ON Semiconductor MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3 User Manual

MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3

Digital Transistors (BRT) R1 = 10 kW, R2 = 47 kW

PNP Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

PIN 1

BASE

(INPUT)

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PIN CONNECTIONS

COLLECTOR

R1

R2

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 3

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

Rating

Collector−Base Voltage V

Collector−Emitter Voltage V

Collector Current − Continuous I

Input Forward Voltage V

Input Reverse Voltage V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

= 25°C)

A

Symbol Max Unit

CBO

CEO

C

IN(fwd)

IN(rev)

50 Vdc

100 mAdc

40 Vdc

6 Vdc

MARKING DIAGRAMS

XX MG

G

1

XXX MG

G

1

XX MG

G

1

XX M

1

XX M

1

X M

1

CASE 318D

STYLE 1

SOT−23

CASE 318

STYLE 6

SC−70/SOT−323

CASE 419

STYLE 3

CASE 463

STYLE 1

SOT−723

CASE 631AA

STYLE 1

SOT−1123

CASE 524AA

STYLE 1

SC−59

SC−75

October, 2016 − Rev. 6

XXX = Specific Device Code M = Date Code* G =Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet.

1 Publication Order Number:

DTA114Y/D

MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3

Table 1. ORDERING INFORMATION

Device Part Marking Package Shipping

MUN2114T1G, SMUN2114T1G* 6D SC−59 3,000 / Tape & Reel

MMUN2114LT1G, SMMUN2114LT1G* A6D SOT−23 3,000 / Tape & Reel

MMUN2114LT3G, NSVMMUN2114LT3G* A6D SOT−23 10,000 / Tape & Reel

MUN5114T1G, SMUN5114T1G* 6D SC−70/SOT−323 3,000 / Tape & Reel

SMUN5114T3G 6D SC−70/SOT−323 10,000 / Tape & Reel

DTA114YET1G, SDTA114YET1G* 6D SC−75 3,000 / Tape & Reel

DTA114YM3T5G, NSVDTA114YM3T5G* 6D SOT−723 8,000 / Tape & Reel

NSBA114YF3T5G K SOT−1123 8,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

300

250

†

200

150

100

, POWER DISSIPATION (mW)

50

D

P

0

(1) (2) (3) (4) (5)

AMBIENT TEMPERATURE (°C)

150

1251007550250−25−50

Figure 1. Derating Curve

(1) SC−75 and SC−70/SOT−323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−1123; 100 mm (5) SOT−723; Minimum Pad

2

, 1 oz. copper trace

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MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3

Table 2. THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

THERMAL CHARACTERISTICS (SC−59) (MUN2114)

Total Device Dissipation

= 25°C (Note 1)

T

A

Derate above 25°C (Note 1)

Thermal Resistance, (Note 1) Junction to Ambient (Note 2)

Thermal Resistance, (Note 1) Junction to Lead (Note 2)

Junction and Storage Temperature Range TJ, T

THERMAL CHARACTERISTICS (SOT−23) (MMUN2114L)

Total Device Dissipation

TA = 25°C (Note 1)

Derate above 25°C (Note 1)

Thermal Resistance, (Note 1)

Junction to Ambient (Note 2)

Thermal Resistance, (Note 1)

Junction to Lead (Note 2)

Junction and Storage Temperature Range TJ, T

THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5114)

Total Device Dissipation

= 25°C (Note 1)

T

A

Derate above 25°C (Note 1)

Thermal Resistance, (Note 1) Junction to Ambient (Note 2)

Thermal Resistance, (Note 1)

Junction to Lead (Note 2)

Junction and Storage Temperature Range TJ, T

THERMAL CHARACTERISTICS (SC−75) (DTA114YE)

Total Device Dissipation

= 25°C (Note 1)

T

A

Derate above 25°C (Note 1)

Thermal Resistance, (Note 1) Junction to Ambient (Note 2)

Junction and Storage Temperature Range TJ, T

THERMAL CHARACTERISTICS (SOT−723) (DTA114YM3)

Total Device Dissipation

T

= 25°C (Note 1)

A

Derate above 25°C (Note 1)

Thermal Resistance, (Note 1)

Junction to Ambient (Note 2)

Junction and Storage Temperature Range TJ, T

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 Inch Pad.

3. FR−4 @ 100 mm

4. FR−4 @ 500 mm

2

, 1 oz. copper traces, still air.

2

, 1 oz. copper traces, still air.

(Note 2)

P

D

230

mW

338

1.8

mW/°C

2.7

R

q

JA

R

q

JL

stg

P

D

540 370

264 287

−55 to +150 °C

246

°C/W

mW

400

2.0

mW/°C

3.2

R

q

JA

R

q

JL

stg

P

D

508 311

174 208

−55 to +150 °C

202

°C/W

mW

310

1.6

mW/°C

2.5

R

q

JA

R

q

JL

stg

P

D

618 403

280 332

−55 to +150 °C

200

°C/W

mW

300

1.6

mW/°C

2.4

R

q

JA

stg

P

D

600 400

−55 to +150 °C

260

°C/W

mW

600

2.0

mW/°C

4.8

R

q

JA

stg

480 205

−55 to +150 °C

°C/W

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MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3

Table 2. THERMAL CHARACTERISTICS

Characteristic UnitMaxSymbol

THERMAL CHARACTERISTICS (SOT−1123) (NSBA114YF3)

Total Device Dissipation

= 25°C (Note 3)

T

A

Derate above 25°C (Note 3)

Thermal Resistance, (Note 3)

Junction to Ambient (Note 4)

Thermal Resistance, Junction to Lead (Note 3)

Junction and Storage Temperature Range TJ, T

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 Inch Pad.

3. FR−4 @ 100 mm

4. FR−4 @ 500 mm

2

, 1 oz. copper traces, still air.

2

, 1 oz. copper traces, still air.

(Note 4)

P

D

254

mW

297

2.0

mW/°C

2.4

R

q

JA

R

q

JL

stg

493 421

193 °C/W

−55 to +150 °C

°C/W

Table 3. ELECTRICAL CHARACTERISTICS (T

= 25°C, unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

Collector−Emitter Cutoff Current

(V

= 50 V, IB = 0)

CE

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

Collector−Base Breakdown Voltage

= 10 mA, IE = 0)

(I

C

Collector−Emitter Breakdown Voltage (Note 5)

(I

= 2.0 mA, IB = 0)

C

I

CBO

I

CEO

I

EBO

V

(BR)CBO

V

(BR)CEO

− − 100

− − 500

− − 0.2

50 − −

nAdc

mAdc

Vdc

ON CHARACTERISTICS

DC Current Gain (Note 5)

= 5.0 mA, VCE = 10 V)

(I

C

Collector *Emitter Saturation Voltage (Note 5)

(IC = 10 mA, IB = 0.3 mA)

Input Voltage (off)

= 5.0 V, IC = 100 mA)

(V

CE

Input Voltage (on)

(V

= 0.2 V, IC = 1.0 mA)

CE

Output Voltage (on)

= 5.0 V, VB = 2.5 V, RL = 1.0 kW)

(V

CC

Output Voltage (off)

= 5.0 V, VB = 0.5 V, RL = 1.0 kW)

(V

CC

Input Resistor R1 7.0 10 13

Resistor Ratio R1/R

h

V

CE(sat)

V

FE

i(off)

i(on)

OL

OH

80 140 −

Vdc

− − 0.25

Vdc

− 0.7 0.5

Vdc

1.4 0.9 −

Vdc

− − 0.2

Vdc

4.9 − −

kW

2

0.17 0.21 0.25

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3

TYPICAL CHARACTERISTICS

MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3

1

IC/IB = 10

25°C

0.1

150°C

−55°C

, COLLECTOR−EMITTER VOLTAGE (V)

0.01 01020

CE(sat)

V

I

, COLLECTOR CURRENT (mA)

C

Figure 2. V

CE(sat)

vs. I

4030

C

10

9

8

7

f = 10 kHz

= 0 A

I

E

T

= 25°C

A

6

5

4

3

2

, OUTPUT CAPACITANCE (pF)

1

ob

C

0

010 20304050

VR, REVERSE VOLTAGE (V)

Figure 4. Output Capacitance

1000

VCE = 10 V

100

10

, DC CURRENT GAIN

FE

h

1

50

0.1 1

100

10

1

0.1

0.01

, COLLECTOR CURRENT (mA)

C

I

0.001 01234

Figure 5. Output Current vs. Input Voltage

25°C

150°C

−55°C

I

, COLLECTOR CURRENT (mA)

C

Figure 3. DC Current Gain

25°C

150°C

V

, INPUT VOLTAGE (V)

in

10010

−55°C

VO = 5 V

56 7

100

10

1

, INPUT VOLTAGE (V)

in

V

0.1

25°C

−55°C

150°C

VO = 0.2 V

1002030

I

, COLLECTOR CURRENT (mA)

C

40 50

Figure 6. Input Voltage vs. Output Current

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