ON Semiconductor NB3M8304C User Manual

NB3M8304C
f
3.3 V 200 MHz 1:4 LVCMOS/LVTTL Low Skew Fanout Buffer
The NB3M8304C is 1:4 fanout buffer with LVCMOS/LVTTL input and output. The device supports the core supply voltage of 3.3 V (V pin) and output supply voltage of 2.5 V or 3.3 V (V V
pin powers the four single ended LVCMOS/LVTTL outputs.
DDO
DDO
DD
pin). The
The NB3M8304C is Form, Fit and Function (pin to pin) compatible to ICS8304 and ICS8304I. The NB3M8304C is qualified for industrial operating temperature range.
Features
Input Clock Frequency up to 200 MHz
Low Output to Output Skew: 45 ps max
Low Part to Part Skew: 500 ps max
Low Additive RMS Phase Jitter
Input Clock Accepts LVCMOS/ LVTTL Levels
Operating Voltage:
Core Supply: VOutput Supply: V
= 3.3 V ±5%
DD
= 3.3 V ±5% or 2.5 V ±5%
DDO
Operating Temperature Range:
Industrial: −40°C to +85°C
These Devices are Pb−Free and are RoHS Compliant
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MARKING
DIAGRAMS*
8
1
SOIC−8 D SUFFIX CASE 751
A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 o this data sheet.
8
8304C
ALYWG
G
1
Figure 1. Block Diagram
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 3
1 Publication Order Number:
NB3M8304C/D
NB3M8304C
Figure 2. Pin Configuration (Top View)
Table 1. PIN DESCRIPTION
Pin Number Name Type Description
1 VDDO Output Power Clock output Supply pin. 2 VDD Input and Core Power Input and Core Supply pin. 3 CLK LVCMOS/LVTTL Input Clock Input. Internally pull−down. 4 GND Ground Supply Ground.
5, 6, 7, 8 Q[0:3] LVCMOS/LVTTL Output LVCMOS/LVTTL Clock output.
Table 2. MAXIMUM RATINGS
Symbol Parameter Condition Min Max Unit
V
DD, VDDO
V
T
stg
θ
JA
θ
JC
T
sol
MSL Moisture Sensitivity
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. JEDEC standard multilayer board – 2S2P (2 signal, 2 power)
2. For additional information, see Application Note AND8003/D.
Power Supply 4.6 V Input Voltage −0.5 VDD + 0.5 V
I
Storage Temperature −65 +150 °C Thermal Resistance (Junction−to−Ambient)
SOIC−8
0 lfpm
500 lfpm
Thermal Resistance (Junction to Case) (Note 1)
Wave Solder 3 sec 265 °C
SOIC−8
Indefinite Time Out of Drypack
(Note 2)
Level 1
80
°C/W
55
12−17 °C/W
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NB3M8304C
Table 3. DC OPERATING CHARACTERISTICS (V
Symbol
R
R C
C V
OUT
PD DD
I
IH
I
IL
Input Pull−down Resistor (CLK Pin) 51
IN
Input Capacitance 4 pF
IN
Output Impedance (Note 3) 5 7 12 Power Dissipation Capacitance (per output) VDD = V Core Supply Voltage 3.135 3.3 3.465 V Input High Current VIN = VDD = 3.465 V 150
Input Low Current VDD 3.465 V, VIN = 0.0 V −0.5
3. Outputs terminated with 50W to V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
Parameter Condition Min Typ Max Unit
/2. See Figure 4 for supply considerations.
DDO
= 3.3 V ±5%; TA = −40°C to +85°C)
DD
= 3.465 V 15 pF
DDO
kW
W
mA
mA
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. DC OPERATING CHARACTERISTICS (T
Symbol
VDD = 3.3 V +5%, V
V
DDO
V
OH
Output Supply Voltage 2.375 2.625 V Output HIGH Voltage
DDO
Parameter Condition Min Max Unit
= 2.5 V +5%
= −40°C to +85°C)
A
IOH = −100 mA
2.2 V
IOH = −16 mA 2.1
2.1
2.6
0.2 V
0.5
V
3
0.15
V
0.5
V
OL
VDD = V
V
DDO
V
OH
V
OL
Output LOW Voltage
50 W to V
IOL = 16 mA 0.25
DDO
/2
IOL = 100 mA
= 3.3 V +5%
DDO
50 W to V
DDO
/2
Output Supply Voltage 3.135 3.465 V Output HIGH Voltage
IOH = −16 mA 2.9
IOH = −100 mA
Output LOW Voltage
50 W to V
IOL = 16 mA 0.25
DDO
/2
IOL = 100 mA
50 W to V
DDO
/2
Table 5. DC OPERATING CHARACTERISTICS
= −40°C to +85°C; VDD = V
(T
A
Symbol
I
DD
I
DDO
V
V
Quiescent Power Supply Current No Load 15 mA Quiescent Power Supply Current No Load 8 mA Input HIGH Voltage 2 VDD + 0.3 V
IH
Input LOW Voltage −0.3 1.3 V
IL
= 3.3 V ±5%; VDD = 3.3 V ±5%, V
DDO
Parameter Condition Min Max Unit
= 2.5 V ±5%)
DDO
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