ON Semiconductor NDF06N60Z User Manual

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NDF06N60Z

Power MOSFET, N-Channel,

00 V, 1.2 W

Features

• Low ON Resistance

• Low Gate Charge

• ESD Diode−Protected Gate

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

ABSOLUTE MAXIMUM RATINGS (T

Rating

Drain−to−Source Voltage V

Continuous Drain Current, R

Continuous Drain Current

= 100°C, R

Pulsed Drain Current,

@ 10 V

Power Dissipation, R

Gate−to−Source Voltage V

Single Pulse Avalanche Energy, L = 6.3 mH,

= 6.0 A

ESD (HBM) (JESD22−A114) V

RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, T

= 25°C) (Figure 13)

Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns

MOSFET dV/dt dV/dt 60 V/ns

Continuous Source Current (Body Diode) I

Maximum Temperature for Soldering Leads T

Operating Junction and Storage Temperature Range

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Limited by maximum junction temperature = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BV

2. I

(Note 1)

= 25°C unless otherwise noted)

Symbol Value Unit

stg

600 V

7.1 A

4.5 A

28 A

35 W

±30 V

113 mJ

3000 V

4500 V

6.0 A

260 °C

−55 to 150

, TJ = +150°C

DSS

TJ, T

esd

ISO

°C

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DSS

(@ T

650 V

G (1)

Jmax

N−Channel

D (2)

NDF06N60ZG,

NDF06N60ZH

TO−220FP

CASE 221AH

DS(ON)

S (3)

(MAX) @ 3 A

1.2 Ω

ORDERING AND MARKING INFORMATION

See detailed ordering, marking and shipping information on page 6 of this data sheet.

January, 2015 − Rev. 8

1 Publication Order Number:

NDF06N60Z/D

THERMAL RESISTANCE

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient Steady State (Note 3)

3. Insertion mounted

NDF06N60Z

3.6

°C/W

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

Test Conditions Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA BV

Breakdown Voltage Temperature Co-

efficient

Drain−to−Source Leakage Current

Reference to 25°C,

= 1 mA

VDS = 600 V, VGS = 0 V

DBV

25°C

150°C 50

Gate−to−Source Forward Leakage VGS = ±20 V I

DSS

GSS

DSS

600 V

0.6 V/°C

1 mA

±10

ON CHARACTERISTICS (Note 4)

Static Drain−to−Source

VGS = 10 V, ID = 3.0 A R

DS(on)

0.98 1.2

On−Resistance

Gate Threshold Voltage

VDS = VGS, ID = 100 mA

Forward Transconductance VDS = 15 V, ID = 3.0 A g

GS(th)

3.0 3.9 4.5 V

5.0 S

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 5)

Output Capacitance (Note 5) C

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

iss

oss

rss

738 923 1107

90 106 125

15 23 30

(Note 5)

Total Gate Charge (Note 5)

Gate−to−Source Charge (Note 5) Q

Gate−to−Drain (“Miller”) Charge

(Note 5)

VDD = 300 V, ID = 6.0 A,

= 10 V

Plateau Voltage V

Gate Resistance R

15.5 31 47

3 6.3 9.5

8 17 24.5

6.4 V

3.2

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

= 300 V, ID = 6.0 A,

= 10 V, RG = 5 Ω

Fall Time t

d(on)

d(off)

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)

Diode Forward Voltage IS = 6.0 A, VGS = 0 V V

Reverse Recovery Time

Reverse Recovery Charge Q

VGS = 0 V, VDD = 30 V

= 6.0 A, di/dt = 100 A/ms

338 ns

2.0

1.6 V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

5. Guaranteed by design.

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NDF06N60Z

TYPICAL CHARACTERISTICS

TJ = 25°C

, DRAIN CURRENT (A)

VGS = 15 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

1.5

10 V

7 V

6.8 V

ID = 3 A

= 25°C

6.6 V

6.4 V

6.2 V

6.0 V

5.8 V

5.6 V

, DRAIN CURRENT (A)

25151050

1.75

1.5

1.25

VDS ≥ 30 V

TJ = 25°C

TJ = 150°C

VGS = 10 V

TJ = −55°C

TJ = 25°C

87543

0.5

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

Figure 3. On−Resistance vs. V

2.6

ID = 3 A

= 10 V

2.2

1.8

1.4

1.0

, DRAIN−TO−SOURCE RES-

ISTANCE (NORMALIZED)

0.6

DS(on)

0.2

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

0.75

, DRAIN−TO−SOURCE RESISTANCE (W)

9871065

VGS (V) ID, DRAIN CURRENT (A)

DS(on)

0.5

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10,000

, LEAKAGE (nA)

DSS

15012510075250−25−50

1000

100

VGS = 0 V

TJ = 150°C

TJ = 100°C

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

106212840

500

6004003002001000

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NDF06N60Z

TYPICAL CHARACTERISTICS

2000

1500

1000

500

C, CAPACITANCE (pF)

1000

VDD = 300 V I V

100

t, TIME (ns)

VGS = 0 V

= 25°C

f = 1 MHz

iss

Qgs

oss

rss

200150100500

, GATE−TO−SOURCE VOLTAGE (V)

Qgd

VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

= 6 A

= 10 V

d(off)

d(on)

, SOURCE CURRENT (A)

VGS = 0 V TJ = 25°C

TJ = 25°C

= 6 A

400

, DRAIN−TO−SOURCE VOLTAGE (V)

300

200

100

353025201050

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

100

VGS ≤ 30 V Single Pulse T

= 25°C

0.1

, DRAIN CURRENT (A)

0.01 1

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area for NDF06N60Z

100101

10 ms

Limit

DS(on)

Thermal Limit Package Limit

100 ms

1 ms

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

10 ms

1000100100.1

0.90.80.7 1.00.60.50.4

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1.0

R(t) (C/W)

0.1

NDF06N60Z

TYPICAL CHARACTERISTICS

50% (DUTY CYCLE)

20% 10%

5.0%

2.0%

1.0%

0.01

SINGLE PULSE

0.0001 0.001 0.01 1.0 10 1000.000001

PULSE TIME (s)

0.10.00001

Figure 12. Thermal Impedance for NDF06N60Z

LEADS

HEATSINK

0.110″ MIN

Figure 13. Mounting Position for Isolation Test

Measurement made between leads and heatsink with all leads shorted together.

*For additional mounting information, please download the ON Semiconductor

Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

= 3.6°C/W

Steady State

1000

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NDF06N60Z

ORDERING INFORMATION

Order Number Package Shipping

NDF06N60ZG TO−220FP

(Pb−Free, Halogen−Free)

NDF06N60ZH TO−220FP

(Pb−Free, Halogen−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

50 Units / Rail

MARKING DIAGRAMS

NDF06N60ZG

NDF06N60ZH

AYWW

Gate Source

†

Drain

TO−220FP

A = Location Code Y = Year WW = Work Week G, H = Pb−Free, Halogen−Free Package

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−220 FULLPACK, 3−LEAD

CASE 221AH

ISSUE F

DATE 30 SEP 2014

SCALE 1:1

E/2

123

0.14

0.25

FRONT VIEW

SECTION D−D

NOTE 6

AAB

NOTE 6

SEATING

PLANE

NOTE 3

SIDE VIEW

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR UNCONTROLLED IN THIS AREA.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA SURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.

5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.

6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES.

MILLIMETERS

DIM MIN MAX

A 4.30 4.70 A1 2.50 2.90 A2 2.50 2.90

b 0.54 0.84

b2 1.10 1.40

c 0.49 0.79

D 14.70 15.30

E 9.70 10.30

2.54 BSC

H1 6.60 7.10

L 12.50 14.73

L1 --- 2.80

P 3.00 3.40

Q 2.80 3.20

GENERIC

MARKING DIAGRAM*

XXXXXXXXX

AWLYWWG

SECTION A−A

ALTERNATE CONSTRUCTION

A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week

STYLE 1:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

STYLE 2:

PIN 1. CATHODE

2. ANODE

3. GATE

G = Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON52577E

TO−220 FULLPACK, 3−LEAD

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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ON Semiconductor NDF06N60Z User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual