ON Semiconductor NCL35076 User manual

Page 1
CCM Buck Controller for
l
Precise Current Regulation and Wide Analog Dimming
NCL35076
PWM dimming is also provided in case that constant LED color temperature is required. NCL35076 ensures high system reliability with LED short protection, over current protection and thermal shutdown.
Features
Wide Analog Dimming Range: 1~100%
Low CC Tolerance: ±2% at 100% Load & ±20% at 1% Load
Low System BOM
LED Off Mode at Standby
Low Standby Current
PWM Dimming Available
Gate Sourcing and Sinking Current of 0.5 A/0.8 A
Robust Protection Features
LED Short ProtectionOver Current ProtectionThermal ShutdownV
Over Voltage Protection
DD
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1
SOIC−8 NB
CASE 751
MARKING DIAGRAM
L35076AA
AWLYYWW
L30076 = Specific Device Code AA = Default Trimming Option A = Assembly Location WL = Wafer Lot Traceability Code YYWW = 4 Digit Data Code
PIN ASSIGNMENT
PGBIAS
Typical Applications
LED Lighting System
© Semiconductor Components Industries, LLC, 2020
April, 2021 − Rev. 2
DRVCSZCD VDDSG
DIMFB
(Top View)
ORDERING INFORMATION
Device Package Shipping
NCL35076AADR2G SOIC−8 NB 3000 /
Tape & Ree
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
1 Publication Order Number:
NCL35076/D
Page 2
NCL35076
APPLICATION SCHEMATIC
30~200 Vin
V
AC
Dimming
Signal
PFC
Flyback
FB
DIM
DRV
CSZCD
NCL35076
SG
PG
BIAS
VDD
External source
Figure 1. Application Schematic
BLOCK DIAGRAM
RCS
VDD
BIAS
FB
DIM
V
CSZCD
10 V /
3.3 V
8 V
LDO
V
FB
Toff generator
OTA
Reference control PWM dimming control
Standby mode control
V
DD
Over voltage protection
LED short protection
Over current protection
T
J
Thermal Shutdown
Soft start
V
V
LED
REF
V
DD−ON
V
TO FF.SS
V
TO FF.FB
+ 30 mV
V
PDIM
V
SHUTDOWN
V
CS.LIM
V
PDIM
V
ON
V
OFF
Protection
AR control
|| V
SHUTDOWN
V
PWM
Q
S R
Precise LED
current calculator
V
SHUTDOWN
V
DRV
CS.LIM
CSZCD
PG
SG
Figure 2. Simplified Block Diagram
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Page 3
NCL35076
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Function
Description
1
BIAS
3.3 V BIAS
This pin is 3.3 V LDO output to bias the internal digital circuit
2
CSZCD
CS and ZCD Sensing
This pin detects the switch current and the inductor current zero cross time
3SGSignal Ground
Signal Ground is close to control pin circuit such as CSZCD, DIM and FB
4FBFeedback
Output of feedback OTA
5
DIM
Dimming Input
Dimming signal is provided to this pin
6
VDD
Power Supply
IC operating current is supplied to this pin
7
DRV
Output Drive
This pin is connected to drive external switch
8PGPower Ground
Power Ground is close to the capacitors at BIAS and VDD pin
PIN CONFIGURATION
(Top View)
Figure 3. Pin Configuration
PGBIAS DRVCSZCD VDDSG DIMFB
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Page 4
NCL35076
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
VDD, DRV Pin Voltage Range
V
−0.3 to 30
V
DIM, FB, CSZCD, BIAS Pin Voltage Range
V
−0.3 to 5.5
V
Maximum Power Dissipation (TA < 50°C)
P
550
mW
Maximum Junction Temperature
T
150
C
Storage Temperature Range
T
−55 to 150
C
Junction−to−Ambient Thermal Impedance
R
145
C/W
ESD Capability, Human Body Model (Note 2)
ESD
2
kV
ESD Capability, Charged Device Model (Note 2)
ESD
1
kV
RECOMMENDED OPERATING RANGES
Parameter
Symbol
Min
Max
Unit
Junction Temperature
TJ−40
125
C
ELECTRICAL CHARACTERISTICS (V
= 15 V and TJ = −40~125°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VDD SECTION
IC Turn−On Threshold Voltage
V
9.3
10.0
10.7
V
IC Turn−Off Threshold Voltage
V
7.4
8.0
8.6
V
Startup Current
VDD = V
− 1.6 V
I
250
400
A
Operating Current
I
6.5
8.0
mA
Standby Current
I
200
300
A
BIAS SECTION
3.23
3.30
3.37
V
TJ = 25~100°C (Note 4)
3.25
3.30
3.35
V
DIM SECTION
DIM Voltage for 100% V
V
= 2.6 V
V
)
2.44
2.50
2.56
V
DIM Voltage for 99% V
V
)
2.400
2.475
2.528
V
Standby Enabling DIM Voltage
V
5075100
mV
Standby Disabling DIM Voltage
V
60
100
140
mV
Standby Delay Time
t
91011
ms
FB SECTION
FB OTA Source Current
IFB = (V
− V
) x g
x 12.5
I
−14.0
−11.5
−9.0
A
FB OTA Sink Current
IFB = (V
− V
) x g
x 12.5
I
9.0
11.5
14.0
A
SPECIFICATIONS
MV(MAX)
LV(MAX)
D(MAX)
J(max)
STG
θJA
HBM CDM
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters.
2. This device series incorporates ESD protection and is tested by the following methods:
− ESD Human Body Model per JEDEC Standard JESD22−A114
− ESD Charged Device Model per JEDEC Standard JESD22−C101
− Latch−up Current Maximum Rating ±100 mA per JEDEC Standard JESD78
°
°
°
°
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
DD
DD(ON)
DD(OFF)
DD(ON)
BIAS Voltage V
REF
REF
DIM
DIM(REF−MAX DIM(MAX−EFF
DIM(SB−ENA)
DIM(SB−DIS)
SB(DELAY)
DD(ST)
DD(OP)
DD(SB)
BIAS
m
m
LED
REF
V
= 120 mV, V
REF
V
= 40 mV, V
REF
LED
LED
REF
LED
M(FB)
= 80 mV
M(FB)
= 80 mV
FB(SOURCE)
FB(SINK)
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4
m
m
Page 5
NCL35076
E
FB OTA Transconductance
g
= IFB / {(V
− V
) x 12.5}
g
182328
mho
FB OTA High Voltage
V
= 120 mV, V
= 80 mV
V
4.7−−
V
FB Minimum Clamping Voltage
V
= 0 mV, V
= 80 mV
V
0.4
0.5
0.6
V
CS SECTION
CS Regulation
V
)
175
180
185
mV
CS Current Ripple Voltage
V
253035
mV
CS Current Limit Minimum
V
728088
mV
DUTY SECTION
Leading Edge Blanking Time at
t
360
400
440
ns
Maximum Ton Time
t
455055
s
Minimum Toff T ime
VFB = 3.8 V
t
400
850
1000
ns
Maximum Toff Time
VFB = 0.5 V
t
1.17
1.30
1.43
ms
Maximum FB Voltage for Min. Toff
V
)
3.30
3.43
3.55
V
Minimum FB Voltage for Max. Toff
V
)
0.9
1.1
1.3
V
DRV SECTION
DRV Low Voltage
V
−−0.2
V
DRV High Voltage
VDD = 15 V
V
111213
V
DRV Rising Time
C
= 3.3 nF
t
60
100
145
ns
DRV Falling Time
C
= 3.3 nF
t
2555105
ns
AUTO RESTART SECTION
Auto Restart Time at Protection
t
0.9
1.0
1.1
s
VDD OVER VOLTAGE PROTECTION SECTION
VDD Over Voltage Threshold Voltage
V
222324
V
SHORT LED PROTECTION SECTION
SLP Monitoring Triggering Delay
t
)
182022
ms
SLP Monitoring Disable Time at
t
10.8
12.0
13.2
ms
OVER CURRENT PROTECTION SECTION
CS Over Current Protection Thresh-
V
0.4
0.5
0.6
V
THERMAL SHUTDOWN SECTION
Thermal Shut Down Temperature
TSD130
150
170°C
Thermal Shut Down Hysteresis
T
253035°C
LECTRICAL CHARACTERISTICS (V
Parameter UnitMaxTypMinSymbolTest Conditions
FB SECTION
Turn−on
= 15 V and TJ = −40~125°C unless otherwise specified) (continued)
DD
M(FB)
REF REF
DRV DRV
REF
LED
LED
LED
M(FB)
FB(HIGH)
FB(CLP)
CS(REG−MAX
CS(RIPPLE)
CS(LIM−MIN)
LEB(TON)
ON(MAX) OFF(MIN)
OFF(MAX)
FB(MAX−TOFF
FB(MIN−TOFF
DRV(LOW)
DRV(HIGH)
DRV(R) DRV(F)
m
m
AR(PROT)
DD(OVP)
Time
Startup
old
SLP(MON−DEL
SLP(MON−DIS)
CS(OCP)
(Note 3)
(Note 3)
SD(HYS)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Guaranteed by design.
4. Guaranteed by characterization.
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Page 6
NCL35076
1.006
1.006
CS(LIM−MIN)
DD(OVP)
TYPICAL CHARACTERISTICS
(These characteristic graphs are normalized at TA = 25°C)
1.004
1.002
1
0.998
Normalized at 255C
0.996
0.994
−40 −20 0 20 40 60 80 100 120 140
Temperature (5C)
Figure 4. V
1.03
1.02
1.01
1
0.99
Normalized at 255C
0.98
0.97
−40 −20 0 20 40 60 80 100 120 140
vs. Temperature Figure 5. V
BIAS
Temperature (5C)
1.004
1.002
1
0.998
Normalized at 255C
0.996
0.994
−40 −20 0 20 40 60 80 100 120 140
Temperature (5C)
DIM(MAX)
1.006
1.004
1.002
1
0.998
Normalized at 255C
0.996
0.994
−40 −20 0 20 40 60 80 100 120 140
vs. Temperature
Temperature (5C)
Figure 6. g
1.006
1.004
1.002
1
0.998
Normalized at 255C
0.996
0.994
−40 −20 0 20 40 60 80 100 120 140
vs. Temperature Figure 7. V
M(FB)
Temperature (5C)
Figure 8. V
vs. Temperature Figure 9. V
CS(REG−MAX)
1.006
1.004
1.002
1
0.998
Normalized at 255C
0.996
0.994
−40 −20 0 20 40 60 80 100 120 140
vs. Temperature
Temperature (5C)
vs. Temperature
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Page 7
NCL35076
APPLICATION INFORMATION
General
NCL35076 provides wide analog dimming down to 1% with high CC accuracy. According to buck inductor, input voltage and output voltage, deep dimming down to
0.1~0.2% load can be achieved. Thanks to the ON semiconductor’s proprietary LED current calculation technique, NCL35076 is able to measure the current of LED load connected at input voltage node without the upper limit of the input voltage with high system reliability. LED current is sensed and regulated by internal zero input offset amplifiers so that NCL35076 performs precise CC regulation in the whole analog dimming range. Therefore, CC tolerance is tightly controlled in ±2% at 100% load and ±20% at 1% load.
Wide Analog Dimming
Wide analog dimming range is obtained by transitioning multi−mode between CCM and DCM according to the dimming condition. At full load condition, CCM with ±17% inductor current ripple minimizes the conduction loss with high efficiency and DCM is entered at light load condition to perform analog deep dimming. Dimming curve linearity is obtained by a digital compensator in the entire dimming range.
PWM Dimming
Analog dimming has benefits for less audible noise and flicker compared to PWM dimming. However, there is a need of PWM dimming method to keep the constant LED color temperature in specific applications. NCL35076 supports PWM dimming by simply inputting PWM dimming signal to DIM pin.
Precise CC Regulation
CC regulation is very important especially in programmable LED driver because the driver should keep precise CC control under the system variation of LED load, inductor, temperature, etc. Since NCL35076 applies zero input offset amplifiers at LED current calculator block and
OTA, CC tolerance is less than ±2% at 100% load and ±20% at 1% load in the system variation.
Soft start
Without soft start in the closed loop CC control, the LED current overshoot is easily occurred at startup so that the overshoot can affect a lifetime of LEDs and incur an undesirable flash. NCL35076 provides soft start technique to prevent the LED current overshoot by T
Standby Mode
When V
is lower than a standby threshold voltage for
DIM
time control.
OFF
10 ms, standby mode is triggered with LED turn−off and IC current consumption is minimized.
Auto Restart (AR) at Protection
Once protection is triggered, IC operation stops for 1 second and begins soft start operation after the auto restart time delay.
VDD Over Voltage Protection (OVP)
When VDD is higher than 23 V, over voltage protection is triggered.
Short LED Protection (SLP)
When LED is short circuited, the buck stage operates in CCM with maximum turn−off time. By detecting this condition, short LED protection is triggered.
Over Current Protection (OCP)
When CSZCD voltage exceeds the over current threshold voltage, switching is immediately shut down after leading edge blanking time in the short circuit condition of the inductor, the freewheeling diode or the LED load.
Thermal Shot Down (TSD)
When IC junction temperature is higher than 150°C, TSD is triggered and released when the temperature is lower than 120°C.
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Page 8
NCL35076
BASIC OPERATION
NCL35076 is the current mode buck controller in which DRV is off when V 30 mV) and DRV is on by T
is calculated based on V
V
LED
CSZCD
reaches to V
generator controlled by VFB.
OFF
in precise LED current
CSZCD
calculator block composed of zero input offset amplifiers and V block, V
which controls T inversely proportional to V V
FB
FB
DIM
is controlled by DIM signal. In reference control
REF
is obtained by below equation.
REF
* 0.25 V
V
DIM
[V] +
REF
time in T
. Therefore, T
FB
1.8
VFB* 1.1
− 0.25 V
V
DIM
I
=
LED
12.5 x R
V
ON
Q
S
V
OFF
R
V
LED
current calculator
V
REF
V
+ 30 mV
V
STANDBY
12.5
at OTA to generate V
generator. T
OFF
) 0.1
CS
V
PWM
V
CS.LIM
Precise LED
= I
x R
LED
LED
V
CS.LIM
V
is compared with V
LED
increases. T
Flyback
V
AC
T
OFF.SS
Soft
T
start
OFF.FB
V
FB
T
OFF
generator
OTA
Reference control
Standby mode control
V
REF
OFF
is set by below equation.
OFF
T
[ms] +
OFF
C
IN
CS.LIM
OFF
D
CS
(= V
REF
(eq. 1)
OFF
is shorter as
(eq. 2)
LED
C
LED
D
BUCK
L
BUCK
R
ZCD1
DRV
Q
BUCK
R
ZCD2
CSZCD
R
+
FB
is
CS
I
x R
210 mV
180 mV
80 mV
1.1 V
0.5 V
ABC
V
FB
0.75 V
0.25 V
0.1/0.07 5 V
2.5 V
V
CS.LIM
V
REF
Figure 11. Operation Mode vs. V
+ 30 mV
V
DIM
V
DIM
INDUCTOR
CS
A(CCM)
B(DCM)
t
DIM
Precise CC Regulation
The output of the precise LED current calculator, V is generated by analog sensing amplifiers and V compared with V
by OTA to generate VFB. Those
REF
LED
LED
is
sensing amplifiers and OTA have zero input offset compensation technique which performs the excellent CC regulation.
Table 1 shows CC tolerance measured by changing inductor (±20%), temperature (−10, 25, 90 °C), output voltage (10, 30, 50 V) and controller 150 pcs(3 lot variation) in 60 V input 75 W driver. As a result, CC tolerance with system variables at 1% deep dimming condition is less than ±20% and less than ±2.0% at full load condition.
,
Figure 10. NCL35076 Block Diagram
Wide Analog Dimming
NCL35076 operates in CCM at heavy load and in DCM at light load for a wide analog dimming. Figure 11 shows how NCL35076 operates with V
A: V
CS.LIM
follows V
REF
inductor current ripple at 2.5 V constant with same T
B: V
V
DIM
is clamped to 80 mV and doesn’t changed by
CS.LIM
. T
is lengthened for dimming as VFB is
OFF
in the CCM region.
OFF
.
DIM
+ 30 mV which is ±17%
. VFB is almost
DIM
decreased. Operating mode is transitioned from CCM to DCM at the boundary of A and B region.
C: When V
is pulled down to 0.5 V clamping voltage with min.
V
FB
LED current under open loop control. When V
is lower than 0.25 V, V
DIM
is set to 0 V and
REF
DIM
is further lower than 0.1/0.075 V, standby is triggered with LED turn−off.
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Figure 12. NCL35076 Dimming Curve and CC
Tolerance
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Page 9
Table 1. CC TOLERANCE (150 pcs)
Inductor : + 20%
Temp. : −10 / 25 / 90 5C
100% Load
50% Load
10% Load
5% Load
2% Load
1% Load
V
: 10 V
1.52
1.92
3.24
4.18
7.43
13.06
V
: 30 V
1.40
1.54
3.26
4.38
7.99
13.87
V
: 50 V
1.25
1.37
2.68
3.57
7.17
14.06
V
: 10 / 30 / 50 V
1.62
1.98
4.10
4.94
8.24
15.40
OUT OUT OUT
OUT
NCL35076
Standby Mode
Standby mode is triggered by V
as shown in
DIM
Figure 13.
A: When V
is lower than V
DIM
DIM(SB−ENA)
is shut down. So, LED lamps turn off.
B: After t
SB(DELAY)
(10 ms), standby mode is entered and
NCL35076 current consumption drops to I
C: When V
is higher than V
DIM
DIM(SB−DIS)
mode is immediately terminated and IC starts up.
A B C
100 mV V
75 mV V
V
DRV
t
SB(DELAY)
V
FB
DIM(SB−DIS)
DIM(SB−ENA)
Standby Mode
Figure 13. NCL35076 Standby Mode
Soft Start
During soft start operation, T T start up because T T regulation level and T
or T
OFF_SS
reaches to the steady state level, VFB is settled to the
OFF_SS
OFF_FB
OFF_SS
. T
is governed by T
OFF
decreases from t
is finally decided by T
OFF
the end of the soft start time, T doesn’t affect T
control anymore. Figure 14 shows how
OFF
is decided by either
OFF
OFF_SS
OFF(MAX)
reaches to 0 and
OFF_SS
the soft start operates.
, DRV block
.
DD(SB)
, standby
Time
in early
. When
OFF_FB
. In
t
OFF (MAX )
1300
V
FB
V
REF
V
LED
I
INDUCTOR
m
s
ZCD in DCM
A
Fast
SS
T
T
T
OFF
OFF.SS
OFF.FB
No ZCD in CCM
B
Slow
SS
C
Steady
State
Time
Figure 14. Soft Start Sequence
A: V
is pulled up as V
FB
is reduced quickly from t
is far below V
LED
OFF(MAX)
. T
REF
in Fast SS. Fast SS ends when inductor current zero cross (ZCD) is not detected.
B: Slow SS starts when there is no ZCD in CCM.
C: V
T
is closer to V
LED
is determined by T
OFF
, and VFB starts falling. Then,
REF
and the steady state starts.
OFF_FB
OFF_SS
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Page 10
NCL35076
Protections
When protection is triggered, all functional blocks stop
operating and begin to start up after 1 second AR time.
VDD Over Voltage Protection (OVP)
When VDD is higher than V
DD(OVP)
is triggered. Open LED protection can be implemented by VDD OVP when VDD is supplied by auxiliary winding in the buck inductor.
(23 V), VDD OVP
Over Current Protection (OCP)
When CSZCD voltage is higher than V after leading edge blanking time, t
LEB(TON)
immediately shuts down.
t
V
CSZCD
V
CS(OCP)
Figure 15. OCP Block
LE B(TON)
CS(OCP)
(0.5 V)
(400 ns), IC
OCP
Short LED Protection (SLP)
When LED load is short−circuited, demagnetizing time of the inductor is very long due to zero output voltage so that
is lengthened and TON is very short. If CCM and
T
OFF
t
OFF(MAX)
t
SLP(MON−DEL)
are detected for SLP monitoring time,
(20 ms), SLP is triggered. In order to prevent abnormal SLP triggering at startup, SLP monitoring is disabled for t
SLP(MON−DIS)
(12 ms) after 1
switching begins.
Thermal Shut Down (TSD)
When the junction temperature is higher than T system shuts down and the junction temperature is monitored at every 1 second delay time (AR time). When the temperature is lower than T
SD
– T
SD(HYS)
restarts.
SD
, the system
st
, the
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Page 11
NCL35076
APPENDIX: DIMMING CURVE AND CC TOLERANCE WITH SYSTEM VARIABLES
− System: NCL35076 75 W (V
: 60V / V
IN
: 10 ~ 50V / I
OUT
− Temperature variation: −10 / 25 / 90 °C
− Inductance variation: ±20% (120 uH ~ 180 uH)
− Output Voltage: 10 / 30 / 50 V
− NCL35076 Controller: 150 pcs (3 lot variation)
Wide Output Condition (10/30/50V)
NCL35076 150pcs (3lot) + Temp & Inductor variation
+/− 20%
+/− 10%
+/− 6%
Single Output Condition (10V)
NCL35076 150pcs (3lot) + Temp & Inductor variation
+/− 15%
+/− 8%
+/− 5%
OUT(MAX)
: 1.5 A)
+/− 5%
+/− 4%
+/− 3%
+/− 3%
Single Output Condition (30V)
NCL35076 150pcs (3lot) + Temp & Inductor variation
+/− 15%
+/− 8%
+/− 5%
Single Output Condition (50V)
NCL35076 150pcs (3lot) + Temp & Inductor variation
+/− 15%
+/− 8%
+/− 5%
Figure 16. CC Tolerance (150 pcs)
+/− 4%
+/− 4%
+/− 3%
+/− 3%
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Page 12
NCL35076
PCB LAYOUT GUIDANCE
(PCB Layout Guidance)(75−W Demo Board Schematic)
2
Jumper
1
4
3
Jumper
L
(75−W Demo Board PCB Layout − Bottom)
Figure 17. Layout Guidance
Jumper
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Page 13
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
8
1
SCALE 1:1
B
Y
Z
H
X A
58
S
1
4
G
D
0.25 (0.010) Z
M
SOLDERING FOOTPRINT*
7.0
0.275
SXS
Y
0.25 (0.010)
C
SEATING PLANE
0.060
0.155
0.10 (0.004)
1.52
4.0
CASE 75107
M
M
Y
N
SOIC8 NB
ISSUE AK
K
X 45
_
M
J
MARKING DIAGRAM*
8
XXXXX ALYWX
1
XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package
8
XXXXX ALYWX
G
1
IC
IC
(PbFree)
DATE 16 FEB 2011
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. 75101 THRU 75106 ARE OBSOLETE. NEW STANDARD IS 75107.
MILLIMETERS
DIMAMIN MAX MIN MAX
4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8
____
N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244
INCHES
GENERIC
8
XXXXXX
AYWW
1
Discrete
XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
8
XXXXXX
AYWW
1
Discrete
(PbFree)
G
0.6
0.024
1.270
0.050
SCALE 6:1
ǒ
inches
mm
Ǔ
*This information is generic. Please refer to
device data sheet for actual part marking. PbFree indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
98ASB42564B
SOIC8 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
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Page 14
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
STYLE 5:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. DRAIN
5. GATE
6. GATE
7. SOURCE
8. SOURCE
STYLE 9:
PIN 1. EMITTER, COMMON
2. COLLECTOR, DIE #1
3. COLLECTOR, DIE #2
4. EMITTER, COMMON
5. EMITTER, COMMON
6. BASE, DIE #2
7. BASE, DIE #1
8. EMITTER, COMMON
STYLE 13:
PIN 1. N.C.
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 17:
PIN 1. VCC
2. V2OUT
3. V1OUT
4. TXE
5. RXE
6. VEE
7. GND
8. ACC
STYLE 21:
PIN 1. CATHODE 1
2. CATHODE 2
3. CATHODE 3
4. CATHODE 4
5. CATHODE 5
6. COMMON ANODE
7. COMMON ANODE
8. CATHODE 6
STYLE 25:
PIN 1. VIN
2. N/C
3. REXT
4. GND
5. IOUT
6. IOUT
7. IOUT
8. IOUT
STYLE 29:
PIN 1. BASE, DIE #1
2. EMITTER, #1
3. BASE, #2
4. EMITTER, #2
5. COLLECTOR, #2
6. COLLECTOR, #2
7. COLLECTOR, #1
8. COLLECTOR, #1
STYLE 2:
PIN 1. COLLECTOR, DIE, #1
2. COLLECTOR, #1
3. COLLECTOR, #2
4. COLLECTOR, #2
5. BASE, #2
6. EMITTER, #2
7. BASE, #1
8. EMITTER, #1
STYLE 6:
PIN 1. SOURCE
2. DRAIN
3. DRAIN
4. SOURCE
5. SOURCE
6. GATE
7. GATE
8. SOURCE
STYLE 10:
PIN 1. GROUND
2. BIAS 1
3. OUTPUT
4. GROUND
5. GROUND
6. BIAS 2
7. INPUT
8. GROUND
STYLE 14:
PIN 1. N−SOURCE
2. NGATE
3. PSOURCE
4. PGATE
5. PDRAIN
6. PDRAIN
7. NDRAIN
8. NDRAIN
STYLE 18:
PIN 1. ANODE
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. CATHODE
8. CATHODE
STYLE 22:
PIN 1. I/O LINE 1
2. COMMON CATHODE/VCC
3. COMMON CATHODE/VCC
4. I/O LINE 3
5. COMMON ANODE/GND
6. I/O LINE 4
7. I/O LINE 5
8. COMMON ANODE/GND
STYLE 26:
PIN 1. GND
2. dv/dt
3. ENABLE
4. ILIMIT
5. SOURCE
6. SOURCE
7. SOURCE
8. VCC
STYLE 30:
PIN 1. DRAIN 1
2. DRAIN 1
3. GATE 2
4. SOURCE 2
5. SOURCE 1/DRAIN 2
6. SOURCE 1/DRAIN 2
7. SOURCE 1/DRAIN 2
8. GATE 1
SOIC8 NB
CASE 75107
ISSUE AK
STYLE 3:
STYLE 7:
STYLE 11:
STYLE 15:
STYLE 19:
STYLE 23:
PIN 1. DRAIN, DIE #1
2. DRAIN, #1
3. DRAIN, #2
4. DRAIN, #2
5. GATE, #2
6. SOURCE, #2
7. GATE, #1
8. SOURCE, #1
PIN 1. INPUT
2. EXTERNAL BYPASS
3. THIRD STAGE SOURCE
4. GROUND
5. DRAIN
6. GATE 3
7. SECOND STAGE Vd
8. FIRST STAGE Vd
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
PIN 1. ANODE 1
2. ANODE 1
3. ANODE 1
4. ANODE 1
5. CATHODE, COMMON
6. CATHODE, COMMON
7. CATHODE, COMMON
8. CATHODE, COMMON
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. MIRROR 2
7. DRAIN 1
8. MIRROR 1
PIN 1. LINE 1 IN
2. COMMON ANODE/GND
3. COMMON ANODE/GND
4. LINE 2 IN
5. LINE 2 OUT
6. COMMON ANODE/GND
7. COMMON ANODE/GND
8. LINE 1 OUT
STYLE 27:
PIN 1. ILIMIT
2. OVLO
3. UVLO
4. INPUT+
5. SOURCE
6. SOURCE
7. SOURCE
8. DRAIN
DATE 16 FEB 2011
STYLE 4:
PIN 1. ANODE
2. ANODE
3. ANODE
4. ANODE
5. ANODE
6. ANODE
7. ANODE
8. COMMON CATHODE
STYLE 8:
PIN 1. COLLECTOR, DIE #1
2. BASE, #1
3. BASE, #2
4. COLLECTOR, #2
5. COLLECTOR, #2
6. EMITTER, #2
7. EMITTER, #1
8. COLLECTOR, #1
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
STYLE 20:
PIN 1. SOURCE (N)
2. GATE (N)
3. SOURCE (P)
4. GATE (P)
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 24:
PIN 1. BASE
2. EMITTER
3. COLLECTOR/ANODE
4. COLLECTOR/ANODE
5. CATHODE
6. CATHODE
7. COLLECTOR/ANODE
8. COLLECTOR/ANODE
STYLE 28:
PIN 1. SW_TO_GND
2. DASIC_OFF
3. DASIC_SW_DET
4. GND
5. V_MON
6. VBULK
7. VBULK
8. VIN
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
98ASB42564B
SOIC8 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
www.onsemi.com
Page 15
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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