ON Semiconductor NDF06N60Z User Manual

NDF06N60Z

Power MOSFET, N-Channel,

00 V, 1.2 W

6

Features

• Low ON Resistance

• Low Gate Charge

• ESD Diode−Protected Gate

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

ABSOLUTE MAXIMUM RATINGS (T

Rating

Drain−to−Source Voltage V

Continuous Drain Current, R

Continuous Drain Current

T

= 100°C, R

A

Pulsed Drain Current,

V

@ 10 V

GS

Power Dissipation, R

Gate−to−Source Voltage V

Single Pulse Avalanche Energy, L = 6.3 mH,

I

= 6.0 A

D

ESD (HBM) (JESD22−A114) V

RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, T

= 25°C) (Figure 13)

A

Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns

MOSFET dV/dt dV/dt 60 V/ns

Continuous Source Current (Body Diode) I

Maximum Temperature for Soldering Leads T

Operating Junction and Storage Temperature Range

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Limited by maximum junction temperature = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BV

2. I

SD

(Note 1)

q

JC

q

JC

(Note 1)

q

JC

= 25°C unless otherwise noted)

C

Symbol Value Unit

stg

600 V

7.1 A

4.5 A

28 A

35 W

±30 V

113 mJ

3000 V

4500 V

6.0 A

260 °C

−55 to 150

, TJ = +150°C

DSS

I

DM

P

E

V

TJ, T

D

GS

AS

esd

ISO

S

L

°C

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V

DSS

(@ T

650 V

G (1)

)R

Jmax

N−Channel

D (2)

1

2

3

NDF06N60ZG,

NDF06N60ZH

TO−220FP

CASE 221AH

DS(ON)

S (3)

(MAX) @ 3 A

1.2 Ω

ORDERING AND MARKING INFORMATION

See detailed ordering, marking and shipping information on page 6 of this data sheet.

January, 2015 − Rev. 8

1 Publication Order Number:

NDF06N60Z/D

THERMAL RESISTANCE

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient Steady State (Note 3)

3. Insertion mounted

NDF06N60Z

R

q

JC

R

q

JA

3.6

50

°C/W

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

J

Test Conditions Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA BV

Breakdown Voltage Temperature Co-

efficient

Drain−to−Source Leakage Current

Reference to 25°C,

= 1 mA

I

D

VDS = 600 V, VGS = 0 V

DBV

25°C

150°C 50

Gate−to−Source Forward Leakage VGS = ±20 V I

DT

I

DSS

GSS

DSS

J

600 V

/

0.6 V/°C

1 mA

±10

mA

ON CHARACTERISTICS (Note 4)

Static Drain−to−Source

VGS = 10 V, ID = 3.0 A R

DS(on)

0.98 1.2

W

On−Resistance

Gate Threshold Voltage

VDS = VGS, ID = 100 mA

Forward Transconductance VDS = 15 V, ID = 3.0 A g

V

GS(th)

FS

3.0 3.9 4.5 V

5.0 S

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 5)

Output Capacitance (Note 5) C

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

C

iss

oss

C

rss

738 923 1107

90 106 125

15 23 30

pF

(Note 5)

Total Gate Charge (Note 5)

Gate−to−Source Charge (Note 5) Q

Gate−to−Drain (“Miller”) Charge

(Note 5)

VDD = 300 V, ID = 6.0 A,

= 10 V

V

GS

Plateau Voltage V

Gate Resistance R

Q

g

gs

Q

gd

GP

g

15.5 31 47

3 6.3 9.5

8 17 24.5

6.4 V

3.2

nC

W

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

V

= 300 V, ID = 6.0 A,

DD

= 10 V, RG = 5 Ω

V

GS

t

Fall Time t

d(on)

r

d(off)

f

13

17

30

28

ns

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)

Diode Forward Voltage IS = 6.0 A, VGS = 0 V V

Reverse Recovery Time

Reverse Recovery Charge Q

VGS = 0 V, VDD = 30 V

I

= 6.0 A, di/dt = 100 A/ms

S

SD

t

rr

338 ns

2.0

1.6 V

mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

5. Guaranteed by design.

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NDF06N60Z

TYPICAL CHARACTERISTICS

12

TJ = 25°C

10

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

VGS = 15 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

2

1.5

1

10 V

7 V

6.8 V

20

ID = 3 A

= 25°C

T

J

6.6 V

6.4 V

6.2 V

6.0 V

5.8 V

5.6 V

12

10

8

6

4

, DRAIN CURRENT (A)

D

I

2

25151050

0

1.75

1.5

1.25

1

VDS ≥ 30 V

TJ = 25°C

TJ = 150°C

VGS = 10 V

TJ = −55°C

6

TJ = 25°C

87543

0.5

, DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on)

R

Figure 3. On−Resistance vs. V

2.6

ID = 3 A

= 10 V

V

GS

2.2

1.8

1.4

1.0

, DRAIN−TO−SOURCE RES-

ISTANCE (NORMALIZED)

0.6

DS(on)

R

0.2

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

0.75

, DRAIN−TO−SOURCE RESISTANCE (W)

9871065

VGS (V) ID, DRAIN CURRENT (A)

GS

DS(on)

R

0.5

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

50

10,000

, LEAKAGE (nA)

DSS

I

15012510075250−25−50

1000

100

10

VGS = 0 V

TJ = 150°C

TJ = 100°C

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

106212840

500

6004003002001000

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3