ON Semiconductor MUR180E, MUR1100E Technical data

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MUR180E, MUR1100E
MUR1100E is a Preferred Device
SWITCHMODE
Power Rectifiers
. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:
10 mjoules Avalanche Energy Guaranteed
Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 Volts
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ULTRAFAST RECTIFIERS
1.0 AMPERES
800–1000 VOLTS
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16 from case
Shipped in plastic bags, 1000 per bag
Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to
the part number
Polarity: Cathode Indicated by Polarity Band
Marking: MUR180E, MUR1100E
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage DC Blocking Voltage MUR180E
MUR1100E
Average Rectified Forward Current
(Note 1.) (Square Wave Mounting Method #3 Per Note 3.)
Non-Repetitive Peak Surge Current (Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
Operating Junction Temperature and
Storage Temperature Range
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
V
RRM
V
RWM
V
I
F(AV)
I
FSM
TJ, T
V
R
stg
800
1000
1.0 @
T
= 95°C
A
35 A
–65 to
+175
A
°C
AXIAL LEAD
CASE 059–10
PLASTIC
MARKING DIAGRAM
MUR1x0E
MUR1x0E = Device Code x = 8 or 10
ORDERING INFORMATION
Device Package Shipping
MUR180E Axial Lead 1000 Units/Bag MUR180ERL Axial Lead 5000/Tape & Reel MUR1100E Axial Lead 1000 Units/Bag MUR1100ERL Axial Lead 5000/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2002
August, 2002 – Rev. 1
1 Publication Order Number:
MUR180E/D
MUR180E, MUR1100E
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Maximum Thermal Resistance, Junction to Ambient R
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2.)
= 1.0 Amp, TJ = 150°C)
(i
F
(i
= 1.0 Amp, TJ = 25°C)
F
Maximum Instantaneous Reverse Current (Note 2.)
(Rated dc Voltage, T (Rated dc Voltage, T
Maximum Reverse Recovery Time
(I
= 1.0 Amp, di/dt = 50 Amp/s)
F
= 0.5 Amp, iR = 1.0 Amp, I
(I
F
Maximum Forward Recovery Time
(I
= 1.0 Amp, di/dt = 100 Amp/s, Recovery to 1.0 V)
F
Controlled Avalanche Energy (See Test Circuit in Figure 6) W
2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
= 100°C)
J
= 25°C)
J
= 0.25 Amp)
REC
JA
v
F
i
R
t
rr
t
fr
AVAL
See Note 3. °C/W
Volts
1.50
1.75 A
600
10
ns
100
75 75 ns
10 mJ
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2
MUR180E, MUR1100E
ELECTRICAL CHARACTERISTICS
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
i
0.1
0.07
0.05
T
J
= 175°C
100°C
25°C
1000
T
= 175°C
100
10
J
100°C
1.0
, REVERSE CURRENT ( A)
R
I
0.1
25°C
0.01 0 300200 500 600
100 400 1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V
5.0
4.0
3.0
is sufficiently below rated VR.
R
R
RATED V
= 50°C/W
JA
800 900700
R
0.03
0.02
0.01
0.3 0.90.5 1.3
0.7
v
INSTANTANEOUS VOLTAGE (VOLTS)
F,
Figure 1. Typical Forward Voltage
5.0
(CAPACITIVELOAD)
4.0
3.0
T
= 175°C
J
2.0
1.0
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
0
P
0
0.5 1.0 1.5 2.0 2.5
I
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
Figure 4. Power Dissipation
1.1 1.5 1.9
I
PK
20
I
AV
1.7 2.1
SQUARE WAVE
2.0
SQUARE WAVE
1.0
dc
, AVERAGE FORWARD CURRENT (AMPS)
2.3 0
F(AV)
I
050
150100 200
, AMBIENT TEMPERATURE (°C)
T
A
250
Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
5.010
dc
20
10
7.0
5.0
C, CAPACITANCE (pF)
3.0
2.0 0
10 20
V
, REVERSE VOLTAGE (VOLTS)
R
T
= 25°C
J
30 40 50
Figure 5. T ypical Capacitance
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MERCURY
SWITCH
S
MUR180E, MUR1100E
+V
DD
I
40 mH COIL
L
BV
V
D
I
D
I
DUT
1
t
0
L
DUT
I
D
V
DD
t
1
t
t
2
Figure 6. Test Circuit
The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened.
When S
is closed at t0 the current in the inductor IL ramps
1
up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BV
and the diode begins to conduct the full load current
DUT
which now starts to decay linearly through the diode, and goes to zero at t
.
2
By solving the loop equation at the point in time when S is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the V
power supply while the diode is in
DD
breakdown (from t1 to t2) minus any losses due to finite
EQUATION (1):
W
AVAL
1
LI
2
2 LPK
BV
BV
DUT
DUT–VDD
CH1 CH2
Figure 7. Current–Voltage Waveforms
component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the V
voltage is low compared to the
DD
breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2).
The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules.
1
Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments.
50mV
A20s 953 V VERT500V
CHANNEL 2: I
0.5 AMPS/DIV.
L
EQUATION (2):
W
AVAL
1
LI
2
2 LPK
ACQUISITIONS
1 217:33 HRS
SAVEREF SOURCE
CH1 CH2 REF REF
Figure 8. Current–Voltage Waveforms
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STACK
CHANNEL 1: V
DUT
500 VOLTS/DIV.
TIME BASE 20 s/DIV.
:
MUR180E, MUR1100E
NOTE 3. — AMBIENT MOUNTING DATA
Data shown for thermal resistance junction to ambient (R used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured.
) for the mountings shown is to be
JA
TYPICAL VALUES FOR R
Mounting
Method 1 2 3
R
JA
MOUNTING METHOD 1
L L
MOUNTING METHOD 2
L L
Lead Length, L
1/8
52 67
IN STILL AIR
JA
1/4 1/2 Units
65 72 80 87
50
°C/W °C/W °C/W
Vector Pin Mounting
MOUNTING METHOD 3
L = 3/8
Board Ground Plane
P.C. Board with
1–1/2 X 1–1/2 Copper Surface
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MUR180E, MUR1100E
PACKAGE DIMENSIONS
MINI MOSORB
CASE 59–10
ISSUE S
B
K
D
F
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 59-04 OBSOLETE, NEW STANDARD 59-09.
4. 59-03 OBSOLETE, NEW STANDARD 59-10.
5. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION.
DIM MIN MAX MIN MAX
A 4.10 5.200.161 0.205 B 2.00 2.700.079 0.106 D 0.71 0.860.028 0.034 F --- 1.27--- 0.050 K 25.40 ---1.000 ---
MILLIMETERSINCHES
K
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Notes
MUR180E, MUR1100E
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MUR180E, MUR1100E
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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MUR180E/D
8
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