ON Semiconductor NCV7356 Technical data

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NCV7356
Single Wire CAN Transceiver
The NCV7356 is a physical layer device for a single wire data link capable of operating with various Carrier Sense Multiple Access with Collision Resolution (CSMA/CR) protocols such as the Bosch Controller Area Network (CAN) version 2.0. This serial data link network is intended for use in applications where high data rate is not required and a lower data rate can achieve cost reductions in both the physical media components and in the microprocessor and/or dedicated logic devices which use the network.
The network shall be able to operate in either the normal data rate mode or a high−speed data download mode for assembly line and service data transfer operations. The high−speed mode is only intended to be operational when the bus is attached to an off−board service node. This node shall provide temporary bus electrical loads which facilitate higher speed operation. Such temporary loads should be removed when not performing download operations.
The bit rate for normal communications is typically 33 kbit/s, for high−speed transmissions like described above a typical bit rate of 83 kbit/s is recommended. The NCV7356 is designed in accordance to the Single Wire CAN Physical Layer Specification GMW3089 V2.4 and supports many additional features like undervoltage lockout, timeout for faulty blocked input signals, output blanking time in case of bus ringing and a very low sleep mode current.
Features
Fully Compatible with J2411 Single Wire CAN Specification
60 mA (max) Sleep Mode Current
Operating Voltage Range 5.0 to 27 V
Up to 100 kbps High−Speed Transmission Mode
Up to 40 kbps Bus Speed
Selective BUS Wake−Up
Logic Inputs Compatible with 3.3 V and 5 V Supply Systems
Control Pin for External Voltage Regulators (14 Pin Package Only)
Standby to Sleep Mode Timeout
Low RFI Due to Output Wave Shaping
Fully Integrated Receiver Filter
Bus Terminals Short−Circuit and Transient Proof
Loss of Ground Protection
Protection Against Load Dump, Jump Start
Thermal Overload and Short Circuit Protection
ESD Protection of 4.0 kV on CAN Pin (2.0 kV on Any Other Pin)
Undervoltage Lock Out
Bus Dominant Timeout Feature
NCV Prefix for Automotive and Other Applications Requiring Site
and Change Control
Pb−Free Packages are Available
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MARKING DIAGRAMS
8
1
SOIC−8
D SUFFIX
CASE 751
14
1
SOIC−14
D SUFFIX
CASE 751A
GND GND
TxD
MODE1
RxD V
GND GND
ORDERING INFORMATION
Device Package Shipping
NCV7356D1G SOIC−8
NCV7356D1R2G SOIC−8 NCV7356D2 SOIC−14 55 Units / Rail
NCV7356D2R2 SOIC−14 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G = Pb−Free Package
PIN CONNECTIONS
1TxD 8 GND 2MODE0 3MODE1 4RxD
(Top View)
1
NC INH
(Top View)
(Pb−Free)
(Pb−Free)
8
1
14
AWLYWW
1
14 132 123 114 105
96 87
2500 Tape & Reel
V7356 ALYW
G
NCV7356
7 CANH 6 LOAD 5V
BAT
NC CANHMODE0 LOAD
BAT
98 Units / Rail
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 2
1 Publication Order Number:
NCV7356/D
NCV7356
V
BAT
NCV7356
TxD
MODE0
MODE1
5 V Supply
and
References
RC−Osc
Time Out
MODE
CONTROL
Biasing and
V
Monitor
BAT
Wave Shaping
Receive
Comparator
Input Filter
Reverse
Protection
CAN Driver
Feedback
Loss of Ground
Detection
Current
CANH
Loop
LOAD
RxD
RxD Blanking
Time Filter
Figure 1. 8−Pin Package Block Diagram
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2
Reverse
Current
Protection
GND
NCV7356
V
TxD
BAT
5 V Supply
and
References
RC−Osc
Time Out
Biasing and
V
Monitor
BAT
Wave Shaping
Input Filter
Reverse
Current
Protection
CAN Driver
Feedback
Loop
INH
NCV7356
CANH
MODE0
MODE1
RxD
MODE
CONTROL
Receive
Comparator
RxD Blanking
Time Filter
Loss of Ground
Detection
Figure 2. 14−Pin Package Block Diagram
LOAD
Reverse
Current
Protection
GND
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NCV7356
P ACKAGE PIN DESCRIPTION
SOIC−8 SOIC−14 Symbol Description
1 2 TxD Transmit data from microprocessor to CAN. 2 3 MODE0 Operating mode select input 0. 3 4 MODE1 Operating mode select input 1. 4 5 RxD Receive data from CAN to microprocessor. 5 10 V 6 11 LOAD Resistor load (loss of ground detection low side switch). 7 12 CANH Single wire CAN bus pin. 8 1, 7, 8, 14 GND Ground
6, 13 NC No Connection (Note 1)
9 INH Control pin for external voltage regulator (high voltage high side switch) (14 pin package only)
1. PWB terminal 13 can be connected to ground which will allow the board to be assembled with either the 8 pin package or the 14 pin package.
BAT
Battery input voltage.
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NCV7356
Electrical Specification
All voltages are referenced to ground (GND). Positive currents flow into the IC. The maximum ratings given in the table below are limiting values that do not lead to a
MAXIMUM RATINGS
Rating Symbol Condition Min Max Unit
permanent damage of the device but exceeding any of these limits may do so. Long term exposure to limiting values may affect the reliability of the device.
Supply Voltage, Normal Operation V Short−Term Supply Voltage, T ransient V
BAT
BAT.LD
Load Dump; t < 500 ms 40 V
−0.3 18 V
(peak)
Jump Start; t < 1.0 min 27 V Transient Supply Voltage V Transient Supply Voltage V Transient Supply Voltage V CANH Voltage V
Transient Bus Voltage V Transient Bus Voltage V Transient Bus Voltage V
CANHTR1 CANHTR2 CANHTR3
DC Voltage on Pin LOAD V DC Voltage on Pins TxD, MODE1, MODE0, RxD V ESD Capability of CANH V
ESDBUS
BAT.TR1 BAT.TR2 BAT.TR3
CANH
LOAD
DC
ISO 7637/1 Pulse 1 (Note 2) −50 V
ISO 7637/1 Pulses 2 (Note 2) 100 V
ISO 7637/1 Pulses 3A, 3B −200 200 V
V
< 27 V −20
BAT
V
= 0 V −40
BAT
40
ISO 7637/1 Pulse 1 (Note 3) −50 V
ISO 7637/1 Pulses 2 (Note 3) 100 V
ISO 7637/1 Pulses 3A, 3B (Note 3) −200 200 V
Via RT > 2.0 kW −40 40 V
−0.3 7.0 V
Human Body Model
−4000 4000 V
V
Eq. to Discharge 100 pF with 1.5 kW ESD Capability of Any Other Pins V
ESD
Human Body Model
−2000 2000 V
Eq. to Discharge 100 pF with 1.5 kW Maximum Latchup Free Current at Any Pin I
LATCH
Storage Temperature T Junction Temperature T Lead Temperature Soldering
Reflow: (SMD styles only)
SOIC−14 T
SOIC−8 60 s − 150 s above 217°C 260 peak
STG
sld
J
60 s − 150 s above 183°C 240 peak °C
−500 500 mA
−55 150 °C
−40 150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
2. ISO 7637 test pulses are applied to V
3. ISO 7637 test pulses are applied to CANH via a coupling capacitance of 1.0 nF.
via a reverse polarity diode and >1.0 mF blocking capacitor.
BAT
4. ESD measured per Q100−002 (EIA/JESD22−A114−A).
TYPICAL THERMAL CHARACTERISTICS
Parameter
SOIC−8
Junction−to−Lead (psi−JL7, Y Junction−to−Ambient (R
q
SOIC−14
Junction−to−Lead (psi−JL8, Y Junction−to−Ambient (R
q
5. 1 oz copper, 53 mm2 coper area, 0.062 thick FR4.
6. 1 oz copper, 716 mm2 coper area, 0.062 thick FR4.
7. 1 oz copper, 94 mm2 coper area, 0.062 thick FR4.
8. 1 oz copper, 767 mm2 coper area, 0.062 thick FR4.
) or Pins 6−7 57 (Note 5) 51 (Note 6) °C/W
JL8
, qJA) 187 (Note 5) 128 (Note 6) °C/W
JA
) 30 (Note 7) 30 (Note 8) °C/W
JL8
, qJA) 122 (Note 7) 84 (Note 8) °C/W
JA
Min Pad Board 1, Pad Board
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Test Condition, Typical Value
Unit
NCV7356
ELECTRICAL CHARACTERISTICS (V
Characteristic
= 5.0 to 27 V , T
BAT
Symbol Condition Min Typ Max Unit
= −40 to +125°C, unless otherwise specified.)
A
GENERAL
Undervoltage Lock Out Supply Current, Recessive,
All Active Modes
Normal Mode Supply Current,
Dominant
High−Speed Mode Supply Current,
Dominant
Wake−Up Mode Supply Current,
Dominant
Sleep Mode Supply Current I
V
BATuv
I
BATN
I
BATN
(Note 9)
I
BATN
(Note 9)
I
BATW
(Note 9)
BATS
V
BAT
= 18 V ,
Not High Speed Mode 5.0 6.0 mA
TxD Open
V
= 27 V , MODE0 = MODE1 = H,
BAT
TxD = L, R
V
= 16 V , MODE0 = H, MODE1 = L,
BAT
TxD = L, R
V
= 27 V , MODE0 = L, MODE1 = H,
BAT
TxD = L, R
V
= 18 V, TxD, RxD, MODE0,
BAT
MODE1 Open Thermal Shutdown (Note 9) T Thermal Recovery (Note 9) T
SD
REC
CANH
Bus Output Voltage V
oh
RL > 200 W, Normal Mode
6.0 V < V
Bus Output Voltage
Low Battery
Bus Output Voltage
High−Speed Mode
Fixed Wake−Up
Output High Voltage
Offset Wake−Up
Output High Voltage
Recessive State
Output Voltage Bus Short Circuit Current −I Bus Leakage Current
During Loss of Ground Bus Leakage Current, Bus Positive I Bus Input Threshold V
V
oh
V
oh
V
ohWuFix
V
ohWuOffset
V
ol
CAN_SHORTVCANH
I
LKN_CAN
RL > 200 W, Normal High−Speed Mode
Recessive State or Sleep Mode,
(Note 10)
LKP_CAN
ih
5.0 V < V
RL > 75 W, High−Speed Mode
8.0 V < V
Wake−Up Mode, R
11.4 V < V
Wake−Up Mode, R
5.0 V < V
R
load
= 0 V , V
BAT
Loss of Ground, V
TxD High −10 10 mA
Normal, High−Speed Mode,
6.0 v V Bus Input Threshold Low Battery V Fixed Wake−Up
Input High Voltage Threshold
Offset Wake−Up
Input High Voltage Threshold
V (Note 9)
V
ihWuOffset
(Note 9)
ihlb
ihWuFix
Normal, V
BAT
Sleep Mode, V
Sleep Mode V
LOAD
Voltage on Switched Ground Pin V
LOAD_1mA
Voltage on Switched Ground Pin V Voltage on Switched Ground Pin V Load Resistance During Loss of
LOAD_LOB
R
LOAD_LOB
LOAD
I
LOAD
I
= 1.0 mA 0.1 V
LOAD
I
= 5.0 mA 0.5 V
LOAD
= 7.0 mA, V
V
BAT
Battery
9. Thresholds not tested in production, guaranteed by design.
10.Leakage current in case of loss of ground is the summary of both currents I
3.5 4.8 V
High Speed Mode 8.0
30 35 mA
= 200 W
load
70 75 mA
= 75 W
load
60 75 mA
= 200 W
load
30 60 mA
155 180 °C
126 150 °C
4.4 5.1 V
< 27 V
BAT
3.4 5.1 V
< 6.0 V
BAT
4.2 5.1 V
< 16 V
BAT
BAT
BAT
> 200 W,
L
< 27 V
> 200 W,
L
< 11.4 V
9.9 12.5 V
V
–1.5 V
BAT
BAT
−0.20 0.20 V
= 6.5 kW
= 27 V, TxD = 0 V 50 350 mA
= 0 V −50 10 mA
CANH
2.0 2.1 2.2 V
v 27 V
BAT
= 5.0 V to 6.0 V 1.6 1.7 2.2 V
> 10.9 V 6.6 7.9 V
BAT
−4.3 V
BAT
= 0 V 1.0 V
BAT
= 0 R
LOAD
R
−10%
LKN_CAN
and I
LKN_LOAD
.
−3.25 V
BAT
LOAD
+35%
V
W
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NCV7356
ELECTRICAL CHARACTERISTICS (continued) (V
Characteristic
Symbol Condition Min Typ Max Unit
BAT
TXD, MODE0, MODE1
High Level Input Voltage Low Level Input Voltage V TxD Pullup Current −I
MODE0 and 1 Pulldown Resistor R
V
ih
il
IL_TXD
MODE_pd
TxD = L, MODE0 and 1 = H
RXD
Low Level Output Voltage V High Level Output Leakage I
ol_rxd
ih_rxd
RxD Output Current Irxd V
INH (14 Pin Package Only)
High Level Output Voltage V Leakage Current I
oh_INH INH_lk
MODE0 = MODE1 = L, INH = 0 V −5.0 5.0 mA
= 5.0 to 27 V , T
6.0 < V
6.0 < V
= −40 to +125°C, unless otherwise specified.)
A
< 27 V 2.0 V
BAT
< 27 V 0.8 V
BAT
10 50 mA
5.0 < V
BAT
< 27 V
10 50 kW
I
= 2.0 mA 0.4 V
RxD
V
= 5.0 V −10 10 mA
RxD
= 5.0 V 70 mA
RxD
I
= −180 mA V
INH
BAT
−0.8 V
−0.5 V
BAT
BAT
V
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TIMING MEASUREMENT LOAD CONDITIONS
Normal and High Voltage Wake−Up Mode High−Speed Mode
min load / min tau 3.3 kohm / 540 pF min load / max tau 3.3 kohm / 1.2 nF max load / min tau 200 ohm / 5.0 nF max load / max tau 200 ohm / 20 nF
NCV7356
Additional 140 ohm tool resistance
to ground in parallel
Additional 120 ohm tool resistance
to ground in parallel
ELECTRICAL CHARACTERISTICS (5.0 V V
27 V, −40°C TA 125°C, unless otherwise specified.)
BAT
AC CHARACTERISTICS (See Figures 3, 4, and 5)
Characteristic Symbol Condition Min Typ Max Unit
Transmit Delay in Normal and Wake−Up
Mode, Bus Rising Edge (Note 11)
Transmit Delay in Wake−Up Mode to V
ihWU
,
Bus Rising Edge (Note 12)
Transmit Delay in Normal Mode,
Bus Falling Edge (Note 13)
Transmit Delay in Wake−Up Mode,
Bus Falling Edge (Note 13)
Transmit Delay in High−Speed Mode,
Bus Rising Edge (Note 14)
Transmit Delay in High−Speed Mode,
Bus Falling Edge (Note 15) Receive Delay, All Active Modes (Note 16) t Receive Delay, All Active Modes (Note 16) t Input Minimum Pulse Length,
All Active Modes (Note 16) Wake−Up Filter Time Delay t Receive Blanking Time
t
Tr
t
TWUr
t
Tf
t
TWU1f
t
THSr
t
THSf
DR RD
t
mpDR
t
mpRD
WUF
t
rb
Min and Max Loads per Timing
2.0 6.3 ms
Measurement Load Conditions
Min and Max Loads per Timing
2.0 18 ms
Measurement Load Conditions
Min and Max Loads per Timing
1.8 10 ms
Measurement Load Conditions
Min and Max Loads per Timing
3.0 13.7 ms
Measurement Load Conditions
Min and Max Loads per Timing
0.1 1.5 ms
Measurement Load Conditions
Min and Max Loads per Timing
0.04 3.0 ms
Measurement Load Conditions CANH High to Low Transition 0.3 1.0 ms CANH Low to High Transition 0.3 1.0 ms CANH High to Low Transition
CANH Low to High Transition
0.15
0.15
1.0
1.0
ms
See Figure 4 10 70 ms See Figure 5 0.5 6.0 ms
After TxD L−H Transition
TxD Timeout Reaction Time t TxD Timeout Reaction Time t Delay from Normal to High−Speed and
tout
toutwu
t
dnhs
Normal and High−Speed Mode 17 ms Wake−Up Mode 17 ms
30 ms
High Voltage W ake−Up Mode
Delay from High−Speed and High Voltage
t
dhsn
30 ms
Wake−Up to Normal Mode Delay from Normal to Standby Mode t Delay from Sleep to Normal Mode t Delay from Standby to Sleep Mode (Note 17) t
dsby dsnwu dsleep
V
= 6.0 V to 27 V 500 ms
BAT
V
= 6.0 V to 27 V 50 ms
BAT
V
= 6.0 V to 27 V 100 250 500 ms
BAT
11.The maximum signal delay time for a bus rising edge is measured from Vcmos_il on the TxD input pin to the VihMax + Vgoff max level on CANH at maximum network time constant, minimum signal delay time for a bus rising edge is measured from Vcmos_ih on the TxD input pin to 1 V on CANH at minimum network time constant. These definitions are valid in both normal and High Voltage Wake−Up (HVWU) mode.
12.The maximum signal delay time for a bus rising edge in HVWU mode is measured from Vcmos_il on the TxD input pin to the VihWuMax + Vgoff max level on CANH at maximum network time constant, minimum signal delay time for a bus rising edge is measured from Vcmos_ih on the TxD input pin to 1 V on CANH at minimum network time constant.
13.Maximum signal delay time for a bus falling edge is measured from Vcmos_ih on the TxD input pin to 1 V on CANH at maximum network time constant, minimum signal delay time for a bus falling edge is measured from Vcmos_ih on the TxD input pin to the VihMax + Vgoff max level on CANH. These definitions are valid in both normal and HVWU mode.
14.The signal delay time in high−speed mode for a bus rising edge is measured from Vcmos_il on the TxD input pin to the VihMax + Vgoff max level on CANH at maximum high−speed network time constant.
15.The signal delay time in high−speed mode for a bus falling edge is measured from Vcmos_ih on the TxD input pin to 1 V on CANH at maximum high−speed network time constant.
16.Receive delay time is measured from the rising / falling edge crossing of the nominal Vih value on CANH to the falling (Vcmos_il_max) / rising (Vcmos_ih_min) edge of RxD. This parameter is tested by applying a square wave signal to CANH. The minimum slew rate for the bus rising and falling edges is 50 V/ms. The low level on bus is always 0 V. For normal mode and high−speed mode testing the high level on bus is 4 V. For HVWU mode testing the high level on bus is V
17.Tested on 14 Pin package only.
BAT
− 2 V .
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