ON Semiconductor N25S818HA User Manual

N25S818HA

256 kb Low Power Serial SRAMs

32 k x 8 Bit Organization

Introduction

The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 kb serially accessed Static Random Access Memory, internally organized as 32 k words by 8 bits. The devices are designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high−speed performance and low power. The devices operate with a single chip select (CS Interface (SPI) serial bus. A single data in and data out line is used along with a clock to access data within the devices. The N25S818HA devices include a HOLD to be paused. While paused, input transitions will be ignored. The devices can operate over a wide temperature range of −40°C to +85°C and can be available in several standard package offerings.

Features

• Power Supply Range: 1.7 to 1.95 V

• Very Low Standby Current: Typical Isb as low as 200 nA

• Very Low Operating Current: As low as 3 mA

• Simple Memory Control:

Single chip select (CS Serial input (SI) and serial output (SO)

• Flexible Operating Modes:

Word read and write Page mode (32 word page) Burst mode (full array)

• Organization: 32 k x 8 bit

• Self Timed Write Cycles

• Built−in Write Protection (CS High)

• HOLD Pin for Pausing Communication

• High Reliability: Unlimited write cycles

• Green SOIC and TSSOP

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

) input and use a simple Serial Peripheral

pin that allows communication to the device

)

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MARKING

DIAGRAMS

C124

TSSOP−8 T SUFFIX

CASE 948AL

SOIC−8

S SUFFIX

CASE 751BD

XXXX = Date Code Y = Assembly Code ZZ = Lot Traceability

ORDERING INFORMATION

Device Package

N25S818HAS21I SOIC−8

(Pb−Free)

N25S818HAT21I TSSOP−8

(Pb−Free)

N25S818HAS21IT SOIC−8

(Pb−Free)

N25S818HAT21IT TSSOP−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

XXXXYZZ

C114 XXXXYZZ

Shipping

100 Units / Tube

3000 / Tape &

Reel

3000 / Tape &

Reel

†

June, 2012 − Rev. 12

1 Publication Order Number:

N25S818HA/D

N25S818HA

1

CS SO NC

VSS

TSSOP−8

VCC HOLD

SCK SI

Figure 1. Pin Connections

(Top View)

Table 1. DEVICE OPTIONS

Power

Part Number Density

N25S818HAS2

N25S818HAT2 TSSOP

256 Kb 1.8 16

Supply (V)

Speed

(MHz)

Package

SOIC

Table 2. PIN NAMES

Pin Name Pin Function

CS Chip Select Input

SCK Serial Clock Input

SI Serial Data Input

SO Serial Data Output

HOLD Hold Input

NC No Connect

V

CC

V

SS

Power

Ground

CS

SO

NC

VSS

1

VCC

HOLD

SCK

SI

SOIC−8

Typical Standby

Current

200 nA 3 mA @ 1 Mhz

Read/Write

Operating Current

SCK

HOLD

CS

SO

Clock

Circuitry

Decode

Logic

SI

Data In

Receiver

Data Out

Buffer

SRAM

Array

Figure 2. Functional Block Diagram

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N25S818HA

Table 3. ABSOLUTE MAXIMUM RATINGS

Item Symbol Rating Unit

Voltage on any pin relative to V

Voltage on VCC Supply Relative to V

SS

Power Dissipation P

Storage Temperature T

Operating Temperature T

Soldering Temperature and Time T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Table 4. OPERATING CHARACTERISTICS (Over Specified Temperature Range)

Item Symbol Test Conditions Min

Supply Voltage V

Input High Voltage V

Input Low Voltage V

Output High Voltage V

Output Low Voltage V

Input Leakage Current I

Output Leakage Current I

Read/Write Operating Current

Standby Current I

I

CC

IH

IL

OH

OL

LI

LO

CC1

CC2

CC3

SB

1. Typical values are measured at Vcc = Vcc Typ., TA = 25°C and are not 100% tested.

1.8 V Device 1.7 1.95 V

IOH = −0.4 mA VCC – 0.5 V

IOL = 1 mA 0.2 V

CS = VCC, VIN = 0 to V

CS = VCC, V

F = 1 MHz, I

F = 10 MHz, I

F = fCLK MAX, I

CS = VCC, VIN = VSS or V

V

IN,OUT

V

CC

D

STG

A

SOLDER

–0.3 to VCC + 0.3 V

–0.3 to 4.5 V

500 mW

–40 to 125 °C

−40 to +85 °C

260°C, 10 sec °C

Typ

(Note 1)

0.7 x V

CC

VCC + 0.3 V

−0.3 0.8 V

CC

= 0 to V

OUT

CC

= 0 3 mA

= 0 6 mA

OUT

= 0 10 mA

OUT

CC

200 500 nA

Max Unit

0.5

mA

Table 5. CAPACITANCE (Note 2)

Item

Input Capacitance C

I/O Capacitance C

2. These parameters are verified in device characterization and are not 100% tested

Symbol Test Condition Min Max Unit

IN

I/O

VIN = 0 V, f = 1 MHz, TA = 25°C 7 pF

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3

N25S818HA

Table 6. TIMING TEST CONDITIONS

Item

Input Pulse Level 0.1 VCC to 0.9 V

Input Rise and Fall Time 5 ns

Input and Output Timing Reference Levels 0.5 V

Output Load CL = 100 pF

Operating Temperature −40 to +85°C

Table 7. TIMING

Item Symbol Min Max Units

Clock Frequency f

Clock Rise Time t

Clock Fall Time t

Clock High Time t

Clock Low Time t

Clock Delay Time t

CS Setup Time t

CS Hold Time t

CS Disable Time t

SCK to CS t

Data Setup Time t

Data Hold Time t

Output Valid From Clock Low t

Output Hold Time t

Output Disable Time t

HOLD Setup Time t

HOLD Hold Time t

HOLD Low to Output High−Z t

HOLD High to Output Valid t

CLK

R

F

HI

LO

CLD

CSS

CSH

CSD

SCS

SU

HD

V

HO

DIS

HS

HH

HZ

HV

CC

32 ns

50 ns

32 ns

5 ns

10 ns

0 ns

10 ns

CC

16 MHz

2

32 ns

20 ns

50 ns

ms

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4

N25S818HA

t

CSD

CS

SCK

SO

CS

SCK

SO

t

CLD

t

R

t

CSS

t

SU

SI

MSB in

t

HD

t

F

t

CSH

t

SCS

LSB in

High−Z

Figure 3. Serial Input Timing

t

V

MSB out

LOtHI

t

CSH

LSB out

t

DIS

SI

CS

SCK

SO n+1 n

SI

n+2

t

HZ

n+2 n+1 n

HOLD

Don’t Care

Figure 4. Serial Output Timing

t

HS

t

HH

High−Z

Don’t Care

Figure 5. Hold Timing

t

HH

t

HS

t

HV

nn−1

t

SU

nn−1

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