TinyLogic HS 2-Input NAND
Gate
NC7S00
Description
The NC7S00 is a single 2−Input high performance CMOS NAND
Gate. Advanced Silicon Gate CMOS fabrication assures high speed
and low power circuit operation over a broad V
protection diodes inherently guard both inputs and output with respect
to the V
and GND rails. Three stages of gain between inputs and
CC
output assures high noise immunity and reduced sensitivity to input
edge rate.
Features
• Space Saving SC−74A and SC−88A 5−Lead Package
• Ultra Small MicroPak™ Leadless Package
• High Speed: t
• Low Quiescent Power: I
• Balanced Output Drive: 2 mA I
• Broad V
CC
= 3.5 ns Typ
PD
< 1 mA
CC
, −2 mA I
OL
Operating Range: 2 V – 6 V
OH
• Balanced Propagation Delays
• Specified for 3 V Operation
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
range. ESD
CC
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SIP6
CASE 127EB
Pin 1
SC−74A
CASE 318BQ
SC−88A
CASE 419A−02
MARKING
DIAGRAMS
A3KK
XYZ
7S00MG
G
S00MG
G
IEEE / IEC
A
B
Figure 1. Logic Symbol
&
Y
A3, 7S00, S00 = Specific Device Code
KK = 2−Digit Lot Run Traceability Code
XY = 2−Digit Date Code Format
Z = Assembly Plant Code
M = Date Code*
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2003
January, 2021 − Rev. 4
1 Publication Order Number:
NC7S00/D
Pin Configurations
NC7S00
A
1
B
2
GND Y
3
5
V
CC
4
Figure 2. SC−88A and SC−74A (Top
A 1 6 V
B 2 5 NC
GND 3 4 Y
Figure 3. MicroPak (Top Through View)
CC
View)
PIN DESCRIPTIONS
Pin Names Description
A, B Inputs
Y Output
NC No Connect
FUNCTION TABLE (Y = AB)
Inputs
A B Y
L L H
L H H
H L H
H H L
H = HIGH Logic Level
L = LOW Logic Level
Output
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Min Max Unit
V
CC
I
IK
V
IN
I
OK
V
OUT
I
OUT
ICC or I
T
STG
T
J
T
L
P
D
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Supply Voltage −0.5 6.5 V
DC Input Diode Current
DC Input Voltage −0.5 V
DC Output Diode Current
DC Output Voltage −0.5 V
VIN < 0 V − −20
VIN > V
CC
V
< 0 V − −20
OUT
V
> V
OUT
CC
− +20
CC
− +20
CC
+ 0.5 V
+ 0.5 V
DC Output Source or Sink Current − ±12.5 mA
DC VCC or Ground Current per Output Pin − ±25 mA
GND
Storage Temperature −65 +150 °C
Junction Temperature − +150 °C
Lead Temperature (Soldering, 10 Seconds) − +260 °C
Power Dissipation in Still Air
SC−74A − 390
SC−88A − 332
MicroPak−6 − 812
mA
mA
mW
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NC7S00
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Conditions Min Max Unit
V
CC
V
IN
V
OUT
T
tr, t
q
JA
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
1. Unused inputs must be held HIGH or LOW. They may not float.
DC ELECTICAL CHARACTERISTICS
Symbol Parameter V
V
IH
V
IL
V
OH
V
OL
I
IN
I
CC
Supply Voltage 2.0 6.0 V
Input Voltage 0 V
Output Voltage 0 V
Operating Temperature −40 +85 °C
A
Input Rise and Fall Times
f
VCC at 2.0 V 0 20
VCC at 3.0 V 0 20
VCC at 4.5 V 0 10
VCC at 6.0 V 0 5
Thermal Resistance
SC−74A − 320
SC−88A − 377
MicroPak−6 − 154
TA = +25°C TA = −40 to +85°C
Min Typ Max Min Max
− − 0.7 x V
CC
− 0.3 x V
CC
1.90 2.0 − 1.90 −
HIGH Level Input Voltage
LOW Level Input Voltage
HIGH Level Output Voltage
(V) Conditions
CC
2.0 1.50 − − 1.50 −
3.0 − 6.0 0.7 x V
2.0 − − 0.50 − 0.50
3.0 − 6.0 − − 0.3 x V
2.0 I
3.0 2.90 3.0 − 2.90 −
OH
V
IN
= –20 mA,
= VIH or V
IL
4.5 4.40 4.5 − 4.40 −
6.0 5.90 6.0 − 5.90 −
V
LOW Level Output Voltage
or V
= V
IN
IL
3.0
4.5 I
6.0 I
2.0 I
3.0 − 0.0 0.10 − 0.10
OL
V
IN
= 20 mA,
= VIH or V
I
IH
= –1.3 mA 2.68 2.85 − 2.63 −
OH
= –2 mA 4.18 4.35 − 4.13 −
OH
= –2.6 mA 5.68 5.85 − 5.63 −
OH
− 0.0 0.10 − 0.10
IL
4.5 − 0.0 0.10 − 0.10
6.0 − 0.0 0.10 −
V
3.0
4.5 I
6.0 I
Input Leakage Current 6.0 V
Quiescent Supply Current 6.0 V
= V
IN
or V
IL
= VCC, GND − − ±0.1 − ±1.0
IN
= VCC, GND − − 1.0 − 10.0
IN
I
IH
= 1.3 mA − 0.1 0.26 − 0.33
OH
= 2 mA − 0.1 0.26 − 0.33
OL
= 2.6 mA − 0.1 0.26 − 0.33
OL
CC
CC
CC
V
V
ns
°C/W
Unit
V
−
V
CC
V
V
0.10
mA
mA
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