermally Matched Bias Diode

• Instant Thermal Bias Tracking

• Absolute Thermal Integrity

• High Safe Operating Area

• Pb−Free Packages are Available*

Benefits

• Eliminates Thermal Equilibrium Lag Time and Bias Trimming

• Superior Sound Quality Through Improved Dynamic Temperature

Response

• Significantly Improved Bias Stability

• Simplified Assembly

♦ Reduced Labor Costs
♦ Reduced Component Count

• High Reliability

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BIPOLAR POWER

TRANSISTORS

15 AMP, 350 VOLT, 230 WATT

TO−264, 5 LEAD

CASE 340AA

STYLE 1

MARKING DIAGRAM

NJLxxxxDG

AYYWW

Thermal Trak

SCHEMATIC

Applications

• High−End Consumer Audio Products

♦ Home Amplifiers
♦ Home Receivers

• Professional Audio Amplifiers

♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

NJLxxxxD =Device Code

G = Pb−Free Package
A =Assembly Location
YY =Year
WW =Work Week

ORDERING INFORMATION

Device Package Shipping

NJL4281D TO−264 25 Units / Rail
NJL4281DG

NJL4302D
NJL4302DG

xxxx = 4281 or 4302

TO−264

(Pb−Free)

TO−264
TO−264

(Pb−Free)

25 Units / Rail

25 Units / Rail

25 Units / Rail

© Semiconductor Components Industries, LLC, 2006

June, 2006 − Rev. 2

1 Publication Order Number:

NJL4281D/D

NJL4281D (NPN) NJL4302D (PNP)

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector−Emitter Voltage − 1.5 V V

CEO
CBO
EBO
CEX

Collector Current − Continuous

− Peak (Note 1)
Base Current − Continuous I
Total Power Dissipation @ TC = 25°C

P

Derate Above 25°C
Operating and Storage Junction Temperature Range TJ, T
DC Blocking Voltage V
Average Rectified Forward Current I

F(AV)

I

C

B

D

stg

R

350 Vdc
350 Vdc

5 Vdc

350 Vdc

15
30

1.5 Adc

230

1.84

− 65 to +150
200 V

1.0 A

Adc

W

W/°C

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

R

q

JC

0.54 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

ATTRIBUTES

Characteristic Value

ESD Protection Human Body Model

Machine Model

Flammability Rating UL 94 V−0 @ 0.125 in

>8000 V

> 400 V

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2

NJL4281D (NPN) NJL4302D (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector Emitter Sustaining Voltage

(IC = 50 mA, IB = 0)

Collector Cut−off Current

(VCE = 200 V, IB = 0)

Collector Cutoff Current

(VCB = 350 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased

(VCE = 50 Vdc, t = 1.0 s (non−repetitive)
(VCE = 100 Vdc, t = 1.0 s (non−repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 3.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
(IC = 8.0 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 0.8 Adc)

Emitter−Base Saturation Voltage

(IC = 8.0 Adc, IB = 0.8 A)

Base−Emitter ON Voltage

(IC = 8.0 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1.0 Adc, VCE = 5.0 Vdc, f

= 1.0 MHz)

test

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

= 1.0 MHz)

test

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)

Maximum Reverse Recovery Time

(iF = 1.0 A, di/dt = 50 A/ms)

2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

V

CE(sus)

I

CEO

I

CBO

I

EBO

I

S/b

h

V

CE(sat)

V

BE(sat)

V

BE(on)

C

v

350 − Vdc

− 100

mAdc

mAdc

− 50
mAdc

− 5.0

Adc

FE

4.5

1.0

80
80
80
80
40
10

−

−

−
250
250
250
250

−

−
Vdc

− 1.0
Vdc

− 1.4
Vdc

− 1.5

f

T

ob

F

35 −

− 600

1.1

MHz

pF

V

0.93

i

R

10

mA

100

t

rr

100 ns

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