* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V
5.0
4.0
3.0
is sufficiently below rated VR.
R
R
RATED V
= 50°C/W
JA
800 900700
R
0.03
0.02
0.01
0.30.90.51.3
0.7
v
INSTANTANEOUS VOLTAGE (VOLTS)
F,
Figure 1. Typical Forward Voltage
5.0
(CAPACITIVELOAD)
4.0
3.0
T
= 175°C
J
2.0
1.0
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
0
P
0
0.51.01.52.02.5
I
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
Figure 4. Power Dissipation
1.11.51.9
I
PK
20
I
AV
1.72.1
SQUARE WAVE
2.0
SQUARE WAVE
1.0
dc
, AVERAGE FORWARD CURRENT (AMPS)
2.3
0
F(AV)
I
050
150100200
, AMBIENT TEMPERATURE (°C)
T
A
250
Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
5.010
dc
20
10
7.0
5.0
C, CAPACITANCE (pF)
3.0
2.0
0
1020
V
, REVERSE VOLTAGE (VOLTS)
R
T
= 25°C
J
304050
Figure 5. T ypical Capacitance
http://onsemi.com
3
MERCURY
SWITCH
S
MUR180E, MUR1100E
+V
DD
I
40 mH COIL
L
BV
V
D
I
D
I
DUT
1
t
0
L
DUT
I
D
V
DD
t
1
t
t
2
Figure 6. Test Circuit
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S
is closed at t0 the current in the inductor IL ramps
1
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
and the diode begins to conduct the full load current
DUT
which now starts to decay linearly through the diode, and
goes to zero at t
.
2
By solving the loop equation at the point in time when S
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
power supply while the diode is in
DD
breakdown (from t1 to t2) minus any losses due to finite
EQUATION (1):
W
AVAL
1
LI
2
2
LPK
BV
BV
DUT
DUT–VDD
CH1
CH2
Figure 7. Current–Voltage Waveforms
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
voltage is low compared to the
DD
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
information obtained for the MUR8100E (similar die
construction as the MUR1100E Series) in this test circuit
conducting a peak current of one ampere at a breakdown
voltage of 1300 volts, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.
1
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
50mV
A20s953 VVERT500V
CHANNEL 2:
I
0.5 AMPS/DIV.
L
EQUATION (2):
W
AVAL
1
LI
2
2
LPK
ACQUISITIONS
1217:33 HRS
SAVEREF SOURCE
CH1CH2REFREF
Figure 8. Current–Voltage Waveforms
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4
STACK
CHANNEL 1:
V
DUT
500 VOLTS/DIV.
TIME BASE
20 s/DIV.
:
MUR180E, MUR1100E
NOTE 3. — AMBIENT MOUNTING DATA
Data shown for thermal resistance junction to
ambient (R
used as typical guideline values for preliminary
engineering or in case the tie point temperature
cannot be measured.
) for the mountings shown is to be
JA
TYPICAL VALUES FORR
Mounting
Method
1
2
3
R
JA
MOUNTING METHOD 1
LL
MOUNTING METHOD 2
LL
Lead Length, L
1/8
52
67
IN STILL AIR
JA
1/41/2Units
6572
8087
50
°C/W
°C/W
°C/W
Vector Pin Mounting
MOUNTING METHOD 3
L = 3/8
Board Ground Plane
P.C. Board with
1–1/2 X 1–1/2 Copper Surface″″
http://onsemi.com
5
″
MUR180E, MUR1100E
PACKAGE DIMENSIONS
MINI MOSORB
CASE 59–10
ISSUE S
B
K
D
F
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 59-04 OBSOLETE, NEW STANDARD 59-09.
4. 59-03 OBSOLETE, NEW STANDARD 59-10.
5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867Toll Free USA/Canada
Email: ONlit@hibbertco.com
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
http://onsemi.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
2–9–1 Kamimeguro, Meguro–ku, Tokyo, Japan 153–0051
Phone: 81–3–5773–3850
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
MUR180E/D
8
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