ON Semiconductor NCV7685 User Manual

12 Channels 60 mA LED Linear Current Driver I

C Controllable for Automotive Applications

NCV7685

The NCV7685 consists of twelve linear programmable constant current sources with common reference. The part is designed for use in the regulation and control of LED for automotive applications. The NCV7685 allows 128 different duty cycle levels adjustable using pulse width modulation (PWM) independently for each output channel programmable via I be chosen in four different configurations up to 1200 Hz. The device can be used with micro−controller applications using the I stand−alone applications where a choice could be done in between 2 different static configuration settings. The IC also provides 3.3 V voltage reference to the application for loads up to 1 mA.

LED brightness level is easily programmed using an external resistor. Each channel has an internal circuitry to detect open−load conditions with an optional auto−recovery mode. If one driver is in open−load condition, all other channels could be turned off according to the programmable bit setting.

The device is available in small body size SSOP24−EP package.

Features

• 12 Common Current Programmable Sources up to 60 mA

• Independent PWM Duty Cycle Control for each Channel via PC

• Common PWM Duty Cycle Control via I

• On−Chip 150, 300, 600 and 1200 Hz PWM

• Open LED String Diagnostics

• Low Dropout Operation for Pre−Regulator Applications

• Single Resistor for Current Set Point

• Voltage Reference 3.3 V/1 mA

• 8 Bits I

C Interface with CRC8 Error Detection

• OTP Bank for Stand−Alone Operation (2 Configurations)

• Output Enable Pin

• Detection and Protection Against Open Load and Under−Voltage

• Over Temperature Detection and Protection

• Low Emission with Spread Spectrum Oscillator

• NCV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable

• SSOP24−EP Packaging

C serial interface. PWM frequency can

C bus or in

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SSOP24−NB EP

CASE 940AQ

MARKING DIAGRAM

NCV7685

AWLYYWW

NCV7685 = Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping†

NCV7685DQR2G SSOP24−EP

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

2500/

Tape & Reel

Applications

• Dashboard Applications

• Rear Combination Lamps (RCL)

• Daytime Running Lights (DRL)

• Fog Lights

• Center High Mounted Stop Lamps (CHMSL) Arrays

• Turn Signal and Other Externally Modulated Applications

October, 2020 − Rev. 2

1 Publication Order Number:

NCV7685/D

NCV7685

VCC

VDD

OEN

SCL

SDA

CONF

3V3

REG

Life Support

Vint.

REG

Vint. REG

Vint.

Registers

PWM Registers

OUT1

ctrl

Iset

60 mA

I2C

Diagnostic control

OTP

GND

Figure 1. Block Diagram

EXPOSED PAD

OUT12

ctrl

Iset

NCV7685

Iset

60mA

Iset

GNDP

DIAG

DIAGEN

VDD

SCL

SDA

GND

OUTx

OEN

DIAG

DIAGEN

CONF

Figure 2. ESD Schematic

VCC

ISET

GNDP

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NCV7685

Vsupply

OUT1

OUT2

OUT3

OUT4

OUT5

OUT6

OUT7

OUT8

OUT9

OUT10

OUT11

OUT12

AWLYYWW

NCV7685

Figure 3. Pinout Diagram

VDD

SCL

SDA

OEN

DIAG

GNDP

DIAGEN

CONF

ISET

GND

MRA4003T3G

e.g. sensor

Optional connection if MCU control of OEN input is required.

3.3V/5V LDO

Open Drain

GPIO structure

C {

Micro−

controller

100nF

4.7K

CVDD

This GND−track is exclusively for COEN connection. (to avoid common impedance coupling from other GND−currents)

Figure 4. Application Diagram with Micro−controller (I2C Mode)

4.7K

1nF

10K

COEN 10nF

VCC

VDD

OEN

SCL

SDA

CONF

EXPOSED

100 nF

PAD

LDO

DC/DC

OUT1

GND

ctrl Iset

60 mA

GNDP

OUT1

(optional) 1nF

OUT12

STRING

ctrl

Iset

60mA

NCV7685

OUT12

(optional) 1nF

Iset

DIAG

DIAGEN

(optional)

2.2K

DIAG

1nF

10K

VCC

10K

2.2K

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Vsupply

MRA4003T3G

NCV7685

LDO

DC/DC

STRING

100nF

e.g. sensor

C2 1nF

VCC

VDD

10 K

10 nF

This GND−track is exclusively for COEN connection. (to avoid common impedance coupling from other GND−currents)

Figure 5. Application Diagram without Micro−controller (Stand Alone Mode)

Table 1. PIN FUNCTION DESCRIPTION

Pin #

1 OUT1 Channel 1 Current Output to LED

2 OUT2 Channel 2 Current Output to LED

3 OUT3 Channel 3 Current Output to LED

4 OUT4 Channel 4 Current Output to LED

5 OUT5 Channel 5 Current Output to LED

6 OUT6 Channel 6 Current Output to LED

7 OUT7 Channel 7 Current Output to LED

8 OUT8 Channel 8 Current Output to LED

9 OUT9 Channel 9 Current Output to LED

10 OUT10 Channel 10 Current Output to LED

11 OUT11 Channel 11 Current Output to LED

12 OUT12 Channel 12 Current Output to LED

13 GND Signal Ground

14 ISET Current Setting/EoL Enable Pin

15 CONF Stand Alone Mode Selection Bank

16 VCC 3.3 V Voltage Reference Output (Needs External Decoupling Capacitor)

17 VS Supply Voltage Input

18 DIAGEN Diagnostic Voltage Sensing Node for V

19 GNDP Power Ground for output drivers

20 DIAG Open−drain diagnostic input/output.

OEN

SCL

SDA

CONF

EXPOSED

PAD

Label Description

OUT1

ctrl

Iset

60 m A

OUT1

(optional) 1n F

OUT12

ctrl

Iset

60mA

OUT12

(optional) 1nF

Iset

DIAG

2.2K

10K

Vsupply

10K

DIAGEN

2.2K

NCV7685

GND GNDP

Reporting Open Circuit and thermal shutdown. Normal Operation = HIGH

DIAG

(optional)

1 nF

Via Resistor Divider

STRING

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NCV7685

Table 1. PIN FUNCTION DESCRIPTION (continued)

Pin # DescriptionLabel

21 OEN Output Enable Input

22 SDA I2C Serial Data

23 SCL I2C Serial Clock

24 VDD Digital Supply Voltage Input

epad epad True Ground

Do NOT Connect to PCB Traces other than GND

Table 2. ABSOLUTE MAXIMUM RATINGS

Symbol

_VS Power supply voltage:

MAX

Continuous supply voltage Transient Voltage (t < 500 ms, “load dump”)

_INx Input pin voltage (DIAGEN, DIAG, CONF, OEN) −0.3 40 V

MAX

_OUTx Continuous Output Pin voltage

MAX

Transient Voltage (t < 500 ms, “load dump”) or during PWM period = OFF

_VCC Stabilized supply voltage −0.3 3.6 V

MAX

_VDD Digital input supply voltage −0.3 5.5 V

MAX

_IO DC voltage at pins (VDD, SCL, SDA) −0.3 5.5 V

MAX

_ISET DC voltage at pin ISET −0.3 3.6 V

MAX

_GNDP Maximum Ground Current − 750 mA

MAX

JMAX

A_zap

Junction Temperature, T

OTP Zap Ambient Temperature 10 30 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as outside normal operating range. Protection functions are not designed for continuous repetitive operation.

Parameter Min Max Unit

−0.3

−40 150 °C

28 40

V V

Table 3. ATTRIBUTES

Parameter

ESD Capability (Note 2) ESD Voltage, HBM (Human Body Model); (100 pF, 1500 W)

− All pins

− Output pins OUTx to GND

ESD according to CDM (Charge Device Model)

− All pins

− Comer pins

ESD according to MM (Machine Mode)

− All pins

Moisture sensitivity (SSOP24−EP) (Note 3) MSL2

Storage Temperature −55 to 150 °C

Package Thermal Resistance (SSOP24−EP) (Note 4)

− Junction to Ambient, R

− Junction to Board, R

− Junction to Case (Top), R

2. This device series incorporates ESD protection and is tested by the following methods:

ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A114) ESD CDM tested per EIA/JES D22/C101, Field Induced Charge Model ESD MM according to AEC−Q100

3. For additional information, see or download ON Semiconductor’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D, and Application Note AND8003/D.

4. Values represent thermal resistances under natural convection are obtained in a simulation on a JEDEC−standard, 2S2P; High Effective Thermal Conductivity Test Board as specified in JESD51−7, in an environment described in JESD51−2a.

Value Unit

±2 ±4

±500 ±750

±150

45.8

8.8

10.1

kV kV

V V

°C/W °C/W °C/W

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NCV7685

Table 4. ELECTRICAL CHARACTERISTICS

(5 V < VS < 18 V, 3.15 V < VDD < 5.5 V, R1 = 1.82 kΩ, −40°C ≤ T

Characteristic Symbol Test Conditions Min Typ Max Unit

GENERAL

Supply Voltage

Supply Under−Voltage VSUV VS rising 3.8 4.1 4.4 V

Supply range during OTP zapping

Supply Under−Voltage hysteresis

Supply Current (Vs) Is(error mode) all OUTx OFF except channel in open load

Digital supply current IDD I2C mode, VS = 12 V − 0.24 2 mA

VDD Under Voltage detection

CURRENT SOURCE OUTPUTS

Output current

Current Matching from channel to channel

Current Slew Rate ISRx 10% to 90% − 30 −

Open Circuit Detection Threshold

Open load recovery in auto−recovery mode

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Matching formulas:

2IOUTx(min)

IOUTx(min) ) IOUTx(max)

VS_EXT Functional extended range (limited temper-

VS_OP Parametric operation 5 − 18 V

VS_OTPzap 2.5 V ≤ ISET ≤ 3.3 V;

VSUVhys − 200 − mV

Is(active) Active Mode

VDDUV_R VDD rising − − 2.9 V

VDDUV_F VDD falling 2 − − V

IOUThot OUTx = 1 V, Tj = 150°C 50 55 60 mA

IOUTcold OUTx = 0.5 V, Tj = −40°C 50 55 60 mA

ImatchCold Tj = −40°C (Note 5) −7 0 7 %

Imatch Tj = 25°C (Note 5) −6 0 6 %

ImatchHot Tj = 150°C (Note 5) −5 0 5 %

OLDT IOUTx > 20mA 30 50 70 % of output

OLR 5 10 15 mA

* 1ƫ 100 and

ature)

VS current peak capability ≥ 70 mA

SCL = SDA = 0

Iout_VCC = 0 mA

Iout_VCC = 1 mA

VS = 16 V, Vcc unloaded OUTx = 1 V, R1 = 2 kW

IOUTx(min) ) IOUTx(max)

≤ 150°C, unless otherwise specified)

2IOUTx(max)

* 1ƫ 100

5 − 28 V

13 − 18 V

−

− 7 10 mA

1.2

2.2

1.5

2.5

mA mA

mA/ms

current

Table 5. ELECTRICAL CHARACTERISTICS

(5 V < VS < 18 V, 3.15 V < V

Symbol

VOLTAGE REFERENCE

V_VCC Output Voltage Tolerance I_VCC ≤ 1 mA 3.20 3.30 3.45 V

Iout_VCC Output Current − − −1 mA

Cload_VCC Load Capacitor

INPUTS: OEN, CONF

VinL

VinH Input High Level − 1.25 1.66 V

Vin_hyst Input Hysteresis 100 250 400 mV

Rin_pd Input Pull−down Resistor 120 200 280

INPUTS: SCL, SDA

VinL Input Low Level − − 0.3×VDD V

Input Low Level 0.7 1.0 − V

< 5.5 V, R1 = 1.82 kΩ, −40°C ≤ TJ ≤ 150°C, unless otherwise specified)

Parameter Test Conditions Min Typ Max Unit

ESR < 200 mW

0.9 1.0 2.5 nF

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