ON Semiconductor MUR180E, MUR1100E Technical data

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MUR180E, MUR1100E

MUR1100E is a Preferred Device

SWITCHMODE

Power Rectifiers

Ultrafast “E” Series with High Reverse
Energy Capability

. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:

• 10 mjoules Avalanche Energy Guaranteed

• Excellent Protection Against Voltage Transients in Switching

Inductive Load Circuits

• Ultrafast 75 Nanosecond Recovery Time

• 175°C Operating Junction Temperature

• Low Forward Voltage

• Low Leakage Current

• High Temperature Glass Passivated Junction

• Reverse Voltage to 1000 Volts

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ULTRAFAST
RECTIFIERS

1.0 AMPERES

800–1000 VOLTS

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

220°C Max. for 10 Seconds, 1/16″ from case

• Shipped in plastic bags, 1000 per bag

• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to

the part number

• Polarity: Cathode Indicated by Polarity Band

• Marking: MUR180E, MUR1100E

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage
DC Blocking Voltage MUR180E

MUR1100E

Average Rectified Forward Current

(Note 1.) (Square Wave Mounting
Method #3 Per Note 3.)

Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,

halfwave, single phase, 60 Hz)

Operating Junction Temperature and

Storage Temperature Range

1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤2.0%.

V

RRM

V

RWM

V

I

F(AV)

I

FSM

TJ, T

V

R

stg

800

1000

1.0 @

T

= 95°C

A

35 A

–65 to

+175

A

°C

AXIAL LEAD

CASE 059–10

PLASTIC

MARKING DIAGRAM

MUR1x0E

MUR1x0E = Device Code
x = 8 or 10

ORDERING INFORMATION

Device Package Shipping

MUR180E Axial Lead 1000 Units/Bag
MUR180ERL Axial Lead 5000/Tape & Reel
MUR1100E Axial Lead 1000 Units/Bag
MUR1100ERL Axial Lead 5000/Tape & Reel

Preferred devices are recommended choices for future use
and best overall value.

 Semiconductor Components Industries, LLC, 2002

August, 2002 – Rev. 1

1 Publication Order Number:

MUR180E/D

MUR180E, MUR1100E

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Maximum Thermal Resistance, Junction to Ambient R

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 2.)

= 1.0 Amp, TJ = 150°C)

(i

F

(i

= 1.0 Amp, TJ = 25°C)

F

Maximum Instantaneous Reverse Current (Note 2.)

(Rated dc Voltage, T
(Rated dc Voltage, T

Maximum Reverse Recovery Time

(I

= 1.0 Amp, di/dt = 50 Amp/s)

F

= 0.5 Amp, iR = 1.0 Amp, I

(I

F

Maximum Forward Recovery Time

(I

= 1.0 Amp, di/dt = 100 Amp/s, Recovery to 1.0 V)

F

Controlled Avalanche Energy (See Test Circuit in Figure 6) W

2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤2.0%.

= 100°C)

J

= 25°C)

J

= 0.25 Amp)

REC



JA

v

F

i

R

t

rr

t

fr

AVAL

See Note 3. °C/W

Volts

1.50

1.75
A

600

10

ns

100

75
75 ns

10 mJ

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2

MUR180E, MUR1100E

ELECTRICAL CHARACTERISTICS

20

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

, INSTANTANEOUS FORWARD CURRENT (AMPS)

F

i

0.1

0.07

0.05

T

J

= 175°C

100°C

25°C

1000

T

= 175°C

100



10

J

100°C

1.0

, REVERSE CURRENT ( A)

R

I

0.1

25°C

0.01
0 300200 500 600

100 400 1000

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Typical Reverse Current*

* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V

5.0

4.0

3.0

is sufficiently below rated VR.

R

R

RATED V

= 50°C/W



JA

800 900700

R

0.03

0.02

0.01

0.3 0.90.5 1.3

0.7

v

INSTANTANEOUS VOLTAGE (VOLTS)

F,

Figure 1. Typical Forward Voltage

5.0

(CAPACITIVELOAD)

4.0

3.0

T

= 175°C

J

2.0

1.0

, AVERAGE POWER DISSIPATION (WATTS)

F(AV)

0

P

0

0.5 1.0 1.5 2.0 2.5

I

, AVERAGE FORWARD CURRENT (AMPS)

F(AV)

Figure 4. Power Dissipation

1.1 1.5 1.9

I

PK

 20

I

AV

1.7 2.1

SQUARE WAVE

2.0

SQUARE WAVE

1.0

dc

, AVERAGE FORWARD CURRENT (AMPS)

2.3
0

F(AV)

I

050

150100 200

, AMBIENT TEMPERATURE (°C)

T

A

250

Figure 3. Current Derating

(Mounting Method #3 Per Note 1)

5.010

dc

20

10

7.0

5.0

C, CAPACITANCE (pF)

3.0

2.0
0

10 20

V

, REVERSE VOLTAGE (VOLTS)

R

T

= 25°C

J

30 40 50

Figure 5. T ypical Capacitance

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3

MERCURY

SWITCH

S

MUR180E, MUR1100E

+V

DD

I

40 mH COIL

L

BV

V

D

I

D

I

DUT

1

t

0

L

DUT

I

D

V

DD

t

1

t

t

2

Figure 6. Test Circuit

The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.

When S

is closed at t0 the current in the inductor IL ramps

1

up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV

and the diode begins to conduct the full load current

DUT

which now starts to decay linearly through the diode, and
goes to zero at t

.

2

By solving the loop equation at the point in time when S
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V

power supply while the diode is in

DD

breakdown (from t1 to t2) minus any losses due to finite

EQUATION (1):

W

AVAL



1

LI

2

2
LPK



BV

BV

DUT

DUT–VDD



CH1
CH2

Figure 7. Current–Voltage Waveforms

component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V

voltage is low compared to the

DD

breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).

The oscilloscope picture in Figure 8, shows the
information obtained for the MUR8100E (similar die
construction as the MUR1100E Series) in this test circuit
conducting a peak current of one ampere at a breakdown
voltage of 1300 volts, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.

1

Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.

50mV

A20s 953 V VERT500V

CHANNEL 2:
I

0.5 AMPS/DIV.

L

EQUATION (2):

W

AVAL



1

LI

2

2
LPK

ACQUISITIONS

1 217:33 HRS

SAVEREF SOURCE

CH1 CH2 REF REF

Figure 8. Current–Voltage Waveforms

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STACK

CHANNEL 1:
V

DUT

500 VOLTS/DIV.

TIME BASE
20 s/DIV.

:

MUR180E, MUR1100E

NOTE 3. — AMBIENT MOUNTING DATA

Data shown for thermal resistance junction to
ambient (R
used as typical guideline values for preliminary
engineering or in case the tie point temperature
cannot be measured.

) for the mountings shown is to be

JA



TYPICAL VALUES FOR R

Mounting

Method
1
2
3

R



JA

MOUNTING METHOD 1

L L

MOUNTING METHOD 2

L L

Lead Length, L

1/8

52
67

IN STILL AIR



JA

1/4 1/2 Units

65 72
80 87

50

°C/W
°C/W
°C/W

Vector Pin Mounting

MOUNTING METHOD 3

L = 3/8

Board Ground Plane

P.C. Board with

1–1/2 X 1–1/2 Copper Surface″″

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5

″

MUR180E, MUR1100E

PACKAGE DIMENSIONS

MINI MOSORB

CASE 59–10

ISSUE S

B

K

D

F

A

F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 59-04 OBSOLETE, NEW STANDARD 59-09.

4. 59-03 OBSOLETE, NEW STANDARD 59-10.

5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY

6. POLARITY DENOTED BY CATHODE BAND.

7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.

DIM MIN MAX MIN MAX

A 4.10 5.200.161 0.205
B 2.00 2.700.079 0.106
D 0.71 0.860.028 0.034
F --- 1.27--- 0.050
K 25.40 ---1.000 ---

MILLIMETERSINCHES

K

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Notes

MUR180E, MUR1100E

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MUR180E, MUR1100E

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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MUR180E/D

8