ON Semiconductor NJL3281D, NJL3281DG, NJL1302D, NJL1302DG Service Manual

NJL3281D (NPN)
NJL1302D (PNP)

Complementary
ThermalTrakt Transistors

The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier
applications. They can also be used in other applications as transistor
die protection devices.

Features

• Thermally Matched Bias Diode

• Instant Thermal Bias Tracking

• Absolute Thermal Integrity

• High Safe Operating Area

• Pb−Free Packages are Available*

Benefits

• Eliminates Thermal Equilibrium Lag Time and Bias Trimming

• Superior Sound Quality Through Improved Dynamic Temperature

Response

• Significantly Improved Bias Stability

• Simplified Assembly

♦ Reduced Labor Costs
♦ Reduced Component Count

• High Reliability

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BIPOLAR POWER

TRANSISTORS

15 AMP, 260 VOLT, 200 WATT

TO−264, 5 LEAD

CASE 340AA

STYLE 1

MARKING DIAGRAM

NJLxxxxDG

AYYWW

Thermal Trak

SCHEMATIC

Applications

• High−End Consumer Audio Products

♦ Home Amplifiers
♦ Home Receivers

• Professional Audio Amplifiers

♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

NJLxxxxD =Device Code

G = Pb−Free Package
A =Assembly Location
YY =Year
WW =Work Week

ORDERING INFORMATION

Device Package Shipping

NJL3281D TO−264 25 Units / Rail
NJL3281DG

NJL1302D
NJL1302DG

xxxx = 3281 or 1302

TO−264

(Pb−Free)

TO−264
TO−264

(Pb−Free)

25 Units / Rail

25 Units / Rail

25 Units / Rail

© Semiconductor Components Industries, LLC, 2006

June, 2006 − Rev. 2

1 Publication Order Number:

NJL3281D/D

NJL3281D (NPN) NJL1302D (PNP)

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector−Emitter Voltage − 1.5 V V

CEO
CBO
EBO
CEX

Collector Current − Continuous

− Peak (Note 1)
Base Current − Continuous I
Total Power Dissipation @ TC = 25°C

P

Derate Above 25°C
Operating and Storage Junction Temperature Range TJ, T
DC Blocking Voltage V
Average Rectified Forward Current I

F(AV)

I

C

B

D

stg

R

260 Vdc
260 Vdc

5 Vdc

260 Vdc

15
25

1.5 Adc

200

1.43

− 65 to +150
200 V

1.0 A

Adc

W

W/°C

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

R

q

JC

0.625 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

ATTRIBUTES

Characteristic Value

ESD Protection Human Body Model

Machine Model

Flammability Rating UL 94 V−0 @ 0.125 in

>8000 V

> 400 V

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2

NJL3281D (NPN) NJL1302D (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

Collector Cutoff Current

(VCB = 260 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = 500 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)

Collector−Emitter Saturation Voltage

(IC = 10 Adc, IB = 1 Adc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1 Adc, VCE = 5 Vdc, f

= 1 MHz)

test

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

= 1 MHz)

test

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)

Maximum Reverse Recovery Time

(iF = 1.0 A, di/dt = 50 A/ms)

2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

V

CEO(sus)

I

CBO

I

EBO

h

V

CE(sat)

f

C

v

i

t

FE

T

R

rr

260 −

Vdc

mAdc

− 50
mAdc

− 5

75
75
75
75
45

150
150
150
150

−
Vdc

− 3

MHz

30 −

ob

F

− 600

1.1

pF

V

0.93
mA

10

100
100 ns

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3

NJL3281D (NPN) NJL1302D (PNP)

h

TYPICAL CHARACTERISTICS

PNP NJL1302D

50

40

30

20

10

TJ = 25°C
f

= 1 MHz

T

f, CURRENT BANDWIDTH PRODUCT (MHz)

test

0

0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)

5 V

Figure 1. Typical Current Gain

Bandwidth Product

PNP NJL1302D NPN NJL3281D

1000

VCE = 10 V

NPN NJL3281D

60

50

5 V

40

30

20

TJ = 25°C

10

f

= 1 MHz

T

f, CURRENT BANDWIDTH PRODUCT (MHz)

test

0

0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain

Bandwidth Product

1000

VCE = 10 V

TJ = 100°C

100

, DC CURRENT GAIN

FE

VCE = 5 V

10

25°C

−25 °C

IC, COLLECTOR CURRENT (AMPS)

, DC CURRENT GAIN

h

100101.00.1

TJ = 100°C

100

FE

VCE = 5 V

10

IC, COLLECTOR CURRENT (AMPS)

25°C

−25 °C

100101.00.1

Figure 3. DC Current Gain, VCE = 5 V Figure 4. DC Current Gain, VCE = 5 V

PNP NJL1302D NPN NJL3281D

, COLLECTOR CURRENT (A)
I

45

40

35

30

25

20

15

10

C

5.0

0

5.0010152025

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.5 A

IB = 2 A

1 A

0.5 A

TJ = 25°C

, COLLECTOR CURRENT (A)
I

45

40

35

30

25

20

15

10

C

5.0

0

5.0010152025

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.5 A

IB = 2 A

1 A

0.5 A

TJ = 25°C

Figure 5. Typical Output Characteristics

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Figure 6. Typical Output Characteristics

4

TYPICAL CHARACTERISTICS

3.0

NJL3281D (NPN) NJL1302D (PNP)

PNP NJL1302D NPN NJL3281D

2.5

SATURATION VOLTAGE (VOLTS)

2.5

2.0

1.5

1.0

0.5

1.0

0

TJ = 25°C
IC/IB = 10

V

BE(sat)

V

CE(sat)

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Typical Saturation Voltages

SATURATION VOLTAGE (VOLTS)

100101.00.1

2.0

1.5

1.0

0.5

0

TJ = 25°C
I

= 10

C/IB

V

BE(sat)

V

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Typical Saturation Voltages

CE(sat)

100101.00.1

PNP NJL1302D NPN NJL3281D

10

TJ = 25°C

10

TJ = 25°C

VCE = 5 V (DASHED)

VCE = 20 V (SOLID)

1.0

VCE = 5 V (DASHED)

VCE = 20 V (SOLID)

, BASE−EMITTER VOLTAGE (VOLTS)

BE(on)

V

0.1

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Base−Emitter Voltage

, BASE−EMITTER VOLTAGE (VOLTS)

BE(on)

V

100101.00.1

0.1

100101.00.1

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Typical Base−Emitter Voltage

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5

, COLLECTOR CURRENT (AMPS)

f

y

e

r

s

s,

d

d

TYPICAL CHARACTERISTICS

PNP NJL1302D NPN NJL3281D

I

, REVERSE CURRENT (

A)

.1

C

I

NJL3281D (NPN) NJL1302D (PNP)

100

10 ms

10

1 sec

1.0

250 ms

0.1

100101.0 1000

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 11. Active Region Safe Operating Area

50 ms

There are two limitations on the power handling ability o
a transistor; average junction temperature and secondar
breakdown. Safe operating area curves indicate IC − V
limits of the transistor that must be observed for reliabl
operation; i.e., the transistor must not be subjected to greate
dissipation than the curves indicate.

The data of Figure 11 is based on T

= 150°C; TC i

J(pk)

variable depending on conditions. At high case temperature
thermal limitations will reduce the power than can be handle
to values less than the limitations imposed by secon
breakdown.

CE

10000

1000

C, CAPACITANCE (pF)

100

10

m

1

0.1

0.01

0.001

R

0.0001

C

ib

C

ob

TJ = 25°C
f

= 1 MHz

test

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. NJL1302D Typical Capacitance

TJ = 100°C

10000

1000

C, CAPACITANCE (pF)

TJ = 25°C
f

= 1 MHz

test

100101.00.1

100

Figure 13. NJL3281D Typical Capacitance

10

1

TJ = 25°C

TJ = −25°C

0

VR, REVERSE VOLTAGE (VOLTS)

80604020 200

100 120

140 160 180

Figure 14. Typical Reverse Current

0.1

0.01

, FORWARD CURRENT (A)

F

I

0.001

100°C

0.3

Figure 15. Typical Forward Voltage

C

ib

C

ob

VR, REVERSE VOLTAGE (VOLTS)

25°C

VF, VOLTAGE (VOLTS)

−25°C

0.70.60.50.4 0.8

100101.00.1

10.9

1

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6

NJL3281D (NPN) NJL1302D (PNP)

PACKAGE DIMENSIONS

TO−264, 5 LEAD

CASE 340AA−01

ISSUE O

−T−

Y

−B−

Q

0.25 (0.010) MTB

M

C

E

U

N

A

R

12 3

45

L

SW

P

K

M

F

5 PL

G

D

5 PL

0.25 (0.010) MTB

S

J
H

W

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS

DIM MIN NOM MAX

A 25.857 25.984 26.111
B 19.761 19.888 20.015
C 4.928 5.055 5.182
D 1.219 BSC
E 2.032 2.108 2.184

1.981 BSC

F
G 3.81 BSC
H 2.667 2.718 2.769
J 0.584 BSC
K 20.422 20.549 20.676
L 11.28 REF

0 −−−

M

_

N 4.57 REF
P 2.259 2.386 2.513
Q 3.480 BSC
R 2.54 REF
S

0 −−−

_

U 6.17 REF

W

0 −−−

_

Y 2.388 BSC

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

4. ANODE

5. CATHODE

8 _0
6 _0

7 _0

INCHES

MIN NOM MAX

1.018 1.023 1.028

0.778 0.783 0.788

0.194 0.199 0.204

0.0480 BSC

0.0800 0.0830 0.0860

0.0780 BSC

0.150 BSC

0.1050 0.1070 0.1090

0.0230 BSC

0.804 0.809

0.444 REF

_

0.180 REF

0.0889 0.0939 0.0989

0.1370 BSC

0.100 REF

_

0.243 REF

_

0.0940 BSC

−−−

−−−

−−−

0.814
7

8

6

_

_

_

S

ThermalTrak is a trademark of Semiconductor Components Industries, LLC (SCILLC).

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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For additional information, please contact your local
Sales Representative

NJL3281D/D

7