ON Semiconductor NCN4555 User Manual

NCN4555

1.8V / 3V SIM Card Power
Supply and Level Shifter

The NCN4555 is a level shifter analog circuit designed to translate
the voltages between a SIM Card and an external microcontroller or
MPU. A built−in LDO−type DC−DC converter makes the NCN4555
useable to drive 1.8 V and 3.0 V SIM card. The device fulfills the
ISO7816−3 smart card interface standard as well as GSM 11.11 and
related (11.12 and 11.18) and 3G mobile requirements (IMT−2000/3G
UICC standard). With the STOP
be activated making the battery life longer. The Card power supply
voltage (SIM_V

Features

) is selected using a single pin (MOD_VCC).

CC

• Supports 1.8 V or 3.0 V Operating SIM Card

• The LDO is able to Supply More than 50 mA under 1.8 V and 3.0 V

• Built−in Pullup Resistor for I/O Pin in Both Directions

• All Pins are Fully ESD Protected According to ISO−7816

Specifications – ESD Protection on SIM Pins in Excess of 7 kV
(Human Body Model)

• Supports up to More than 5 MHz Clock

• Low−Profile 3x3 QFN−16 Package

• These are Pb−Free Devices*

Typical Applications

• SIM Card Interface Circuit for 2G, 2.5G and 3G Mobile Phones

• Identification Module

• Smart Card Readers

• Wireless PC Cards

1.6 V to 5.5 V 2.7 V to 5.5 V

0.1mF0.1mF

V

BB

GND

pin a low current shutdown mode can

5

http://onsemi.com

MARKING
DIAGRAM

16

1

QFN−16

MN SUFFIX

1

(Note: Microdot may be in either location)

CASE 488AK

A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package

NCN
4555

ALYWG

G

ORDERING INFORMATION

Device Package Shipping

NCN4555MNG QFN−16

(Pb−Free)

NCN4555MNR2G QFN−16

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

123 Units / Rail

3000/Tape & Reel

†

3

V

DD

1

STOP

2

14

13

15

MOD_V

RST

CLK

I/O

P3

P2

P1

P0

MPU or Microcontroller

SIM Card

Detect

GND

CC

GND

10

SIM_V

SIM_RST

NCN4555

SIM_CLK

SIM_I/O

CC

1
2
3
4

1mF

V

CC

RST
CLK
C4

DET DET

GND

7

9

11

8

GND

I/O
C8

5
6
7
8

Figure 1. Typical Interface Application

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2010

October, 2010 − Rev. 3

1 Publication Order Number:

NCN4555/D

NCN4555

NC I/O RST CLK

16 15 14 13

Exposed Pad (EP)

STOP

MOD_V

CC

V

DD

(1.6 V to 5.5 V)

STOP

MOD_V

CC

1

2

12

11

NC

SIM_CLK

NCN4555

V

DD

NC

3

4

10

9

GND

SIM_RST

5678

V

NC SIM_VCCSIM_I/O

BAT

Figure 2. QFN−16 Pinout (Top View)

(2.7 V to 5.5 V)

V

BAT

5

GND

7

SIM_V

CC

1

50 mA LDO

1.8 V

/3.0 V

2

3

RST

CLK

I/O

14

13

15

GND

18 kW

I/O

DATADATA

I/O

GND

Figure 3. NCN4555 Block Diagram

14 kW

GND

GND

GND

9

11

8

10

SIM_RST

SIM_CLK

SIM_I/O

GND

http://onsemi.com

2

NCN4555

PIN DESCRIPTIONS

PIN Name Type Description

1 STOP INPUT Power Down Mode pin:

2 MOD_V

3 V

DD

CC

INPUT The signal present on this pin programs the SIM_VCC value:

POWER This pin is connected to the system controller power supply. It configures the level shifter input

4 NC No Connect

5 V

BAT

POWER DC−DC converter supply input. The input voltage ranges from 2.7V up to 5.5V. This pin has to be

6 NC No Connect

7 SIM_V

CC

POWER This pin is connected to the SIM card power supply pin. An internal LDO converter is

8 SIM_I/O INPUT/

OUTPUT

9 SIM_RST OUTPUT This pin is connected to the RESET pin of the card connector. A level translator adapts the

10 GND GROUND This pin is the GROUND reference for the integrated circuit and associated signals. Care must be

11 SIM_CLK OUTPUT This pin is connected to the CLOCK pin of the card connector. The CLOCK (CLK) signal comes

12 NC No Connect

13 CLK INPUT The clock signal, coming from the external controller, must have a Duty Cycle within the Min/Max

14 RST INPUT The RESET signal present at this pin is connected to the SIM card through the internal level

15 I/O INPUT/

OUTPUT

16 NC No Connect

STOP

= Low ³ Low current shutdown mode activated

STOP

= High ³ Normal Operation

A Low level on this pin resets the SIM interface, switching off the SIM_V

MOD_V
MOD_V

= Low ³ SIM_VCC = 1.8 V

CC

= High ³ SIM_V

CC

CC

= 3 V

CC

.

stage to accept the signals coming from the microprocessor. A 0.1 mF capacitor shall be used to
bypass the power supply voltage. When V
NCN4555 comes into a shutdown mode.

is below 1.1 V typical the SIM_VCC is disabled. The

DD

bypass by a 0.1 mF capacitor.

programmable by the external MPU to supply either 1.8 V or 3.0 V output voltage. An external

1.0 mF minimum ceramic capacitor recommended must be connected across SIM_V
During a normal operation, the SIM_VCC voltage can be set to 1.8 V followed by a 3.0 V value, or

and GND.

CC

can start directly to any of these two values.

This pin handles the connection to the serial I/O of the card connector. A bidirectional level
translator adapts the serial I/O signal between the card and the micro controller. A 14 kW (typical)
pullup resistor provides a High impedance state for the SIM card I/O link.

external Reset (RST) signal to the SIM card.

taken to avoid voltage spikes when the device operates in a normal operation.

from the external clock generator, the internal level shifter being used to adapt the voltage defined
for the SIM_V

CC

.

values defined by the specification (typically 50%). The built−in level shifter translates the input
signal to the external SIM card CLK input.

shifter which translates the level according to the SIM_V

programmed value.

CC

This pin is connected to an external microcontroller or cellular phone management unit. A
bidirectional level translator adapts the serial I/O signal between the smart card and the external
controller. A built−in constant 18 kW (typical) resistor provides a high impedance state when not
activated.

http://onsemi.com

3

NCN4555

ATTRIBUTES

Characteristics Values

ESD protection
HBM, SIM card pins (7, 8, 9, 10 & 11) (Note 1)
HBM, All other pins (Note 1)
MM, SIM card pins (7, 8, 9, 10 & 11) (Note 2)
MM, All other pins (Note 2)
CDM, SIM card pins (7, 8, 9, 10 & 11) (Note 3)
CDM , All other pins (Note 3)

Moisture sensitivity (Note 4) QFN−16 Level 1

Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in

Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test

1. Human Body Model, R =1500 W, C = 100 pF.

2. Machine Model.

3. CDM, Charged Device Model.

4. For additional information, see Application Note AND8003/D.

MAXIMUM RATINGS (Note 5)

Rating

LDO Power Supply Voltage V

Power Supply from Microcontroller Side V

External Card Power Supply SIM_V

Digital Input Pins V

Digital Output Pins V

SIM card Output Pins V

QFN−16 Low Profile package
Power Dissipation @ T
Thermal Resistance Junction−to−Air

= + 85°C

A

Operating Ambient Temperature Range T

Operating Junction Temperature Range T

Maximum Junction Temperature T

Storage Temperature Range T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

5. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T

Symbol Value Unit

BAT

DD

CC

in

I

in

out

I

out

out

I

out

P

D

R

q

JA

A

J

Jmax

stg

> 7 kV

> 2 kV
> 600 V
> 200 V

> 2 kV
> 600 V

−0.5 ≤ V

≤ 6 V

BAT

−0.5 ≤ VDD ≤ 6 V

−0.5 ≤ SIM_VCC ≤ 6 V

−0.5 ≤ Vin ≤V

but < 6.0

DD

+ 0.5

±5

−0.5 ≤ V

≤ VDD + 0.5

out

but < 6.0

±10

−0.5 ≤ V

≤ SIM_VCC + 0.5

out

but < 6.0

15 (internally limited)

440

90

−40 to +85 °C

−40 to +125 °C

+125 °C

−65 to + 150 °C

= +25°C

A

V

mA

V

mA

V

mA

mW

°C/W

http://onsemi.com

4