Sub−One Volt Rail−to−Rail
Operational Amplifier with
Enable Feature
The NCS2002 is an industry first sub−one volt operational amplifier
that features a rail−to−rail common mode input voltage range, along
with rail−to−rail output drive capability. This amplifier is guaranteed
to be fully operational down to 0.9 V, providing an ideal solution for
powering applications from a single cell Nickel Cadmium (NiCd) or
Nickel Metal Hydride (NiMH) battery . Additional features include no
output phase reversal with overdriven inputs, trimmed input offset
voltage of 0.5 mV, extremely low input bias current of 40 pA, and a
unity gain bandwidth of 1.1 MHz at 5.0 V.
The NCS2002 also has an active high enable pin that allows external
shutdown of the device. In the standby mode, the supply current is
typically 1.9 A at 1.0 V. Because of its small size and enable feature,
this amplifier represents the ideal solution for small portable
electronic applications. The NCS2002 is available in the space saving
SOT23−6 (TSOP−6) package with two industry standard pinouts.
Features
• 0.9 V Guaranteed Operation
• Standby Mode: I
• Rail−to−Rail Common Mode Input Voltage Range
• Rail−to−Rail Output Drive Capability
• No Output Phase Reversal for Over−Driven Input Signals
• 0.5 mV Trimmed Input Offset
• 10 pA Input Bias Current
• 1.1 MHz Unity Gain Bandwidth at 2.5 V, 1.0 MHz at 0.5 V
• Tiny SOT23−6 (TSOP−6) Package
T ypical Applications
• Single Cell NiCd / NiMH Battery Powered Applications
Guaranteed by design. NCV prefix is for automotive
and other applications requiring site and change
control.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Input
V
OUT
V
Input
ORDERING INFORMATION
DevicePackageShipping
low
TSOP
SN SUFFIX
CASE 318G
Q for NCS2002SN2T1
PIN CONNECTIONS
1
2
CC
Style 1 Pinout (SN1T1)
EE
Style 2 Pinout (SN2T1)
= −40°C, T
+−
3
1
2
+−
3
high
6
1
6
V
EE
5 Enable
Inverting
4
Input
6
V
CC
Enable
5
Inverting
4
Input
= +125°C.
AAxYW
†
This device contains 81 active transistors.
Figure 1. Typical Application
Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 2
1Publication Order Number:
NCS2002/D
NCS2002, NCV2002
MAXIMUM RATINGS
RatingSymbolValueUnit
Supply Voltage (VCC to VEE)V
Input Differential Voltage Range (Note 1)V
Input Common Mode Voltage Range (Note 1)V
Output Short Circuit Duration (Note 2)t
Junction TemperatureT
IDR
ICR
Sc
S
V
V
J
Power Dissipation and Thermal Characteristics
SOT23−6 Package
Thermal Resistance, Junction to Air
Power Dissipation @ T
Operating Ambient Temperature Range
NCS2002
= 70°C
A
R
JA
P
D
T
A
NCV2002 (Note 3)
Storage Temperature RangeT
ESD Protection at any Pin Human Body Model (Note 4)V
stg
ESD
1. Either or both inputs should not exceed the range of VEE – 300 mV to VEE + 7.0 V.
2. Maximum package power dissipation limits must be observed to ensure that the maximum junction temperature is not exceeded.
T
+ (PD R
JTA
3. NCV prefix is for automotive and other applications requiring site and change control.
)
JA
4. ESD data available upon request.
DC ELECTRICAL CHARACTERISTICS (V
Rating
Input Offset Voltage
V
= 0.45 V, VEE = −0.45 V
CC
VCC = 1.5 V, VEE = −1.5 V
VCC = 2.5 V, VEE = −2.5 V
Input Offset Voltage Temperature Coefficient (RS = 50)
Input Bias Current (VCC = 1.0 V to 5.0 V)I
Input Common Mode Voltage RangeV
Large Signal Voltage Gain
VCC = 0.45 V, VEE = −0.45 V
V
CC
VCC = 2.5 V, VEE = −2.5 V
Output Voltage Swing, High State Output (VID = + 0.5 V)
TA = T
VCC = 0.45 V, VEE = −0.45 V
VCC = 1.5 V, VEE = −1.5 V
VCC = 2.5 V, VEE = −2.5 V
= 25°C
T
A
T
= 0°C to 70°C
A
T
= T
to T
A
low
T
= 25°C
A
T
= 0°C to 70°C
A
TA = T
T
TA = 0°C to 70°C
T
TA = T
R
= 1.5 V, VEE = −1.5 V
R
R
to T
low
= 25°C
A
= T
A
= 10 k
L
= 10 k
L
= 10 k
L
high
low
low
low
to T
to T
to T
R
R
R
R
R
R
= 10 k
L
= 2.0 k
L
= 10 k
L
= 2.0 k
L
= 10 k
L
= 2.0 k
L
high
high
high
high
= 2.5 V, VEE = −2.5 V, VCM = VO = 0 V, RL to Gnd, TA = 25°C, unless otherwise noted)
CC
SymbolMinTypMaxUnit
V
IO
VIO / T−8.0−V/°C
IB
ICR
A
VOL
V
OH
7.0V
– 300 mV to 7.0 VV
EE
– 300 mV to 7.0 VV
EE
Indefinitesec
150°C
235
340
°C/W
mW
°C
−40 to 105
−40 to 125
−65 to 150°C
2000V
−6.0
−8.5
−9.5
−6.0
−7.0
−7.5
−6.0
−7.5
−7.5
0.5
−
−
0.5
−
−
0.5
−
−
6.0
8.5
9.5
6.0
7.0
7.5
6.0
7.5
7.5
−10−pA
−VEE to V
−
−
10
0.40
0.35
1.45
1.40
2.45
2.40
0.442
0.409
1.494
1.473
2.493
2.469
CC
40
40
40
−V
−
−
−
−
−
−
−
−
−
mV
kV/V
V
http://onsemi.com
2
NCS2002, NCV2002
DC ELECTRICAL CHARACTERISTICS (V
= 2.5 V, VEE = −2.5 V, VCM = VO = 0 V, RL to Gnd, TA = 25°C, unless otherwise noted)
CC
RatingUnitMaxTypMinSymbol
Output Voltage Swing, Low State Output (VID = − 0.5 V)
TA = T
VCC = 0.45 V, VEE = −0.45 V
VCC = 1.5 V, VEE = −1.5 V
VCC = 2.5 V, VEE = −2.5 V
low
to T
high
R
= 10 k
L
R
= 2.0 k
L
R
= 10 k
L
= 2.0 k
R
L
R
= 10 k
L
R
= 2.0 k
L
Common Mode Rejection Ratio (Vin = 0 to 5.0 V)
TA = T
low
to T
high
Power Supply Rejection Ratio (VCC = 0.5 V to 2.5 V, VEE = −2.5 V)
TA = T
low
to T
high
Output Short Circuit Current
VCC = 0.45 V, VEE = −0.45 V, VID = 0.4 V
Source Current High Output State
Sink Current Low Output State
= 1.5 V, VEE = −1.5 V, VID = 0.5 V
V
CC
Source Current High Output State
Sink Current Low Output State
V
= 2.5 V, VEE = −2.5 V, VID = 0.5 V
CC
Source Current High Output State
Sink Current Low Output State
Power Supply Current (Per Amplifier, VO = 0 V)
TA = T
VCC = 0.5 V to VEE = −0.5 V
VCC = 1.5 V to VEE = −1.5 V
VCC = 2.5 V to VEE = −2.5 V
low
to T
high
Venable = V
Venable = V
Venable = V
Venable = V
Venable = V
Venable = V
CC
EE
CC
EE
CC
EE
Enable Input Threshold Voltage (VCC = 2.5 V, VEE = −2.5 V)