ON Semiconductor NDS331N User Manual

N-Channel Logic Level
Enhancement Mode Field
Effect Transistor

NDS331N

General Description

These N−Channel logic level enhancement mode power field effect
transistors are produced using ON Semiconductor’s proprietary, high
cell density, DMOS technology. This very high density process is
especially tailored to minimize on−state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMCIA cards, and other battery
powered circuits where fast switching, and low in−line power loss are
needed in a very small outline surface mount package.

Features

• 1.3 A, 20 V

♦ R
♦ R

= 0.21  @ VGS = 2.7 V

DS(on)

= 0.16  @ VGS = 4.5 V

DS(on)

• Industry Standard Outline SOT−23 Surface Mount Package Using

Poprietary SUPERSOTt−3 Design for Superior Thermal and
Electrical Capabilities

• High Density Cell Design for Extremely Low R

DS(on)

• Exceptional On−Resistance and Maximum DC Current Capability

• This is a Pb−Free Device

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D

G

S

SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9

CASE 527AG

MARKING DIAGRAM

&Y

331 &G

&Y = Binary Calendar Year Coding Scheme
331 = Specific Device Code
&G = Date Code

D

© Semiconductor Components Industries, LLC, 2017

April, 2021 − Rev. 6

G

ORDERING INFORMATION

Device Package Shipping

NDS331N SOT−23−3/

SUPERSOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1 Publication Order Number:

S

†

3000 /

Tape & Reel

NDS331N/D

NDS331N

ABSOLUTE MAXIMUM RATINGS T

Symbol

V

V

DSS

GSS

I

D

Drain−Source Voltage 20 V

Gate−Source Voltage − Continuous ±8 V

Maximum Drain Current – Continuous (Note 1a) 1.3

= 25°C unless otherwise noted.

A

Parameter Ratings Unit

A

Maximum Drain Current – Pulsed 10

P

Maximum Power Dissipation (Note 1a) 0.5

D

W

Maximum Power Dissipation (Note 1b) 0.46

TJ, T

Operating and Storage Temperature Range −55 to +150 °C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol Parameter Ratings Unit

R



R



1. R



JA

mounting surface of the drain pins. R

(t) +

P

D

Typical R

Thermal Resistance, Junction−to−Ambient (Note 1a) 250 °C/W

JA

Thermal Resistance, Junction−to−Case (Note 1) 75 °C/W

JC

is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

is guaranteed by design while R



JC

T

* T

J

R

(t)

JA

using the board layouts shown below on 4.5″x5″ FR−4 PCB in a still air environment:



JA

a) 250°C/W when mounted on a 0.02 in

T

A

+

* T

J

A

R

) R

JC

CA

2

+ I

(t) R

DS(on)@T

D

(t)

2

pad

J

of 2oz copper.

is determined by the user’s board design.



CA

b) 270°C/W when mounted on a 0.001 in2 pad
of 2oz copper.

Scale 1:1 on letter size paper

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NDS331N

ELECTRICAL CHARACTERISTICS T

Symbol

Parameter Test Conditions Min Typ Max Unit

= 25°C unless otherwise noted.

A

OFF CHARACTERISTICS

BV

I

DSS

Drain–Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 A

VDS = 16 V, VGS = 0 V − − 1 A

20 − − V

VDS = 16 V, VGS = 0 V, TJ = 125°C − − 10

I

GSSF

I

GSSR

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V − − 100 nA

Gate–Body Leakage, Reverse VGS = −8 V, VDS = 0 V − − −100 nA

ON CHARACTERISTICS (Note 2)

V

GS(th)

R

DS(on)

Gate Threshold Voltage

Static Drain–Source On–Resistance

VDS = VGS, ID = 250 A

VDS = VGS, ID = 250 A, TJ = 125°C

0.5 0.7 1

0.3 0.53 0.8

VGS = 2.7 V, ID = 1.3 A − 0.15 0.21 

V

VGS = 2.7 V, ID = 1.3 A, TJ = 125°C − 0.24 0.4

VGS = 4.5 V, ID = 1.5 A − 0.11 0.16

I

D(on)

On–State Drain Current

VGS = 2.7 V, VDS = 5 V 3 − −

A

VGS = 4.5 V, VDS = 5 V 4 − −

g

Forward Transconductance VDS = 5 V, ID = 1.3 A − 3.5 − S

FS

DYNAMIC CHARACTERISTICS

C

C

C

Input Capacitance

iss

Output Capacitance − 85 − pF

oss

Reverse Transfer Capacitance − 28 − pF

rss

VDS = 10 V, VGS = 0 V, f = 1.0 MHz

− 162 − pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

t

t

D(off)

t

Q

Q

Q

Turn–On Delay Time

Turn–On Rise Time − 25 40 ns

r

Turn–Off Delay Time − 10 20 ns

Turn–Off Fall Time − 5 20 ns

f

Total Gate Charge

g

Gate–Source Charge − 0.3 − nC

gs

Gate–Drain Charge − 1 − nC

gd

VDD = 5 V, ID = 1 A, VGS = 5 V,

= 6 

R

GEN

VDS = 5 V, ID = 1.3 A, VGS = 4.5 V

− 5 20 ns

− 3.5 5 nC

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain–Source Diode Forward Current − − 0.42 A

I

S

I

SM

V

Maximum Pulsed Drain−Source Diode Forward Current − − 10 A

Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) − 0.8 1.2 V

SD

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

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