ON Semiconductor NB3M8302C User Manual

NB3M8302C

3.3 V 200 MHz 1:2 LVCMOS/LVTTL Low Skew Fanout Buffer

Description

The NB3M8302C is 1:2 fanout buffer with LVCMOS/LVTTL input and output. The device supports the core supply voltage of 3.3 V (V pin) and output supply voltage of 2.5 V or 3.3 V (V V

pin powers the two single ended LVCMOS/LVTTL outputs.

DDO

pin). The

The NB3M8302C is Form, Fit and Function (pin to pin) compatible to ICS8302 and ICS8302I. The NB3M8302C is qualified for industrial operating temperature range.

Features

• Input Clock Frequency up to 200 MHz

• Low Output to Output Skew: 25 ps typical

• Low Part to Part Skew: 250 ps typical

• Low Additive RMS Phase Jitter

• Input Clock Accepts LVCMOS/ LVTTL Levels

• Operating Voltage:

♦ Core Supply: V ♦ Output Supply: V

= 3.3 V ±5%

= 3.3 V ±5% or 2.5 V ±5%

DDO

• Operating Temperature Range:

♦ Industrial: −40°C to +85°C

• These Devices are Pb−Free and are RoHS Compliant

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MARKING

DIAGRAMS*

SOIC−8 D SUFFIX CASE 751

A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

8302C

ALYWG

Figure 1. Block Diagram

December, 2014 − Rev. 3

1 Publication Order Number:

NB3M8302C/D

NB3M8302C

Figure 2. Pin Configuration (Top View)

Table 1. PIN DESCRIPTION

Pin Number Name Type Description

1, 6 VDDO Output Power Clock output Supply pin.

2 VDD Input and Core Power Input and Core Supply pin. 3 CLK LVCMOS/LVTTL Input Clock Input. Internally pull−down.

4, 7 GND Ground Supply Ground.

5 Q1 LVCMOS/L VTTL Output LVCMOS/LVTTL Clock output. 8 Q0 LVCMOS/L VTTL Output LVCMOS/LVTTL Clock output.

Table 2. MAXIMUM RATINGS

Symbol Parameter Condition Min Max Unit

DD, VDDO

stg

sol

MSL Moisture Sensitivity

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. JEDEC standard multilayer board – 2S2P (2 signal, 2 power)

2. For additional information, see Application Note AND8003/D.

Power Supply − 4.6 V Input Voltage −0.5 VDD + 0.5 V V

Storage Temperature −65 +150 Thermal Resistance (Junction to Ambient)

SOIC−8

0 lfpm

500 lfpm

Thermal Resistance (Junction to Case) (Note 1)

Wave Solder 3 sec 265

Indefinite Time Out of Drypack

SOIC−8

(Note 2) Level 1

80 55

12−17

_C/W

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NB3M8302C

Table 3. DC OPERATING CHARACTERISTICS

= V

Symbol

R C

OUT

I I

3. Outputs terminated with 50 W to V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

= 3.3 V±5%, VDD = 3.3 V±5%, V

DDO

Input Pull−down Resistor (CLK Pin) 51

Input Capacitance 4 pF

Output Impedance (Note 3) 5 7 12

Power Dissipation Capacitance (per output)

Core Supply Voltage 3.135 3.3 3.465 V Input High Current VIN = VDD = 3.465 V 150 Input Low Current VDD 3.465 V, VIN = 0.0 V −0.5

Parameter Condition Min Typ Max Unit

/2. See Figure 4 for supply considerations.

DDO

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

= 2.5 V±5%; TA = −40°C to +85°C)

DDO

VDD = V

VDD = 3.465 V, V

= 3.465 V 22

DDO

= 2.625 V 16

DDO

mA mA

Table 4. DC OPERATING CHARACTERISTICS (T

Symbol

VDD = 3.3 V+5%, V

DDO

VDD = V

DDO

Output Supply Voltage 2.375 2.625 V Output HIGH Voltage

Output LOW Voltage

= 3.3 V+5%

DDO

Output Supply Voltage 3.135 3.465 V Output HIGH Voltage

Output LOW Voltage

DDO

Parameter Condition Min Max Unit

= 2.5 V+5%

= −40°C to +85°C)

IOH = −16 mA 2.1

IOH = −100 mA

50 W to V

IOL = 100 mA

50 W to V

IOH = −16 mA 2.9

IOH = −100 mA

50 W to V

IOL = 100 mA

50 W to V

2.2

DDO

1.8

IOL = 16 mA 0.15

0.2

DDO

0.5

2.9

DDO

2.6

IOL = 16 mA 0.15

0.2

DDO

0.5

Table 5. DC OPERATING CHARACTERISTICS (T

V±5%)

Symbol

DDO

Quiescent Power Supply Current No Load 13 mA Quiescent Power Supply Current No Load 4 mA Input HIGH Voltage 2 VDD + 0.3 V Input LOW Voltage −0.3 1.3 V

Parameter Condition Min Max Unit

= −40°C to +85°C; VDD = V

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= 3.3 V±5%, VDD = 3.3 V±5%, V

DDO

= 2.5

NB3M8302C

Table 6. AC CHARACTERISTICS (Note 4)

Symbol

TA = −405C to +855C; VDD = V

PLH

SKEW

Input Frequency 200 MHz

Propagation Delay (Note 5) Fin = 200 MHz 1.9 3.1 ns Output to Output Skew(Note 6) 25 85 Part to Part Skew (Note 6) 250 800

SKEWDC

Output Duty Cycle (see Figure 3)

tr/tf Output rise and fall times (Note 7)

TA = −405C to +855C; VDD = 3.3 V+5%, V

PLH

SKEW

Input Frequency 200 MHz

Propagation Delay (Note 5) Fin = 200 MHz 2.0 3.3 ns Output to Output Skew(Note 6) 25 85 Part to Part Skew (Note 6) 250 800

SKEWDC

Output Duty Cycle (see Figure 3)

tr/tf Output rise and fall times (Note 7)

4. Clock input with 50% duty cycle. Outputs terminated with 50 W to V

5. Measured from V

6. Similar input conditions and the same supply voltages. Measured at V

/2 of the input to V

7. RS is Series Resistance at the clock outputs. NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously.

Parameter Condition Min Typ Max Unit

= 3.3 V+5%

DDO

Fin v 133 MHz 45 55

133 MHz < Fin < 200 MHz 40 60

250 800 ps

= 2.5 V+5%

DDO

20% to 80%, RS = 33 W

Fin v 133 MHz 45 55

133 MHz < Fin < 200 MHz 40 60

200 650 ps

/2 of the output.

DDO

20% to 80%, RS = 33 W

/2. See Figures 3 and 4.

DDO

/2. See Figures 3 and 4.

DDO

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NB3M8302C

Figure 3. AC Reference Measurement

DDO

ZO = 50 W

NB3M8302C Receiver /

Qx D

Scope

50 W

DUT

GND

Spec Condition: TEST SETUP VDD: TEST SETUP V

VDD = V

= 3.3 V ±5% 1.65 V ±5% 1.65 V ±5% −1.65 V ±5%

DDO

VDD = 3.3 V ±5%;

= 2.5 V ±5%

DDO

2.05 V ±5% 1.25 V ±5% −1.25 V ±5%

: TEST SETUP DUT GND:

DDO

Figure 4. Output Driver Typical Device Evaluation and Termination Setup

ORDERING INFORMATION

Device Package Shipping

NB3M8302CDG SOIC−8

98 Units / Rail

(Pb−Free)

NB3M8302CDR2G SOIC−8

2500 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 1:1

−Y−

−Z−

−X−

0.25 (0.010) Z

SOLDERING FOOTPRINT*

7.0

0.275

0.25 (0.010)

SEATING PLANE

SXS

0.060

0.10 (0.004)

1.52

4.0

0.155

CASE 751−07

SOIC−8 NB

ISSUE AK

X 45

MARKING DIAGRAM*

XXXXX ALYWX

XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package

XXXXX ALYWX

(Pb−Free)

DATE 16 FEB 2011

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8

____

N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244

INCHES

GENERIC

XXXXXX

AYWW

Discrete

XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

XXXXXX

AYWW

Discrete

(Pb−Free)

0.6

0.024

1.270

0.050

SCALE 6:1

inches

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

STYLES ON PAGE 2

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98ASB42564B

SOIC−8 NB

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. COLLECTOR

4. EMITTER

5. EMITTER

6. BASE

7. BASE

8. EMITTER

STYLE 5:

PIN 1. DRAIN

2. DRAIN

3. DRAIN

4. DRAIN

5. GATE

6. GATE

7. SOURCE

8. SOURCE

STYLE 9:

PIN 1. EMITTER, COMMON

2. COLLECTOR, DIE #1

3. COLLECTOR, DIE #2

4. EMITTER, COMMON

5. EMITTER, COMMON

6. BASE, DIE #2

7. BASE, DIE #1

8. EMITTER, COMMON

STYLE 13:

PIN 1. N.C.

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

STYLE 17:

PIN 1. VCC

2. V2OUT

3. V1OUT

4. TXE

5. RXE

6. VEE

7. GND

8. ACC

STYLE 21:

PIN 1. CATHODE 1

2. CATHODE 2

3. CATHODE 3

4. CATHODE 4

5. CATHODE 5

6. COMMON ANODE

7. COMMON ANODE

8. CATHODE 6

STYLE 25:

PIN 1. VIN

2. N/C

3. REXT

4. GND

5. IOUT

6. IOUT

7. IOUT

8. IOUT

STYLE 29:

PIN 1. BASE, DIE #1

2. EMITTER, #1

3. BASE, #2

4. EMITTER, #2

5. COLLECTOR, #2

6. COLLECTOR, #2

7. COLLECTOR, #1

8. COLLECTOR, #1

STYLE 2:

PIN 1. COLLECTOR, DIE, #1

2. COLLECTOR, #1

3. COLLECTOR, #2

4. COLLECTOR, #2

5. BASE, #2

6. EMITTER, #2

7. BASE, #1

8. EMITTER, #1

STYLE 6:

PIN 1. SOURCE

2. DRAIN

3. DRAIN

4. SOURCE

5. SOURCE

6. GATE

7. GATE

8. SOURCE

STYLE 10:

PIN 1. GROUND

2. BIAS 1

3. OUTPUT

4. GROUND

5. GROUND

6. BIAS 2

7. INPUT

8. GROUND

STYLE 14:

PIN 1. N−SOURCE

2. N−GATE

3. P−SOURCE

4. P−GATE

5. P−DRAIN

6. P−DRAIN

7. N−DRAIN

8. N−DRAIN

STYLE 18:

PIN 1. ANODE

2. ANODE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. CATHODE

8. CATHODE

STYLE 22:

PIN 1. I/O LINE 1

2. COMMON CATHODE/VCC

3. COMMON CATHODE/VCC

4. I/O LINE 3

5. COMMON ANODE/GND

6. I/O LINE 4

7. I/O LINE 5

8. COMMON ANODE/GND

STYLE 26:

PIN 1. GND

2. dv/dt

3. ENABLE

4. ILIMIT

5. SOURCE

6. SOURCE

7. SOURCE

8. VCC

STYLE 30:

PIN 1. DRAIN 1

2. DRAIN 1

3. GATE 2

4. SOURCE 2

5. SOURCE 1/DRAIN 2

6. SOURCE 1/DRAIN 2

7. SOURCE 1/DRAIN 2

8. GATE 1

SOIC−8 NB

CASE 751−07

ISSUE AK

STYLE 3:

STYLE 7:

STYLE 11:

STYLE 15:

STYLE 19:

STYLE 23:

PIN 1. DRAIN, DIE #1

2. DRAIN, #1

3. DRAIN, #2

4. DRAIN, #2

5. GATE, #2

6. SOURCE, #2

7. GATE, #1

8. SOURCE, #1

PIN 1. INPUT

2. EXTERNAL BYPASS

3. THIRD STAGE SOURCE

4. GROUND

5. DRAIN

6. GATE 3

7. SECOND STAGE Vd

8. FIRST STAGE Vd

PIN 1. SOURCE 1

2. GATE 1

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. DRAIN 2

7. DRAIN 1

8. DRAIN 1

PIN 1. ANODE 1

2. ANODE 1

3. ANODE 1

4. ANODE 1

5. CATHODE, COMMON

6. CATHODE, COMMON

7. CATHODE, COMMON

8. CATHODE, COMMON

PIN 1. SOURCE 1

2. GATE 1

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. MIRROR 2

7. DRAIN 1

8. MIRROR 1

PIN 1. LINE 1 IN

2. COMMON ANODE/GND

3. COMMON ANODE/GND

4. LINE 2 IN

5. LINE 2 OUT

6. COMMON ANODE/GND

7. COMMON ANODE/GND

8. LINE 1 OUT

STYLE 27:

PIN 1. ILIMIT

2. OVLO

3. UVLO

4. INPUT+

5. SOURCE

6. SOURCE

7. SOURCE

8. DRAIN

DATE 16 FEB 2011

STYLE 4:

PIN 1. ANODE

2. ANODE

3. ANODE

4. ANODE

5. ANODE

6. ANODE

7. ANODE

8. COMMON CATHODE

STYLE 8:

PIN 1. COLLECTOR, DIE #1

2. BASE, #1

3. BASE, #2

4. COLLECTOR, #2

5. COLLECTOR, #2

6. EMITTER, #2

7. EMITTER, #1

8. COLLECTOR, #1

STYLE 12:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

STYLE 16:

PIN 1. EMITTER, DIE #1

2. BASE, DIE #1

3. EMITTER, DIE #2

4. BASE, DIE #2

5. COLLECTOR, DIE #2

6. COLLECTOR, DIE #2

7. COLLECTOR, DIE #1

8. COLLECTOR, DIE #1

STYLE 20:

PIN 1. SOURCE (N)

2. GATE (N)

3. SOURCE (P)

4. GATE (P)

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

STYLE 24:

PIN 1. BASE

2. EMITTER

3. COLLECTOR/ANODE

4. COLLECTOR/ANODE

5. CATHODE

6. CATHODE

7. COLLECTOR/ANODE

8. COLLECTOR/ANODE

STYLE 28:

PIN 1. SW_TO_GND

2. DASIC_OFF

3. DASIC_SW_DET

4. GND

5. V_MON

6. VBULK

7. VBULK

8. VIN

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98ASB42564B

SOIC−8 NB

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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ON Semiconductor NB3M8302C User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual