ON Semiconductor NCV7703C User Manual

Triple Half-Bridge Driver with SPI Control

NCV7703C

The NCV7703C is a fully protected Triple Half−Bridge Driver designed specifically for automotive and industrial motion control applications. The three half−bridge drivers have independent control. This allows for high side, low side, and H−Bridge control. H−Bridge control provides forward, reverse, brake, and high impedance states (with EN = 0). The drivers are controlled via a standard Serial Peripheral Interface (SPI).

Features

• Ultra Low Quiescent Current in Sleep Mode, 1 mA for V

• 3 High−Side and 3 Low−Side Drivers Connected as Half−Bridges

• Internal Free−Wheeling Diodes

• Configurable as H−Bridge Drivers

• 500 mA (typ), 1.1 A (max) Drivers

• R

= 0.8 W (typ), 1.7 W (max)

DS(on)

• 5 MHz SPI Control with Daisy Chain Capability

• Compliance with 5 V and 3.3 V Systems

• Overvoltage and Undervoltage Lockout

• Fault Reporting

• 1.45 A Overcurrent Threshold Detection

• 3 A Current Limit

• Shoot−Through Attempt Detection

• Overtemperature Warning and Protection Levels

• Internally Fused Leads in SOIC−14 for Better Thermal Performance

• ESD Protection up to 6 kV

• These are Pb−Free Devices

and V

S

CC

14

www.onsemi.com

MARKING DIAGRAM

14

SOIC−14

D2 SUFFIX

1

CASE 751A

NCV7703C = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week G = Pb−Free Package

PIN CONNECTIONS

GND

OUT3

V

S

CSB

SI

SCLK

GND

NCV7703CG

AWLYWW

1

GND OUT1 OUT2 V

CC

EN SO GND

Typical Applications

• Automotive

• Industrial

• DC Motor Management

V

S

OUT1 OUT2

March, 2021 − Rev. 5

M M

Figure 1. Cascaded Application

V

ORDERING INFORMATION

Device Package Shipping†

NCV7703CD2R2G SOIC−14

S

V

S

OUT3

1 Publication Order Number:

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

(Pb−Free)

2500 /

Tape & Reel

NCV7703C/D

NCV7703C

V

S

EN

V

CC

SO

SCLK

CSB

V

POR

ENABLE OSC

Reference

& Bias

Fault

Detect

clk

S

clk

Charge

Pump

Control

Logic

Channel Enable

Waveshaping

V

S

High−Side

Driver

S

OUT1

Low−Side

Driver

Waveshaping

Under−Load

DRIVE 1

SI

SPI

16 Bit

Logic

and

Overcurrent

Fault

Thermal

Warning/Shutdown

Latch

V

S

clk Channel Enable

DRIVE 2

OUT2

Fault

V

S

Undervoltage

Lockout

Overvoltage

V

S

clk Channel Enable Fault

DRIVE 3

OUT3

Lockout

Figure 2. Block Diagram

GND

PACKAGE PIN DESCRIPTION

Pin #

1 GND* Ground. Connect all grounds together.

2 OUT3 Half Bridge Output 3.

3 V

4 CSB Chip Select Bar. Active low serial port operation.

5 SI Serial Input

6 SCLK Serial Clock

7 GND* Ground. Connect all grounds together.

8 GND* Ground. Connect all grounds together.

9 SO Serial Output

10 EN Enable. Logic high wakes the IC up from a sleep mode.

11 V

12 OUT2 Half Bridge Output 2.

13 OUT1 Half Bridge Output 1.

14 GND* Ground. Connect all grounds together.

*Pins 1, 7, 8, and 14 are internally shorted together. It is recommended to also short these pins externally.

Symbol Description

S

CC

Power Supply input for the output drivers and internal supply voltage.

Power supply input for internal logic.

www.onsemi.com

2

22 mF

C1

WDI

Wake Up

RESET

Vout

NCV7703C

NCV8518

Delay

120k

GND

D1* 1N4001

D2**

ENABLE

VBAT

10 mF

+

−

V

CC

EN

CSB

microprocessor

GND

SI

SCLK

SO

GND GND GND

GND

NCV7703C

* D1 optional. For use where reverse battery protection is required. ** D2 optional. For use where load dump exceeds 40V. *** C2−C4, Recommended for EMC performance.

Figure 3. Application Circuit

V

S

OUT1

C2***

M

OUT2

M

OUT3

10 nF

C3***

10 nF

C4***

10 nF

www.onsemi.com

3

NCV7703C

MAXIMUM RATINGS

Rating Value Unit

Power Supply Voltage (VS)

(DC) (AC), t < 500 ms, Ivs > −2 A

−0.3 to 40

−1

Output Pin OUTx

(DC) (AC), t < 500 ms, IOUTx > −2 A

Pin Voltage

(Logic Input pins, SI, SCLK, CSB, SO, EN, V

CC

)

−0.3 to 40

−1

−0.3 to 5.5 V

Output Current (OUTx)

(DC) (AC) (50 ms pulse, 1 s period)

Electrostatic Discharge, Human Body Model,

, OUT1, OUT2, OUT3 (Note 3)

V

S

Electrostatic Discharge, Human Body Model,

−2.0 to 2.0

−5.0 to 5.0

6 kV

2 kV

all other pins (Note 3)

Electrostatic Discharge, Machine Model,

, OUT1, OUT2, OUT3 (Note 3)

V

S

Electrostatic Discharge, Machine Model,

300 V

200 V

all other pins (Note 3)

Operating Junction Temperature −40 to 150 °C

Storage Temperature Range −55 to 150 °C

Moisture Sensitivity Level (MAX 260°C Processing) MSL3 −

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

V

A

Thermal Parameters

Test Conditions (Typical Value) Unit

14 Pin Fused SOIC Package min−pad board

(Note 1)

Junction−to−Lead (psi−JL8, Y

Junction−to−Ambient (R

1. 1−oz copper, 67 mm2 copper area, 0.062″ thick FR4.

2. 1−oz copper, 645 mm

q

2

) or Pins 1, 7, 8, 14

JL8

, qJA)

JA

copper area, 0.062″ thick FR4.

23 22

122 83

3. This device series incorporates ESD protection and is characterized by the following methods:

ESD HBM according to AEC−Q100−002 (EIA/JESD22−A114) ESD MM according to AEC−Q100−003 (EIA/JESD22−A115)

1″ pad board

(Note 2)

°C/W

www.onsemi.com

4

NCV7703C

ELECTRICAL CHARACTERISTICS

(−40°C ≤ TJ ≤ 150°C, 5.5 V ≤ VS ≤ 40 V, 3.15 V ≤ VCC ≤ 5.25 V, EN = VCC, unless otherwise specified)

Characteristic Conditions Min Typ Max Unit

GENERAL

Supply Current (V

Sleep Mode (Note 5)

)

S

VS = 13.2 V, OUTx = 0 V EN = SI = SCLK = 0 V, CSB = V 0 V < VCC < 5.25 V (T

= −40°C to 85°C)

J

CC

−

1.0

5.0

mA

= 13.2 V, OUTx = 0 V

V

S

EN = SI = SCLK = 0 V, CSB = V

CC

−

2.0

0 V < VCC < 5.25 V, TJ = 25°C

Supply Current (VS)

Active Mode

Supply Current (VCC)

Sleep Mode (Note 6)

Supply Current (VCC)

EN = VCC, 5.5 V < VS < 35 V No Load

VCC = CSB, EN = SI = SCLK = 0 V

= −40°C to 85°C)

(T

J

EN = V

CC

− 2.0 4.0 mA

− 0.1 2.5

− 1.5 3.0 mA

Active Mode

VCC Power−On−Reset Threshold − 2.55 2.90 V

VS Undervoltage Detection Threshold

Hysteresis

VS Overvoltage Detection Threshold

Hysteresis

Thermal Warning (Note 4) Threshold

Hysteresis

Thermal Shutdown (Note 4) Threshold

Hysteresis

Ratio of Thermal Shutdown to Thermal

VS decreasing 3.7

100

VS increasing 33.0

1.0

120

−

155

−

1.05 1.20 − °C/°C

4.1

365

36.5

2.5

140

20

175

30

4.5

450

40.0

4.0

170

−

195

−

Warning temperature (Note 4)

OUTPUTS

Output R

(Source) I

DS(on)

(Sink) I

DS(on)

Source Leakage Current

Sum of I(OUTx) x = 1, 2, 3

= −500 mA − − 1.7

out

= 500 mA − − 1.7

out

OUTx = 0 V, VS = 40 V, EN = 0 V CSB = V

CC

−5.0

−

0 V < VCC < 5.25 V Sum(I(OUTx)

mA

V

mV

V

°C

W

mA

OUTx = 0 V, V CSB = V

= 40 V, EN = 0 V

S

CC

−1.0

−

0 V < VCC < 5.25 V, TJ = 25°C Sum(I(OUTx)

Sink Leakage Current OUTx = VS = 40 V, EN = 0 V

CSB = V

CC

−

300

mA

0 V < VCC < 5.25 V

OUTx = V CSB = V

= 13.2 V, EN = 0 V

S

CC

−

10

0 V < VCC < 5.25 V, TJ = 25°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Thermal characteristics are not subject to production test

5. For temperatures above 85°C, refer to Figure 6.

6. For temperatures above 85°C, refer to Figure 7.

7. Current limit is active with and without overcurrent detection.

www.onsemi.com

5

NCV7703C

ELECTRICAL CHARACTERISTICS

(−40°C ≤ TJ ≤ 150°C, 5.5 V ≤ VS ≤ 40 V, 3.15 V ≤ VCC ≤ 5.25 V, EN = VCC, unless otherwise specified)

Characteristic UnitMaxTypMinConditions

OUTPUTS

Under Load Detection Threshold Source

Power Transistor Body Diode Forward Voltage If = 500 mA − 0.9 1.3 V

OVERCURRENT

Overcurrent Shutdown Threshold (OUTHx)

Overcurrent Shutdown Threshold (OUTLx) VCC = 5 V, Vs = 13.2 V 1.1 1.45 2.0 A

CURRENT LIMIT (Note 7)

Current Limit (OUTHx)

Current Limit (OUTLx) VCC = 5 V, Vs = 13.2 V,

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Thermal characteristics are not subject to production test

5. For temperatures above 85°C, refer to Figure 6.

6. For temperatures above 85°C, refer to Figure 7.

7. Current limit is active with and without overcurrent detection.

Sink

VCC = 5 V, Vs = 13.2 V −2.0 −1.45 −1.1 A

VCC = 5 V, Vs = 13.2 V

−17

2.0

−5.0 −3.0 −2.0

2.0 3.0 5.0

−7.0

7.0

−2.0 17

mA

A

www.onsemi.com

6

NCV7703C

ELECTRICAL CHARACTERISTICS

(−40°C ≤ TJ ≤ 150°C, 5.5 V ≤ VS ≤ 40 V, 3.15 V ≤ VCC ≤ 5.25 V, EN = VCC, unless otherwise specified)

Characteristic Symbol Conditions Min Typ Max Unit

LOGIC INPUTS (EN, SI, SCLK, CSB)

Input Threshold

High Low

2.0

−

0.8

Input Hysteresis (EN, SI, SCLK, CSB) 100 400 800 mV

Pulldown Resistance (EN, SI, SCLK) EN = SI = SCLK = V

CC

50 125 250

Pullup Resistance (CSB) CSB = 0 V 50 125 250

Input Capacitance (Note 8) − 10 15 pF

LOGIC OUTPUT (SO)

I

Output High

Output Low I

Tri−state Leakage CSB = VCC, 0 V v SO v V

Tri−state Input Capacitance (Note 8) CSB = V

= 1 mA VCC – 1.0 VCC – 0.7 − V

out

= −1.6 mA − 0.2 0.4 V

out

CC

−10 − 10

− 10 15 pF

TIMING SPECIFICATIONS

Under Load Detection Delay Time

200 350 600

Overcurrent Shutdown Delay Time VCC = 5 V, Vs = 13.2 V,

High Side Turn On Time ThsOn

High Side Turn Off Time ThsOff

Low Side Turn On Time TlsOn

Low Side Turn Off Time TlsOff

High Side Rise Time ThsTr

High Side Fall Time ThsTf

Low Side Rise Time TlsTr

Low Side Fall Time TlsTf

Bit13 = 0 Bit13 = 1

VS = 13.2 V, R

load

= 25 W

80 10

200

25

400

− 7.5 15

− 3.0 6.0

− 6.5 15

− 3.0 6.0

− 5.0 10

− 2.0 5.0

− 1.0 3.0

50

NonOverlap Time ThsOffLsOn High Side Turn Off to Low Side Turn On 1.0 − −

NonOverlap Time TlsOffHsOn Low Side Turn Off to High Side Turn On 1.0 − −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

8. Not production tested.

V

kW

mA

ms

ms ms

ms

www.onsemi.com

7