ON Semiconductor NB3M8302C User Manual

NB3M8302C

3.3 V 200 MHz 1:2
LVCMOS/LVTTL Low Skew
Fanout Buffer

Description

The NB3M8302C is 1:2 fanout buffer with LVCMOS/LVTTL input
and output. The device supports the core supply voltage of 3.3 V (V
pin) and output supply voltage of 2.5 V or 3.3 V (V
V

pin powers the two single ended LVCMOS/LVTTL outputs.

DDO

DDO

pin). The

DD

The NB3M8302C is Form, Fit and Function (pin to pin) compatible
to ICS8302 and ICS8302I. The NB3M8302C is qualified for industrial
operating temperature range.

Features

• Input Clock Frequency up to 200 MHz

• Low Output to Output Skew: 25 ps typical

• Low Part to Part Skew: 250 ps typical

• Low Additive RMS Phase Jitter

• Input Clock Accepts LVCMOS/ LVTTL Levels

• Operating Voltage:

♦ Core Supply: V
♦ Output Supply: V

= 3.3 V ±5%

DD

= 3.3 V ±5% or 2.5 V ±5%

DDO

• Operating Temperature Range:

♦ Industrial: −40°C to +85°C

• These Devices are Pb−Free and are RoHS Compliant

www.onsemi.com

MARKING

DIAGRAMS*

8

1

SOIC−8
D SUFFIX
CASE 751

A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

8

8302C

ALYWG

G

1

Figure 1. Block Diagram

© Semiconductor Components Industries, LLC, 2014

December, 2014 − Rev. 3

1 Publication Order Number:

NB3M8302C/D

NB3M8302C

Figure 2. Pin Configuration (Top View)

Table 1. PIN DESCRIPTION

Pin Number Name Type Description

1, 6 VDDO Output Power Clock output Supply pin.

2 VDD Input and Core Power Input and Core Supply pin.
3 CLK LVCMOS/LVTTL Input Clock Input. Internally pull−down.

4, 7 GND Ground Supply Ground.

5 Q1 LVCMOS/L VTTL Output LVCMOS/LVTTL Clock output.
8 Q0 LVCMOS/L VTTL Output LVCMOS/LVTTL Clock output.

Table 2. MAXIMUM RATINGS

Symbol Parameter Condition Min Max Unit

V

DD, VDDO

V

T

stg

q

JA

q

JC

T

sol

MSL Moisture Sensitivity

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

1. JEDEC standard multilayer board – 2S2P (2 signal, 2 power)

2. For additional information, see Application Note AND8003/D.

Power Supply − 4.6 V
Input Voltage −0.5 VDD + 0.5 V V

I

Storage Temperature −65 +150
Thermal Resistance (Junction to Ambient)

SOIC−8

0 lfpm

500 lfpm

Thermal Resistance (Junction to Case)
(Note 1)

Wave Solder 3 sec 265

Indefinite Time Out of Drypack

SOIC−8

(Note 2) Level 1

80
55

12−17

_C

_C/W

_C/W

_C

www.onsemi.com

2

NB3M8302C

Table 3. DC OPERATING CHARACTERISTICS

= V

(V

DD

Symbol

R
C

R

OUT

C

V

I
I

3. Outputs terminated with 50 W to V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

= 3.3 V±5%, VDD = 3.3 V±5%, V

DDO

Input Pull−down Resistor (CLK Pin) 51

IN

Input Capacitance 4 pF

IN

Output Impedance (Note 3) 5 7 12

PD

DD

IH

IL

Power Dissipation Capacitance (per output)

Core Supply Voltage 3.135 3.3 3.465 V
Input High Current VIN = VDD = 3.465 V 150
Input Low Current VDD 3.465 V, VIN = 0.0 V −0.5

Parameter Condition Min Typ Max Unit

/2. See Figure 4 for supply considerations.

DDO

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

= 2.5 V±5%; TA = −40°C to +85°C)

DDO

VDD = V

VDD = 3.465 V, V

= 3.465 V 22

DDO

= 2.625 V 16

DDO

kW

W

pF

mA
mA

Table 4. DC OPERATING CHARACTERISTICS (T

Symbol

VDD = 3.3 V+5%, V

V

DDO

V

OH

V

OL

VDD = V

V

DDO

V

OH

V

OL

Output Supply Voltage 2.375 2.625 V
Output HIGH Voltage

Output LOW Voltage

= 3.3 V+5%

DDO

Output Supply Voltage 3.135 3.465 V
Output HIGH Voltage

Output LOW Voltage

DDO

Parameter Condition Min Max Unit

= 2.5 V+5%

= −40°C to +85°C)

A

IOH = −16 mA 2.1

IOH = −100 mA

50 W to V

IOL = 100 mA

50 W to V

IOH = −16 mA 2.9

IOH = −100 mA

50 W to V

IOL = 100 mA

50 W to V

2.2

DDO

/2

1.8

IOL = 16 mA 0.15

0.2

DDO

/2

0.5

2.9

DDO

/2

2.6

IOL = 16 mA 0.15

0.2

DDO

/2

0.5

V

V

V

V

Table 5. DC OPERATING CHARACTERISTICS (T

V±5%)

Symbol

I

DD

I

DDO

V

IH

V

IL

Quiescent Power Supply Current No Load 13 mA
Quiescent Power Supply Current No Load 4 mA
Input HIGH Voltage 2 VDD + 0.3 V
Input LOW Voltage −0.3 1.3 V

Parameter Condition Min Max Unit

= −40°C to +85°C; VDD = V

A

www.onsemi.com

3

= 3.3 V±5%, VDD = 3.3 V±5%, V

DDO

DDO

= 2.5