ON Semiconductor NCV4279 Technical data

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NCV4279

5.0 V Micropower 150 mA
LDO Linear Regulator with
DELAY, Adjustable RESET,
and Sense Output

The NCV4279 is a 5.0 V precision micropower voltage regulator

with an output current capability of 150 mA.

The output voltage is accurate within ±2.0% with a maximum
dropout voltage of 0.5 V at 100 mA. Low quiescent current is a feature
drawing only 150 mA with a 1.0 mA load. This part is ideal for any and
all battery operated microprocessor equipment.

Microprocessor control logic includes an active reset output RO
with delay and a SI/SO monitor which can be used to provide an early
warning signal to the microprocessor of a potential impending reset
signal. The use of the SI/SO monitor allows the microprocessor to
finish any signal processing before the reset shuts the microprocessor
down.

The active Reset circuit operates correctly at an output voltage as
low as 1.0 V. The Reset function is activated during the power up
sequence or during normal operation if the output voltage drops
outside the regulation limits.

The reset threshold voltage can be decreased by the connection of an
external resistor divider to the R
against reverse battery, short circuit, and thermal overload conditions.
The device can withstand load dump transients making it suitable for
use in automotive environments. The device has also been optimized
for EMC conditions.

If the application requires pullup resistors at the logic outputs Reset
and Sense Out, the NCV4269 with integrated resistors can be used.

Features

• 5.0 V ± 2.0% Output

• Low 150 mA Quiescent Current

• Active Reset Output Low Down to V

• Adjustable Reset Threshold

• 150 mA Output Current Capability

• Fault Protection

♦ +60 V Peak Transient Voltage
♦ −40 V Reverse Voltage
♦ Short Circuit
♦ Thermal Overload

• Early Warning through SI/SO Leads

• Internally Fused Leads in SO−14 Package

• Very Low Dropout Voltage

• Electrical Parameters Guaranteed Over Entire Temperature Range

• Pb−Free Packages are Available

• NCV Prefix for Automotive and Other Applications Requiring Site

and Control Changes

lead. The regulator is protected

ADJ

= 1.0 V

Q

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MARKING

DIAGRAMS

8

1

14

1

A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G, G = Lead Free Indicators

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.

SO−8
D SUFFIX
CASE 751

SO−14

D SUFFIX

CASE 751A

8

1

14

NCV4279

AWLYWWG

1

4279

ALYW

G

© Semiconductor Components Industries, LLC, 2005

December, 2005 − Rev. 3

1 Publication Order Number:

NCV4279/D

NCV4279

I

Reference

and Trim

D

or

R

ADJ

SI

Error

Amplifier

Current and

Saturation

Control

Reference

+

−

Q

RO

SO

GND

Figure 1. Block Diagram

PIN CONNECTIONS

18

ADJ

114

ADJ

QI
SOSI

ROR
GNDD

SIR
ID
GNDGND

GNDGND
GNDGND
QGND
SORO

SO−8

SO−14

PACKAGE PIN DESCRIPTION

Package Pin Number

SO−8 SO−14

3 1 R
4 2 D Reset Delay; To Set Time Delay, Connect to GND with a Capacitor
5 3, 4, 5, 6,

10, 11, 12
6 7 RO Reset Output; This is an Open−Collector Output. Leave Open if Not Used.
7 8 SO Sense Output; This is an Open−Collector Output. If not used, keep open.
8 9 Q
1 13 I Input; Connect to GND Directly at the IC with a Ceramic Capacitor.
2 14 SI Sense Input; If not used, Connect to Q.

Pin Symbol Function

ADJ

GND Ground

Reset Threshold Adjust; if not used to connect to GND.

5 V Output; Connect to GND with a 10 mF Capacitor, ESR < 10 W.

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2

NCV4279

MAXIMUM RATINGS (T

= −40°C to 150°C)

J

Parameter

Symbol Min Max Unit

Input to Regulator V

Input Peak Transient Voltage V
Sense Input V

Reset Threshold Adjust V

Reset Delay V

Ground I
Reset Output V

Sense Output V

Regulated Output V

Junction Temperature
Storage Temperature

Input Voltage Operating Range
Junction Temperature Operating Range

Junction−to−Ambient Thermal Resistance SO−8

SO−14

I

RADJ

I

RADJ

I

I

RO

I

SO

I
T

T

STG

V
T

R

I

I

I

I

SI

SI

−40

Internally Limited45Internally Limited

− 60 V

−40

−1

−0.3

−10

−0.3

Internally Limited7Internally Limited

50 − mA

−0.3

Internally Limited7Internally Limited

−0.3

Internally Limited7Internally Limited

−0.5

−10

−

−50

−

−40

− 200

RO

SO

Q

q

D

D

q

Q

J

I

J

JA

45

1
7

10

7.0

−

150
150

45

150

70

V

V

mA

V

mA

V

V

V

V

mA

°C
°C

V

°C

k/W

Junction−to−Pin 4, all GND Pins Grounded. SO−14

R

q

JP

− 30 k/W

Lead Temperature Soldering and MSL

Parameter

Symbol Value Unit

MSL, 8−Lead, 14−Lead, LS Temperature 260°C Peak (Notes 3, 4) MSL 1 −

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

1. This device series incorporates ESD protection and exceeds the following ratings:
Human Body Model (HBM) ≤ 2.0 kV per JEDEC standard: JESD22–A114.
Machine Model (MM) ≤ 200 V per JEDEC standard: JESD22–A115.

2. Latchup Current Maximum Rating: ≤ 150 mA per JEDEC standard: JESD78.

3. Lead free: 60−150 Sec above 217°C, 40 Sec Max at Peak, 265°C Peak.

4. Leaded; 60−150 Sec above 183°C, 30 Sec Max at Peak, 240°C Peak.

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3

NCV4279

ELECTRICAL CHARACTERISTICS (T

= −40°C ≤ TJ≤ 125°C, VI = 13.5 V unless otherwise specified)

J

Characteristic Symbol Test Conditions Min Typ Max Unit

REGULATOR

Output Voltage
Current Limit I
Current Consumption; Iq = II – I
Current Consumption; Iq = II – I
Current Consumption; Iq = II – I

Q

Q

Q

Dropout Voltage V
Load Regulation
Line Regulation

RESET GENERATOR

Reset Switching Threshold
Reset Adjust Switching Threshold V
Reset Output Saturation Voltage V
Upper Delay Switching Threshold V
Lower Delay Switching Threshold V
Saturation Voltage on Delay Capacitor V
Charge Current I
Delay Time L ³ H t
Delay Time H ³ L t

INPUT VOLTAGE SENSE

Sense Threshold High

VSI, High − 1.24 1.31 1.38 V

V

Q

Q

I

q

I

q

I

q

dr

D

VQ

D

VQ

V

RT

RAD,JTH

RO,SAT

UD

LD

D,SAT

D

d

t

1 mA v IQ v 100 mA; 6 V v VI v 16 V 4.90 5.00 5.10 V

− 150 200 500 mA

IQ = 1 mA, RO, SO High − 150 250
IQ = 10 mA, RO, SO High − 250 450
IQ = 50 mA, RO, SO High − 2.0 3.0 mA

IQ = 100 mA (Note 5) − 0.25 0.5 V

IQ = 5 mA to 100 mA − 10 20 mV

VI = 6 V to 26 V; IQ = 1 mA − 10 30 mV

− 4.50 4.65 4.80 V

VQ > 3.5 V 1.26 1.35 1.44 V

VQ < VRT, RRO = 20 kW

− 0.1 0.4 V

− 1.4 1.8 2.2 V

− 0.3 0.45 0.60 V

VQ < V

RT

− − 0.1 V

VD = 1 V 3.0 6.5 9.5
CD = 100 nF 17 28 − ms
CD = 100 nF − 1.0 −

mA
mA

mA

ms

Sense Threshold Low VSI, Low − 1.16 1.20 1.28 V
Sense Output Saturation Voltage VSO, Low
Sense Input Current I

SI

VSI < 1.20 V; VQ > 3 V; RSO = 20 kW

− −1.0 0.1 1.0

− 0.1 0.4 V

5. Dropout voltage = VI − VQ measured when the output voltage has dropped 100 mV from the nominal value obtained at 13.5 V input.

mA

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NCV4279

I

I

C

1000 mF

V

I

V

SI

I

470 nF

I

I

SI

SI

D GND RO SO

I

D

V

C

D

D

Q

RADJ

I

V

q

RO

V

SO

I

Q

RADJ1

I

RADJ

V

RADJ

R

SO

RADJ2

C

Q

22 mF

R

RO

V

Q

100 nF

Figure 2. Measuring Circuit

V

I

V

Q

V

RT

V

D

V

UD

V

LD

t

d

V

RO

V

RO,SAT

Power−on−Reset Thermal

t

RR

Shutdown

Voltage Dip

Undervoltage Secondary

at Input

Figure 3. Reset Timing Diagram

Spike

< t

RR

dV

+

dt

Overload
at Output

t

t

I

D

C

D

t

t

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