ON Semiconductor NCP1308 Technical data

s
查询NCP1052供应商
NCP1308
PWM Current−Mode Controller for Free−Running Quasi−Resonant Operation
The Dynamic Self−Supply (DSS) drastically simplifies the transformer design in avoiding the use of an auxiliary winding to supply the NCP1308. This feature is particularly useful in applications where the output voltage varies during operation (e.g. battery chargers). Thanks to its high−voltage technology, the IC is directly connected to the high−voltage DC rail. As a result, the short−circuit trip point is not dependent upon any VCC auxiliary level.
The transformer core reset detection is done through an auxiliary winding which, brought via a dedicated pin. If an OVP is detected on the VCC pin, the IC permanently latches off.
Finally, the continuous feedback signal monitoring implemented with an Overcurrent fault Protection circuitry (OCP) makes the final design rugged and reliable.
Features
Free−Running Borderline/Critical Mode Quasi−Resonant Operation
Current−Mode with Adjustable Skip Cycle Capability
Dynamic Self−Supply Type of V
Auto−Recovery Overcurrent Protection
Improved UVLO for V
CC
Latching Overvoltage Protection on V
500 mA Peak Current Source/Sink Capability
Internal 1.0 ms Soft−Start
Internal 10 ms Minimum T
Adjustable Skip Level
Internal Temperature Shutdown
Internal Leading Edge Blanking
Direct Optocoupler Connection
SPICE Models Available for TRANsient Analysis
This is a Pb−Free Device
T ypical Applications
AC−DC Adapters for Notebooks, etc.
Offline Battery Chargers
Consumer Electronics (DVD Players, Set−Top Boxes, TVs, etc.)
Auxiliary Power Supplies (USB, Appliances, TVs, etc.)
CC
below 10 V
CC
OFF
http://onsemi.com
MARKING
8
1
SOIC−8
DR SUFFIX
CASE 751
A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package
PIN CONNECTIONS
Dmg
1
FB
2
CS
3
GND
4
(Top View)
ORDERING INFORMATION
Device Package Shipping
NCP1308DR2G SOIC−8
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
DIAGRAM
8
1308
ALYW
G
1
HV
8
7
V
6
CC
Drv
5
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev . 2
1 Publication Order Number:
NCP1308/D
NCP1308
Universal Network
+
NCP1308
1 8 2 3 4
*Please refer to the application information section.
7 6
5
R*
12 V @ 1 A
+
GND
+
Y1 Type
Figure 1. Typical Application Schematic
PIN FUNCTION DESCRIPTION
Pin Symbol Function Description
1 Dmg Core reset detection The auxiliary FLYBACK signal ensures discontinuous operation.
2 FB Sets the peak current setpoint By connecting an optocoupler to this pin, the peak current setpoint is adjusted
3 CS Current sense input and skip
4 GND The IC ground
5 Drv Driving pulses The driver’s output to an external MOSFET.
6 V
7
8 HV High−voltage pin Connected to the high−voltage rail, this pin injects a constant current into the V
CC
NC
cycle level selection
Supplies the IC This pin is connected to an external bulk capacitor of typically 10 mF. If an auxiliary
This unconnected pin ensures adequate creepage distance.
accordingly to the output power demand. By bringing this pin below the internal skip level, the device shuts off.
This pin senses the primary current and routes it to the internal comparator via an LEB By inserting a resistor in series with the pin, you control the level at which the skip operation takes place.
winding brings this pin above 16 V typical, the circuit permanently latches off.
bulk capacitor.
CC
http://onsemi.com
2
HV
V
CC
GND
7 mA
To Internal
Supply
PON
+
+
12 V 10 V
5.3 V (Fault)
Fault
Mngt.
50 us
Filter
16 V
OVP
NCP1308
+
+
VUVLO
Dmg
10 us
Blanking
+
+
S
Q
S
Q
R
R
+
+
50 mV
Resd
10 V
Driver src = 20 sink = 10
To internal supply
Soft−Start = 1 ms
+
/3
1 V
200 mA
when DRV
Overload?
5 us
Timeout
Time
Reset
Dmg
is OFF
380 ns
LEB
Dmg
Drv
20k
FB
CS
Figure 2. Internal Circuit Architecture
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage VCC, Drv 20 V Maximum Voltage on all other pins except Pin 8 (HV), Pin 6 (VCC) and Pin 5 (Drv) and
Pin 1 (Dmg)
Maximum Current into all pins except VCC (6), HV (8) and Dmg (1) when 10 V ESD diodes
are activated Maximum Current in Pin 1 Idem +3.0/−2.0 mA Thermal Resistance, Junction−to−Case R Thermal Resistance, Junction−to−Air R Maximum Junction Temperature TJ Temperature Shutdown 155 °C Hysteresis in Shutdown 30 °C Storage Temperature Range −60 to +150 °C ESD Capability, Human Body Model (All pins except HV) 2.0 kV ESD Capability, Machine Model 200 V Maximum Voltage on Pin 8 (HV), Pin 6 (VCC) Decoupled to Ground with 10 mF V Minimum Voltage on Pin 8 (HV), Pin 6 (VCC) Decoupled to Ground with 10 mF V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
−0.3 to 10 V
5.0 mA
q
JC
q
JA
MAX
HVMAX
HVMIN
57 °C/W 178 °C/W 150 °C
500 V
40 V
http://onsemi.com
3
NCP1308
ELECTRICAL CHARACTERISTICS (For typical values T
= 25°C, for min/max values TJ = 0°C to +125°C, Max TJ = 150°C,
J
VCC = 11 V unless otherwise noted.)
Characteristic Pin Symbol Min Typ Max Unit
DYNAMIC SELF SUPPL Y
VCC Increasing Level at which the Current Source Turns−Off 6 VCC VCC Decreasing Level at which the Current Source Turns−On 6 VCC VCC Decreasing Level at which the Latchoff Phase Ends 6 VCC
OFF
ON
latch
VCC Level at which pulses are disabled 6 VUVLO VCCON −
10.8 12 12.9 V
9.1 10 10.6 V
5.3 V
V
200 mV
Internal IC Consumption, No Output Load on Pin 5, F
= 60 kHz 6 ICC1 1.0 1.3
SW
(Note 1)
Internal IC Consumption, 1.0 nF Output Load on Pin 5, F
= 60 kHz 6 ICC2 1.6 2.0
SW
(Note 1)
Internal IC Consumption, Latchoff Phase, VCC = 6.0 V 6 ICC3 330 mA
INTERNAL STARTUP CURRENT SOURCE ( TJ = 0°C)
High−Voltage Current Source, VCC = 10 V 8 IC1 4.3 7.0 9.6 mA High−Voltage Current Source, VCC = 0 8 IC2 8.0 mA
DRIVE OUTPUT
Output Voltage Rise−T ime @ CL = 1.0 nF, 10−90% of Output Signal 5 T Output Voltage Fall−T ime @ CL = 1.0 nF, 10−90% of Output Signal 5 T Source Resistance 5 R Sink Resistance 5 R
r
f OH OL
40 ns
20 ns
12 20 36 W
5.0 10 20 W
CURRENT COMPARATOR
Input Bias Current @ 1.0 V Input Level on Pin 3 3 I Maximum Internal Current Setpoint 3 I Propagation Delay from Current Detection to Gate OFF State 3 T Leading Edge Blanking Duration 3 T
IB
Limit
DEL LEB
0.02 mA
0.92 1.0 1.12 V
100 160 ns
380 ns
Internal Current Offset Injected on the CS Pin During OFF Time 3 Iskip 200 mA
OVERVOLTAGE SECTION
Voltage on the VCC above which the controller latches off 6 VOVP 14.3 16 17.8 V Integration Time Constraint on the OVP comparator 6 Tint 50 ms
FEEDBACK SECTION (VCC = 11 V, Pin 5 loaded by 1.0 kW)
Internal Pullup Resistor 2 Rup 20 kW Pin 3 to Current Setpoint Division Ratio Iratio 3.3 − Internal Soft−Start Tss 1.0 ms
DEMAGNETIZATION DETECTION BLOCK
Input Threshold Voltage (Vpin 1 Decreasing) 1 V Hysteresis (Vpin 1 Decreasing) 1 V
th H
35 50 90 mV
20 mV
Input Clamp Voltage
High State (Ipin 1 = 3.0 mA)
Low State (Ipin 1 = −2.0 mA) Dmg Propagation Delay 1 T Internal Input Capacitance at Vpin 1 = 1.0 V 1 C Minimum T
(Internal Blanking Delay After TON) 1 T
OFF
1 1
VC
VC
dem
blank
par
H L
8.0
−0.9
10
−0.7
12
−0.5
210 ns
10 pF
10 ms
Timeout After Last Dmg Transition 1 Tout 5.0 ms
1. Max value at TJ = 0°C, please see characterization curves.
mA
mA
V
http://onsemi.com
4
NCP1308
120
V
, (mV)
5
1.20
V
, (V)
5
TYPICAL CHARACTERISTICS
100
80
60
TH
40
20
0
−25 0 25 50 75 100 125 TEMPERATURE (°C)
Figure 3. Demagnetization Threshold
vs. Temperature
18
18
17
17
CC
16
1.15
1.10
, (V)
1.05
limit
I
1.00
0.95
0.90
−25 0 25 50 75 100 12 TEMPERATURE (°C)
Figure 4. Maximum Peak Current Setpoint
vs. Temperature
1.60
1.40
1.20
1.00
, (mA)
CC1
I
0.80
16
15
−25 0 25 50 75 100 125 TEMPERATURE (°C)
Figure 5. OVP Level Threshold vs. Temperature
2.00
1.95
1.90
1.85
1.80
1.75
, (mA)
CC2
1.70
I
1.65
1.60
1.55
1.50
−25 0 25 50 75 100 125 TEMPERATURE (°C)
Figure 7. Internal IC Consumption (1.0 nF Load)
0.60
0.40
−25 0 25 50 75 100 12 TEMPERATURE (°C)
Figure 6. Internal IC Consumption
(No Output Load) vs. Temperature
vs. Temperature
http://onsemi.com
5
Loading...
+ 11 hidden pages