ON Semiconductor MTP12P10 User Manual
MTP12P10
T
Preferred Device
Power MOSFET
12 Amps, 100 Volts
P−Channel TO−220
This Power MOSFET is designed for medium voltage, high speed
power switching applications such as switching regulators, converters,
solenoid and relay drivers.
Features
• Silicon Gate for Fast Switching Speeds − Switching Times Specified
at 100°C
• Designer’s Data − I
DSS
, V
DS(on)
, V
and SOA Specified
GS(th)
at Elevated Temperature
• Rugged − SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use With Inductive Loads
• Pb−Free Package is Available*
MAXIMUM RATINGS (T
Rating
Drain−Source Voltage V
Drain−Gate Voltage (RGS = 1.0 MW)
Gate−Source Voltage
− Continuous
− Non−repetitive (t
Drain Current − Continuous
Drain Current − Pulsed
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range TJ, T
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient°
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= 25°C unless otherwise noted)
C
Symbol Value Unit
DSS
V
DGR
V
GS
≤ 50 ms)
p
V
I
R
R
GSM
I
D
DM
P
D
q
JC
q
JA
T
L
stg
100 Vdc
100 Vdc
± 20
± 40
12
28
75
0.6
−6 5 to 150 °C
1.67
62.5
260 °C
Vdc
Vpk
Adc
W
W/°C
°C/W
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12 AMPERES, 100 VOLTS
R
DS(on)
G
4
TO−220AB
CASE 221A
1
2
3
MTP12P10 = Device Code
A = Location Code
Y = Year
WW = Work Week
G = Pb−Free Package
= 300 mW
P−Channel
D
S
MARKING DIAGRAM
AND PIN ASSIGNMEN
MTP12P10G
STYLE 5
1
Gate
Drain
AYWW
Drain
4
3
Source
2
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
1 Publication Order Number:
ORDERING INFORMATION
Device Package Shipping
MTP12P10 TO−220AB 50 Units/Rail
MTP12P10G TO−220AB
(Pb−Free)
Preferred devices are recommended choices for future use
and best overall value.
50 Units/Rail
MTP12P10/D
MTP12P10
)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
J
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) V
Zero Gate Voltage Drain Current
(VDS = Rated V
(VDS = Rated V
Gate−Body Leakage Current, Forward (V
Gate−Body Leakage Current, Reverse (V
, VGS = 0)
DSS
, VGS = 0, TJ = 125°C)
DSS
= 20 Vdc, VDS = 0) I
GSF
= 20 Vdc, VDS = 0) I
GSR
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (V
T
= 100°C
J
= VGS, ID = 1.0 mA)
DS
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 6.0 Adc) R
Drain−Source On−Voltage (VGS = 10 V)
(I
= 12 Adc)
D
(ID = 6.0 Adc, TJ = 100°C)
Forward Transconductance (VDS = 15 V, ID = 6.0 A) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance C
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
See Figure 10
Reverse Transfer Capacitance C
SWITCHING CHARACTERISTICS (Note 1) (TJ = 100°C)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
(VDD = 25 V, ID = 0.5 Rated ID, RG = 50 W)
See Figures 12 and 13
Fall Time t
Total Gate Charge
Gate−Source Charge Q
(VDS = 0.8 Rated V
, ID = Rated ID, VGS = 10 V
DSS
See Figure 11
Gate−Drain Charge Q
SOURCE−DRAIN DIODE CHARACTERISTICS (Note 1)
Forward On−Voltage
Forward Turn−On Time t
(IS = Rated ID, VGS = 0)
Reverse Recovery Time t
INTERNAL PACKAGE INDUCTANCE (TO−204)
Internal Drain Inductance, (Measured from the contact screw on the header closer to the
source pin and the center of the die)
Internal Source Inductance
(Measured from the source pin, 0.25″ from the package
to the source bond pad)
INTERNAL PACKAGE INDUCTANCE (TO−220)
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
(BR)DSS
I
DSS
GSSF
GSSR
V
GS(th)
DS(on)
V
DS(on)
FS
C
iss
oss
rss
t
d(on)
r
d(off)
f
Q
g
gs
gd
V
SD
on
rr
L
d
L
s
L
d
L
s
100 − Vdc
mAdc
−
−
10
100
− 100 nAdc
− 100 nAdc
2.0
1.5
− 0.3
4.5
4.0
Vdc
W
Vdc
−
−
4.2
3.8
2.0 − mhos
− 920 pF
− 575
− 200
− 50 ns
− 150
− 150
− 150
33 (Typ) 50 nC
16 (Typ) −
17 (Typ) −
4.0 (Typ) 5.5 Vdc
Limited by stray inductance
300
− ns
(Typ)
5.0 (Typ) −
12.5
−
nH
(Typ)
nH
3.5 (Typ)
4.5 (Typ)
−
−
7.5 (Typ) −
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2
MTP12P10
TYPICAL ELECTRICAL CHARACTERISTICS
20
18
16
14
12
10
8
6
, DRAIN CURRENT (AMPS)R
D
−I
4
2
0
VGS = −20 V
TJ = 25°C
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10 V
8 V
7 V
6 V
5 V
109876543210
Figure 1. On−Region Characteristics
1.2
VDS = V
GS
1.1
1
0.9
0.8
, GATE THRESHOLD VOLTAGE (NORMALIZED)
GS(th)
−50 −25 0 25 50 75 100 125 150
V
TJ, JUNCTION TEMPERATURE (°C)
ID = 1 mA
Figure 2. Gate−Threshold Voltage Variation
With Temperature
20
16
12
TJ = −55°C
25°C
100°C
1.6
1.2
2
VGS = 0
I
= 0.25 mA
D
8
, DRAIN CURRENT (AMPS)
D
I
4
0
0.5
VGS = 15 V
0.4
0.3
0.2
0.1
, DRAIN−TO−SOURCE RESISTANCE (OHMS)
0
DS(on)
VDS = 20 V
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
TJ = 100°C
25°C
−55°C
ID, DRAIN CURRENT (AMPS)
0.8
(NORMALIZED)
0.4
, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE
201612840
0
−50 −75 0 25 50 75 100 125 150
BR(DSS)
V
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Normalized Breakdown Voltage
versus Temperature
1.8
1.6
1.4
1.2
1
0.8
(NORMALIZED)
0.6
, DRAIN−TO−SOURCE RESISTANCE
0.4
0.2
DS(on)
R
4036322824201612840
0
−50 −25 0 25 50 75 100 125 150
VGS = 10 V
I
= 6 A
D
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance versus Drain Current
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Figure 6. On−Resistance Variation
With Temperature
3
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