ON Semiconductor NIF62514 Technical data

NIF62514

Preferred Device

Self-Protected FET
with Temperature and
Current Limit

HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor's latest MOSFET technology process to
achieve the lowest possible on-resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain-to-Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate-to-Source Clamp.

Features

•Current Limitation

•Thermal Shutdown with Automatic Restart

•Short Circuit Protection

•Low R

•I

•Avalanche Energy Specified

•Slew Rate Control for Low Noise Switching

•Overvoltage Clamped Protection

•Pb-Free Packages are Available

DS(on)

Specified at Elevated Temperature

DSS

Gate
Input

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6.0 AMPERES*

40 VOLTS CLAMPED

R

DS(on)

R

G

ESD Protection

Temperature

Limit

= 90 mW

Overvoltage

Protection

Current

Limit

Drain

Current

Sense

Source

M

PWR

MOSFET MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain-to-Source Voltage Internally Clamped V

Drain-to-Gate Voltage Internally Clamped

= 1.0 MW)

(R

GS

Gate-to-Source Voltage V

Drain Current

- Continuous @ T

- Continuous @ TA = 100°C

- Pulsed (t

Total Power Dissipation @ TA = 25°C (Note 1)

@ T
@ TA = 25°C (Note 3)

Thermal Resistance, Junction-to-Tab

Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)

Single Pulse Drain-to-Source Avalanche Energy

(V

DD

VDS = 40 Vdc, IL = 2.8 Apk, L = 80 mH,
R

G

Operating and Storage Temperature Range TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Mounted onto min pad board.

2. Mounted onto 1″ pad board.

3. Mounted onto large heatsink.

p

= 25°C (Note 2)

A

= 25 Vdc, VGS = 5.0 Vdc,

= 25 W)

A

≤ 10 ms)

= 25°C

= 25°C unless otherwise noted)

J

JT

stg

40 Vdc

40 Vdc

"16 Vdc

Internally

Limited

1.1

1.73

8.93

14

114

72.3

300 mJ

-55 to
150

V

I

R
R
R

E

DSS

DGR

GS

I

D

I

D

DM

P

D

q

q

JA

q

JA

AS

W

°C/W

°C

4

1

2

3

SOT-223

CASE 318E

STYLE 3

MARKING DIAGRAM

GATE

DRAIN

SOURCE

A = Assembly Location
Y = Year
W = Work Week
62514 = Specific Device Code
G = Pb-Free Package

(Note: Microdot may be in either location)

1

4

62514G

AYW

2

G

3

DRAIN

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

*Limited by the current limit circuit.

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 6

1 Publication Order Number:

NIF62514/D

NIF62514

MOSFET ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

J

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Clamped Breakdown Voltage

= 0 Vdc, ID = 250 mAdc)

(V

GS

= 0 Vdc, ID = 250 mAdc, TJ = 150°C)

(V

GS

Zero Gate Voltage Drain Current

(V

= 32 Vdc, VGS = 0 Vdc)

DS

(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate Input Current

(V

= 5.0 Vdc, VDS = 0 Vdc)

GS

(VGS = -5.0 Vdc, VDS = 0 Vdc)

V

(BR)DSS

I

DSS

I

GSS

42
42

46
45

-

-

-

-

0.5

2.0

50

550

50
50

2.0
10

100

1000

ON CHARACTERISTICS

Gate Threshold Voltage

= VGS, ID = 150 mAdc)

(V

DS

Threshold Temperature Coefficient (Negative)

Static Drain-to-Source On-Resistance (Note 4)

(V

= 10 Vdc, ID = 1.4 Adc, TJ @ 25°C)

GS

(VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 150°C)

Static Drain-to-Source On-Resistance (Note 4)

(V

= 5.0 Vdc, ID = 1.4 Adc, TJ @ 25°C)

GS

(VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 150°C)

Source-Drain Forward On Voltage

(I

= 7 A, VGS = 0 V)

S

V

GS(th)

R

DS(on)

R

DS(on)

V

SD

1.0

-

-

-

-

-

1.7

4.0

90

165

105
185

2.0

6.0

100
190

120
210

- 1.05 - V

SWITCHING CHARACTERISTICS

Turn-on Delay Time 10% Vin to 10% I

RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V

Turn-on Rise Time 10% ID to 90% I

RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V

Turn-off Delay Time 90% Vin to 90% I

RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V

Turn-off Fall Time 90% ID to 10% I

RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V

Slew-Rate On

RL = 4.7 W,

Vin = 0 to 10 V, VDD = 12 V

Slew-Rate Off

RL = 4.7 W,

V

= 10 to 0 V, VDD = 12 V

in

D

D

D

D

t

d(on)

t

rise

t

d(off)

t

fall

-dVDS/dt

dVDS/dt

- 4.0 8.0

- 11 20

- 32 50

- 27 50

- 1.5 2.5

on

off

- 0.6 1.0

SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Current Limit

Current Limit (VGS = 10 Vdc)

Temperature Limit (Turn-off) VGS = 5.0 Vdc T

Temperature Limit (Circuit Reset) VGS = 5.0 Vdc T

Temperature Limit (Turn-off) VGS = 10 Vdc T

Temperature Limit (Circuit Reset) VGS = 10 Vdc T

(VGS = 5.0 Vdc)

(V

= 5.0 Vdc, TJ = 150°C)

GS

(V

= 10 Vdc, TJ = 150°C)

GS

I

LIM

I

LIM

LIM(off)

LIM(on)

LIM(off)

LIM(on)

6.0

3.0

7.0

4.0

9.0

5.0

10.5

7.5

11

8.0

13
10

150 175 200 °C

135 160 185 °C

150 155 185 °C

130 140 170 °C

ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Electro-Static Discharge Capability

Human Body Model (HBM) ESD 4000 - - V

Electro-Static Discharge Capability Machine Model (MM) ESD 400 - - V

4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.

Vdc

mAdc

mAdc

Vdc

mV/°C

mW

mW

ms

ms

ms

ms

ms

ms

Adc

Adc

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